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18 条记录 (耗时 0.029 秒)

    Control system for a fuel pump
    1.
    发明授权
    Control system for a fuel pump 失效
    燃油泵控制系统

    公开(公告)号：US5188081A

    公开(公告)日：1993-02-23

    申请号：US808192

    申请日：1991-12-13

    申请人： Manfred Birk ,  Gerhard Engel ,  Wilhelm Eyberg ,  Thomas Henze ,  Alfred Schmitt

    发明人： Manfred Birk ,  Gerhard Engel ,  Wilhelm Eyberg ,  Thomas Henze ,  Alfred Schmitt

    IPC分类号： F02B1/04 ,  F02B3/06 ,  F02D41/22 ,  F02D41/34 ,  F02D41/40 ,  F02D45/00

    CPC分类号： F02D41/009 ,  F02D41/22 ,  F02D41/401 ,  F02B1/04 ,  F02B3/06 ,  F02D41/0097 ,  Y02T10/44

    摘要： A control system for a fuel pump, particularly for a solenoid-valve-controlled fuel pump in the case of a self-ignitable internal-combustion engine, in which at least one pulse transmitter is mounted on the crankshaft and/or on the camshaft. The generated pulse sequences include at least several reference pulses for establishing the beginning of fuel injection, as well as speed pulses for detecting the average and the instantaneous rotational speeds. A trial activation takes place to detect into which cylinder the fuel must be injected. Based on the reaction of the fuel injection system and/or of the internal-combustion engine, it is detected whether fuel was injected into the proper cylinder.

    摘要翻译： 一种用于燃料泵的控制系统，特别是用于在自燃式内燃机的情况下的电磁阀控制的燃料泵，其中至少一个脉冲发射器安装在曲轴和/或凸轮轴上。 产生的脉冲序列包括用于建立燃料喷射开始的至少几个参考脉冲以及用于检测平均值和瞬时转速的速度脉冲。 进行试运行以检测哪个气缸必须注入燃料。 基于燃料喷射系统和/或内燃机的反应，检测燃料是否被喷射到适当的气缸中。

    Fuel injection pump for internal combustion engines
    7.
    发明授权
    Fuel injection pump for internal combustion engines 失效
    内燃机燃油喷射泵

    公开(公告)号：US4811710A

    公开(公告)日：1989-03-14

    申请号：US220278

    申请日：1988-07-18

    申请人： Alfred Schmitt ,  Gerhard Stumpp ,  Dietrich Trachte ,  Wolf Wessel

    发明人： Alfred Schmitt ,  Gerhard Stumpp ,  Dietrich Trachte ,  Wolf Wessel

    IPC分类号： F02D1/02 ,  F02D1/12 ,  F02D17/00 ,  F02D17/04 ,  F02D41/22 ,  F02M63/02 ,  F02M39/00

    CPC分类号： F02D1/12 ,  F02D17/04 ,  F02D41/221 ,  F02M63/0205

    摘要： A fuel injection pump for internal combustion engines having a hydraulic control mechanism includes a control cylinder with a control piston actuating a control member, a hydraulic work chamber and one switching valve each for an input and an output controlled by a valve control unit. The inflow to and return from the work chamber is provided with the control valves in order to shut down the engine upon a shutoff or a malfunction in the hydraulic control mechanism. The fuel feed pump is electrically driven, and the hydraulic work chamber communicates with the fuel tank via a relief device. The supply of current to the valve control unit and the feed pump is switched on and off, along with the rest of the current supply to the engine, via a driving switch. Additionally, the valve control unit is embodied such that upon the appearance of a persistent control deviation of the control member, the valve control unit shuts off the feed pump. The relief device includes various variant embodiments operative upon shutoff of the current supply or the occurrence of a malfunction and enables the restoration of the control mechanism to its zero or stopping position.

    摘要翻译： 一种具有液压控制机构的内燃机用燃料喷射泵，具有：控制气缸，具有致动控制构件的控制活塞，液压工作室和一个切换阀，各自用于由阀控制单元控制的输入和输出。 为了在液压控制机构的关闭或故障时关闭发动机，从工作室流入和返回的控制阀设有控制阀。 燃料供给泵是电驱动的，并且液压工作室通过释放装置与燃料箱连通。 通过驱动开关，向阀控制单元和进给泵的电流供应以及通向发动机的剩余电流被打开和关闭。 此外，阀控制单元被实施为使得在出现控制构件的持续控制偏差时，阀控制单元关闭进给泵。 卸载装置包括在关闭当前供应或发生故障时操作的各种变型实施例，并且使得能够将控制机构恢复到其零点或停止位置。

    Method of eliminating lattice defects in a semiconductor device
    8.
    发明授权
    Method of eliminating lattice defects in a semiconductor device 失效
    消除半导体器件中的晶格缺陷的方法

    公开(公告)号：US4332627A

    公开(公告)日：1982-06-01

    申请号：US140270

    申请日：1980-04-14

    申请人： Alfred Schmitt ,  Gerd Schorer

    发明人： Alfred Schmitt ,  Gerd Schorer

    IPC分类号： H01L21/265 ,  H01L21/322 ,  H01L3/14 ,  B01J17/00

    CPC分类号： H01L21/3221 ,  H01L21/26513

    摘要： The invention relates to a semiconductor device and to a method of fully eliminating lattice defects in N-conductive zones of a semiconductor device which are generated by ion implantation of phosphorus. According to the invention, conductivity-determining ions like antimony or arsenic are implanted into phosphorus-doped zones of a semi-conductor device. A dosage of 1 to 10% of the phosphorus dose is used. The implantation of the antimony or arsenic takes place with the same, or with a greater implantation depth than the phosphorus depth. Subsequent to the antimony/arsenic implantation the device is annealed in an inert gas atmosphere at approximately 1000.degree. C.

