公开(公告)号：US20060228899A1

公开(公告)日：2006-10-12

申请号：US11441237

申请日：2006-05-26

申请人： Hiroyuki Nansei ,  Manabu Nakamura ,  Kentaro Sera ,  Masahiko Higashi ,  Yukihiro Utsuno ,  Hideo Takagi ,  Tatsuya Kajita

发明人： Hiroyuki Nansei ,  Manabu Nakamura ,  Kentaro Sera ,  Masahiko Higashi ,  Yukihiro Utsuno ,  Hideo Takagi ,  Tatsuya Kajita

IPC分类号： H01L21/31 ,  H01L21/336

CPC分类号： H01L21/0234 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02326 ,  H01L21/02332 ,  H01L21/3145 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11568 ,  Y10S438/954

摘要： After a lower silicon oxide film is formed on a silicon region, a silicon film is formed on the lower silicon oxide film by, for example, a thermal CVD method. Subsequently, the silicon film is completely nitrided by a plasma nitriding method to be replaced by a silicon nitride film. Subsequently, a surface layer of the silicon nitride film is oxidized by a plasma oxidizing method to be replaced by an upper silicon oxide film. An ONO film as a multilayered insulating film composed of the lower silicon oxide film, the silicon nitride film, and the upper silicon oxide film is formed.

公开(公告)号：US07098147B2

公开(公告)日：2006-08-29

申请号：US10643967

申请日：2003-08-20

申请人： Hiroyuki Nansei ,  Manabu Nakamura ,  Kentaro Sera ,  Masahiko Higashi ,  Yukihiro Utsuno ,  Hideo Takagi ,  Tatsuya Kajita

发明人： Hiroyuki Nansei ,  Manabu Nakamura ,  Kentaro Sera ,  Masahiko Higashi ,  Yukihiro Utsuno ,  Hideo Takagi ,  Tatsuya Kajita

IPC分类号： H01L21/31

CPC分类号： H01L27/11568 ,  H01L21/3145 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11546 ,  Y10S438/954

摘要： After a lower silicon oxide film is formed on a silicon region, a silicon film is formed on the lower silicon oxide film by, for example, a thermal CVD method. Subsequently, the silicon film is completely nitrided by a plasma nitriding method to be replaced by a silicon nitride film. Subsequently, a surface layer of the silicon nitride film is oxidized by a plasma oxidizing method to be replaced by an upper silicon oxide film. An ONO film as a multilayered insulating film composed of the lower silicon oxide film, the silicon nitride film, and the upper silicon oxide film is formed.

摘要翻译： 在硅区域上形成下部氧化硅膜之后，通过例如热CVD法在下部氧化硅膜上形成硅膜。 随后，通过等离子体氮化方法将硅膜完全氮化，由氮化硅膜代替。 随后，通过等离子体氧化方法氧化氮化硅膜的表面层，以被上部氧化硅膜代替。 形成作为由下部氧化硅膜，氮化硅膜和上部氧化硅膜构成的多层绝缘膜的ONO膜。

公开(公告)号：US20090085213A1

公开(公告)日：2009-04-02

申请号：US12199690

申请日：2008-08-27

申请人： Masahiko HIGASHI ,  Hiroyuki Nansei

发明人： Masahiko HIGASHI ,  Hiroyuki Nansei

IPC分类号： H01L23/52

CPC分类号： H01L27/105 ,  H01L21/26586 ,  H01L27/11534 ,  H01L27/11568

摘要： A semiconductor memory device employs a SONOS type memory architecture and includes a bit line diffusion layer in a shallow trench groove in which a conductive film is buried. This makes it possible to decrease the resistivity of the bit line diffusion layer without enlarging the area on the main surface of the semiconductor substrate, and to fabricate the semiconductor memory device having stable electric characteristics without enlarging the cell area. The bit line is formed by implanting ions into the sidewall of Si3N4.

