Abstract:
An analog-switch circuit (1) having: a resistor (R1); a resistor (R2); a CMOS analog switch (S1) in which a first end is connected to an input end (Vin) via the resistor (R1), and a second end is connected to an output end (Vout); and a CMOS analog switch (S2), in which a first end is connected to the first end of the analog switch (S1), and a second end is connected to a ground end via the resistor (R2). The CMOS analog switch (S2) is turned on or off in antiphase to the analog switch (S1).
Abstract:
A protection circuit according to the present invention includes: a diode (D1) having an anode thereof connected to a gate signal input terminal and a cathode thereof connected to the gate of an output transistor (N1); a resistor (R1) having one end thereof connected to the gate signal input terminal and the other end thereof connected to ground; a PNP bipolar transistor (Qp1) having the emitter, base and collector thereof connected to the gate of the output transistor (N1), the one end of the resistor (R1) and ground, respectively. With this configuration, it is possible to prevent, without the need for electric power, an open-drain output transistor from erroneously turning on as a result of an electrostatic pulse or the like being applied thereto, and thus to protect the output transistor from electrostatic breakdown.
Abstract:
A semiconductor integrated circuit device comprises a first terminal (denoted by VCC) connected to a power supply in a normally mounted state, a second terminal (denoted by SB) connected to a signal line in the normally mounted state and to a power supply in a reversely mounted state, a third terminal (denoted by SGND) connected to the ground in the normally mounted state, fourth terminals (denoted by HU−, HW−) connected to the signal line in the normally mounted state and to the ground in the reversely mounted state, electrostatic protective diodes (denoted by D1, D6) having anodes connected to the third terminal and cathodes connected to the fourth terminals and serving as means for protecting the fourth terminal in the normally mounted state, a current control resistor (R1) having one end connected to the second terminal and serving as means for preventing the second terminal from being broken in the reversely mounted state, a Zener diode (ZD) having an anode connected to the third terminal and a cathode connected to the other end of the current control resistor (R1). With this, destruction of the semiconductor integrated circuit device when it is reversely mounted onto a board or into a slot is prevented without providing any redundant external terminal.
Abstract:
A semiconductor integrated circuit device comprises a first terminal (denoted by VCC) connected to a power supply in a normally mounted state, a second terminal (denoted by SB) connected to a signal line in the normally mounted state and to a power supply in a reversely mounted state, a third terminal (denoted by SGND) connected to the ground in the normally mounted state, fourth terminals (denoted by HU−, HW−) connected to the signal line in the normally mounted state and to the ground in the reversely mounted state, electrostatic protective diodes (denoted by D1, D6) having anodes connected to the third terminal and cathodes connected to the fourth terminals and serving as means for protecting the fourth terminal in the normally mounted state, a current control resistor (R1) having one end connected to the second terminal and serving as means for preventing the second terminal from being broken in the reversely mounted state, a Zener diode (ZD) having an anode connected to the third terminal and a cathode connected to the other end of the current control resistor (R1). With this, destruction of the semiconductor integrated circuit device when it is reversely mounted onto a board or into a slot is prevented without providing any redundant external terminal.
Abstract:
In a semiconductor device, a problem of heat generation and power loss is alleviated, and the semiconductor device is protected against the failure due to the overcurrent. The semiconductor device includes an IC chip having a large-current output. In the IC chip a measuring terminal is electrically connected with a first pad via a gold wire. A potential difference generated by the impedance of the gold wire is compared with a predetermined value. When the potential difference exceeds the predetermined threshold level, the semiconductor device operates to turn off a PMOS-type transistor.
Abstract:
Provided are an amphipathic compound represented by any of the following Formulas: ##STR1## (R.sub.1 is a linear or branched, saturated hydrocarbon group having 6 to 48 carbon atoms, or a linear or branched, unsaturated hydrocarbon group containing 1 to 12 unsaturated double bond and having 6 to 48 carbon atoms; Y is NH, N--(CH.sub.2 --CH.dbd.CH.sub.2), or O; Q is --CH.sub.2 --C(R.sub.2).dbd.CH.sub.2 or --R.sub.4 --O--CO--C(R.sub.2).dbd.CH.sub.2 ; and M is alkali metal, an ammonium group, or --(CH.sub.2 CH.sub.2 O).sub.m H), a copolymer of the amphipatic compound with a copolymerizable ethylenically unsaturated compound and, a paper making additive containing a water soluble or dispersible high molecular compound as an active ingredient and processes for producing these high molecular compounds.
Abstract:
A drive circuit of a stepping motor includes a D/A converter, a current controller having a comparing unit, and an abnormality detecting unit. The DAC generates a target voltage indicating a target value for an excitation current determined based on a reference voltage indicating an upper limit value of the excitation current flowing into the stepping motor. The current controller controls the excitation current based on this target voltage. The comparing unit compares a voltage corresponding to the excitation current and the target voltage. The abnormality detecting unit detects an abnormality of the wire between the drive circuit and the stepping motor based on an output signal from the comparing unit and a control signal indicating a polarity of the excitation current.
Abstract:
A temperature protective circuit of the semiconductor integrated circuit unit of the present invention is configured such that the circuit includes a heat generation detecting section for detecting a monitored temperature and a limiting signal producing section for limiting continuously or stepwise the drive of a load (for example, the upper limit of drive current) according to the above-mentioned monitored temperature, after the above-mentioned monitored temperature exceeds a first threshold temperature, based on the detection results of the above-mentioned heat generation detecting section. With such a configuration, an abnormal heat generation of a subject of overheat monitoring can be previously limited to perform a more safely temperature protective operation.
Abstract:
A drive circuit of a stepping motor includes a D/A converter, a current controller having a comparing unit, and an abnormality detecting unit. The DAC generates a target voltage indicating a target value for an excitation current determined based on a reference voltage indicating an upper limit value of the excitation current flowing into the stepping motor. The current controller controls the excitation current based on this target voltage. The comparing unit compares a voltage corresponding to the excitation current and the target voltage. The abnormality detecting unit detects an abnormality of the wire between the drive circuit and the stepping motor based on an output signal from the comparing unit and a control signal indicating a polarity of the excitation current.
Abstract:
A semiconductor device comprising an internal current generating section (1) for supplying an output current (i2) dependent on an input current (i1) into an IC, an external terminal (2) for connecting an external resistor (Rex) to the input end side of the internal current generating section (1), a current limiting element (3) connoted between the input end of the internal current generating section (1) and the external terminal (2), a first current limiting section (4) for pulling in the input current (i1) when one end voltage VA of the current limiting element (3) is higher than a first threshold voltage VB, and a second current limiting section (5) for pulling in the input current (i1) when the terminal voltage VC of the external terminal (2) is higher than a second threshold voltage. System down can be avoided by operating the internal circuit surely regardless of the state of the external terminal.