    摘要翻译： 本发明涉及一种半导体器件和完全消除由离子注入磷产生的半导体器件的N导电区域中的晶格缺陷的方法。 根据本发明，将诸如锑或砷的导电率确定离子注入到半导体器件的磷掺杂区中。 使用1〜10％的磷剂量。 锑或砷的植入与磷深度相同或具有更大的注入深度进行。 在锑/砷注入之后，器件在约1000℃的惰性气体气氛中退火。

    Device for injecting fuel into a combustion chamber of an internal combustion engine
    9.
    发明授权
    Device for injecting fuel into a combustion chamber of an internal combustion engine 失效
    用于将燃料喷射到内燃机的燃烧室中的装置

    公开(公告)号：US4821696A

    公开(公告)日：1989-04-18

    申请号：US159521

    申请日：1988-01-07

    申请人： Bernhard Kaczynski ,  Alfred Schmitt ,  Ewald Eblen ,  Iwan Komaroff

    发明人： Bernhard Kaczynski ,  Alfred Schmitt ,  Ewald Eblen ,  Iwan Komaroff

    IPC分类号： F02M53/06 ,  F02M57/00 ,  F23Q7/00

    CPC分类号： F02M53/06 ,  F02M57/00 ,  F23Q7/001

    摘要： A device for injecting fuel into a combustion chamber of an internal combustion engine, having a glow coil (22, 92) disposed on the outlet side of the injection nozzle and increasing in size conically toward the combustion chamber; the coil is surrounded by a sleeve (30, 96) which firmly holds the end turn (88, 93) of the glow coil (22, 92) toward the combustion chamber and has a contact ring washer (46, 98), on which the other end turn (86, 94) of the glow coil (22, 92) is secured. The end turn (88, 93) toward the combustion chamber rests on an annular shoulder (90, 107), oriented according to the invention toward the combustion chamber, of the sleeve (30, 96), which surrounds an insertion opening (91, 106) the inside diameter of which is smaller than the outside diameter of the end turn (88, 93) toward the combustion chamber, but greater than the outside diameters of all the other turns of the glow element (22, 92). As a result, the glow coil (22, 92 ) can still be inserted and electrically contacted once the contact ring washer (46, 98) has already been fastened to the sleeve (30, 96) and with it forms a pre-fabricated structural unit.

    摘要翻译： PCT No.PCT / DE87 / 00012 Sec。 371日期：1988年1月7日 102（e）日期1988年1月7日PCT提交1987年1月14日PCT公布。 第WO87 / 06978号公报 1987年11月19日，日本特开2002-1377号公报。一种燃料喷射到内燃机的燃烧室内的装置，其具有设置在喷嘴的出口侧的辉光线圈（22,92），朝向燃烧室圆锥形地增大。 线圈由套筒（30,96）围绕，该套筒将辉光线圈（22,92）的端匝（88,93）牢固地保持朝向燃烧室，并具有接触环垫圈（46,98），接触环垫圈 发光线圈（22,92）的另一端部（86,94）被固定。 朝向燃烧室的端部转弯（88,93）位于套筒（30,96）上的环形肩部（90,107）上，环形肩部（90,107）根据本发明朝向燃烧室定向， 106），其内径小于朝向燃烧室的端匝（88,93）的外径，但大于灼热元件（22,92）的所有其它匝的外径。 结果，一旦接触环垫圈（46,98）已经紧固到套筒（30,96）上，发光线圈（22,92）仍然可以插入并电接触，并且形成预制结构 单元。

    Process for fabricating polycrystalline silicon film resistors
    10.
    发明授权
    Process for fabricating polycrystalline silicon film resistors 失效
    制造多晶硅膜电阻的工艺

    公开(公告)号：US4467519A

    公开(公告)日：1984-08-28

    申请号：US384371

    申请日：1982-04-01

    申请人： Reinhard Glang ,  San-Mei Ku ,  Alfred Schmitt

    发明人： Reinhard Glang ,  San-Mei Ku ,  Alfred Schmitt

    IPC分类号： H01L29/73 ,  H01L21/02 ,  H01L21/265 ,  H01L21/3215 ,  H01L21/331 ,  H01L21/822 ,  H01L21/8222 ,  H01L27/01 ,  H01L27/04 ,  H01L21/263 ,  H01L21/26 ,  H01L21/425

    CPC分类号： H01L28/20 ,  H01L21/32155 ,  H01L21/8222

    摘要： A method for fabricating polycrystalline silicon resistors is described which includes deposition of a polycrystalline silicon layer of very fine grain size upon an insulator surface, followed by ion implantation of boron equal to or slightly in excess of the solubility limit of the polycrystalline silicon. This ion implantation is normally done using a screen silicon dioxide surface layer. The structure may be annealed at temperatures of between about 800.degree. C. to 1100.degree. C. for 15 to 180 minutes to control the grain size of the polycrystalline silicon layer, homogenize the distribution of the boron ions throughout the entire film thickness and to raise the concentration of the boron in the silicon grains to the solid solubility limit. The suitable electrical contacts are now made to the polycrystalline silicon layer to form the resistor.

    摘要翻译： 描述了一种用于制造多晶硅电阻器的方法，其包括在绝缘体表面上沉积非常细晶粒尺寸的多晶硅层，然后将硼等离子注入等于或稍微超过多晶硅的溶解度极限。 这种离子注入通常使用屏幕二氧化硅表面层进行。 该结构可以在约800℃至1100℃的温度下退火15至180分钟以控制多晶硅层的晶粒尺寸，使硼离子在整个膜厚度上的分布均匀化并提高 硅颗粒中硼的浓度达到固溶度极限。 现在，将合适的电接触件制成多晶硅层以形成电阻器。