公开(公告)号：US08568532B2

公开(公告)日：2013-10-29

申请号：US13315871

申请日：2011-12-09

申请人： Makoto Iwai ,  Shuhei Higashihara ,  Yusuke Mori ,  Yasuo Kitaoka ,  Naoya Miyoshi

发明人： Makoto Iwai ,  Shuhei Higashihara ,  Yusuke Mori ,  Yasuo Kitaoka ,  Naoya Miyoshi

IPC分类号： C30B19/06

CPC分类号： C30B29/403 ,  C30B9/10 ,  C30B35/002

摘要： Materials of a nitride single crystal of a metal belonging to III group and a flux are contained in a crucible, which is contained in a reaction container, the reaction container is contained in an outer container, the outer container is contained in a pressure container, and nitrogen-containing atmosphere is supplied into the outer container and melt is generated in the crucible to grow a nitride single crystal of a metal belonging to III group. The reaction container includes a main body containing the crucible and a lid. The main body includes a side wall having a fitting face and a groove opening at the fitting face and a bottom wall. The lid has an upper plate part including a contact face for the fitting face of the main body and a flange part extending from the upper plate part and surrounding an outer side of said side wall.

摘要翻译： 属于III族的金属的氮化物单晶和助熔剂的材料包含在容纳在反应容器中的坩埚中，反应容器容纳在外容器中，外容器容纳在压力容器中， 向外容器供给含氮气氛，在坩埚中产生熔融物，生长属于III族的金属的氮化物单晶。 反应容器包括容纳坩埚和盖的主体。 主体包括具有配合面的侧壁和在配合面处的槽开口和底壁。 盖具有上板部，其包括用于主体的嵌合面的接触面和从上板部延伸并围绕所述侧壁的外侧的凸缘部。

公开(公告)号：US20120137961A1

公开(公告)日：2012-06-07

申请号：US13315871

申请日：2011-12-09

申请人： Makoto Iwai ,  Shuhei Higashihara ,  Yusuke Mori ,  Yasuo Kitaoka ,  Naoya Miyoshi

发明人： Makoto Iwai ,  Shuhei Higashihara ,  Yusuke Mori ,  Yasuo Kitaoka ,  Naoya Miyoshi

IPC分类号： C30B11/06

CPC分类号： C30B29/403 ,  C30B9/10 ,  C30B35/002

摘要： Materials of a nitride single crystal of a metal belonging to III group and a flux are contained in a crucible, which is contained in a reaction container, the reaction container is contained in an outer container, the outer container is contained in a pressure container, and nitrogen-containing atmosphere is supplied into the outer container and melt is generated in the crucible to grow a nitride single crystal of a metal belonging to III group. The reaction container includes a main body containing the crucible and a lid. The main body includes a side wall having a fitting face and a groove opening at the fitting face and a bottom wall. The lid has an upper plate part including a contact face for the fitting face of the main body and a flange part extending from the upper plate part and surrounding an outer side of said side wall.

摘要翻译： 属于III族的金属的氮化物单晶和助熔剂的材料包含在容纳在反应容器中的坩埚中，反应容器容纳在外容器中，外容器容纳在压力容器中， 向外容器供给含氮气氛，在坩埚中产生熔融物，生长属于III族的金属的氮化物单晶。 反应容器包括容纳坩埚和盖的主体。 主体包括具有配合面的侧壁和在配合面处的槽开口和底壁。 盖具有上板部，其包括用于主体的嵌合面的接触面和从上板部延伸并围绕所述侧壁的外侧的凸缘部。

公开(公告)号：US09404196B2

公开(公告)日：2016-08-02

申请号：US13592555

申请日：2012-08-23

申请人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

发明人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

IPC分类号： C30B9/10 ,  C30B9/12 ,  C30B29/40

CPC分类号： C30B9/12 ,  C30B9/10 ,  C30B29/406

摘要： A method of manufacturing a group 13 nitride crystal includes a crystal growth process to form the group 13 nitride crystal by growing the group 13 nitride crystal having a hexagonal crystal structure from a seed crystal which is a gallium nitride crystal having a hexagonal crystal structure in which a length “L” in a c-axis direction is 9.7 mm or more, and a ratio L/d of the length “L” to a crystal diameter “d” in a c-plane is larger than 0.813. The crystal growth process includes a process of forming an outer periphery containing a {10-10} plane and an outer periphery containing a {10-11} plane at side surfaces of the group 13 nitride crystal, and forming an outer periphery containing a {0001} plane at a bottom surface of the group 13 nitride crystal.

