公开(公告)号：US20050112386A1

公开(公告)日：2005-05-26

申请号：US10991385

申请日：2004-11-19

申请人： Masahiro Akiyama ,  Manabu Sekiguchi ,  Seitaro Hattori ,  Terukazu Kokubo

发明人： Masahiro Akiyama ,  Manabu Sekiguchi ,  Seitaro Hattori ,  Terukazu Kokubo

IPC分类号： C08G77/08 ,  B05D7/24 ,  C08G77/50 ,  C09D5/25 ,  C09D7/12 ,  C09D183/02 ,  C09D183/04 ,  C09D183/14 ,  H01L21/312 ,  B32B9/04 ,  C08L83/04

CPC分类号： C09D183/04 ,  C09D183/14 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  Y10T428/31663

摘要： A composition for film formation having low dielectric constant, excellent adhesion to a silica film and excellent adhesion to an organic film, a method for preparing the composition, and a method for forming a silica film using the composition are disclosed. The composition for film formation comprises (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one specific silane compound, and (B) an oxygen-containing organic solvent, wherein the content of the product of hydrolysis and condensation (A) is less than 5% by weight based on the weight of the composition. The composition can form a silica film having improved dielectric constant characteristics and storage stability, and also improved adhesion to other silica films and organic films.

摘要翻译： 公开了具有低介电常数的组合物，对二氧化硅膜的优异粘附性和对有机膜的优异粘附性，该组合物的制备方法和使用该组合物形成二氧化硅膜的方法。 用于成膜的组合物包含（A）通过水解和缩合至少一种特定的硅烷化合物获得的水解和缩合产物，和（B）含氧有机溶剂，其中水解和缩合产物的含量（A ）基于组合物的重量小于5重量％。 该组合物可以形成具有改善的介电常数特性和储存稳定性的二氧化硅膜，并且还改善了与其它二氧化硅膜和有机膜的粘附性。

公开(公告)号：US20060216531A1

公开(公告)日：2006-09-28

申请号：US11410895

申请日：2006-04-26

申请人： Masahiro Akiyama ,  Seitaro Hattori ,  Takahiko Kurosawa ,  Manabu Sekiguchi ,  Terukazu Kokubo ,  Michihiro Mita ,  Tatsuya Yamanaka ,  Masaki Obi

发明人： Masahiro Akiyama ,  Seitaro Hattori ,  Takahiko Kurosawa ,  Manabu Sekiguchi ,  Terukazu Kokubo ,  Michihiro Mita ,  Tatsuya Yamanaka ,  Masaki Obi

IPC分类号： B32B27/00 ,  B32B9/04 ,  C08L83/04

CPC分类号： H01L21/02118 ,  C09D183/14 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  Y10T428/1014 ,  Y10T428/31663

摘要： A laminate including: a first silica-based film; a second silica-based film; and an organic film, wherein the second silica-based film includes an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond. A method of forming the laminate includes: forming a first coating for a first silica-based film on a substrate; forming a second coating for a second silica-based film on the first coating, the second coating including an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond; forming a third coating for an organic film on the second coating; and curing a multilayer film including the first to third coatings.

公开(公告)号：US07556860B2

公开(公告)日：2009-07-07

申请号：US11410895

申请日：2006-04-26

申请人： Masahiro Akiyama ,  Seitaro Hattori ,  Takahiko Kurosawa ,  Manabu Sekiguchi ,  Terukazu Kokubo ,  Michihiro Mita ,  Tatsuya Yamanaka ,  Masaki Obi

发明人： Masahiro Akiyama ,  Seitaro Hattori ,  Takahiko Kurosawa ,  Manabu Sekiguchi ,  Terukazu Kokubo ,  Michihiro Mita ,  Tatsuya Yamanaka ,  Masaki Obi

IPC分类号： B32B9/04 ,  B32B27/00 ,  C08L83/04

CPC分类号： H01L21/02118 ,  C09D183/14 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  Y10T428/1014 ,  Y10T428/31663

摘要： A laminate including: a first silica-based film; a second silica-based film; and an organic film, wherein the second silica-based film includes an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond. A method of forming the laminate includes: forming a first coating for a first silica-based film on a substrate; forming a second coating for a second silica-based film on the first coating, the second coating including an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond; forming a third coating for an organic film on the second coating; and curing a multilayer film including the first to third coatings.

