公开(公告)号：US20050240913A1

公开(公告)日：2005-10-27

申请号：US11107446

申请日：2005-04-15

Applicant: Mark Liu ,  Chun-Hung Lin

Inventor： Mark Liu ,  Chun-Hung Lin

IPC: G06F9/45

CPC classification number: G06Q10/06

Abstract: A method of generating organizational structure and a method of controlling authorization thereof are provided. The method separates an organization into a plurality of nodes and links, and defines attributes for nodes and links, so as to describe the details of nodes and links, respectively. In case an attribute of some node (link) needs to be modified, the whole organizational structure is automatically modified by only modifying the node (link) attribute without having to sequentially change all attributes.

Abstract translation: 提供了一种生成组织结构的方法和一种控制其授权的方法。 该方法将组织分为多个节点和链路，并定义节点和链路的属性，以分别描述节点和链路的细节。 如果需要修改某个节点（链接）的属性，则只需修改节点（链接）属性即可自动修改整个组织结构，而不必依次更改所有属性。

公开(公告)号：US07767509B2

公开(公告)日：2010-08-03

申请号：US11692366

申请日：2007-03-28

Applicant: Mark Liu ,  Rob James ,  Jake Jensen ,  Karson Knutson

Inventor： Mark Liu ,  Rob James ,  Jake Jensen ,  Karson Knutson

IPC: H01L21/336

CPC classification number: H01L21/268 ,  H01L21/26513 ,  H01L29/66575

Abstract: Methods and associated structures of forming a microelectronic device are described. Those methods may include implanting the source/drain region, forming a multilayer cap on the source/drain region, annealing the source/drain region, and removing the multilayer cap.

Abstract translation: 描述形成微电子器件的方法和相关结构。 这些方法可以包括注入源极/漏极区域，在源极/漏极区域上形成多层帽，退火源极/漏极区域以及去除多层帽盖。

公开(公告)号：US20100038685A1

公开(公告)日：2010-02-18

申请号：US12191814

申请日：2008-08-14

Applicant: Cory Weber ,  Mark Liu ,  Anand Murthy ,  Hemant Deshpande ,  Daniel B. Aubertine

Inventor： Cory Weber ,  Mark Liu ,  Anand Murthy ,  Hemant Deshpande ,  Daniel B. Aubertine

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/7848 ,  H01L21/26506 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/41783 ,  H01L29/66477 ,  H01L29/66628 ,  H01L29/78 ,  H01L29/7847 ,  H01L29/7849

Abstract: A device is provided. The device includes a transistor formed on a semiconductor substrate, the transistor having a conduction channel. The device includes at least one edge dislocation formed adjacent to the conduction channel on the semiconductor substrate. The device also includes at least one free surface introduced above the conduction channel and the at least one edge dislocation.

Abstract translation: 提供了一种设备。 该器件包括形成在半导体衬底上的晶体管，该晶体管具有导通沟道。 该器件包括与半导体衬底上的导电沟道相邻形成的至少一个边缘位错。 该装置还包括在导电通道之上引入的至少一个自由表面和至少一个边缘错位。

公开(公告)号：US20080242038A1

公开(公告)日：2008-10-02

申请号：US11692366

申请日：2007-03-28

Applicant: Mark Liu ,  Rob James ,  Jake Jensen ,  Karson Knutson

Inventor： Mark Liu ,  Rob James ,  Jake Jensen ,  Karson Knutson

IPC: H01L21/336

CPC classification number: H01L21/268 ,  H01L21/26513 ,  H01L29/66575

Abstract: Methods and associated structures of forming a microelectronic device are described. Those methods may include implanting the source/drain region, forming a multilayer cap on the source/drain region, annealing the source/drain region, and removing the multilayer cap.

Abstract translation: 描述形成微电子器件的方法和相关结构。 这些方法可以包括注入源极/漏极区域，在源极/漏极区域上形成多层帽，退火源极/漏极区域以及去除多层帽盖。

公开(公告)号：US20050202644A1

公开(公告)日：2005-09-15

申请号：US11120353

申请日：2005-05-02

Applicant: Mark Doczy ,  Mark Liu ,  Jack Kavalieros ,  Justin Brask ,  Matthew Metz ,  Robert Chau

Inventor： Mark Doczy ,  Mark Liu ,  Jack Kavalieros ,  Justin Brask ,  Matthew Metz ,  Robert Chau

IPC: H01L21/268 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/51 ,  H01L21/00 ,  H01L21/84

CPC classification number: H01L29/495 ,  H01L21/268 ,  H01L21/823828 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66575 ,  H01L29/6659

Abstract: Methods of forming a microelectronic structure are described. Those methods comprise providing a substrate comprising source/drain and gate regions, wherein the gate region comprises a metal layer disposed on a gate dielectric layer, and then laser annealing the substrate.

Abstract translation: 描述形成微电子结构的方法。 这些方法包括提供包括源极/漏极和栅极区域的衬底，其中栅极区域包括设置在栅极介电层上的金属层，然后激光退火衬底。

公开(公告)号：US20050048738A1

公开(公告)日：2005-03-03

申请号：US10649958

申请日：2003-08-28

Applicant: Mohamad Shaheen ,  Mark Liu ,  Mitchell Taylor

Inventor： Mohamad Shaheen ,  Mark Liu ,  Mitchell Taylor

IPC: B23K26/18 ,  B23K26/40 ,  H01L21/30 ,  H01L21/301 ,  H01L21/762

CPC classification number: B23K26/18 ,  B23K26/40 ,  B23K26/53 ,  B23K26/55 ,  B23K2103/50 ,  H01L21/76254

Abstract: Arrangements incorporating laser-induced cleaving.