摘要翻译： 制造13族氮化物晶体的方法包括通过从具有六方晶系结构的氮化镓晶体的晶种生长具有六方晶系结构的13族氮化物晶体来形成氮化镓族晶体的晶体生长工艺，其中 c轴方向的长度“L”为9.7mm以上，c面中的长度“L”与晶体直径“d”的比率L / d大于0.813。 晶体生长工艺包括在第13族氮化物晶体的侧面形成包含{10-10}面和包含{10-11}面的外周的外周的工艺，并且形成含有{ 0001}面。

公开(公告)号：US20130065036A1

公开(公告)日：2013-03-14

申请号：US13603703

申请日：2012-09-05

申请人： Masahiro HAYASHI ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

发明人： Masahiro HAYASHI ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

IPC分类号： C01B21/06 ,  C30B19/02 ,  C30B29/40

CPC分类号： C30B29/406 ,  C30B9/12 ,  H01L33/16 ,  H01L33/32

摘要： A gallium nitride crystal having a hexagonal crystal structure, wherein a full width at half maximum (FWHM) of X-ray rocking curve in a region at a side of one edge in a c-axis direction is smaller than the FWHM in a region at a side of the other edge in the c-axis direction, in at least one of m-plane outer peripheral surfaces of the hexagonal crystal structure.

摘要翻译： 具有六方晶系结构的氮化镓晶体，其中在c轴方向上的一个边缘的一侧的区域中的X射线摇摆曲线的半高全宽（FWHM）小于FW轴的区域中的FWHM 在六边形晶体结构的m面外周面的至少一个中，在c轴方向上的另一边的一侧。

公开(公告)号：US20180163323A1

公开(公告)日：2018-06-14

申请号：US15891764

申请日：2018-02-08

申请人： Takashi Satoh ,  Naoya Miyoshi ,  Junichi Wada ,  Masahiro Hayashi ,  Seiji Sarayama ,  Haruo Sunakawa ,  Yujirou Ishihara ,  Akira Usui

发明人： Takashi Satoh ,  Naoya Miyoshi ,  Junichi Wada ,  Masahiro Hayashi ,  Seiji Sarayama ,  Haruo Sunakawa ,  Yujirou Ishihara ,  Akira Usui

IPC分类号： C30B29/40 ,  C30B19/04 ,  C30B19/06 ,  C30B19/10 ,  C30B17/00 ,  C30B35/00

CPC分类号： C30B29/403 ,  C30B9/10 ,  C30B9/12 ,  C30B17/00 ,  C30B19/02 ,  C30B19/04 ,  C30B19/06 ,  C30B19/106 ,  C30B29/406 ,  C30B35/007

摘要： A method for producing a group 13 nitride single crystal includes dissolving and crystal growing. The dissolving includes dissolving nitrogen in a mixed melt in a reaction vessel that contains the mixed melt, a seed crystal, and a surrounding member. The mixed melt contains an alkali metal and a group 13 metal. The seed crystal is a seed crystal that is placed in the mixed melt and includes a group 13 nitride crystal in which a principal face is a c-plane. The surrounding member is arranged so as to surround the entire area of a side face of the seed crystal. The crystal growing includes growing a group 13 nitride crystal on the seed crystal.

公开(公告)号：US09863058B2

公开(公告)日：2018-01-09

申请号：US14708583

申请日：2015-05-11

申请人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

发明人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

IPC分类号： C30B29/38 ,  C30B9/12 ,  C30B29/40

CPC分类号： C30B9/12 ,  C30B29/406 ,  Y10T428/239 ,  Y10T428/26

摘要： A gallium nitride crystal having a hexagonal crystal structure includes a first region located on an inner side of a cross section intersecting c-axis of the hexagonal crystal structure, and a second region surrounding at least a part of the outer periphery of the first region in the cross section. An emission spectrum of each of the first region and the second region with electron beam or ultraviolet light excitation has a first peak including a band edge emission of gallium nitride and a second peak located in a longer wavelength area than the first peak. A peak intensity of the first peak is smaller than a peak intensity of the second peak in the first region, and a peak intensity of the first peak is greater than a peak intensity of the second peak in the second region.

