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    Method for manufacturing semiconductor device and reticle for wiring
    2.
    发明授权
    Method for manufacturing semiconductor device and reticle for wiring 失效
    制造半导体器件和布线用掩模版的方法

    公开(公告)号：US5888900A

    公开(公告)日：1999-03-30

    申请号：US901697

    申请日：1997-07-28

    申请人： Makoto Mizuno ,  Toshihiro Shimizu ,  Masaaki Fujishima ,  Koji Hanihara ,  Itaru Tsuchiya ,  Yasuo Yagi

    发明人： Makoto Mizuno ,  Toshihiro Shimizu ,  Masaaki Fujishima ,  Koji Hanihara ,  Itaru Tsuchiya ,  Yasuo Yagi

    IPC分类号： H01L21/3105 ,  H01L21/768 ,  H01L21/4763

    CPC分类号： H01L21/31053 ,  H01L21/76819 ,  Y10S438/926

    摘要： A method for manufacturing semiconductor device is provided, this method comprises the steps of: depositing a metal film for forming wirings on a substrate; forming a wiring layer, wherein dummy wiring is inserted between wiring space where the dummy wiring can be inserted, and wiring space, where the dummy wiring cannot be inserted, is reduced by widening wiring pattern facing the wiring space; forming an interlayer insulating film on said wiring layer; and flattening surface of the interlayer insulating film. The film can be flattened by a CMP method or by an etchback of entire surface of the film. It is possible to flatten the surface of the semiconductor device cost-effectively and precisely.

    摘要翻译： 提供一种制造半导体器件的方法，该方法包括以下步骤：在衬底上沉积用于形成布线的金属膜; 形成布线层，其中虚拟布线插入在可插入虚拟布线的布线空间之间，并且通过加宽面向布线空间的布线图案来减少虚拟布线不能插入的布线空间; 在所述布线层上形成层间绝缘膜; 和层间绝缘膜的平坦化表面。 该膜可以通过CMP方法或通过膜的整个表面的回蚀而变平。 可以经济高效地精确地使半导体器件的表面平坦化。

    Multiple metallization structure for a reflection type liquid crystal display
    3.
    发明授权
    Multiple metallization structure for a reflection type liquid crystal display 失效
    用于反射型液晶显示器的多金属化结构

    公开(公告)号：US6049132A

    公开(公告)日：2000-04-11

    申请号：US893671

    申请日：1997-07-11

    申请人： Masanori Iwahashi ,  Makoto Mizuno ,  Koji Hanihara

    发明人： Masanori Iwahashi ,  Makoto Mizuno ,  Koji Hanihara

    IPC分类号： G02F1/1362 ,  H01L23/532 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： G02F1/136277 ,  G02F1/136227 ,  H01L23/53223 ,  H01L23/53242 ,  H01L23/53247 ,  H01L23/53257 ,  H01L2924/0002

    摘要： In a semiconductor chip for Si chip based liquid crystal having insulating films and interconnection layers formed on a semiconductor substrate, a thin interconnection layer made of TiN/Ti having strong erosion resistance is formed on an uppermost interlayer insulating film having a flat surface to substantially expose the thin uppermost interconnection layer to the surface of the chip, the uppermost insulating film is covered with a protection film made of p-SiN and a thin insulating film having a mirror-like flat surface is formed on the uppermost interconnection layer.

    摘要翻译： 在具有形成在半导体衬底上的绝缘膜和互连层的用于Si芯片的液晶的半导体芯片中，在具有平坦表面的最上层的层间绝缘膜上形成具有很强的耐腐蚀性的由TiN / Ti制成的薄互连层，以基本上露出 在芯片表面的最薄的最上层的互连层，最上层的绝缘膜被由p-SiN制成的保护膜覆盖，并且在最上层的互连层上形成了具有镜面平坦表面的薄绝缘膜。

    Electrostatic actuator, variable capacitance capacitor, electric switch, and method for driving electrostatic actuator
    6.
    发明授权
    Electrostatic actuator, variable capacitance capacitor, electric switch, and method for driving electrostatic actuator 有权

    公开(公告)号：US09912255B2

    公开(公告)日：2018-03-06

    申请号：US14391433

    申请日：2012-04-09

    申请人： Koji Hanihara

    发明人： Koji Hanihara

    IPC分类号： H01G5/16 ,  H02N1/00 ,  B81B3/00 ,  H01H59/00

    CPC分类号： H02N1/006 ,  B81B3/001 ,  B81B2201/0221 ,  H01G5/16 ,  H01H59/00 ,  H01H2059/0072

    摘要： An electrostatic actuator includes: a fixed driving electrode that is disposed on a silicon substrate; a movable driving electrode that is disposed so as to face the fixed driving electrode and approaches the fixed driving electrode with an electrostatic force generated between the movable driving electrode and the fixed driving electrode; and a pair of spacers that comes in contact with the movable driving electrode in an approaching state in which the fixed driving electrode and the movable driving electrode approach each other and forms a prescribed air gap between the fixed driving electrode and the movable driving electrode, wherein each of the spacers has a spacer electrode portion that comes in contact with the movable driving electrode via an insulator and has the same potential as one of the electrodes at least in the approaching state.