Abstract translation: 结合激光诱导切割的布置。

公开(公告)号：US20100042467A1

公开(公告)日：2010-02-18

申请号：US12191981

申请日：2008-08-14

Applicant: Reza Bundy ,  John Shiple ,  Mark Liu

Inventor： Reza Bundy ,  John Shiple ,  Mark Liu

IPC: G06Q30/00

CPC classification number: G06Q30/02 ,  G06Q30/0201 ,  G06Q30/0241 ,  G06Q30/0601

Abstract: The system provides a method and apparatus for automatically generating marketing and promotional information for an item for sale. The system tracks sales and offers for sale of similar items and determines the words, images, and descriptions that have been most useful in selling items in the past. The seller is presented with information about descriptions that can maximize price and/or minimize time on the market. The system operates by collecting data from prior sales including selling price, expected selling price, start date, end date, images of item, time of year, geographical region, and a dictionary of terms and phrases used in prior sales. These factors are analyzed and identified as helpful or hurtful in a number of categories, including selling price and/or time on the market.

Abstract translation: 该系统提供用于自动生成用于销售的物品的营销和促销信息的方法和装置。 系统跟踪销售和提供类似物品的销售，并确定过去最有用的词汇，图像和描述。 向卖方呈现关于可以最大限度地提高价格和/或最小化市场时间的描述的信息。 该系统通过收集先前销售的数据，包括销售价格，预期售价，开始日期，结束日期，项目图像，时间，地理区域以及以前销售中使用的术语和短语字典。 这些因素在许多类别中被分析和识别为有益或有害的，包括销售价格和/或市场上的时间。

公开(公告)号：US20080115802A1

公开(公告)日：2008-05-22

申请号：US11603211

申请日：2006-11-22

Applicant: Rey-Hsing Chiang ,  Raulor Guo ,  Chen-Tsung Huang ,  Frank Liao ,  Mark Liu ,  Ruijing Han ,  Jason Yan

Inventor： Rey-Hsing Chiang ,  Raulor Guo ,  Chen-Tsung Huang ,  Frank Liao ,  Mark Liu ,  Ruijing Han ,  Jason Yan

IPC: B08B7/00 ,  C23F1/00

CPC classification number: H01L21/67057 ,  B08B3/04 ,  C02F1/42 ,  C02F2103/04 ,  H01L21/02052 ,  Y10T137/0402

Abstract: A cleaning method for improving a wafer surface polluted by metal ions is disclosed. This method is to install an ion change filter in a pipeline, in which deionized water runs, to reduce the number of metal ions to be less than 0.1 ppb, so as to avoid that the metal ions of deionized water remains on the surface of the wafer during the process in cleaning the wafer and diffuses in the thermal oxidation process afterwards to affect the quality of oxide film.

Abstract translation: 公开了一种用于改善被金属离子污染的晶片表面的清洁方法。 该方法是在管道中安装离子变换过滤器，其中去离子水运行，以将金属离子的数量减少到小于0.1ppb，以避免去离子水的金属离子保留在 晶片在清洗晶片的过程中，然后在热氧化过程中扩散，影响氧化膜的质量。

公开(公告)号：US06952269B2

公开(公告)日：2005-10-04

申请号：US10253762

申请日：2002-09-24

Applicant: Jose A. Maiz ,  Sarangapani Sista ,  Mark Liu

Inventor： Jose A. Maiz ,  Sarangapani Sista ,  Mark Liu

IPC: H01L21/268 ,  H01L21/324 ,  G01B9/02

CPC classification number: H01L21/324 ,  H01L21/268

Abstract: A method for adiabatically heating semiconductor device surfaces, including using capping layers to prevent deformation of surfaces. Using the method, semiconductor surfaces having varying topographies or topologies may be heated adiabatically. In an embodiment of the method, one or more capping layers may be formed over a semiconductor surface, to further prevent deformation of semiconductor surfaces.

Abstract translation: 一种用于绝热加热半导体器件表面的方法，包括使用覆盖层以防止表面变形。 使用该方法，可以绝热地加热具有变化的形貌或拓扑的半导体表面。 在该方法的一个实施例中，可以在半导体表面上形成一个或多个封盖层，以进一步防止半导体表面的变形。

公开(公告)号：US20050191834A1

公开(公告)日：2005-09-01

申请号：US11122433

申请日：2005-05-05

Applicant: Jack Hwang ,  Mitchell Taylor ,  Mark Liu ,  Nick Lindert

Inventor： Jack Hwang ,  Mitchell Taylor ,  Mark Liu ,  Nick Lindert

IPC: H01L21/223 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/3205 ,  H01L21/4763

CPC classification number: H01L29/6659 ,  H01L21/2236 ,  H01L21/28035 ,  H01L21/823814

Abstract: A polysilicon structure may be defined on a semiconductor substrate using plasma doping to dope the sidewalls and upper surface of the polysilicon material as well as the source drain extensions. Shortly after plasma doping, the structure may be encapsulated within a suitable capping layer to prevent the removal of the thin surface doped regions during subsequent semiconductor processing.