公开(公告)号：US20150247257A1

公开(公告)日：2015-09-03

申请号：US14708583

申请日：2015-05-11

申请人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

发明人： Masahiro Hayashi ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

IPC分类号： C30B9/12 ,  C30B29/40

CPC分类号： C30B9/12 ,  C30B29/406 ,  Y10T428/239 ,  Y10T428/26

摘要： A gallium nitride crystal having a hexagonal crystal structure includes a first region located on an inner side of a cross section intersecting c-axis of the hexagonal crystal structure, and a second region surrounding at least a part of the outer periphery of the first region in the cross section. An emission spectrum of each of the first region and the second region with electron beam or ultraviolet light excitation has a first peak including a band edge emission of gallium nitride and a second peak located in a longer wavelength area than the first peak. A peak intensity of the first peak is smaller than a peak intensity of the second peak in the first region, and a peak intensity of the first peak is greater than a peak intensity of the second peak in the second region.

摘要翻译： 具有六方晶系结构的氮化镓晶体包括位于与六方晶体结构的c轴交叉的截面的内侧的第一区域，以及包围第一区域的外周的至少一部分的第二区域 横截面。 具有电子束或紫外光激发的第一区域和第二区域中的每一个的发射光谱具有包括氮化镓的带边发射和位于比第一峰的更长波长区域的第二峰的第一峰。 第一峰的峰值强度小于第一区域中的第二峰值的峰值强度，并且第一峰值的峰值强度大于第二区域中的第二峰值的峰值强度。

公开(公告)号：US20140077218A1

公开(公告)日：2014-03-20

申请号：US14023702

申请日：2013-09-11

申请人： Masahiro Hayashi ,  Takashi Satoh ,  Chiharu Kimura ,  Naoya Miyoshi ,  Akishige Murakami ,  Shinsuke Miyake ,  Junichi Wada ,  Seiji Sarayama

发明人： Masahiro Hayashi ,  Takashi Satoh ,  Chiharu Kimura ,  Naoya Miyoshi ,  Akishige Murakami ,  Shinsuke Miyake ,  Junichi Wada ,  Seiji Sarayama

IPC分类号： H01L29/20

CPC分类号： H01L29/2003 ,  C30B9/12 ,  C30B29/403

摘要： A group 13 nitride crystal having a hexagonal crystal structure contains at least a nitrogen atom and at least one metal atom selected from a group consisting of B, Al, Ga, In and Tl. Dislocation density of basal plane dislocations in a cross section parallel to a c-axis is 104 cm−2 or more.

摘要翻译： 具有六方晶系结构的13族氮化物晶体至少含有氮原子和至少一种选自B，Al，Ga，In和Tl的金属原子。 平行于c轴的截面中的基面位错的位错密度为104cm -2以上。

公开(公告)号：US20130062660A1

公开(公告)日：2013-03-14

申请号：US13603678

申请日：2012-09-05

申请人： Masahiro HAYASHI ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

发明人： Masahiro HAYASHI ,  Seiji Sarayama ,  Takashi Satoh ,  Hiroshi Nambu ,  Chiharu Kimura ,  Naoya Miyoshi

IPC分类号： H01L33/32

CPC分类号： H01L33/32 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/0025 ,  H01L33/18 ,  H01L33/24

摘要： A group 13 nitride crystal has a hexagonal crystal structure and at least contains nitrogen atom and at least a kind of metal atoms selected from a group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal includes a first region located at an inner side of a cross section intersecting a c-axis, and a second region surrounding at least a part of an outer periphery of the first region, having a thickness larger than a maximum diameter of the first region, and having a carrier density higher than that of the first region.

摘要翻译： 13族氮化物晶体具有六方晶系结构，并且至少含有氮原子和至少一种选自B，Al，Ga，In和Tl的金属原子。 13族氮化物晶体包括位于与c轴交叉的横截面的内侧的第一区域和围绕第一区域的外周的至少一部分的第二区域，该第二区域的厚度大于最大直径 并且具有比第一区域的载流子密度高的载流子密度。

公开(公告)号：US10100426B2

公开(公告)日：2018-10-16

申请号：US15124794

申请日：2014-11-27

申请人： Takashi Satoh ,  Seiji Sarayama ,  Masahiro Hayashi ,  Naoya Miyoshi ,  Chiharu Kimura ,  Junichi Wada

发明人： Takashi Satoh ,  Seiji Sarayama ,  Masahiro Hayashi ,  Naoya Miyoshi ,  Chiharu Kimura ,  Junichi Wada

IPC分类号： C30B9/10 ,  C30B29/40 ,  C30B9/12 ,  C30B35/00

摘要： A method for producing a gallium nitride crystal includes growing a gallium nitride crystal 5 by dissolving nitrogen in a mixed melt including gallium and sodium, and collecting the gallium 55 separated from an alloy 51 including the gallium and the sodium by reacting the alloy 51 and a liquid 52 that ionizes the sodium and separating sodium ions and the gallium 55 from the alloy.