公开(公告)号：US5087429A

公开(公告)日：1992-02-11

申请号：US343833

申请日：1989-04-26

申请人： Hiroshi Kamio ,  Kenji Araki ,  Yoshinobu Shima ,  Makoto Suzuki ,  Akira Kazama ,  Shigetake Horie ,  Yasumitsu Nakahama

发明人： Hiroshi Kamio ,  Kenji Araki ,  Yoshinobu Shima ,  Makoto Suzuki ,  Akira Kazama ,  Shigetake Horie ,  Yasumitsu Nakahama

IPC分类号： C30B15/00 ,  C30B15/02 ,  C30B15/12 ,  C30B15/14

CPC分类号： C30B29/06 ,  C30B15/02 ,  C30B15/12 ,  C30B15/14 ,  Y10S117/912 ,  Y10T117/1052 ,  Y10T117/1056 ,  Y10T117/1068

摘要： The present invention relates to a method and apparatus for manufacturing silicon single crystals by the Czochralski method, including the steps of dividing a crucible containing molten silicon into an inner single crystal growing section and an outer material feeding section to allow said molten silicon to move slowly, and pulling a silicon single crystal from said single crystal growing section while continuously feeding silicon starting material to said material feeding section, the improvement wherein temperatures of said material feeding section and said molten silicon are maintained higher than a melting point of silicon by at least more than 12.degree. C.

公开(公告)号：US5126114A

公开(公告)日：1992-06-30

申请号：US460563

申请日：1990-01-03

申请人： Hiroshi Kamio ,  Kenji Araki ,  Yoshinobu Shima ,  Makoto Suzuki ,  Akira Kazama ,  Shigetake Horie ,  Yasumitsu Nakahama

发明人： Hiroshi Kamio ,  Kenji Araki ,  Yoshinobu Shima ,  Makoto Suzuki ,  Akira Kazama ,  Shigetake Horie ,  Yasumitsu Nakahama

IPC分类号： H01L21/18 ,  C30B15/02 ,  C30B15/12 ,  C30B15/14 ,  H01L21/208

CPC分类号： C30B15/02 ,  C30B15/14 ,  Y10S117/90 ,  Y10T117/1052

摘要： According to the present invention, the inside of a crucible in which a molten raw material is placed is partitioned off with a partition ring so that a pulled single crystal is surrounded and the molten raw material may be moved and granular silicon is supplied to the outside of the partition ring, thereby to form the whole surface of outside molten liquid as a granular silicon soluble region so as to maintain the molten liquid surface on the inside of the partition ring at almost a constant level, and also to set the temperature of the molten liquid on the outside of the partition ring higher than the temperature of the inside thereof at least by 10.degree. C. or higher by covering the partition ring and the molten liquid surface on the outside thereof with a heat keeping board.

摘要翻译： 根据本发明，其中放置熔融原料的坩埚的内部用分隔环分隔开，使得拉出的单晶被包围，并且可以移动熔融的原料，并将颗粒状硅供应到外部 从而形成作为粒状硅溶解区域的外部熔融液体的整个表面，以将分隔环内部的熔融液面维持在几乎恒定的水平，并且还将 通过用隔热板覆盖分隔环和其外部的熔融液体表面，将分隔环外侧的熔融液体的内部的温度高于10℃以上。

公开(公告)号：US5087321A

公开(公告)日：1992-02-11

申请号：US460581

申请日：1990-01-03

申请人： Hiroshi Kamio ,  Kenji Araki ,  Yoshinobu Shima ,  Makoto Suzuki ,  Akira Kazama ,  Shigetake Horie

发明人： Hiroshi Kamio ,  Kenji Araki ,  Yoshinobu Shima ,  Makoto Suzuki ,  Akira Kazama ,  Shigetake Horie

IPC分类号： H01L21/18 ,  C30B15/02 ,  C30B15/12 ,  C30B15/14 ,  H01L21/208

CPC分类号： C30B15/02 ,  C30B15/14 ,  Y10S117/90 ,  Y10T117/1052

摘要： Method for manufacturing a large columner silicon single crystal having a diameter of 12 cm-30 cm by pulling up a crystal, growing, and rotating it in one direction, from molten silicon material in a quartz crucible rotating in the other direction. The inside of the quartz crucible is divided into two sections--the peripheral section for feeding and melting raw materials and the central section for growing and pulling the crystal--by means of a cylindrical partition. The material feeding and melting section and the partition are sufficiently covered by an insulating board to reduce radiant energy heat loss and to keep the temperature at least above the freezing point of the molten materials in order to prevent the molten materials from solidifying at or around the inner wall of the cylindrical partition.