摘要翻译： 一种层压体，包括：第一二氧化硅基膜; 第二硅胶膜; 和有机膜，其中所述第二二氧化硅基膜包括含有碳 - 碳双键或碳 - 碳三键的有机基团。 形成层压体的方法包括：在基材上形成用于第一二氧化硅基膜的第一涂层; 在第一涂层上形成第二二氧化硅基膜的第二涂层，第二涂层包括含有碳 - 碳双键或碳 - 碳三键的有机基团; 在第二涂层上形成用于有机膜的第三涂层; 以及固化包括第一至第三涂层的多层膜。

公开(公告)号：US20100140754A1

公开(公告)日：2010-06-10

申请号：US12377420

申请日：2007-08-14

申请人： Masahiro Akiyama ,  Hisashi Nakagawa ,  Terukazu Kokubo

发明人： Masahiro Akiyama ,  Hisashi Nakagawa ,  Terukazu Kokubo

IPC分类号： H01L29/06 ,  H01L21/31 ,  C07F7/08

CPC分类号： C23C16/401 ,  C09D183/14 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31633

摘要： Disclosed is a silicon-containing film-forming material which contains an organosilane compound represented by the following general formula (1). (In the formula, R1-R4 may be the same or different and represent a hydrogen atom, an alkyl group having 1-4 carbon atoms, a vinyl group or a phenyl group; R5 represents an alkyl group having 1-4 carbon atoms, an acetyl group or a phenyl group; n represents an integer of 1-3; and m represents an integer of 1-2.)

摘要翻译： 公开了含有由以下通式（1）表示的有机硅烷化合物的含硅成膜材料。 （式中，R 1 -R 4可以相同或不同，表示氢原子，具有1-4个碳原子的烷基，乙烯基或苯基; R 5表示具有1-4个碳原子的烷基， 乙酰基或苯基; n表示1-3的整数，m表示1-2的整数。）

公开(公告)号：US20100007025A1

公开(公告)日：2010-01-14

申请号：US12278224

申请日：2007-01-31

申请人： Hisashi Nakagawa ,  Tatsuya Yamanaka ,  Masahiro Akiyama ,  Terukazu Kokubo ,  Youhei Nobe

发明人： Hisashi Nakagawa ,  Tatsuya Yamanaka ,  Masahiro Akiyama ,  Terukazu Kokubo ,  Youhei Nobe

IPC分类号： H01L21/31 ,  H01L23/48 ,  C08G77/04

CPC分类号： C09D183/04 ,  C08G77/60 ,  C09D183/14 ,  H01B3/46 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/3122 ,  H01L21/316 ,  C08L83/00

摘要： An insulating-film-forming composition for a semiconductor device comprising an organic silica sol with a carbon atom content of 11 to 17 atom % and an organic solvent is disclosed. The organic silica sol comprises a hydrolysis-condensation product P1 and a hydrolysis-condensation product P2. The hydrolysis-condensation product P1 is obtained by hydrolyzing and condensing (A) a silane monomer comprising a hydrolyzable group and (B) a polycarbosilane comprising a hydrolyzable group in the presence of (C) a basic catalyst, and the hydrolysis-condensation product P2 is obtained by hydrolyzing and condensing (D) a silane monomer comprising a hydrolyzable group.