摘要翻译： 半导体存储器件采用SONOS型存储器架构，并且在其中埋入导电膜的浅沟槽沟槽中包括位线扩散层。 这使得可以在不扩大半导体衬底的主表面上的面积的情况下降低位线扩散层的电阻率，并且制造具有稳定的电特性的半导体存储器件而不扩大单元面积。 位线通过将离子注入到Si 3 N 4的侧壁中而形成。

公开(公告)号：US20080265309A1

公开(公告)日：2008-10-30

申请号：US12213542

申请日：2008-06-20

申请人： Masahiko Higashi ,  Manabu Nakamura ,  Kentaro Sera ,  Hiroyuki Nansei ,  Yukihiro Utsuno ,  Hideo Takagi ,  Tatsuya Kajita

发明人： Masahiko Higashi ,  Manabu Nakamura ,  Kentaro Sera ,  Hiroyuki Nansei ,  Yukihiro Utsuno ,  Hideo Takagi ,  Tatsuya Kajita

IPC分类号： H01L29/792 ,  H01L21/336

CPC分类号： H01L21/0217 ,  H01L21/022 ,  H01L21/02252 ,  H01L21/31155 ,  H01L21/3185 ,  H01L27/105 ,  H01L27/11568 ,  H01L27/11573 ,  H01L29/40117 ,  H01L29/66833

摘要： After an ONO film in which a silicon nitride film (22) formed by a plasma nitriding method using a plasma processor having a radial line slot antenna is sandwiched by silicon oxide films (21), (23), a bit line diffusion layer (17) is formed in a memory cell array region (11) by an ion implantation as a resist pattern (16) taken as a mask, then lattice defects are given to the silicon nitride film (22) by a further ion implantation. Accordingly, a highly reliable semiconductor memory device can be realized, in which a high quality nitride film is formed in a low temperature condition, in addition, the nitride film can be used as a charge trap film having a charge capture function sufficiently adaptable for a miniaturization and a high integration which are recent demands.

摘要翻译： 在通过使用具有径向线槽天线的等离子体处理器通过等离子体氮化法形成的氮化硅膜（22）夹在氧化硅膜（21），（23）上的ONO膜之后，位线扩散层（17） ）通过离子注入形成在存储单元阵列区域（11）中，作为抗蚀剂图案（16）作为掩模，然后通过进一步的离子注入向氮化硅膜（22）提供晶格缺陷。 因此，可以实现在低温条件下形成高质量氮化物膜的高度可靠的半导体存储器件，此外，氮化物膜可以用作具有充分适应于 小型化和高度一体化是最近的需求。

公开(公告)号：US07410857B2

公开(公告)日：2008-08-12

申请号：US11878296

申请日：2007-07-23

申请人： Masahiko Higashi ,  Manabu Nakamura ,  Kentaro Sera ,  Hiroyuki Nansei ,  Yukihiro Utsuno ,  Hideo Takagi ,  Tatsuya Kajita

发明人： Masahiko Higashi ,  Manabu Nakamura ,  Kentaro Sera ,  Hiroyuki Nansei ,  Yukihiro Utsuno ,  Hideo Takagi ,  Tatsuya Kajita

IPC分类号： H01L21/8238

CPC分类号： H01L21/0217 ,  H01L21/022 ,  H01L21/02252 ,  H01L21/28282 ,  H01L21/31155 ,  H01L21/3185 ,  H01L27/105 ,  H01L27/11568 ,  H01L27/11573 ,  H01L29/66833

摘要： After an ONO film in which a silicon nitride film (22) formed by a plasma nitriding method using a plasma processor having a radial line slot antenna is sandwiched by silicon oxide films (21), (23), a bit line diffusion layer (17) is formed in a memory cell array region (11) by an ion implantation as a resist pattern (16) taken as a mask, then lattice defects are given to the silicon nitride film (22) by a further ion implantation. Accordingly, a highly reliable semiconductor memory device can be realized, in which a high quality nitride film is formed in a low temperature condition, in addition, the nitride film can be used as a charge trap film having a charge capture function sufficiently adaptable for a miniaturization and a high integration which are recent demands.

公开(公告)号：US20050224866A1

公开(公告)日：2005-10-13

申请号：US11065305

申请日：2005-02-25

申请人： Masahiko Higashi ,  Manabu Nakamura ,  Kentaro Sera ,  Hiroyuki Nansei ,  Yukihiro Utsuno ,  Hideo Takagi ,  Tatsuya Kajita

发明人： Masahiko Higashi ,  Manabu Nakamura ,  Kentaro Sera ,  Hiroyuki Nansei ,  Yukihiro Utsuno ,  Hideo Takagi ,  Tatsuya Kajita