公开(公告)号：US5312600A

公开(公告)日：1994-05-17

申请号：US50732

申请日：1993-04-20

申请人： Hiroshi Kamio ,  Kenji Araki ,  Yoshinobu Shima ,  Makoto Suzuki ,  Takeshi Kaneto ,  Yasumitsu Nakahama ,  Takeshi Suzuki ,  Akio Fujibayashi

发明人： Hiroshi Kamio ,  Kenji Araki ,  Yoshinobu Shima ,  Makoto Suzuki ,  Takeshi Kaneto ,  Yasumitsu Nakahama ,  Takeshi Suzuki ,  Akio Fujibayashi

IPC分类号： C30B15/14 ,  C30B15/30

CPC分类号： C30B15/14 ,  Y10S117/90 ,  Y10T117/1052 ,  Y10T117/1068

摘要： An apparatus for making a silicon single crystal large in diameter dependently on the Czochralski process, wherein appropriate openings (11) are provided on the warmth keeping over (10) so as to prevent an undesirable influence caused by atmospheric gas. The major elements of the apparatus are that the sum of areas of the openings (11) is larger than the area of gap (18) formed between the lower end of the warmth keeping cover (10) and the level of silicon solution, and that the warmth keeping cover and the heat insulating member (12) are composed of sheet metal.

摘要翻译： 用于制造直径大的硅单晶的装置取决于切克劳斯基法，其中在保持（10）的温度上提供适当的开口（11），以防止由气氛气体引起的不期望的影响。 设备的主要元件是开口（11）的面积之和大于在保温盖（10）的下端和硅溶液层之间形成的间隙（18）的面积，而且 保温盖和绝热构件（12）由金属板构成。

公开(公告)号：US5139750A

公开(公告)日：1992-08-18

申请号：US690920

申请日：1991-06-14

申请人： Yoshinobu Shima ,  Kenji Araki ,  Hiroshi Kamio ,  Makoto Suzuki

发明人： Yoshinobu Shima ,  Kenji Araki ,  Hiroshi Kamio ,  Makoto Suzuki

IPC分类号： C30B15/14

CPC分类号： C30B15/14 ,  Y10T117/1052 ,  Y10T117/1068

摘要： A silicon single crystal manufacturing apparatus which pulls a large-diameter silicon single crystal with improved yield and efficiency according to the rotary CZ method.As a means of preventing the solidification of molten silicon in the vicinity of a partition member, that is, one of factors which deteriorate the yield and efficiency, a heat shielding member having a predetermined position and shielding width is arranged to face a meniscus position of molten silicon thereby shielding the heat radiation from the meniscus portion.Its shape is a cylindrical shape, truncated-cone shape or a shape formed at its cylindrical bottom with a flange having a central opening.Its material primarily consists of a metal such as molybdenum or tantalum or an electric resistance heater.

公开(公告)号：US4848272A

公开(公告)日：1989-07-18

申请号：US162064

申请日：1988-02-29

申请人： Masanori Ohmura ,  Hiroshi Sakama ,  Kenji Araki ,  Hiroshi Kamio ,  Yoshinobu Shima

发明人： Masanori Ohmura ,  Hiroshi Sakama ,  Kenji Araki ,  Hiroshi Kamio ,  Yoshinobu Shima

IPC分类号： H01L21/205 ,  C23C16/458 ,  C30B25/10 ,  C30B25/12

CPC分类号： C30B25/12 ,  C23C16/4588 ,  C30B25/10

摘要： An apparatus for forming epitaxial layers, comprises a first susceptor disposed in a reaction furnace and having an outer periphery constituted by a heat reflection material and capable of supporting a plurality of semiconductor wafers, a second susceptor disposed coaxially with the first susceptor such as to surround the first susceptor at a predetermined space therefrom and having an inner periphery constituted by a heat reflection material and capable of supporting a plurality of semiconductor wafers such that these semiconductor wafers face the semiconductor wafers supported by the first susceptor, and a pair of heat reflection members disposed in the reaction furnace between the outer periphery of the first susceptor and the inner periphery of the second susceptor. The first and second susceptors are rotated in mutually opposite directions about a common vertical axis during an epitaxial growing process.

