摘要:
A housing, in particular for semiconductor devices, a semiconductor device pin, and a method for the manufacturing of pins wherein at least one pin is punched out from a basic body, in particular a lead framed, by means of one or a plurality of punching process steps, wherein the pin is coated with a separate metal layer after the final punching out of said pin.
摘要:
A test method for a semiconductor memory device having a bidirectional data strobe terminal for a data strobe signal, and having at least one data terminal for a data signal at a test apparatus, which can at least generate data strobe and data signals and also transfer and evaluate data signals. The memory device is connected to a test apparatus, which generates data strobe and data signals, and transfers and evaluates data signals. In the course of the test using the data strobe and data signals, data are transferred from the first semiconductor memory device to a second semiconductor memory device of identical type and are evaluated after a read-out from the second semiconductor memory device by the test apparatus.
摘要:
A memory circuit includes a plurality of memory cells, an input/output area for addressing or writing onto the plurality of memory cells by means of electrical signals, and an optical-electrical converter for converting optical signals into the electrical signals, the plurality of memory cells and the input/output area being integrated on a chip, and the optical-electrical converter being mechanically connected to the chip or being integrated into the chip.
摘要:
A circuit arrangement can have a number of integrated circuit components, which are arranged on a carrier substrate. A reception circuit for receiving a control signal can be coupled to one of the connection pads on the input side and can be connected to each of the circuit components on the output side. A bridging circuit controlled by a test mode signal can electrically bridge the reception circuit. In a testing method, a plurality of connection pads can be connected to a first potential and at least one of the connection pads can be connected to a second potential. The bridging circuit can be activated and the current measured, by a test arrangement, at the at least one of the connection pads. Inspection for leakage currents in connections between input-side reception circuits and the circuit components can be measured.
摘要:
A semiconductor device testing apparatus, system, and method, in particular for testing the contacting with semiconductor devices positioned one upon the other, wherein at least two semiconductor devices are provided that are connected to a device module, at least one pin of a first semiconductor device is conductively connected with a pad, and at least one pin of a second semiconductor device also is to conductively connected with the pad. A first value is written into a memory cell of the first semiconductor device, a second value differing from the first value is written into a memory cell of the second semiconductor device, and a signal corresponding to the first value at the pin of the first semiconductor device and of a signal corresponding to the second value at the pin of the second semiconductor device is simultaneously output.
摘要:
A test arrangement with a test memory chip and a control device is provided. Error correction data are stored in the test memory chip with the aid of the control device. In the case of an error event, it is ascertained whether the error occurred on the error correction chip. If so, the memory controller compares the data stored in the error correction chip with the data of the auxiliary memory. The address of the error correction chip can be deduced from the address of the auxiliary memory, thereby enabling unambiguous addressing of a defective memory cell of the error correction chip.
摘要:
An integrated semiconductor memory device includes a first memory zone, a second memory zone, first address connections and a second address connection. A second address signal present at the second address connection specifies the access to the first or second memory zone, whereas it is specified via first address signals at the first address connections which memory cell is accessed within the first or second memory zone. In a first memory configuration, all address connections are driven externally with address signals and the access to a memory cell in the first or second memory zone is controlled. In a second memory configuration, only the first address connections are driven externally whereas a signaling bit in a mode register regulates the access to the first or second memory zone. This provides for access to the second memory zone even if there is no possibility of externally driving the second address connection.
摘要:
An apparatus (1) for testing a memory module (2) suitable for exchanging electrical signals with a motherboard (10) contains a device (8a-8k) suitable for detecting the operating state of at least one semiconductor chip (26a-26m) of the module, which device comprises a first set of signal lines (8a-8k), a microcontroller (3) with a memory device (32) for storing the operating state, said microcontroller being electrically connected to the signal lines (8a-8k), a clock generator (5) suitable for generating an operating clock, said clock generator being electrically connected to the microcontroller (3), and a signal connection (13) suitable for communicating a signal for controlling access to the memory module (2) between the circuit board arrangement (10) and the microcontroller (3) and for communicating to the microcontroller (3) a signal for initiating a process of detecting the operating state.
摘要:
A memory module includes at least one memory chip arranged on the memory module. Information about the memory module and/or the at least one memory chip arranged on the memory module can be stored directly on the memory chip, making use of a suited element, fuses or flip-flops, for example. A memory chip contains such an element for containing information relating to the memory chip and/or a memory module with which the memory chip is compatible, wherein the information containing element can be read out by means of an external processor.
摘要:
A test method for a semiconductor memory device having a bidirectional data strobe terminal for a data strobe signal, and having at least one data terminal for a data signal at a test apparatus, which can at least generate data strobe and data signals and also transfer and evaluate data signals. The memory device is connected to a test apparatus, which generates data strobe and data signals, and transfers and evaluates data signals. In the course of the test using the data strobe and data signals, data are transferred from the first semiconductor memory device to a second semiconductor memory device of identical type and are evaluated after a read-out from the second semiconductor memory device by the test apparatus.