IPC分类号： H01L21/8247 ,  H01L21/28 ,  H01L21/3115 ,  H01L21/318 ,  H01L21/336 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L21/0217 ,  H01L21/022 ,  H01L21/02252 ,  H01L21/28282 ,  H01L21/31155 ,  H01L21/3185 ,  H01L27/105 ,  H01L27/11568 ,  H01L27/11573 ,  H01L29/66833

摘要： After an ONO film in which a silicon nitride film (22) formed by a plasma nitriding method using a plasma processor having a radial line slot antenna is sandwiched by silicon oxide films (21), (23), a bit line diffusion layer (17) is formed in a memory cell array region (11) by an ion implantation as a resist pattern (16) taken as a mask, then lattice defects are given to the silicon nitride film (22) by a further ion implantation. Accordingly, a highly reliable semiconductor memory device can be realized, in which a high quality nitride film is formed in a low temperature condition, in addition, the nitride film can be used as a charge trap film having a charge capture function sufficiently adaptable for a miniaturization and a high integration which are recent demands.

摘要翻译： 在通过使用具有径向线槽天线的等离子体处理器通过等离子体氮化方法形成的氮化硅膜（22）夹在氧化硅膜（21），（23）上的ONO膜之后，位线扩散层（17） ）通过离子注入形成在存储单元阵列区域（11）中，作为抗蚀剂图案（16）作为掩模，然后通过进一步的离子注入向氮化硅膜（22）提供晶格缺陷。 因此，可以实现在低温条件下形成高质量氮化物膜的高度可靠的半导体存储器件，此外，氮化物膜可以用作具有充分适应于 小型化和高度一体化是最近的需求。

公开(公告)号：US20050212035A1

公开(公告)日：2005-09-29

申请号：US11065306

申请日：2005-02-25

申请人： Yukihiro Utsuno ,  Manabu Nakamura ,  Kentaro Sera ,  Masahiko Higashi ,  Hiroyuki Nansei ,  Hideo Takagi ,  Tatsuya Kajita

发明人： Yukihiro Utsuno ,  Manabu Nakamura ,  Kentaro Sera ,  Masahiko Higashi ,  Hiroyuki Nansei ,  Hideo Takagi ,  Tatsuya Kajita

IPC分类号： H01L21/28 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/51 ,  H01L29/788

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/513 ,  H01L29/518 ,  H01L29/7883

摘要： Tunnel insulating films (3) are formed in element regions demarcated by element isolation insulating films (2). Thereafter, for each memory cell, a floating gate (4) is formed, and an ONO film (5) and a control gate (6) are further formed. Next, a plasma insulating film (7) is formed on surfaces of stacked gates. The plasma insulating film is immune to plane orientation of a base film. Therefore, the entire plasma insulating film (7) has a substantially uniform thickness, and consequently, even if the maximum thickness thereof is not as large as that of a thermal oxide film, hydrogen entrance is prevented when the interlayer insulating film is thereafter formed, and electron leakage is also prevented. The reduction in thickness of this insulating film makes it possible to reduce birds' beaks, and efficiency in erase/write of data can be enhanced.

摘要翻译： 隧道绝缘膜（3）形成在由元件隔离绝缘膜（2）划分的元件区域中。 此后，对于每个存储单元，形成浮置栅极（4），并且还形成ONO膜（5）和控制栅极（6）。 接下来，在层叠栅极的表面上形成等离子体绝缘膜（7）。 等离子体绝缘膜不受基膜的平面取向的影响。 因此，整个等离子体绝缘膜（7）的厚度基本均匀，因此即使最大厚度不如热氧化膜的厚度那样大，因此当形成层间绝缘膜时，防止了氢入口， 并且也防止电子泄漏。 该绝缘膜的厚度的减小使得可以减少鸟的喙，并且可以提高擦除/写入数据的效率。

公开(公告)号：US20070262374A1

公开(公告)日：2007-11-15

申请号：US11878296

申请日：2007-07-23

申请人： Masahiko Higashi ,  Manabu Nakamura ,  Kentaro Sera ,  Hiroyuki Nansei ,  Yukihiro Utsuno ,  Hideo Takagi ,  Tatsuya Kajita

发明人： Masahiko Higashi ,  Manabu Nakamura ,  Kentaro Sera ,  Hiroyuki Nansei ,  Yukihiro Utsuno ,  Hideo Takagi ,  Tatsuya Kajita

