公开(公告)号：US20080128848A1

公开(公告)日：2008-06-05

申请号：US11944831

申请日：2007-11-26

申请人： Masami Suzuki ,  Yoshimichi Harada ,  Yoshihiro Nabe ,  Yuji Takaoka ,  Masaaki Takizawa ,  Chiaki Sakai

发明人： Masami Suzuki ,  Yoshimichi Harada ,  Yoshihiro Nabe ,  Yuji Takaoka ,  Masaaki Takizawa ,  Chiaki Sakai

IPC分类号： H01L31/0224

CPC分类号： H01L27/14618 ,  H01L23/481 ,  H01L24/02 ,  H01L27/14636 ,  H01L27/14683 ,  H01L2224/0401 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042

摘要： A solid-state imaging device includes a semiconductor substrate having a foreside provided with an imaging area and an electrode pad, the imaging area having an array of optical sensors, the electrode pad being disposed around a periphery of the imaging area; a transparent substrate joined to the foreside of the semiconductor substrate with a sealant therebetween; underside wiring that extends through the semiconductor substrate from the electrode pad to an underside of the semiconductor substrate; and a protective film composed of an inorganic insulating material and interposed between the semiconductor substrate and the sealant, the protective film covering at least the electrode pad.

摘要翻译： 固态成像装置包括具有成像区域的前侧的半导体基板和电极焊盘，所述成像区域具有光学传感器阵列，所述电极焊盘围绕所述摄像区域的周边设置; 透明基板，其与半导体基板的前端接合，在其间具有密封剂; 从所述电极焊盘延伸穿过所述半导体衬底到所述半导体衬底的下侧的下侧布线; 以及保护膜，其由无机绝缘材料构成并插入在所述半导体基板和所述密封剂之间，所述保护膜至少覆盖所述电极焊盘。

公开(公告)号：US07851880B2

公开(公告)日：2010-12-14

申请号：US11944831

申请日：2007-11-26

申请人： Masami Suzuki ,  Yoshimichi Harada ,  Yoshihiro Nabe ,  Yuji Takaoka ,  Masaaki Takizawa ,  Chiaki Sakai

发明人： Masami Suzuki ,  Yoshimichi Harada ,  Yoshihiro Nabe ,  Yuji Takaoka ,  Masaaki Takizawa ,  Chiaki Sakai

IPC分类号： H01L31/0224 ,  H01L23/48

CPC分类号： H01L27/14618 ,  H01L23/481 ,  H01L24/02 ,  H01L27/14636 ,  H01L27/14683 ,  H01L2224/0401 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042

摘要： A solid-state imaging device includes a semiconductor substrate having a foreside provided with an imaging area and an electrode pad, the imaging area having an array of optical sensors, the electrode pad being disposed around a periphery of the imaging area; a transparent substrate joined to the foreside of the semiconductor substrate with a sealant therebetween; underside wiring that extends through the semiconductor substrate from the electrode pad to an underside of the semiconductor substrate; and a protective film composed of an inorganic insulating material and interposed between the semiconductor substrate and the sealant, the protective film covering at least the electrode pad.

摘要翻译： 固态成像装置包括具有成像区域的前侧的半导体基板和电极焊盘，所述成像区域具有光学传感器阵列，所述电极焊盘围绕所述摄像区域的周边设置; 透明基板，其与半导体基板的前端接合，在其间具有密封剂; 从所述电极焊盘延伸穿过所述半导体衬底到所述半导体衬底的下侧的下侧布线; 以及保护膜，其由无机绝缘材料构成并插入在所述半导体基板和所述密封剂之间，所述保护膜至少覆盖所述电极焊盘。

公开(公告)号：US20100184246A1

公开(公告)日：2010-07-22

申请号：US12686021

申请日：2010-01-12

申请人： Chiaki Sakai

发明人： Chiaki Sakai

IPC分类号： H01L31/18

CPC分类号： H01L21/76254 ,  H01L21/265 ,  H01L21/26506 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14689 ,  H01L2221/68363

摘要： There is provided a method for manufacturing a solid-state image device which includes the steps of: forming a silicon epitaxial growth layer on a silicon substrate; forming photoelectric conversion portions, transfer gates, and a peripheral circuit portion in and/or on the silicon epitaxial growth layer and further forming a wiring layer on the silicon epitaxial growth layer; forming a split layer in the silicon substrate at a side of the silicon epitaxial growth layer; forming a support substrate on the wiring layer; peeling the silicon substrate from the split layer so as to leave a silicon layer formed of a part of the silicon substrate at a side of the support substrate; and planarizing the surface of the silicon layer.