摘要翻译： 一种用于形成外延层的装置，包括：第一基座，设置在反应炉中，具有由热反射材料构成的外周，并且能够支撑多个半导体晶片;与第一基座同轴设置的第二基座， 所述第一基座处于预定的空间，并且具有由热反射材料构成的内周，并且能够支撑多个半导体晶片，使得这些半导体晶片面对由第一基座支撑的半导体晶片，以及一对热反射构件 设置在第一基座的外周和第二基座的内周之间的反应炉中。 在外延生长过程期间，第一和第二感受器在相互垂直的轴线上以相互相反的方向旋转。

公开(公告)号：US5009863A

公开(公告)日：1991-04-23

申请号：US540647

申请日：1990-06-19

申请人： Yoshinobu Shima ,  Hiroshi Kamio

发明人： Yoshinobu Shima ,  Hiroshi Kamio

IPC分类号： C30B15/22 ,  C30B15/02 ,  C30B15/10 ,  C30B15/12 ,  C30B15/14 ,  C30B29/06 ,  H01L21/208

CPC分类号： C30B15/12 ,  C30B15/14 ,  Y10S117/90 ,  Y10T117/1052 ,  Y10T117/1056 ,  Y10T117/1068

摘要： A silicon single crystal manufacturing apparatus in which a partition member formed with at least one small hole through its lower part is arranged in a rotating quartz crucible so as to surround a large cylindrical silicon single crystal which is rotated and pulled. The whole or part of the partition member is made from cellular silica glass whose cell content (volume percentage) is between 0.01 and 15% or less than 0.01% but increased to 0.01 through 15% by the heat used for melting starting silicon material. Thus, the molten material contacting with the inside of the partition member is prevented from decreasing in temperature and solidification of the molten material from this portion is prevented.

公开(公告)号：US5143704A

公开(公告)日：1992-09-01

申请号：US722259

申请日：1991-06-27

申请人： Yasumitsu Nakaham ,  Kenji Araki ,  Hiroshi Kamio

发明人： Yasumitsu Nakaham ,  Kenji Araki ,  Hiroshi Kamio

IPC分类号： C30B15/12 ,  C30B15/14

CPC分类号： C30B15/14 ,  C30B15/12 ,  Y10S117/90 ,  Y10T117/1052 ,  Y10T117/1068

摘要： In a silicon single crystal manufacturing apparatus of the type which continuously feeds starting material, a metallic heat keeping plate is arranged to cover a partition member dividing molten silicon into a single crystal growing section and a material melting section within a quartz crucible and an upper side of the material melting section. The metallic heat keeping plate is provided for the purpose of preventing the occurrence of solidification of the molten silicon on the inner side of the partition member and preventing excessive cooling of a silicon single crystal. The metallic heat keeping plate has a thickness of 3 mm or less and its material is tantalum or molybdenum. Further, the heat keeping plate includes a straight body portion formed with a plurality of openings for adjusting the temperature of the single crystal.

摘要翻译： 在连续供给原料的硅单晶制造装置中，金属保温板被配置为覆盖将熔融硅分割成单晶生长部分的分隔构件和石英坩埚内的材料熔化部分和上侧 的材料熔化部分。 金属保温板是为了防止在分隔件的内侧发生熔融硅的凝固而防止硅单晶的过度冷却。 金属保温板的厚度为3mm以下，其材料为钽或钼。 此外，保温板包括形成有用于调节单晶温度的多个开口的直体部。

公开(公告)号：US4570453A

公开(公告)日：1986-02-18

申请号：US648878

申请日：1984-09-10

申请人： Hiroshi Kamio ,  Yasushi Ueno ,  Takao Noguchi ,  Kazuo Kunioka ,  Shuzo Fukuda

发明人： Hiroshi Kamio ,  Yasushi Ueno ,  Takao Noguchi ,  Kazuo Kunioka ,  Shuzo Fukuda

