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    Transparent electronics based on transfer printed carbon nanotubes on rigid and flexible substrates
    3.
    发明授权
    Transparent electronics based on transfer printed carbon nanotubes on rigid and flexible substrates 有权
    基于在刚性和柔性基底上转印碳纳米管的透明电子学

    公开(公告)号：US08847313B2

    公开(公告)日：2014-09-30

    申请号：US12538597

    申请日：2009-08-10

    申请人： Chongwu Zhou ,  Fumiaki Ishikawa ,  Hsiao-Kang Chang ,  Koungmin Ryu

    发明人： Chongwu Zhou ,  Fumiaki Ishikawa ,  Hsiao-Kang Chang ,  Koungmin Ryu

    IPC分类号： H01L27/12 ,  B82Y10/00 ,  H01L51/00 ,  H01L51/05

    CPC分类号： H01L51/003 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545

    摘要： Methods and devices for transparent electronics are disclosed. According to an embodiment, transparent electronics are provided based on transfer printed carbon nanotubes that can be disposed on both rigid and flexible substrates. Methods are provided to enable highly aligned single-walled carbon nanotubes (SWNTs) to be used in transparent electronics for achieving high carrier mobility while using low-temperature processing. According to one method, highly aligned nanotubes can be grown on a first substrate. Then, the aligned nanotubes can be transferred to a rigid or flexible substrate having pre-patterned gate electrodes. Source and drain electrodes can be formed on the transferred nanotubes. The subject devices can be integrated to provide logic gates and analog circuitry for a variety of applications.

    摘要翻译： 公开了用于透明电子器件的方法和装置。 根据一个实施例，基于可以设置在刚性和柔性基板上的转印印刷碳纳米管提供透明电子器件。 提供了使得高度对准的单壁碳纳米管（SWNT）用于透明电子学中以实现高载流子迁移率同时使用低温处理的方法。 根据一种方法，高度排列的纳米管可以在第一衬底上生长。 然后，可以将取向的纳米管转移到具有预图案化栅电极的刚性或柔性衬底。 源极和漏极可以在转移的纳米管上形成。 可以将主题装置集成以提供用于各种应用的逻辑门和模拟电路。

    WAFER-SCALE FABRICATION OF SEPARATED CARBON NANOTUBE THIN-FILM TRANSISTORS
    9.
    发明申请
    WAFER-SCALE FABRICATION OF SEPARATED CARBON NANOTUBE THIN-FILM TRANSISTORS 审中-公开
    分离碳纳米管薄膜晶体管的尺寸制备

    公开(公告)号：US20110101302A1

    公开(公告)日：2011-05-05

    申请号：US12940674

    申请日：2010-11-05

    申请人： Chongwu Zhou ,  Chuan Wang ,  Jialu Zhang ,  Koungmin Ryu ,  Alexander Badmaev ,  Lewis Gomez De Arco

    发明人： Chongwu Zhou ,  Chuan Wang ,  Jialu Zhang ,  Koungmin Ryu ,  Alexander Badmaev ,  Lewis Gomez De Arco

    IPC分类号： H01L29/775 ,  H01L21/20 ,  H01L21/84 ,  H01L51/52 ,  B82Y40/00 ,  B82Y99/00

    CPC分类号： H01L27/3248 ,  B82Y10/00 ,  H01L27/3262 ,  H01L51/0049 ,  H01L51/0545 ,  H01L51/0562

    摘要： Methods, materials, systems and apparatus are described for depositing a separated nanotube networks, and fabricating, separated nanotube thin-film transistors and N-type separated nanotube thin-film transistors. In one aspect, a method of depositing a wafer-scale separated nanotube networks includes providing a substrate with a dielectric layer. The method includes cleaning a surface of the wafer substrate to cause the surface to become hydrophilic. The cleaned surface of the wafer substrate is functionalized by applying a solution that includes linker molecules terminated with amine groups. High density, uniform separated nanotubes are assembled over the functionalized surface by applying to the functionalized surface a separated nanotube solution that includes semiconducting nanotubes.

    摘要翻译： 描述了用于沉积分离的纳米管网络的方法，材料，系统和装置，以及制造分离的纳米管薄膜晶体管和N型分离的纳米管薄膜晶体管。 在一个方面，沉积晶片级隔离的纳米管网络的方法包括向基片提供介电层。 该方法包括清洁晶片衬底的表面以使表面变得亲水。 通过施加包含以胺基封端的连接分子的溶液来使晶片衬底的清洁表面功能化。 通过向功能化表面施加包括半导体纳米管的分离的纳米管溶液，在功能化表面上组装高密度均匀分离的纳米管。

    Chemical sensor using semiconducting metal oxide nanowires
    10.
    发明申请
    Chemical sensor using semiconducting metal oxide nanowires 有权
    使用半导体金属氧化物纳米线的化学传感器

    公开(公告)号：US20050247961A1

    公开(公告)日：2005-11-10

    申请号：US11077164

    申请日：2005-03-09

    申请人： Chongwu Zhou

    发明人： Chongwu Zhou

    IPC分类号： G01N27/414 ,  H01L21/336 ,  H01L29/745 ,  H01L29/76 ,  H01L29/786

    CPC分类号： G01N27/4146 ,  H01L29/7869 ,  Y10S977/936 ,  Y10S977/938

    摘要： Indium oxide nanowires are used for determining information about different chemicals or Biologics. Chemicals are absorbed to the surface of the nanowires, and cause the semiconducting characteristics of the Nanowires to change. These changed characteristics are sensed, and used to determine either the presence of the materials and/or the concentration of the materials. The nanowires may be between 10 and 30 nm in diameter, formed using a comparable size particle of catalyst material. The nanowires may then be used as part of the channel of a field effect transistor, and the field effect transistor is itself characterized.

    摘要翻译： 氧化铟纳米线用于确定有关不同化学物质或生物制剂的信息。 化学品被吸收到纳米线的表面，并导致纳米线的半导体特性发生变化。 感测到这些变化的特性，并用于确定材料的存在和/或材料的浓度。 纳米线的直径可以在10至30nm之间，使用相当尺寸的催化剂材料颗粒形成。 纳米线然后可以用作场效应晶体管的通道的一部分，并且场效应晶体管本身被表征。