摘要翻译： 提供了一种用于制造固态图像器件的方法，其包括以下步骤：在硅衬底上形成硅外延生长层; 在硅外延生长层中和/或内部形成光电转换部分，转移栅极和外围电路部分，并进一步在硅外延生长层上形成布线层; 在所述硅衬底中在所述硅外延生长层的一侧上形成分裂层; 在所述布线层上形成支撑基板; 从分离层剥离硅衬底，以便在支撑衬底的一侧留下由硅衬底的一部分形成的硅层; 并且平坦化硅层的表面。

公开(公告)号：US08383446B2

公开(公告)日：2013-02-26

申请号：US13586345

申请日：2012-08-15

申请人： Chiaki Sakai

发明人： Chiaki Sakai

IPC分类号： H01L31/14

CPC分类号： H04N5/369 ,  H01L27/1464 ,  H01L27/14698

摘要： A solid-state imaging device includes: a photoelectric conversion portion that receives an incident light from a back surface side of a silicon layer to perform photoelectric conversion on the incident light; and a pixel transistor portion that outputs signal charges generated in the photoelectric conversion portion towards a front surface side of the silicon layer, wherein a gettering layer having internal stress is provided on the front surface side of the silicon layer at a position to overlap the photoelectric conversion portion on a plan view layout thereof.

摘要翻译： 一种固态成像装置，包括：光电转换部，其从硅层的背面侧接收入射光，对入射光进行光电转换; 以及像素晶体管部分，其在所述光电转换部分中产生的信号电荷朝向所述硅层的前表面侧输出，其中在所述硅层的前表面侧上与所述硅层的重叠的位置处设置具有内应力的吸杂层 转换部分。

公开(公告)号：US08294185B2

公开(公告)日：2012-10-23

申请号：US12658714

申请日：2010-02-12

申请人： Chiaki Sakai

发明人： Chiaki Sakai

IPC分类号： H01L21/8238

CPC分类号： H04N5/369 ,  H01L27/1464 ,  H01L27/14698

摘要： A solid-state imaging device includes: a photoelectric conversion portion that receives an incident light from a back surface side of a silicon layer to perform photoelectric conversion on the incident light; and a pixel transistor portion that outputs signal charges generated in the photoelectric conversion portion towards a front surface side of the silicon layer, wherein a gettering layer having internal stress is provided on the front surface side of the silicon layer at a position to overlap the photoelectric conversion portion on a plan view layout thereof.

摘要翻译： 一种固态成像装置，包括：光电转换部，其从硅层的背面侧接收入射光，对入射光进行光电转换; 以及像素晶体管部分，其在所述光电转换部分中产生的信号电荷朝向所述硅层的前表面侧输出，其中在所述硅层的前表面侧上与所述硅层的重叠的位置处设置具有内应力的吸杂层 转换部分。

公开(公告)号：US5162892A

公开(公告)日：1992-11-10

申请号：US703057

申请日：1991-05-17

申请人： Hisao Hayashi ,  Hisayoshi Yamoto ,  Chiaki Sakai

发明人： Hisao Hayashi ,  Hisayoshi Yamoto ,  Chiaki Sakai

IPC分类号： H01L21/30 ,  H01L21/318 ,  H01L21/84 ,  H01L23/29 ,  H01L27/06 ,  H01L29/04 ,  H01L29/786

CPC分类号： H01L23/291 ,  H01L21/3003 ,  H01L21/3185 ,  H01L21/84 ,  H01L27/0688 ,  H01L29/04 ,  H01L29/78675 ,  H01L2924/0002 ,  H01L2924/13091

摘要： A thin film semiconductor device with a polycrystalline silicon film forming an active channel region, a source region and a drain region, is encapsulated in a passivation layer which also serves as a source of free hydrogen. Migration of hydrogen into the active region improves the effective carrier mobility, the threshold voltage and the gate voltage of the device by reducing carrier trap density thereof. The passivation layer is activated during annealing to drive hydrogen through porous or transmissive layers of the device to the active region. Effective mobilities of up to 100 cm.sup.2 /V sec can be achieved in the preferred construction. The semicondcutor device can be fabricated in the form of IC chips.

摘要翻译： 具有形成有源沟道区，源极区和漏极区的多晶硅膜的薄膜半导体器件被封装在还用作游离氢源的钝化层中。 通过降低其载流子阱密度，氢向有源区的迁移改善了器件的有效载流子迁移率，阈值电压和栅极电压。 钝化层在退火过程中被激活，以将氢气通过器件的多孔或透射层驱动到有源区。 在优选的结构中可达到高达100cm2 / V秒的有效迁移率。 半切割器件可以以IC芯片的形式制造。

公开(公告)号：US08524574B2

公开(公告)日：2013-09-03

申请号：US13029320

申请日：2011-02-17

申请人： Chiaki Sakai

发明人： Chiaki Sakai

IPC分类号： H01L21/00

CPC分类号： H01L21/76254 ,  H01L21/265 ,  H01L21/26506 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14689 ,  H01L2221/68363

摘要： A method for manufacturing a solid-state image device which includes the steps of: forming a silicon epitaxial growth layer on a silicon substrate; forming photoelectric conversion portions, transfer gates, and a peripheral circuit portion in and/or on the silicon epitaxial growth layer and further forming a wiring layer on the silicon epitaxial growth layer; forming a split layer in the silicon substrate at a side of the silicon epitaxial growth layer; forming a support substrate on the wiring layer; peeling the silicon substrate from the split layer so as to leave a silicon layer formed of a part of the silicon substrate at a side of the support substrate; and planarizing the surface of the silicon layer.

