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18 条记录 (耗时 0.047 秒)

    Apparatus for manufacturing semiconductor device
    6.
    发明申请
    Apparatus for manufacturing semiconductor device 审中-公开
    半导体器件制造装置

    公开(公告)号：US20080138176A1

    公开(公告)日：2008-06-12

    申请号：US11881012

    申请日：2007-07-25

    申请人： Hyung-Joon Kim ,  Seung-Bae Lee ,  Dae-Hyun Yang ,  Ki-Yung Lee

    发明人： Hyung-Joon Kim ,  Seung-Bae Lee ,  Dae-Hyun Yang ,  Ki-Yung Lee

    IPC分类号： H01L21/677

    CPC分类号： H01L21/67173 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201

    摘要： The present invention provides an apparatus for manufacturing a semiconductor device. The apparatus includes vacuum wafer transfer modules disposed in a line so as to correspond to stages, a loadlock chamber module transferring wafers in vacuum, first process chambers disposed around the vacuum wafer transfer modules so as to process the wafers transferred from the loadlock chamber module, first buffer stages disposed in the vacuum wafer transfer modules so that the wafers are loaded thereon and unloaded therefrom, a first transfer robot disposed between the first process chambers so as to transfer the wafers from the loadlock chamber module to the first process chambers and then to transfer the wafers from the loadlock chamber module onto the first buffer stages, second process chambers disposed around the vacuum wafer transfer modules so as to process the wafers transferred from the first buffer stages, and a second transfer robot disposed between the second process chambers so as to transfer the wafers, which are transferred to the first buffer stages, to the second process chambers.

    摘要翻译： 本发明提供一种半导体器件的制造装置。 该装置包括：一排设置成对应于一级的真空晶片传送模块，一个负载锁定室模块，在真空中传送晶片，设置在真空晶片传送模块周围的第一处理室，以处理从负载锁定室模块传送的晶片， 设置在真空晶片转移模块中的第一缓冲级，使得晶片在其上装载并卸载;第一传送机器人，设置在第一处理室之间，以将晶片从负载锁定室模块传送到第一处理室，然后到 将晶片从负载锁定室模块转移到第一缓冲级上，第二处理室设置在真空晶片传送模块周围，以处理从第一缓冲级传送的晶片，以及设置在第二处理室之间的第二传送机器人，以便 以将转移到第一缓冲级的晶片传送到第二缓冲级 处理室。

    Affiliate investigation system and method
    7.
    发明授权
    Affiliate investigation system and method 有权
    会员调查制度和方法

    公开(公告)号：US08892459B2

    公开(公告)日：2014-11-18

    申请号：US13190338

    申请日：2011-07-25

    申请人： Andrew Skalet ,  Hyung-Joon Kim ,  David Naffziger

    发明人： Andrew Skalet ,  Hyung-Joon Kim ,  David Naffziger

    IPC分类号： G06Q30/00

    CPC分类号： G06Q30/018 ,  G06Q30/00 ,  H04L29/08072

    摘要： Given an advertisement placed by a rogue affiliate that takes steps to hide its affiliate ID from affiliate investigators, the affiliate ID may be identified using a step-wise link follower to process the advertisement's target URIs. For each redirection step inclusively between the original target URI and the ultimate destination URI, the current URI is analyzed and requested according to either a trusted request method or a non-trusted request method depending on whether the resource to which the URI refers is known to be a trusted resource. The non-trusted request method is designed to thwart the rogue affiliate's efforts to identify an affiliate investigator as the source of the request.

    摘要翻译： 鉴于流氓联盟的广告，其采取步骤从联属调查员隐藏其会员身份，可以使用逐步的链接跟随者来识别会员ID，以处理广告的目标URI。 对于在原始目标URI和最终目的地URI之间包括的每个重定向步骤，根据可信请求方法或不可信请求方法来分析和请求当前URI，这取决于URI引用的资源是否已知 成为值得信赖的资源。 不信任的请求方法旨在阻止流氓联盟成为识别联属调查员作为请求来源的努力。

    Device for electromechanically actuating intake and exhaust valve
    8.
    发明授权
    Device for electromechanically actuating intake and exhaust valve 失效
    用于机电操作进气和排气阀的装置

    公开(公告)号：US06581556B2

    公开(公告)日：2003-06-24

    申请号：US10147678

    申请日：2002-05-16

    申请人： Hyung-Joon Kim

    发明人： Hyung-Joon Kim

    IPC分类号： F01L904

    CPC分类号： F01L9/04 ,  F01L2009/0451 ,  F01L2101/00

    摘要： An electromechanical valve train is provided that includes a housing; an outer coil assembly including a first core having an first aperture formed therein and a first coil wound on the first core; an inner coil assembly including a second core having an second aperture formed therein and a second coil wound on the second core, the inner coil assembly being secured to the first aperture of the outer coil assembly; an armature including an upper plate, a lower plate, a rod connecting the upper plate and the lower plate, and an insulator disposed between the rod and the upper plate or between the rod and the lower plate, the rod being vertically movably inserted into the second aperture of the inner coil assembly; an upper biasing member; a lower biasing member; and a valve connected to the lower plate of the armature.