摘要翻译： 公开了一种用于半导体器件的绝缘膜形成组合物，其包含碳原子数为11至17原子％的有机硅溶胶和有机溶剂。 有机硅溶胶包括水解缩合产物P1和水解缩合产物P2。 水解缩合产物P1是通过在（C）碱性催化剂存在下（A）包含可水解基团的硅烷单体和（B）包含可水解基团的聚碳硅烷（A）和水解缩合产物P2 是通过水解和冷凝（D）包含可水解基团的硅烷单体获得的。

公开(公告)号：US07893538B2

公开(公告)日：2011-02-22

申请号：US12278224

申请日：2007-01-31

申请人： Hisashi Nakagawa ,  Tatsuya Yamanaka ,  Masahiro Akiyama ,  Terukazu Kokubo ,  Youhei Nobe

发明人： Hisashi Nakagawa ,  Tatsuya Yamanaka ,  Masahiro Akiyama ,  Terukazu Kokubo ,  Youhei Nobe

IPC分类号： H01L23/48

CPC分类号： C09D183/04 ,  C08G77/60 ,  C09D183/14 ,  H01B3/46 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/3122 ,  H01L21/316 ,  C08L83/00

摘要： An insulating-film-forming composition for a semiconductor device comprising an organic silica sol with a carbon atom content of 11 to 17 atom % and an organic solvent is disclosed. The organic silica sol comprises a hydrolysis-condensation product P1 and a hydrolysis-condensation product P2. The hydrolysis-condensation product P1 is obtained by hydrolyzing and condensing (A) a silane monomer comprising a hydrolyzable group and (B) a polycarbosilane comprising a hydrolyzable group in the presence of (C) a basic catalyst, and the hydrolysis-condensation product P2 is obtained by hydrolyzing and condensing (D) a silane monomer comprising a hydrolyzable group.

摘要翻译： 公开了一种用于半导体器件的绝缘膜形成组合物，其包含碳原子数为11至17原子％的有机硅溶胶和有机溶剂。 有机硅溶胶包括水解缩合产物P1和水解缩合产物P2。 水解缩合产物P1是通过在（C）碱性催化剂存在下（A）包含可水解基团的硅烷单体和（B）包含可水解基团的聚碳硅烷（A）和水解缩合产物P2 是通过水解和冷凝（D）包含可水解基团的硅烷单体获得的。

公开(公告)号：US20060024980A1

公开(公告)日：2006-02-02

申请号：US11184964

申请日：2005-07-20

申请人： Hajime Tsuchiya ,  Seitaro Hattori ,  Masahiro Akiyama ,  Atsushi Shiota

发明人： Hajime Tsuchiya ,  Seitaro Hattori ,  Masahiro Akiyama ,  Atsushi Shiota

IPC分类号： H01L21/31

CPC分类号： H01L21/02126 ,  C09D183/10 ,  G03F7/0757 ,  H01L21/02348 ,  H01L21/3121 ,  H01L21/316

摘要： A method of forming a silica-based film includes: applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet radiation, to a substrate to form a coating; heating the coating; and applying heat and ultraviolet radiation to the coating to effect a curing treatment. The composition includes: a hydrolysis-condensation product produced by hydrolysis and condensation of at least one silane compound selected from the group consisting of compounds shown by the following general formula (A), and at least one silane compound selected from the group consisting of compounds shown by the following general formula (B) and compounds shown by the following general formula (C); and an organic solvent,

摘要翻译： 形成二氧化硅基膜的方法包括：将通过使用热和紫外线辐射固化的用于形成用于半导体器件的绝缘膜的组合物施加到基底以形成涂层; 加热涂层; 并向涂层施加热和紫外线辐射以进行固化处理。 该组合物包括：通过水解和缩合选自由以下通式（A）表示的化合物组成的组中的至少一种硅烷化合物和至少一种选自化合物的硅烷化合物产生的水解缩合产物 由以下通式（B）表示的化合物和由以下通式（C）表示的化合物： 和有机溶剂，

公开(公告)号：US07462678B2

公开(公告)日：2008-12-09

申请号：US10947253

申请日：2004-09-23

申请人： Masahiro Akiyama ,  Seitaro Hattori ,  Masaki Obi ,  Koichi Hasegawa

发明人： Masahiro Akiyama ,  Seitaro Hattori ,  Masaki Obi ,  Koichi Hasegawa

IPC分类号： C08G77/08

CPC分类号： C09D183/14 ,  C09D183/04 ,  H01L21/02126 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/3122 ,  H01L21/31695 ,  Y10T428/31663