IPC分类号： H01L29/792 ,  H01L21/336

CPC分类号： H01L21/0217 ,  H01L21/022 ,  H01L21/02252 ,  H01L21/28282 ,  H01L21/31155 ,  H01L21/3185 ,  H01L27/105 ,  H01L27/11568 ,  H01L27/11573 ,  H01L29/66833

摘要： After an ONO film in which a silicon nitride film (22) formed by a plasma nitriding method using a plasma processor having a radial line slot antenna is sandwiched by silicon oxide films (21), (23), a bit line diffusion layer (17) is formed in a memory cell array region (11) by an ion implantation as a resist pattern (16) taken as a mask, then lattice defects are given to the silicon nitride film (22) by a further ion implantation. Accordingly, a highly reliable semiconductor memory device can be realized, in which a high quality nitride film is formed in a low temperature condition, in addition, the nitride film can be used as a charge trap film having a charge capture function sufficiently adaptable for a miniaturization and a high integration which are recent demands.

公开(公告)号：US07479427B2

公开(公告)日：2009-01-20

申请号：US11237591

申请日：2005-09-27

申请人： Masahiko Higashi ,  Hiroyuki Nansei

发明人： Masahiko Higashi ,  Hiroyuki Nansei

IPC分类号： H01L21/8247

CPC分类号： H01L27/105 ,  H01L21/26586 ,  H01L27/11534 ,  H01L27/11568

摘要： A semiconductor memory device employs a SONOS type memory architecture and includes a bit line diffusion layer in a shallow trench groove in which a conductive film is buried. This makes it possible to decrease the resistivity of the bit line diffusion layer without enlarging the area on the main surface of the semiconductor substrate, and to fabricate the semiconductor memory device having stable electric characteristics without enlarging the cell area. The bit line is formed by implanting ions into the sidewall of Si3N4.

摘要翻译： 半导体存储器件采用SONOS型存储器架构，并且在其中埋入导电膜的浅沟槽沟槽中包括位线扩散层。 这使得可以在不扩大半导体衬底的主表面上的面积的情况下降低位线扩散层的电阻率，并且制造具有稳定的电特性的半导体存储器件而不扩大单元面积。 位线通过将离子注入到Si 3 N 4的侧壁中而形成。

公开(公告)号：US07253046B2

公开(公告)日：2007-08-07

申请号：US11065305

申请日：2005-02-25

申请人： Masahiko Higashi ,  Manabu Nakamura ,  Kentaro Sera ,  Hiroyuki Nansei ,  Yukihiro Utsuno ,  Hideo Takagi ,  Tatsuya Kajita

发明人： Masahiko Higashi ,  Manabu Nakamura ,  Kentaro Sera ,  Hiroyuki Nansei ,  Yukihiro Utsuno ,  Hideo Takagi ,  Tatsuya Kajita

IPC分类号： H01L21/8238

CPC分类号： H01L21/0217 ,  H01L21/022 ,  H01L21/02252 ,  H01L21/28282 ,  H01L21/31155 ,  H01L21/3185 ,  H01L27/105 ,  H01L27/11568 ,  H01L27/11573 ,  H01L29/66833

摘要： After an ONO film in which a silicon nitride film (22) formed by a plasma nitriding method using a plasma processor having a radial line slot antenna is sandwiched by silicon oxide films (21), (23), a bit line diffusion layer (17) is formed in a memory cell array region (11) by an ion implantation as a resist pattern (16) taken as a mask, then lattice defects are given to the silicon nitride film (22) by a further ion implantation. Accordingly, a highly reliable semiconductor memory device can be realized, in which a high quality nitride film is formed in a low temperature condition, in addition, the nitride film can be used as a charge trap film having a charge capture function sufficiently adaptable for a miniaturization and a high integration which are recent demands.

摘要翻译： 在通过使用具有径向线槽天线的等离子体处理器通过等离子体氮化方法形成的氮化硅膜（22）夹在氧化硅膜（21），（23）上的ONO膜之后，位线扩散层（17） ）通过离子注入形成在存储单元阵列区域（11）中，作为抗蚀剂图案（16）作为掩模，然后通过进一步的离子注入向氮化硅膜（22）提供晶格缺陷。 因此，可以实现在低温条件下形成高质量氮化物膜的高度可靠的半导体存储器件，此外，氮化物膜可以用作具有充分适应于 小型化和高度一体化是最近的需求。