公开(公告)号：US20120126293A1

公开(公告)日：2012-05-24

申请号：US13353759

申请日：2012-01-19

申请人： Shigeaki Sumiya ,  Makoto Miyoshi ,  Tomohiko Sugiyama ,  Mikiya Ichimura ,  Yoshitaka Kuraoka ,  Mitsuhiro Tanaka

发明人： Shigeaki Sumiya ,  Makoto Miyoshi ,  Tomohiko Sugiyama ,  Mikiya Ichimura ,  Yoshitaka Kuraoka ,  Mitsuhiro Tanaka

IPC分类号： H01L29/205 ,  H01L21/20

CPC分类号： H01L21/0254 ,  C30B25/18 ,  C30B25/183 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/872

摘要： An epitaxial substrate, in which a group of group-III nitride layers is formed on a single-crystal silicon substrate so that a crystal plane is approximately parallel to a substrate surface, comprises: a first group-III nitride layer formed of AlN on the base substrate; a second group-III nitride layer formed of InxxAlyyGazzN (xx+yy+zz=1, 0≦xx≦1, 0

摘要翻译： 在单晶硅衬底上形成一组III族氮化物层，使得晶面大致平行于衬底表面的外延衬底包括：由第一III族氮化物层形成的第一III族氮化物层 基底; 在第一III族氮化物层上由InxxAlyyGazzN（xx + yy + zz = 1,0,0

公开(公告)号：US20110049570A1

公开(公告)日：2011-03-03

申请号：US12853716

申请日：2010-08-10

申请人： Makoto Miyoshi ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

IPC分类号： H01L29/772 ,  H01L29/201 ,  H01L29/20 ,  H01L21/20

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/201

摘要： Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent ohmic contact characteristics as well as satisfactory device characteristics. On a base substrate, a channel layer formed of a first group III nitride that contains at least Al and Ga and has a composition of Inx1Aly1Gaz1N (x1+y1+z1=1) is formed. On the channel layer, a barrier layer formed of a second group III nitride that contains at least In and Al and has a composition of Inx2Aly2Gaz2N (x2+y2+z2=1) is formed such that an In composition ratio of a near-surface portion is larger than an In composition ratio of a portion other than the near-surface portion.

摘要翻译： 提供了能够实现具有优异的欧姆接触特性以及令人满意的器件特性的半导体器件的外延衬底。 在基底基板上，形成由至少含有Al和Ga的第一III族氮化物形成的沟道层，并且具有Inx1Aly1Gaz1N（x1 + y1 + z1 = 1）的组成。 在沟道层上，形成由至少包含In和Al并且具有In x2 Al y2 Ga z2 N（x2 + y2 + z2 = 1）的组成的第二III族氮化物形成的阻挡层，使得近表面的In组成比 部分大于除了近表面部分之外的部分的In组成比。

公开(公告)号：US08890208B2

公开(公告)日：2014-11-18

申请号：US12884560

申请日：2010-09-17

申请人： Makoto Miyoshi ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mitsuhiro Tanaka

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/778 ,  H01L29/20 ,  C23C16/30 ,  H01L29/201

CPC分类号： H01L29/2003 ,  C23C16/303 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/201 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7786

摘要： Provided is an epitaxial substrate capable of manufacturing a HEMT device that has excellent two-dimensional electron gas characteristics and is capable of performing normally-off operation. A channel layer is formed of a first group III nitride represented by Inx1Aly1Gaz1N (x1+y1+z1=1) so as to have a composition in a range determined by x1=0 and 0≦y1≦0.3. A barrier layer is formed of a second group III nitride represented by Inx2Aly2Gaz2N (x2+y2+z2=1) so as to have a composition, in a ternary phase diagram with InN, AlN and GaN being vertices, in a range surrounded by four straight lines determined in accordance with the composition (AlN molar fraction) of the first group III nitride and to have a thickness of 5 nm or less.

摘要翻译： 提供了能够制造具有优异的二维电子气特性并且能够执行常关操作的HEMT器件的外延衬底。 沟道层由Inx1Aly1Gaz1N（x1 + y1 + z1 = 1）表示的第一III族氮化物形成，以使得其组成在由x1 = 0和0＆lt; 1lE; y1＆nlE; 0.3确定的范围内。 阻挡层由Inx2Aly2Gaz2N（x2 + y2 + z2 = 1）表示的第二III族氮化物形成，以具有以InN，AlN和GaN为顶点的三元相图中的组成，在四个围绕的范围内 根据第一III族氮化物的组成（AlN摩尔分数）确定并且具有5nm或更小的厚度的直线。

公开(公告)号：US08410552B2

公开(公告)日：2013-04-02

申请号：US12855744

申请日：2010-08-13

申请人： Makoto Miyoshi ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

IPC分类号： H01L29/066

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/66462

摘要： Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent schottky contact characteristics as well as satisfactory device characteristics. On a base substrate, a channel layer formed of a first group III nitride that contains at least Al and Ga and has a composition of Inx1Aly1Gaz1N (x1+y1+z1=1) is formed. On the channel layer, a barrier layer formed of a second group III nitride that contains at least In and Al and has a composition of Inx2Aly2Gaz2N (x2+y2+z2=1) is formed such that an In composition ratio of a near-surface portion is smaller than an In composition ratio of a portion other than the near-surface portion.

