Method for determining the temperature of a semiconductor chip and semiconductor chip with temperature measuring configuration
    1.
    发明授权
    Method for determining the temperature of a semiconductor chip and semiconductor chip with temperature measuring configuration 有权
    用于通过温度测量配置确定半导体芯片和半导体芯片的温度的方法

    公开(公告)号:US06612738B2

    公开(公告)日:2003-09-02

    申请号:US09801963

    申请日:2001-03-08

    IPC分类号: G01K701

    CPC分类号: G01K7/01 G01R31/30

    摘要: In order to be able to determine precisely a temperature of a semiconductor chip, in particular a semiconductor memory, during active operation, a temperature-dependent diode structure of the chip is connected to four chip terminals using four-conductor connection technology. In this manner, an inexpensive and accurate measuring mechanism is provided for measuring the temperature.

    摘要翻译: 为了能够精确地确定半导体芯片,特别是半导体存储器的温度,在有源操作期间,使用四导体连接技术将芯片的温度依赖二极管结构连接到四个芯片端子。 以这种方式,提供了用于测量温度的便宜且精确的测量机构。

    Memory circuit, method for manufacturing and method for operating the same
    3.
    发明授权
    Memory circuit, method for manufacturing and method for operating the same 有权
    存储电路,制造方法及其操作方法

    公开(公告)号:US06868018B2

    公开(公告)日:2005-03-15

    申请号:US10431422

    申请日:2003-05-07

    申请人: Manfred Dobler

    发明人: Manfred Dobler

    IPC分类号: G11C5/14 G11C7/00

    摘要: A memory circuit includes one or several voltage generators for generating operating voltages for memory elements of the memory circuit and a means for selectively setting a current which may be supplied by one of the one or several voltage generators depending on an operating frequency for the memory circuit.

    摘要翻译: 存储器电路包括用于产生存储器电路的存储器元件的工作电压的一个或多个电压发生器和用于根据存储器电路的工作频率选择性地设置可由一个或几个电压发生器之一提供的电流的装置 。

    Circuit arrangement having a number of integrated circuit components on a carrier substrate and method for testing a circuit arrangement of this type
    5.
    发明授权
    Circuit arrangement having a number of integrated circuit components on a carrier substrate and method for testing a circuit arrangement of this type 有权
    在载体基板上具有多个集成电路部件的电路装置以及用于测试这种电路装置的方法

    公开(公告)号:US07251772B2

    公开(公告)日:2007-07-31

    申请号:US10732402

    申请日:2003-12-11

    IPC分类号: G06F11/08 G06F13/14

    摘要: A circuit arrangement can have a number of integrated circuit components, which are arranged on a carrier substrate. A reception circuit for receiving a control signal can be coupled to one of the connection pads on the input side and can be connected to each of the circuit components on the output side. A bridging circuit controlled by a test mode signal can electrically bridge the reception circuit. In a testing method, a plurality of connection pads can be connected to a first potential and at least one of the connection pads can be connected to a second potential. The bridging circuit can be activated and the current measured, by a test arrangement, at the at least one of the connection pads. Inspection for leakage currents in connections between input-side reception circuits and the circuit components can be measured.

    摘要翻译: 电路装置可以具有多个集成电路部件,其被布置在载体基板上。 用于接收控制信号的接收电路可以耦合到输入侧的一个连接焊盘,并且可以连接到输出侧的每个电路部件。 由测试模式信号控制的桥接电路可以使接收电路电桥。 在测试方法中,多个连接焊盘可以连接到第一电位,并且至少一个连接焊盘可以连接到第二电位。 可以激活桥接电路,并且通过测试装置在至少一个连接焊盘处测量电流。 可以测量输入侧接收电路和电路部件之间的连接中的漏电流的检查。

    Refreshing dynamic memory cells in a memory circuit and a memory circuit
    6.
    发明授权
    Refreshing dynamic memory cells in a memory circuit and a memory circuit 失效
    刷新存储器电路和存储器电路中的动态存储单元

    公开(公告)号:US07064996B2

    公开(公告)日:2006-06-20

    申请号:US10817469

    申请日:2004-04-02

    申请人: Manfred Dobler

    发明人: Manfred Dobler

    IPC分类号: G11C7/00

    摘要: Methods and apparatus for refreshing a dynamic memory cell in a memory circuit are provided, wherein the required time between refresh operations may be increased by increasing the potential difference between a high charge potential and common center potential used during a refresh mode relative to the potential difference between the high charge potential and the common center potential used during read or write modes.

