PARTICULATE FILTER REGENERATING SYSTEM
    5.
    发明申请
    PARTICULATE FILTER REGENERATING SYSTEM 有权
    颗粒过滤器再生系统

    公开(公告)号:US20100018190A1

    公开(公告)日:2010-01-28

    申请号:US12502728

    申请日:2009-07-14

    IPC分类号: F01N3/023 F01N3/00

    摘要: Disclosed is a particulate filter regenerating system which comprises a fuel injection device (7) adapted to inject fuel into a combustion chamber of an engine body (1), and an exhaust gas temperature-adjusting device (33) adapted, when a PM deposit amount which is an amount of particulate matter (PM) deposited in a DPF (particulate filter) 13 provided in an exhaust passage of an engine, reaches a predetermined value X, to cause the fuel injection device (7) to perform a post-injection for injecting fuel into the combustion chamber during an expansion stroke of the engine, so as to execute a filter regeneration process of raising a temperature of exhaust gas flowing into the DPF 13 to burn the deposited PM. The exhaust gas temperature-adjusting device (33) is operable to cause the fuel injection device (7) to stop performing the post-injection in a stage where a PM burning amount which is an amount of PM burned through the filter regeneration process, is less than an initial PM deposit amount which is the PM deposit amount X at a timing of initiation of the filter regeneration process, by a predetermined amount. The particulate filter regenerating system of the present invention can adequately burn and remove PM deposited in a particulate filter, by means of a post-injection of fuel, while effectively suppressing a fuel consumption due to the post-injection.

    摘要翻译: 公开了一种微粒过滤器再生系统,其包括适于将燃料喷射到发动机主体(1)的燃烧室中的燃料喷射装置(7),以及排气温度调节装置(33),当PM沉积量 其是沉积在设置在发动机的排气通道中的DPF(微粒过滤器)13中的颗粒物质(PM)的量达到预定值X,以使燃料喷射装置(7)执行后喷射 在发动机的膨胀冲程期间将燃料喷射到燃烧室中,以便执行提高流入DPF 13的废气的温度以便燃烧沉积的PM的过滤器再生过程。 废气温度调节装置(33)可操作以使得燃料喷射装置(7)在通过过滤器再生处理燃烧的PM的PM燃烧量是PM燃烧量的阶段中停止执行后喷射 小于在过滤器再生处理开始时刻的PM沉积量X的初始PM沉积量预定量。 本发明的颗粒过滤器再生系统可以通过后喷射燃料来充分地燃烧和去除沉积在微粒过滤器中的PM,同时有效地抑制由于后喷射引起的燃料消耗。

    SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR
    8.
    发明申请
    SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR 审中-公开
    基板加工装置及制造半导体的方法

    公开(公告)号:US20100227478A1

    公开(公告)日:2010-09-09

    申请号:US12716837

    申请日:2010-03-03

    申请人: Koichiro HARADA

    发明人: Koichiro HARADA

    CPC分类号: H01L21/67109 H01L21/67115

    摘要: Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device which can prevent a sealing member from being deteriorated due to a thermal radiation from a heater. The substrate processing apparatus includes a processing container, a substrate stage installed in the processing container, on which a substrate is placed, a heater installed in the substrate stage and configured to heat the substrate, a thermal radiation attenuator adjacent to the processing container, and a gas supply pipe connected to a gas inlet part with a sealing member interposed therebetween and configured to supply a processing gas to an inside of the processing container, wherein the thermal radiation attenuator is installed on a line connecting the heater and the sealing member.

    摘要翻译: 提供了一种衬底处理设备和制造半导体器件的方法,该半导体器件能够防止密封构件由于来自加热器的热辐射而劣化。 基板处理装置包括处理容器,安装在其上放置基板的处理容器中的基板台,安装在基板台中的加热器,用于加热基板的加热器,与处理容器相邻的热辐射衰减器,以及 气体供给管,其连接到气体入口部分,其间具有密封构件,并且构造成将处理气体供应到处理容器的内部,其中所述热辐射衰减器安装在连接所述加热器和所述密封构件的线上。