摘要翻译： 提供了能够实现具有优异的肖特基接触特性以及令人满意的器件特性的半导体器件的外延衬底。 在基底基板上，形成由至少含有Al和Ga的第一III族氮化物形成的沟道层，并且具有Inx1Aly1Gaz1N（x1 + y1 + z1 = 1）的组成。 在沟道层上，形成由至少包含In和Al并且具有In x2 Al y2 Ga z2 N（x2 + y2 + z2 = 1）的组成的第二III族氮化物形成的阻挡层，使得近表面的In组成比 部分比除了近表面部分之外的部分的In组成比小。

公开(公告)号：US08378386B2

公开(公告)日：2013-02-19

申请号：US12853716

申请日：2010-08-10

申请人： Makoto Miyoshi ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

IPC分类号： H01L29/778

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/201

摘要： Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent ohmic contact characteristics as well as satisfactory device characteristics. On a base substrate, a channel layer formed of a first group III nitride that contains at least Al and Ga and has a composition of Inx1Aly1Gaz1N (x1+y1+z1=1) is formed. On the channel layer, a barrier layer formed of a second group III nitride that contains at least In and Al and has a composition of Inx2Aly2Gaz2N (x2+y2+z2=1) is formed such that an In composition ratio of a near-surface portion is larger than an In composition ratio of a portion other than the near-surface portion.

摘要翻译： 提供了能够实现具有优异的欧姆接触特性以及令人满意的器件特性的半导体器件的外延衬底。 在基底基板上，形成由至少含有Al和Ga的第一III族氮化物形成的沟道层，并且具有Inx1Aly1Gaz1N（x1 + y1 + z1 = 1）的组成。 在沟道层上，形成由至少包含In和Al并且具有In x2 Al y2 Ga z2 N（x2 + y2 + z2 = 1）的组成的第二III族氮化物形成的阻挡层，使得近表面的In组成比 部分大于除了近表面部分之外的部分的In组成比。

公开(公告)号：US20110024796A1

公开(公告)日：2011-02-03

申请号：US12884516

申请日：2010-09-17

申请人： Makoto Miyoshi ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mitsuhiro Tanaka

IPC分类号： H01L29/778 ,  H01L21/20

CPC分类号： H01L21/0262 ,  C30B19/00 ,  C30B23/02 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/7786

摘要： Provided is an epitaxial substrate having excellent two-dimensional electron gas characteristics and reduced internal stress due to strains. A channel layer is formed of a first group III nitride represented by Inx1Aly1Gaz1N (x1+y1+z1=1) so as to have a composition in a range determined by x1=0 and 0≦y1≦0.3. A barrier layer is formed of a second group III nitride represented by Inx2Aly2Gaz2N (x2+y2+z2=1) so as to have a composition, in a ternary phase diagram with InN, AlN and GaN being vertices, in a range surrounded by five straight lines determined in accordance with the composition (AlN molar fraction) of the first group III nitride.

摘要翻译： 提供了具有优异的二维电子气特性和由于应变引起的内部应力降低的外延基板。 沟道层由Inx1Aly1Gaz1N（x1 + y1 + z1 = 1）表示的第一III族氮化物形成，以使得其组成在由x1 = 0和0＆lt; 1lE; y1＆nlE; 0.3确定的范围内。 阻挡层由Inx2Aly2Gaz2N（x2 + y2 + z2 = 1）表示的第二III族氮化物形成，以具有以InN，AlN和GaN为顶点的三元相图中的组成，包围在五个 根据第一III族氮化物的组成（AlN摩尔分数）确定的直线。

公开(公告)号：US08872226B2

公开(公告)日：2014-10-28

申请号：US12884516

申请日：2010-09-17

申请人： Makoto Miyoshi ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mitsuhiro Tanaka

IPC分类号： H01L29/66

CPC分类号： H01L21/0262 ,  C30B19/00 ,  C30B23/02 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/7786

摘要： Provided is an epitaxial substrate having excellent two-dimensional electron gas characteristics and reduced internal stress due to strains. A channel layer is formed of a first group III nitride represented by Inx1Aly1Gaz1N (x1+y1+z1=1) so as to have a composition in a range determined by x1=0 and 0≦y1≦0.3. A barrier layer is formed of a second group III nitride represented by Inx2Aly2Gaz2N (x2+y2+z2=1) so as to have a composition, in a ternary phase diagram with InN, AlN and GaN being vertices, in a range surrounded by five straight lines determined in accordance with the composition (AlN molar fraction) of the first group III nitride.