摘要翻译： 一种制造固态图像器件的方法，包括以下步骤：在硅衬底上形成硅外延生长层; 在硅外延生长层中和/或内部形成光电转换部分，转移栅极和外围电路部分，并进一步在硅外延生长层上形成布线层; 在所述硅衬底中在所述硅外延生长层的一侧上形成分裂层; 在所述布线层上形成支撑基板; 从分离层剥离硅衬底，以便在支撑衬底的一侧留下由硅衬底的一部分形成的硅层; 并且平坦化硅层的表面。

公开(公告)号：US20100214457A1

公开(公告)日：2010-08-26

申请号：US12658714

申请日：2010-02-12

申请人： Chiaki Sakai

发明人： Chiaki Sakai

IPC分类号： H04N5/335 ,  H01L31/14 ,  H01L31/18

CPC分类号： H04N5/369 ,  H01L27/1464 ,  H01L27/14698

摘要： A solid-state imaging device includes: a photoelectric conversion portion that receives an incident light from a back surface side of a silicon layer to perform photoelectric conversion on the incident light; and a pixel transistor portion that outputs signal charges generated in the photoelectric conversion portion towards a front surface side of the silicon layer, wherein a gettering layer having internal stress is provided on the front surface side of the silicon layer at a position to overlap the photoelectric conversion portion on a plan view layout thereof.

摘要翻译： 一种固态成像装置，包括：光电转换部，其从硅层的背面侧接收入射光，对入射光进行光电转换; 以及像素晶体管部分，其在所述光电转换部分中产生的信号电荷朝向所述硅层的前表面侧输出，其中在所述硅层的前表面侧上与所述硅层的重叠的位置处设置具有内应力的吸杂层 转换部分。

公开(公告)号：US5490232A

公开(公告)日：1996-02-06

申请号：US223324

申请日：1994-04-05

申请人： Norihide Asano ,  Chiaki Sakai ,  Masanobu Momota

发明人： Norihide Asano ,  Chiaki Sakai ,  Masanobu Momota

IPC分类号： G06F17/50 ,  G06F15/18 ,  G06F15/60

CPC分类号： G06F17/50 ,  Y10S706/919 ,  Y10S706/921

摘要： A computer-aided design system simulates the designer thought processes by the provision of a plurality of discrete unit programs provided respectively for individual design items, Each of the unit programs includes a thought process portion, a knowledge portion and a recognition portion. The thought process portion is for receiving an input instruction via an input device, executing logic operations in accordance with the input instruction to obtain logic results, and transferring the logic results to a related unit program. The related unit program receives the logic results and executes logic operations in accordance with the received logic results to obtain new logic results. The knowledge portion of each unit program is provided for storing the various logic results, and the recognition portion of each unit program is provided for identifying the related unit program which is related to the logic results obtained by executing the logic operations.

摘要翻译： 计算机辅助设计系统通过提供分别为各个设计项目提供的多个离散单元程序来模拟设计者思维过程。每个单元程序包括思维处理部分，知识部分和识别部分。 思维处理部分用于经由输入设备接收输入指令，根据输入指令执行逻辑运算以获得逻辑结果，并将逻辑结果传送到相关单元程序。 相关单元程序接收逻辑结果，并根据接收到的逻辑结果执行逻辑运算，以获得新的逻辑结果。 提供每个单元程序的知识部分用于存储各种逻辑结果，并且提供每个单元程序的识别部分用于识别与通过执行逻辑操作获得的逻辑结果相关的相关单元程序。

公开(公告)号：US20120322193A1

公开(公告)日：2012-12-20

申请号：US13586345

申请日：2012-08-15

申请人： Chiaki Sakai

发明人： Chiaki Sakai

IPC分类号： H01L31/18

CPC分类号： H04N5/369 ,  H01L27/1464 ,  H01L27/14698

摘要： A solid-state imaging device includes: a photoelectric conversion portion that receives an incident light from a back surface side of a silicon layer to perform photoelectric conversion on the incident light; and a pixel transistor portion that outputs signal charges generated in the photoelectric conversion portion towards a front surface side of the silicon layer, wherein a gettering layer having internal stress is provided on the front surface side of the silicon layer at a position to overlap the photoelectric conversion portion on a plan view layout thereof.

摘要翻译： 一种固态成像装置，包括：光电转换部，其从硅层的背面侧接收入射光，对入射光进行光电转换; 以及像素晶体管部分，其在所述光电转换部分中产生的信号电荷朝向所述硅层的前表面侧输出，其中在所述硅层的前表面侧上与所述硅层的重叠的位置处设置具有内应力的吸杂层 转换部分。