    摘要翻译: 提供了用于刷新存储器电路中的动态存储器单元的方法和装置,其中可以通过增加在刷新模式期间相对于电位差使用的高电荷电位和公共中心电位之间的电位差来增加刷新操作之间的所需时间 在读取或写入模式期间使用的高电荷电位和公共中心电位之间。

    Device for driving a memory cell of a memory module by means of a charge store
    7.
    发明授权
    Device for driving a memory cell of a memory module by means of a charge store 失效
    用于通过电荷存储器驱动存储器模块的存储单元的装置

    公开(公告)号:US07012843B2

    公开(公告)日:2006-03-14

    申请号:US10180818

    申请日:2002-06-26

    IPC分类号: G11C7/00

    CPC分类号: G11C11/4085

    摘要: A device for driving a memory cell (601) of a memory module which can be operated with an external voltage (VEXT) and an operating frequency (fCLK), whereas the memory cell (601) has a capacitance (600) for storing charges and a transistor (602) for reading charges from the capacitance (600) and for writing charges to the capacitance (600), which transistor can be controlled with a control voltage (VPP), which has a charge store (614) for supplying a control voltage (VPP) which is greater than the external voltage (VEXT). The charge store (614) being able to be charged by the external voltage (VEXT), and the charging of the charge store (614) is able to be controlled by a charging control frequency (fCC) derived from the operating frequency (fCLK) of the memory module.

    摘要翻译: 一种用于驱动存储器模块的存储单元(601)的装置,其可以用外部电压(V OUT)和工作频率(f CLK)操作,而 存储单元(601)具有用于存储电荷的电容(600)和用于从电容(600)读取电荷并用于向电容(600)写入电荷的晶体管(602),该晶体管可以用控制电压 (V SUB PP)具有用于提供大于外部电压(V OUT)的控制电压(V SUB PP)的电荷存储器(614) / SUB>)。 电荷存储器(614)能够被外部电压(V OUT)充电,并且电荷存储器(614)的充电能够通过充电控制频率(f < 从存储器模块的工作频率(f CLK)导出的信号(SUB> CC )。

    Integrated clock supply chip for a memory module, memory module comprising the integrated clock supply chip, and method for operating the memory module under test conditions
    8.
    发明授权
    Integrated clock supply chip for a memory module, memory module comprising the integrated clock supply chip, and method for operating the memory module under test conditions 有权
    用于存储器模块的集成时钟供应芯片,包括集成时钟供应芯片的存储器模块以及用于在测试条件下操作存储器模块的方法

    公开(公告)号:US07196554B2

    公开(公告)日:2007-03-27

    申请号:US10886523

    申请日:2004-07-07

    IPC分类号: H03K17/00

    摘要: An integrated chip has a clock signal input (1.1) for application of a first clock signal (clk1) and a clock signal output (1.2–1.5). Moreover, it has a phase locked loop (2), which, on the input side, is connected to the clock signal input (1.1) and serves far generating a second clock signal (clk2). Furthermore, the chip has a multiplexer (MUX), via which the first clock signal (clk1) or the second clock signal (clk2) can optionally be switched to the clock signal output (1.2–1.5), and a unit for frequency monitoring (3), which, on the input side, is connected to the clock signal input (1.1) and is designed and can be operated in such a way that, in the event of a limiting frequency (fmin) being undershot, the multiplexer (MUX) is caused to switch the first clock signal (clk1) to the clock signal output (1.2–1.5).