    摘要翻译： 提供一种机电阀系列，其包括壳体; 外部线圈组件，包括其中形成有第一孔的第一芯和缠绕在第一芯上的第一线圈; 内线圈组件，其包括具有形成在其中的第二孔的第二芯和缠绕在第二芯上的第二线圈，内线圈组件固定到外线圈组件的第一孔; 电枢，包括上板，下板，连接上板和下板的杆，以及设置在杆与上板之间或杆与下板之间的绝缘体，杆可上下移动地插入 内线圈组件的第二孔; 上部偏置构件; 下偏置构件; 以及连接到电枢的下板的阀。

    Method of protecting metals from corrosion using thiol compounds
    9.
    发明授权
    Method of protecting metals from corrosion using thiol compounds 有权
    使用硫醇化合物保护金属免受腐蚀的方法

    公开(公告)号：US07524535B2

    公开(公告)日：2009-04-28

    申请号：US10786379

    申请日：2004-02-25

    申请人： Hyung-Joon Kim ,  Jinming Zhang ,  Richard D. Gandour ,  Roy Hoan Yoon

    发明人： Hyung-Joon Kim ,  Jinming Zhang ,  Richard D. Gandour ,  Roy Hoan Yoon

    IPC分类号： B05D7/14

    CPC分类号： B82Y30/00 ,  C23C22/02 ,  C23C22/68 ,  C23C22/83 ,  C23C2222/20 ,  C23F11/161

    摘要： This invention relates to a method of coating a metal surface by applying a solution containing an alkanethiol compound and a solvent to a metal surface, allowing the formation of a self-assembled monolayer, which presents as a robust barrier to corrosion. The alkanethiol compounds have a general formula, R(CH2)nSH, where R represents methyl, carboxyl, hydroxyl, formyl, or amide; n is in the range of 7 to 21, preferably in the range of 12 to 18.

    摘要翻译： 本发明涉及通过将含有链烷硫醇化合物和溶剂的溶液施加到金属表面来涂覆金属表面的方法，允许形成自组装单层，其呈现为腐蚀性的坚固屏障。 烷硫醇化合物具有通式R（CH 2）n SH，其中R代表甲基，羧基，羟基，甲酰基或酰胺; n在7至21的范围内，优选在12至18的范围内。

    Semiconductor plasma-processing apparatus and method
    10.
    发明申请
    Semiconductor plasma-processing apparatus and method 审中-公开
    半导体等离子体处理装置及方法

    公开(公告)号：US20060162863A1

    公开(公告)日：2006-07-27

    申请号：US11332169

    申请日：2006-01-17

    申请人： Hyung-Joon Kim ,  Ki-Yung Lee

    发明人： Hyung-Joon Kim ,  Ki-Yung Lee

    IPC分类号： C23F1/00 ,  B44C1/22 ,  H05H1/24 ,  H01L21/302 ,  C23C16/00

    CPC分类号： H01J37/32357 ,  H01J37/321

    摘要： A semiconductor plasma-processing apparatus smoothes effects of side radical-concentration, which are frequently generated by inductive-coupling plasma sources, enhancing the etching uniformity therein. The apparatus includes a remote plasma generator providing lots of radicals and ions from activating processing gas; a reaction chamber having an inflow port through which the activated processing gas; a susceptor, on which a wafer is settled, disposed in the reaction chamber; and an inductive-coupling plasma generator disposed in the reaction chamber, providing high-frequency energy to the activated processing gas. As radicals and ions are affluently generated enough to conduct an etching process, by means of the remote and inductive-coupling plasma sources, the reaction sprightly proceeds to improve the etching efficiency.

    摘要翻译： 半导体等离子体处理装置平滑通过电感耦合等离子体源频繁产生的侧自由基浓度的作用，增强其中的蚀刻均匀性。 该装置包括远程等离子体发生器，其从激活处理气体提供大量的自由基和离子; 反应室，具有流入口，活化处理气体通过该流入口; 设置在反应室内的基座，其上沉积有晶片; 以及设置在反应室中的感应耦合等离子体发生器，为激活的处理气体提供高频能量。 由于自由基和离子富足地产生足以进行蚀刻工艺，通过远程和电感耦合等离子体源，反应急剧进行以提高蚀刻效率。