IPC分类号： B21B45/02 ,  C21D1/667 ,  C21D9/52 ,  F25D17/02

CPC分类号： B21B45/0233 ,  C21D1/667

摘要： An apparatus for continuously cooling a heated metal plate lying horizontally, which comprises: an upper cooling water ejecting means, arranged above the metal plate in parallel to the width direction thereof, for ejecting cooling water onto the upper surface of the metal plate; a water tank, arranged below the metal plate, for receiving cooling water; and a lower cooling water ejecting means having a lower cooling water ejecting bore, arranged in the water tank in parallel to the width direction of the metal plate. The lower cooling water ejecting means ejects, in the form of a jet stream, cooling water from the lower cooling water ejecting bore together with cooling water received in the water tank, onto the lower surface of the metal plate. The above-mentioned jet stream is surrounded by a jet stream guide duct arranged between the lower cooling water ejecting means and the lower surface of the metal plate.

摘要翻译： 一种用于连续冷却水平放置的加热金属板的装置，包括：上部冷却水喷射装置，其平行于其宽度方向布置在金属板的上方，用于将冷却水喷射到金属板的上表面上; 一个水箱，布置在金属板下面，用于接收冷却水; 以及具有下部冷却水喷射孔的下部冷却水喷射装置，与所述金属板的宽度方向平行配置在所述水箱中。 较低的冷却水喷射装置以喷射流的形式将来自下部冷却水喷射孔的冷却水与接收在水箱中的冷却水一起喷射到金属板的下表面上。 上述喷射流由布置在下部冷却水喷射装置和金属板的下表面之间的喷流引导管围绕。

公开(公告)号：US4440584A

公开(公告)日：1984-04-03

申请号：US406932

申请日：1982-08-10

申请人： Kenji Takeshige ,  Kenji Hirabe ,  Yukifumi Ogawa ,  Kazuyoshi Arikata ,  Kazunori Yako ,  Kenichi Sakai ,  Toshinori Matsuo ,  Hiroshi Kamio

发明人： Kenji Takeshige ,  Kenji Hirabe ,  Yukifumi Ogawa ,  Kazuyoshi Arikata ,  Kazunori Yako ,  Kenichi Sakai ,  Toshinori Matsuo ,  Hiroshi Kamio

IPC分类号： B21B45/02 ,  C21D9/52 ,  C21D9/573

CPC分类号： B21B45/0233 ,  C21D9/573 ,  B21B45/0218

摘要： A method and an apparatus for cooling a steel sheet, which comprises: ejecting cooling water onto a steel sheet laid horizontally from above and from below said steel sheet immediately after the completion of hot rolling to cool said steel sheet; shielding each of the both side edge portions of the upper surface in the width direction of said steel sheet from said ejected cooling water by a shielding means movable in the width direction of said steel sheet so that the temperature distribution in the width direction of said steel sheet becomes uniform at the completion of the ejection of cooling water; and, determining a shielding width of each of said both side edge portions of said steel sheet, which is shielded from said ejected cooling water, on the basis of the width and the thickness of said steel sheet, the temperature and the flow rate per unit area of cooling water ejected onto the upper and the lower surfaces of said steel sheet, the period of time from start to completion of the ejection of cooling water, and the temperature distribution in the width direction of said steel sheet immediately before the start of the ejection of cooling water.

摘要翻译： 一种用于冷却钢板的方法和装置，其特征在于包括：在热轧完成之后立即将冷却水喷射到钢板的上下水平地钢板上，以冷却所述钢板; 通过可沿所述钢板的宽度方向移动的屏蔽装置将所述钢板的宽度方向的上表面的两侧边缘部分从所述喷射的冷却水中屏蔽，使得所述钢的宽度方向上的温度分布 在冷却水喷射完成时，片材变得均匀; 根据所述钢板的宽度和厚度，确定所述钢板的与所喷出的冷却水屏蔽的所述两个侧边缘部分的每个的屏蔽宽度，每单位的温度和流量 喷射到所述钢板的上表面和下表面上的冷却水的面积，冷却水的喷射开始到结束的时间段以及刚刚开始之前的所述钢板的宽度方向的温度分布 喷出冷却水。