    摘要翻译: 集成芯片具有用于施加第一时钟信号(clk 1)和时钟信号输出(1.2-1.5)的时钟信号输入(1.1)。 此外,它具有锁相环(2),其在输入侧连接到时钟信号输入(1.1)并且用于远远地产生第二时钟信号(clk 2)。 此外,芯片具有多路复用器(MUX),第一时钟信号(clk 1)或第二时钟信号(clk 2)可以选择地切换到时钟信号输出(1.2-1.5),并且频率单位 在输入侧连接到时钟信号输入(1.1)并且被设计并可以以这样的方式操作的监视(3),使得在频率(fmin)不足的情况下,多路复用器 (MUX)将第一时钟信号(clk 1)切换到时钟信号输出(1.2-1.5)。

    Semiconductor memory and method for operating a semiconductor memory
    9.
    发明授权
    Semiconductor memory and method for operating a semiconductor memory 有权
    用于操作半导体存储器的半导体存储器和方法

    公开(公告)号:US07120074B2

    公开(公告)日:2006-10-10

    申请号:US10911230

    申请日:2004-08-04

    IPC分类号: G11C7/04

    摘要: A semiconductor memory includes storage cells (2) that have storage capacitors and transistors with an electrode, which is electrically biasable with two different electrical potentials (V1, V2) in order to open and close the transistor. The electrode potential (V2) intended for the off state of the transistor is a temperature-dependent potential, the value of which is controlled temperature-dependently by the semiconductor memory (1) so that the second electrical potential (V2) becomes more different from the first electrical potential (V1) as the temperature (T) increases.

    摘要翻译: 半导体存储器包括具有存储电容器的存储单元(2)和具有电极的晶体管,该电极可与两个不同的电位(V 1,V 2)电偏置,以便打开和闭合晶体管。 用于晶体管截止状态的电极电位(V 2)是依赖于温度的温度的电位,其值由半导体存储器(1)温度控制,使得第二电位(V 2)变得更大 与温度(T)增加时不同于第一电位(V 1)。

    Adapter apparatus for memory modules
    10.
    发明授权
    Adapter apparatus for memory modules 失效
    内存模块适配器

    公开(公告)号:US06788548B2

    公开(公告)日:2004-09-07

    申请号:US10377349

    申请日:2003-02-28

    IPC分类号: H05K702

    摘要: An adapter apparatus for receiving memory modules, each of which has a plurality of data terminals and a plurality of control terminals, comprises first data terminals, first control terminals, a first socket for receiving a first memory module with second data terminals and second control terminals, wherein the second data terminals are associated to the data terminals of the first memory module, wherein the second control terminals are associated to the control terminals of the first memory module, a second socket for receiving a second memory module with third data terminals and third control terminals, wherein the third data terminals are associated to the data terminals of the second memory module, wherein the third control terminals are associated to the control terminals of the second memory module, a signal transformation circuit with an input and an output, wherein the input is connected to the first control terminals, and wherein the output is connected to the second control terminals and to the third control terminals, and wherein a second group of first data terminals is connected to the third data terminals.

    摘要翻译: 一种用于接收存储器模块的适配器装置,每个存储器模块具有多个数据终端和多个控制终端,包括第一数据终端,第一控制终端,用于接收具有第二数据终端的第一存储器模块的第一插槽和第二控制终端 ,其中所述第二数据终端与所述第一存储器模块的数据终端相关联,其中所述第二控制终端与所述第一存储器模块的控制端相关联;第二插槽,用于接收具有第三数据终端的第二存储器模块和第三存储器模块 控制终端,其中第三数据终端与第二存储器模块的数据终端相关联,其中第三控制终端与第二存储器模块的控制端相关联,具有输入和输出的信号变换电路,其中, 输入连接到第一控制端,并且其中输出连接到第二控制 终端和第三控制终端,并且其中第二组第一数据终端连接到第三数据终端。