摘要:
A housing, in particular for semiconductor devices, a semiconductor device pin, and a method for the manufacturing of pins wherein at least one pin is punched out from a basic body, in particular a lead framed, by means of one or a plurality of punching process steps, wherein the pin is coated with a separate metal layer after the final punching out of said pin.
摘要:
A circuit arrangement can have a number of integrated circuit components, which are arranged on a carrier substrate. A reception circuit for receiving a control signal can be coupled to one of the connection pads on the input side and can be connected to each of the circuit components on the output side. A bridging circuit controlled by a test mode signal can electrically bridge the reception circuit. In a testing method, a plurality of connection pads can be connected to a first potential and at least one of the connection pads can be connected to a second potential. The bridging circuit can be activated and the current measured, by a test arrangement, at the at least one of the connection pads. Inspection for leakage currents in connections between input-side reception circuits and the circuit components can be measured.
摘要:
A semiconductor device testing apparatus, system, and method, in particular for testing the contacting with semiconductor devices positioned one upon the other, wherein at least two semiconductor devices are provided that are connected to a device module, at least one pin of a first semiconductor device is conductively connected with a pad, and at least one pin of a second semiconductor device also is to conductively connected with the pad. A first value is written into a memory cell of the first semiconductor device, a second value differing from the first value is written into a memory cell of the second semiconductor device, and a signal corresponding to the first value at the pin of the first semiconductor device and of a signal corresponding to the second value at the pin of the second semiconductor device is simultaneously output.
摘要:
A memory circuit includes one or several voltage generators for generating operating voltages for memory elements of the memory circuit and a means for selectively setting a current which may be supplied by one of the one or several voltage generators depending on an operating frequency for the memory circuit.
摘要:
The imaging system provides assistance during the positioning of a measuring tip as it is placed onto a contact region of a microchip, in order to measure an on-chip signal. The contact region is imaged in a magnified fashion. An insertion device is provided that is suitable for providing a display of the on-chip signal in the imaging plane.
摘要:
In order to be able to determine precisely a temperature of a semiconductor chip, in particular a semiconductor memory, during active operation, a temperature-dependent diode structure of the chip is connected to four chip terminals using four-conductor connection technology. In this manner, an inexpensive and accurate measuring mechanism is provided for measuring the temperature.
摘要:
Methods and apparatus for refreshing a dynamic memory cell in a memory circuit are provided, wherein the required time between refresh operations may be increased by increasing the potential difference between a high charge potential and common center potential used during a refresh mode relative to the potential difference between the high charge potential and the common center potential used during read or write modes.
摘要:
A device for driving a memory cell (601) of a memory module which can be operated with an external voltage (VEXT) and an operating frequency (fCLK), whereas the memory cell (601) has a capacitance (600) for storing charges and a transistor (602) for reading charges from the capacitance (600) and for writing charges to the capacitance (600), which transistor can be controlled with a control voltage (VPP), which has a charge store (614) for supplying a control voltage (VPP) which is greater than the external voltage (VEXT). The charge store (614) being able to be charged by the external voltage (VEXT), and the charging of the charge store (614) is able to be controlled by a charging control frequency (fCC) derived from the operating frequency (fCLK) of the memory module.
摘要翻译:一种用于驱动存储器模块的存储单元(601)的装置,其可以用外部电压(V OUT)和工作频率(f CLK)操作,而 存储单元(601)具有用于存储电荷的电容(600)和用于从电容(600)读取电荷并用于向电容(600)写入电荷的晶体管(602),该晶体管可以用控制电压 (V SUB PP)具有用于提供大于外部电压(V OUT)的控制电压(V SUB PP)的电荷存储器(614) / SUB>)。 电荷存储器(614)能够被外部电压(V OUT)充电,并且电荷存储器(614)的充电能够通过充电控制频率(f < 从存储器模块的工作频率(f CLK)导出的信号(SUB> CC SUB>)。
摘要:
An integrated chip has a clock signal input (1.1) for application of a first clock signal (clk1) and a clock signal output (1.2–1.5). Moreover, it has a phase locked loop (2), which, on the input side, is connected to the clock signal input (1.1) and serves far generating a second clock signal (clk2). Furthermore, the chip has a multiplexer (MUX), via which the first clock signal (clk1) or the second clock signal (clk2) can optionally be switched to the clock signal output (1.2–1.5), and a unit for frequency monitoring (3), which, on the input side, is connected to the clock signal input (1.1) and is designed and can be operated in such a way that, in the event of a limiting frequency (fmin) being undershot, the multiplexer (MUX) is caused to switch the first clock signal (clk1) to the clock signal output (1.2–1.5).
摘要:
A semiconductor memory includes storage cells (2) that have storage capacitors and transistors with an electrode, which is electrically biasable with two different electrical potentials (V1, V2) in order to open and close the transistor. The electrode potential (V2) intended for the off state of the transistor is a temperature-dependent potential, the value of which is controlled temperature-dependently by the semiconductor memory (1) so that the second electrical potential (V2) becomes more different from the first electrical potential (V1) as the temperature (T) increases.