Aluminum-containing member and a method for producing such an aluminum-containing member
    1.
    发明授权

    公开(公告)号:US06364965B1

    公开(公告)日:2002-04-02

    申请号:US09497892

    申请日:2000-02-04

    IPC分类号: C23C824

    CPC分类号: C23C12/02 C23C8/02 C23C8/24

    摘要: A method for producing an aluminum-containing member, comprising the steps of heating a substrate containing at least metallic aluminum in vacuum of not more than 10−3 torrs, and continuing with the heating step, forming a nitride in a surface portion of the substrate by heating/nitriding the substrate in a nitrogen atmosphere continuously to the above heating step.

    摘要翻译: 一种含铝构件的制造方法,其特征在于,包括以下步骤:将真空中含有至少金属铝的基材加热至10 -3乇以下,继续加热工序,在所述基材的表面部分形成氮化物 通过在氮气气氛中连续加热/氮化基板至上述加热步骤。

    Surface nitriding member
    2.
    发明授权
    Surface nitriding member 失效
    表面氮化构件

    公开(公告)号:US06468366B1

    公开(公告)日:2002-10-22

    申请号:US09568500

    申请日:2000-05-11

    IPC分类号: C23C800

    CPC分类号: C23C8/04 C23C8/24

    摘要: A nitriding portion made of aluminum nitride as a main ingredient having a high concentration region in which an element mentioned below is existent at a high concentration and a low concentration region in which the element existent at a low concentration is formed on a surface of a substrate made of aluminum, aluminum alloy or aluminum-containing composite material by existing at least one element other than aluminum selected from Group 2A, Group 3A, Group 4A and Group 4B in Periodic Table in a stepwise manner. Thereby, it is possible to form the nitriding portion which shows a high corrosion resistance property with respect to a halogen-based corrosive gas.

    摘要翻译: 在高浓度下存在具有高浓度区域的高浓度区域的氮化铝的氮化部分,在基板的表面上形成有以低浓度存在的元素的低浓度区域 由铝,铝合金或含铝复合材料制成,通过逐步地在元素周期表中存在选自元素2A,组3A,组4A和组4B中的铝以外的至少一种元素。 由此,能够形成相对于卤素系腐蚀性气体显示出高耐腐蚀性的氮化部。

    Aluminum nitride sintered bodies and semiconductor-producing members including same
    5.
    发明授权
    Aluminum nitride sintered bodies and semiconductor-producing members including same 有权
    氮化铝烧结体及包括其的半导体制造部件

    公开(公告)号:US06486085B1

    公开(公告)日:2002-11-26

    申请号:US09659529

    申请日:2000-09-12

    IPC分类号: C04B35581

    摘要: An aluminum nitride sintered body is provided. The aluminum nitride has a polycrystalline structure of aluminum nitride crystals having an average particle diameter in a range of 5 &mgr;m to 20 &mgr;m and cerium in a range of 0.01 wt % 1.0 wt %, when calculated as an oxide thereof. The aluminum nitride sintered body has a room temperature volume resistivity in a range of 1×108 &OHgr;·cm to 1×1012 &OHgr;·cm under the application of 500 V/mm, and a value of a in the I-V relational equation, I=kV&agr;, is in a range of 1.0 to 1.5, V being a voltage in a range of 100 V/mm to 1000 V/mm, I being a leak current when V is applied to said aluminum nitride body, k being a constant, and &agr; being a non-linear coefficient.

    摘要翻译: 提供了一种氮化铝烧结体。 当以其氧化物计算时,氮化铝具有平均粒径在5μm至20μm的范围内的氮化铝晶体的多晶结构,以及在0.01wt%为1.0wt%的范围内的铈。 在500V / mm的应用下,氮化铝烧结体的室温体积电阻率为1×10 8Ω·cm〜1×10 12Ω·cm,IV值关系式I = kValpha为 范围为1.0至1.5,V为100V / mm至1000V / mm范围内的电压,I为当施加到所述氮化铝体时的漏电流,k为常数,α为非 线性系数。

    Member for semiconductor manufacturing apparatus
    6.
    发明授权
    Member for semiconductor manufacturing apparatus 有权
    半导体制造设备会员

    公开(公告)号:US08908349B2

    公开(公告)日:2014-12-09

    申请号:US13420810

    申请日:2012-03-15

    IPC分类号: H02N13/00 H01L21/683

    CPC分类号: H01L21/6833

    摘要: An electrostatic chuck is provided with a ceramic substrate 12 in which an electrode 14 is embedded, an electrode terminal 14a exposed at the bottom of a concave portion 16 disposed on the back surface of the ceramic substrate 12, a power feed member 20 to supply an electric power to the electrode 14, and a joining layer 22 to connect this power feed member 20 to the ceramic substrate 12. The joining layer 22 is formed by using a AuGe based alloy, a AuSn based alloy, or a AuSi based alloy. The ceramic substrate 12 and the power feed member 20 are selected in such a way that the thermal expansion coefficient difference D calculated by subtracting the thermal expansion coefficient of the ceramic substrate 12 from the thermal expansion coefficient of the power feed member 20 satisfies −2.2≦D≦6 (unit: ppm/K).

    摘要翻译: 静电吸盘设置有嵌入电极14的陶瓷基板12,暴露在设置在陶瓷基板12的背面的凹部16的底部的电极端子14a,供电部件20 电极14的电力,以及将该供电部件20连接到陶瓷基板12的接合层22.接合层22通过使用AuGe系合金,AuSn系合金或AuSi系合金形成。 选择陶瓷基板12和供电部件20,使得通过从供电部件20的热膨胀系数减去陶瓷基板12的热膨胀系数而计算的热膨胀系数差D满足-2.2< ; D≦̸ 6(单位:ppm / K)。

    Sintered ceramic body, manufacturing method thereof, and ceramic structure
    7.
    发明授权
    Sintered ceramic body, manufacturing method thereof, and ceramic structure 有权
    烧结陶瓷体及其制造方法和陶瓷结构体

    公开(公告)号:US08603625B2

    公开(公告)日:2013-12-10

    申请号:US12913107

    申请日:2010-10-27

    IPC分类号: B32B5/16 C04B35/64

    摘要: A manufacturing method of a sintered ceramic body mixes barium silicate with aluminum oxide, a glass material, and an additive oxide to prepare a material mixture, molds the material mixture and fires the molded object. The barium silicate is monoclinic and has an average particle diameter in a range of 0.3 μm to 1 μm and a specific surface area in a range of 5 m2/g to 20 m2/g. The aluminum oxide has an average particle diameter in a range of 0.4 μm to 10 μm, a specific surface area in a range of 0.8 m2/g to 8 m2/g. A volume ratio of the aluminum oxide to the barium silicate is in a range of 10% by volume to 25% by volume.

    摘要翻译: 烧结陶瓷体的制造方法将硅酸钡与氧化铝,玻璃材料和添加剂氧化物混合以制备材料混合物,模塑材料混合物并使其成型。 硅酸钡为单斜晶系,平均粒径为0.3μm〜1μm,比表面积为5m 2 / g〜20m 2 / g。 氧化铝的平均粒径为0.4μm〜10μm,比表面积为0.8m 2 / g〜8m 2 / g。 氧化铝与硅酸钡的体积比在10体积%〜25体积%的范围内。