摘要： A process for producing a film forming composition, the process including hydrolyzing and condensing: (A) at least one silane compound selected from a compound (A-1) shown by the following general formula (1), a compound (A-2) shown by the following general formula (2), and a compound (A-3) shown by the following general formula (3), RaSi(OR1)4-a  (1) Si(OR2)4  (2) R3b(R4O)3-bSi—(R7)d—Si(OR5)3-cR6c  (3); and (B) a cyclic silane compound shown by the following general formula (4):

摘要翻译： 一种制备成膜组合物的方法，该方法包括水解和缩合：（A）至少一种选自以下通式（1）所示的化合物（A-1）的硅烷化合物，化合物（A-2） 由下述通式（2）表示的化合物（A-3）和下述通式（3）所示的化合物（A-3），<？在线式说明=“在线式”末端=“铅” RaSi（OR1）4-a（1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end = 引线“→Si（OR2）4（2）<？in-line-formula description =”In-line Formulas“end =”tail“？> <？in-line-formula description =”In-line Formulas“end =“lead”→R3b（R4O）3-bSi-（R7）d-Si（OR5）3-cR6c（3）; （B）由以下通式（4）表示的环状硅烷化合物：（A）

公开(公告)号：US07291567B2

公开(公告)日：2007-11-06

申请号：US11184964

申请日：2005-07-20

申请人： Hajime Tsuchiya ,  Seitaro Hattori ,  Masahiro Akiyama ,  Atsushi Shiota

发明人： Hajime Tsuchiya ,  Seitaro Hattori ,  Masahiro Akiyama ,  Atsushi Shiota

IPC分类号： H01L21/31

CPC分类号： H01L21/02126 ,  C09D183/10 ,  G03F7/0757 ,  H01L21/02348 ,  H01L21/3121 ,  H01L21/316

摘要： A method of forming a silica-based film includes:applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet radiation, to a substrate to form a coating; heating the coating; and applying heat and ultraviolet radiation to the coating to effect a curing treatment. The composition includes: a hydrolysis-condensation product produced by hydrolysis and condensation of at least one silane compound selected from the group consisting of compounds shown by the following general formula (A), and at least one silane compound selected from the group consisting of compounds shown by the following general formula (B) and compounds shown by the following general formula (C); and an organic solvent,

摘要翻译： 形成二氧化硅基膜的方法包括：将通过使用热和紫外线辐射固化的用于形成用于半导体器件的绝缘膜的组合物施加到基底以形成涂层; 加热涂层; 并向涂层施加热和紫外线辐射以进行固化处理。 该组合物包括：通过水解和缩合选自由以下通式（A）表示的化合物组成的组中的至少一种硅烷化合物和至少一种选自化合物的硅烷化合物产生的水解缩合产物 由以下通式（B）表示的化合物和由以下通式（C）表示的化合物： 和有机溶剂，

公开(公告)号：US08017700B2

公开(公告)日：2011-09-13

申请号：US12093254

申请日：2006-10-24

申请人： Hisashi Nakagawa ,  Masahiro Akiyama ,  Tsuyoshi Furukawa ,  Naohisa Tokushige

发明人： Hisashi Nakagawa ,  Masahiro Akiyama ,  Tsuyoshi Furukawa ,  Naohisa Tokushige

IPC分类号： C08G77/12

CPC分类号： C09D183/14 ,  C08G77/50 ,  C08G77/60 ,  C09D183/16

摘要： A polycarbosilane has a main chain in which silicon atoms and carbon atoms are alternately repeated, and includes a structural unit shown by the following general formula (1), a structural unit shown by the following general formula (2), a structural unit shown by the following general formula (3), and a structural unit shown by the following general formula (4).

摘要翻译： 聚碳硅烷具有交替重复硅原子和碳原子的主链，并且包括由以下通式（1）表示的结构单元，由以下通式（2）表示的结构单元，由 下述通式（3）表示的结构单元和下述通式（4）所示的结构单元。