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    ELECTRODEPOSITION OF CoNiP FILMS
    3.
    发明申请
    ELECTRODEPOSITION OF CoNiP FILMS 审中-公开
    CoNiP膜的电沉积

    公开(公告)号：US20120080317A1

    公开(公告)日：2012-04-05

    申请号：US12894238

    申请日：2010-09-30

    申请人： Venkatram Venkatasamy ,  Ming Sun ,  Ibro Tabakovic ,  Michael Xuefei Tang

    发明人： Venkatram Venkatasamy ,  Ming Sun ,  Ibro Tabakovic ,  Michael Xuefei Tang

    IPC分类号： B32B9/00 ,  C25D9/04

    CPC分类号： C25D3/562 ,  C09D1/00 ,  C09D5/4488

    摘要： A method of forming CoNiP on a substrate that includes the steps of placing a substrate in an electroplating bath, the electroplating bath containing an electroplating composition, the electroplating composition including: a nickel source; a cobalt source; and at least about 0.1 M phosphorus source; and applying a deposition current to the substrate, wherein application of the deposition current to the substrate will cause a CoNiP layer having a thickness of at least about 500 nanometers to be electrodeposited on the substrate.

    摘要翻译： 一种在衬底上形成CoNiP的方法，包括将衬底放置在电镀浴中的步骤，所述电镀浴含有电镀组合物，所述电镀组合物包括：镍源; 钴源; 和至少约0.1M磷源; 以及向衬底施加沉积电流，其中将沉积电流施加到衬底将使得具有至少约500纳米厚度的CoNiP层电沉积在衬底上。

    Programmable metallization cells and methods of forming the same
    5.
    发明授权
    Programmable metallization cells and methods of forming the same 有权
    可编程金属化电池及其形成方法

    公开(公告)号：US07842938B2

    公开(公告)日：2010-11-30

    申请号：US12269514

    申请日：2008-11-12

    申请人： Venkatram Venkatasamy ,  Ming Sun ,  Michael Xuefei Tang

    发明人： Venkatram Venkatasamy ,  Ming Sun ,  Michael Xuefei Tang

    IPC分类号： H01L47/00

    CPC分类号： H01L45/146 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1266 ,  H01L45/1608 ,  H01L45/1675

    摘要： A programmable metallization cell (PMC) that includes an active electrode; a nanoporous layer disposed on the active electrode, the nanoporous layer comprising a plurality of nanopores and a dielectric material; and an inert electrode disposed on the nanoporous layer. Other embodiments include forming the active electrode from silver iodide, copper iodide, silver sulfide, copper sulfide, silver selenide, or copper selenide and applying a positive bias to the active electrode that causes silver or copper to migrate into the nanopores. Methods of formation are also disclosed.

    摘要翻译： 包括有源电极的可编程金属化电池（PMC）; 设置在所述有源电极上的纳米多孔层，所述纳米多孔层包含多个纳米孔和电介质材料; 以及设置在纳米多孔层上的惰性电极。 其它实施方案包括由碘化银，碘化铜，硫化银，硫化铜，硒化银或硒化铜形成活性电极，并向活性电极施加正偏压，使活性电极引起银或铜迁移到纳米孔中。 还公开了形成方法。

    Memory with separate read and write paths
    9.
    发明授权
    Memory with separate read and write paths 有权
    内存具有单独的读写路径

    公开(公告)号：US08422278B2

    公开(公告)日：2013-04-16

    申请号：US12974679

    申请日：2010-12-21

    申请人： Haiwen Xi ,  Hongyue Liu ,  Michael Xuefei Tang ,  Antoine Khoueir ,  Song S. Xue

    发明人： Haiwen Xi ,  Hongyue Liu ,  Michael Xuefei Tang ,  Antoine Khoueir ,  Song S. Xue

    IPC分类号： G11C11/15

    CPC分类号： G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

    摘要： A memory unit includes a giant magnetoresistance cell electrically coupled between a write bit line and a write source line. The giant magnetoresistance cell includes a free magnetic layer separated from a first pinned magnetic layer by a first non-magnetic electrically conducting layer. A magnetic tunnel junction data cell is electrically coupled between a read bit line and a read source line. The magnetic tunnel junction data cell includes the free magnetic layer separated from a second pinned magnetic layer by an oxide barrier layer. A write current passes through the giant magnetoresistance cell to switche the giant magnetoresistance cell between a high resistance state and a low resistance state. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by magnetostatic coupling with the giant magnetoresistance cell, and be read by a read current passing though the magnetic tunnel junction data cell.

    摘要翻译： 存储单元包括电耦合在写位线和写入源线之间的巨磁电阻单元。 巨磁阻单元包括通过第一非磁性导电层与第一固定磁性层分离的自由磁性层。 磁性隧道结数据单元电耦合在读取位线和读取源极线之间。 磁性隧道结数据单元包括通过氧化物阻挡层与第二固定磁性层分离的自由磁性层。 写入电流通过巨磁电阻单元，以在高电阻状态和低电阻状态之间切换巨磁电阻单元。 磁隧道结数据单元被配置为通过与巨磁电阻单元的静磁耦合在高电阻状态和低电阻状态之间切换，并且通过通过磁性隧道结数据单元的读取电流来读取。