    METHOD FOR MANUFACTURING OPTICAL FILTER
    7.
    发明申请
    METHOD FOR MANUFACTURING OPTICAL FILTER 审中-公开
    制造光学滤波器的方法

    公开(公告)号：US20150240348A1

    公开(公告)日：2015-08-27

    申请号：US14423830

    申请日：2012-08-30

    申请人： Koji Hanihara

    发明人： Koji Hanihara

    IPC分类号： C23C14/34 ,  G02B5/28

    CPC分类号： C23C14/34 ,  C23C14/044 ,  C23C14/35 ,  G02B5/28 ,  G02B5/285

    摘要： The problem addressed by the present invention is easily and by means of a simple configuration to form a filter layer having a different film thickness at each position. The present invention is a method for producing a variable-transmission-wavelength interference filter (16) configuring a plurality of filter units (28), and is characterized by: using a mask member (75) that is interposed between a sputtering target (73) and a light reception element array (15) and that has an aperture ratio that differs at the positions corresponding to each filter unit (28); and causing the vapor phase growth of a dielectric multi-layer film (16a) on the light reception element array (15) with the mask member (75) therebetween.

    摘要翻译： 本发明解决的问题很容易，并且通过简单的结构形成在每个位置具有不同膜厚度的过滤层。 本发明是一种用于制造构成多个滤波器单元（28）的可变透射波长干涉滤光器（16）的方法，其特征在于：使用掩模构件（75），其被插入在溅射靶（73） ）和光接收元件阵列（15），并且具有在对应于每个滤光器单元（28）的位置处不同的孔径比; 并且在其间具有掩模构件（75）使得光接收元件阵列（15）上的电介质多层膜（16a）的气相生长。

    ELECTROSTATIC ACTUATOR, VARIABLE CAPACITANCE CAPACITOR, ELECTRIC SWITCH, AND METHOD FOR DRIVING ELECTROSTATIC ACTUATOR
    8.
    发明申请
    ELECTROSTATIC ACTUATOR, VARIABLE CAPACITANCE CAPACITOR, ELECTRIC SWITCH, AND METHOD FOR DRIVING ELECTROSTATIC ACTUATOR 有权
    静电致动器，可变电容电容器，电动开关及驱动静电致动器的方法

    公开(公告)号：US20150116893A1

    公开(公告)日：2015-04-30

    申请号：US14391433

    申请日：2012-04-09

    申请人： Koji Hanihara

    发明人： Koji Hanihara

    IPC分类号： H02N1/00 ,  H01H59/00 ,  H01G5/16

    CPC分类号： H02N1/006 ,  B81B3/001 ,  B81B2201/0221 ,  H01G5/16 ,  H01H59/00 ,  H01H2059/0072

    摘要： An electrostatic actuator includes: a fixed driving electrode that is disposed on a silicon substrate; a movable driving electrode that is disposed so as to face the fixed driving electrode and approaches the fixed driving electrode with an electrostatic force generated between the movable driving electrode and the fixed driving electrode; and a pair of spacers that comes in contact with the movable driving electrode in an approaching state in which the fixed driving electrode and the movable driving electrode approach each other and forms a prescribed air gap between the fixed driving electrode and the movable driving electrode, wherein each of the spacers has a spacer electrode portion that comes in contact with the movable driving electrode via an insulator and has the same potential as one of the electrodes at least in the approaching state.

    摘要翻译： 静电致动器包括：设置在硅衬底上的固定驱动电极; 可动驱动电极，其设置成与所述固定驱动电极相对并且在所述可动驱动电极和所述固定驱动电极之间产生静电力而接近所述固定驱动电极; 以及在固定驱动电极和可动驱动电极彼此接近并在固定驱动电极和可动驱动电极之间形成规定的气隙的接近状态下与可动驱动电极接触的一对间隔件，其中， 每个间隔物具有通过绝缘体与可动驱动电极接触的间隔电极部分，并且至少在接近状态下具有与电极之一相同的电位。