摘要:
A semiconductor photodiode device includes a semiconductor substrate, a first buffer layer containing a material different from that of the semiconductor substrate in a portion thereof, a first semiconductor layer formed above the buffer layer and having a lattice constant different from that of the semiconductor substrate, a second buffer layer formed above the first semiconductor layer and containing an element identical with that of the first semiconductor layer in a portion thereof, and a second semiconductor layer formed above the buffer layer in which a portion of the first semiconductor layer is formed of a plurality of island shape portions each surrounded with an insulating film, and the second buffer layer allows adjacent islands of the first semiconductor layer to coalesce with each other and is in contact with the insulating film.
摘要:
A bipolar type semiconductor device capable of attaining high current gain and high cut-off frequency and performing a satisfactory transistor operation also in a high current region while maintaining a high breakdown voltage performance, as well as a method of manufacturing the semiconductor device, are provided. In a collector comprising a first semiconductor layer and a second semiconductor layer narrower in band gap than the first semiconductor layer, an impurity is doped so as to have a peak of impurity concentration within the second collector layer and so that the value of the peak is higher than the impurity concentration at any position within the first collector layer. It is preferable to adjust the concentration of the doped impurity in such a manner that a collector-base depletion layer extends up to the first collector layer.
摘要:
A high quality silicon carbide (SiC) layer being substantially lower in threading dislocation density than a prior layer is formed on silicon (Si) substrate. A semiconductor device is fabricated in such a way that a semiconductor buffer layer containing Si in part and being higher in defect density than a Si substrate is formed on the Si substrate on the upper portion of which are formed a plurality of pairs of facets being mirror-symmetrical to the surface orientation of a semiconductor substrate, further on the top of the layer a SiC layer is sequentially formed.
摘要:
To provide a driver circuit that enables reduction in the number of elements formed through a high-voltage process and in chip size. An embodiment of the present invention relates to a driver circuit for inversion-driving a liquid crystal display panel, including: a positive-polarity line transmitting a positive display signal relative to a common electrode signal; a negative-polarity line transmitting a negative display signal relative to the common electrode signal; a dot inversion switch circuit switching the positive-polarity line and the negative-polarity line from each other to be connected with a source line; a charge recovery circuit connected with the positive-polarity line through a positive charge recovery switch and connected with the negative-polarity line through a negative charge recovery switch; and a common short circuit connecting the positive-polarity line and the negative-polarity line with a common electrode.
摘要:
Disclosed is a display controlling apparatus including latch circuits for holding color data of a current line and a previous line, a latch circuit for holding a polarity signal of the previous line, and a recovery control circuit. The recovery control circuit controls a recovery switch from color data of the previous and current lines, a polarity signal and a recovery clock. For both driving method employing frame-based common inverting and the driving method employing line-based common inverting, the display/controlling apparatus recovers electric charge efficiently to provide for low power dissipation.
摘要:
An (SiGe)C layer having a stoichiometric ratio of about 1:1 is locally formed on an Si layer, a large forbidden band width semiconductor device is prepared inside the layered structure thereof and an Si semiconductor integrated circuit is formed in the regions not formed with the layered structure, whereby high frequency high power operation of the device is enabled by the large forbidden band width semiconductor device and high performance is attained by hybridization of the Si integrated circuit.
摘要:
A bipolar type semiconductor device capable of attaining high current gain and high cut-off frequency and performing a satisfactory transistor operation also in a high current region while maintaining a high breakdown voltage performance, as well as a method of manufacturing the semiconductor device, are provided. In a collector comprising a first semiconductor layer and a second semiconductor layer narrower in band gap than the first semiconductor layer, an impurity is doped so as to have a peak of impurity concentration within the second collector layer and so that the value of the peak is higher than the impurity concentration at any position within the first collector layer. It is preferable to adjust the concentration of the doped impurity in such a manner that a collector-base depletion layer extends up to the first collector layer.
摘要:
In a driver, a voltage-follower-type operational amplifier receives current input data to generate an output signal. A transient state detecting circuit detects a transient state in the current input data to generate a first pulse signal when the current input data is increased and generate a second pulse signal when the current input data is decreased. A switch circuit substantially increases corresponding load currents flowing through the voltage-follower-type operational amplifier in accordance with the first and second pulse signals.
摘要:
A micromanipulator system is comprised of a microscope, a micromanipulator for three-dimensionally manipulating a fine instrument in the field of the microscope, image pick-up device for picking up an image within the microscopic field, reference position setting device for setting a reference position of the micromanipulator along a height direction, detecting device for detecting a height position of a tip portion of the manipulator as positional information measured from the reference position along the height direction, and a display device for combining the image of the image pick-up device with the positional information detected by the detecting device to display the combined image thereon. The joy stick includes a manipulating lever, X- and Y- axial direction detectors, a control signal generation device, and a push button switch. The manipulating lever is swingable in an arbitrary direction with the center of a base. The X- and Y-axial direction detectors detect the inclined angle and the neutral position of the manipulating lever. The control signal generation device outputs a position control signal or a speed control signal on the basis of the detection result of the detectors. While the push button switch is not being depressed, the mode is a position control mode for outputting the position control signal. Also, when the push button switch is depressed, the mode is changed to the speed control mode for outputting the speed control signal. The system enables a micromanipulator to be controlled at an arbitrary angle, thus improving operability.
摘要:
A micromanipulator system has a stepper motor driven at a microstep, and having a stepping angle which is subdivided in units of a predetermined reference subdivision. A micromanipulator moves an instrument by the stepper motor, and an input device inputs either a moving speed of the fine instrument or a moving position thereof. A present position calculating device calculates a present position of the stepper motor in a virtual subdivision unit which is obtained by subdividing the reference subdivision unit to a preselected subdivision number. A speed calculating device calculates a drive speed of the stepper motor based either on the moving speed or the moving position, which are entered from the input device. An output pulse setting device determines a target output pulse, and an energizing signal outputting device energizes the stepper motor in response to the target output pulse. The stepper motor is independently provided on the micromanipulator so as to move the fine instrument in a plurality of axial directions. A moving ratio calculating device calculates a ratio of moving amounts along the axial directions based upon a moving angle of the fine instrument. The input device calculates either the moving speed or the moving position along the respective axial directions based upon the ratio of moving amounts.