摘要翻译： 提供了具有优异的二维电子气特性和由于应变引起的内部应力降低的外延基板。 沟道层由Inx1Aly1Gaz1N（x1 + y1 + z1 = 1）表示的第一III族氮化物形成，以使得其组成在由x1 = 0和0＆lt; 1lE; y1＆nlE; 0.3确定的范围内。 阻挡层由Inx2Aly2Gaz2N（x2 + y2 + z2 = 1）表示的第二III族氮化物形成，以具有以InN，AlN和GaN为顶点的三元相图中的组成，包围在五个 根据第一III族氮化物的组成（AlN摩尔分数）确定的直线。

公开(公告)号：US20110049571A1

公开(公告)日：2011-03-03

申请号：US12855744

申请日：2010-08-13

申请人： Makoto MIYOSHI ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

发明人： Makoto MIYOSHI ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

IPC分类号： H01L29/78 ,  H01L29/205 ,  H01L21/20

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/66462

摘要： Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent schottky contact characteristics as well as satisfactory device characteristics. On a base substrate, a channel layer formed of a first group III nitride that contains at least Al and Ga and has a composition of Inx1Aly1Gaz1N (x1+y1+z1=1) is formed. On the channel layer, a barrier layer formed of a second group III nitride that contains at least In and Al and has a composition of Inx2Aly2Gaz2N (x2+y2+z2=1) is formed such that an In composition ratio of a near-surface portion is smaller than an In composition ratio of a portion other than the near-surface portion.

摘要翻译： 提供了能够实现具有优异的肖特基接触特性以及令人满意的器件特性的半导体器件的外延衬底。 在基底基板上，形成由至少含有Al和Ga的第一III族氮化物形成的沟道层，并且具有Inx1Aly1Gaz1N（x1 + y1 + z1 = 1）的组成。 在沟道层上，形成由至少包含In和Al并且具有In x2 Al y2 Ga z2 N（x2 + y2 + z2 = 1）的组成的第二III族氮化物形成的阻挡层，使得近表面的In组成比 部分比除了近表面部分之外的部分的In组成比小。

公开(公告)号：US08853828B2

公开(公告)日：2014-10-07

申请号：US13353759

申请日：2012-01-19

申请人： Shigeaki Sumiya ,  Makoto Miyoshi ,  Tomohiko Sugiyama ,  Mikiya Ichimura ,  Yoshitaka Kuraoka ,  Mitsuhiro Tanaka

发明人： Shigeaki Sumiya ,  Makoto Miyoshi ,  Tomohiko Sugiyama ,  Mikiya Ichimura ,  Yoshitaka Kuraoka ,  Mitsuhiro Tanaka

IPC分类号： H01L29/20 ,  H01L21/02 ,  C30B29/40 ,  C30B25/18 ,  H01L29/872 ,  H01L29/778

CPC分类号： H01L21/0254 ,  C30B25/18 ,  C30B25/183 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/872

摘要： An epitaxial substrate, in which a group of group-III nitride layers is formed on a single-crystal silicon substrate so that a crystal plane is approximately parallel to a substrate surface, comprises: a first group-III nitride layer formed of AlN on the base substrate; a second group-III nitride layer formed of InxxAlyyGazzN (xx+yy+zz=1, 0≦xx≦1, 0

摘要翻译： 在单晶硅衬底上形成一组III族氮化物层，使得晶面大致平行于衬底表面的外延衬底包括：由第一III族氮化物层形成的第一III族氮化物层 基底; 在第一III族氮化物层上由InxxAlyyGazzN（xx + yy + zz = 1,0,0

公开(公告)号：US08598626B2

公开(公告)日：2013-12-03

申请号：US12853685

申请日：2010-08-10

申请人： Makoto Miyoshi ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

IPC分类号： H01L29/778

CPC分类号： H01L29/7787 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/66462

摘要： Provided is an epitaxial substrate for semiconductor device that is capable of achieving a semiconductor device having high reliability in reverse characteristics of schottky junction. An epitaxial substrate for semiconductor device obtained by forming, on a base substrate, a group of group III nitride layers by lamination such that a (0001) crystal plane of each layer is approximately parallel to a substrate surface includes: a channel layer formed of a first group III nitride having a composition of Inx1Aly1Gaz1N (x1+y1+z1=1, z1>0); and a barrier layer formed of a second group III nitride having a composition of Inx2Aly2N (x2+y2=1, x2>0, y2>0), wherein the second group III nitride is a short-range-ordered mixed crystal having a short-range order parameter α satisfying a range where 0≦α≦1.

摘要翻译： 本发明提供一种能够实现肖特基结的反向特性的高可靠性的半导体装置的半导体装置用外延基板。 一种用于半导体器件的外延衬底，其通过在基底衬底上通过层叠形成III族氮化物层，使得每个层的（0001）晶面大致平行于衬底表面而形成，其包括：沟道层，其由 具有Inx1Aly1Gaz1N（x1 + y1 + z1 = 1，z1> 0）的组成的第一III族氮化物; 和由具有Inx2Aly2N（x2 + y2 = 1，x2> 0，y2> 0）的组成的第二III族氮化物形成的阻挡层，其中第二III族氮化物是短距离有序混合晶体 满足0 @α@ 1范围的 - 序列参数α。