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    Apparatus for producing semiconductor film
    1.
    发明授权
    Apparatus for producing semiconductor film 失效
    半导体膜制造装置

    公开(公告)号：US5252132A

    公开(公告)日：1993-10-12

    申请号：US796618

    申请日：1991-11-22

    申请人： Masao Oda ,  Yoshiyuki Goto ,  Toyomi Osige ,  Tatsuya Iwasa ,  Yoshimi Kinoshita ,  Katsuhisa Kitano ,  Kazuo Yoshida

    发明人： Masao Oda ,  Yoshiyuki Goto ,  Toyomi Osige ,  Tatsuya Iwasa ,  Yoshimi Kinoshita ,  Katsuhisa Kitano ,  Kazuo Yoshida

    IPC分类号： C23C16/48 ,  C30B25/10 ,  C30B25/14 ,  H01L21/00 ,  C23C16/00

    CPC分类号： H01L21/67115 ,  C23C16/481 ,  C23C16/488 ,  C30B25/105 ,  C30B25/14

    摘要： A semiconductor film production apparatus includes a reaction vessel for containing a substrate and including a gas supply port for supplying a reaction gas to the vessel, a gas discharge port for discharging the reaction gas from the vessel after reaction, and a light-transmitting glass window; a light source disposed outside the reaction vessel for irradiating a substrate in the reaction vessel through the light-transmitting glass window to heat the substrate; a cylindrical substrate holder disposed in the reaction vessel for holding the substrate with a first surface facing the light source and a second surface, opposed to the first surface, exposed to the reaction gas; a ring plate having a central opening with an area smaller than the substrate and an outside diameter dividing the reaction vessel into two compartments, the ring plate contacting the first surface of the substrate; a carrier gas supply port for introducing a carrier gas between the substrate and the light-transmitting glass window; and a reaction gas supply nozzle disposed in the substrate holder connected to said gas supply port and opposing the second surface of the substrate.

    摘要翻译： 半导体膜制造装置包括：容纳基板的反应容器，具有用于向容器供给反应气体的气体供给口;反应后从反应容器排出反应气体的气体排出口;透光性玻璃窗 ; 设置在所述反应容器的外部的光源，用于通过所述透光玻璃窗照射反应容器中的基板以加热所述基板; 设置在所述反应容器中的圆柱形衬底保持器，用于保持所述衬底具有面向所述光源的第一表面和与所述第一表面相对的暴露于所述反应气体的第二表面; 环形板，具有中心开口，面积小于基板，外径将反应容器分成两个隔室，环板接触基板的第一表面; 用于在基板和透光玻璃窗之间引入载气的载气供给口; 以及反应气体供给喷嘴，其设置在与所述气体供给口连接并与所述基板的第二表面相对的所述基板保持件中。

    Thin film forming apparatus having a gas flow settling device
    2.
    发明授权
    Thin film forming apparatus having a gas flow settling device 失效
    具有气流稳定装置的薄膜形成装置

    公开(公告)号：US5024182A

    公开(公告)日：1991-06-18

    申请号：US376015

    申请日：1989-07-06

    申请人： Toshiyuki Kobayashi ,  Masao Koshinaka ,  Yoshimi Kinoshita ,  Masao Oda ,  Kenji Yoshizawa

    发明人： Toshiyuki Kobayashi ,  Masao Koshinaka ,  Yoshimi Kinoshita ,  Masao Oda ,  Kenji Yoshizawa

    IPC分类号： C23C16/50 ,  C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C23C16/511 ,  H01L21/205 ,  H01L21/31

    CPC分类号： C23C16/45502 ,  C23C16/452 ,  C23C16/455

    摘要： An apparatus for forming a thin film on a substrate by bringing a first gas and a second gas into reaction with each other in a reaction chamber near the surface of the substrate in the reaction chamber. The apparatus has a plasma generating chamber disposed adjacent to the reaction chamber for generating a plasma of the first gas in a predetermined direction. A first gas inlet is provided at the boundary between the plasma generating chamber and the reaction chamber and formed to extend in the predetermined direction, while a second gas inlet is provided in the vicinity of the first gas inlet and extended in the predetermined direction. The apparatus further has a first gas supplying device for introducing the first gas into the plasma generating chamber and for introducing the first gas activated by a plasma in the plasma generating chamber into the reaction chamber through the first gas inlet, and second gas supplying device for supplying the second gas into the reaction chamber through the second gas inlet. A first flow settling device having plates disposed transverse to the flow of the first gas is positioned between the first gas inlet and plasma chamber. A second flow settling device may be located between the second gas supplying device and second gas inlet.

    摘要翻译： 一种用于在反应室中的基板表面附近的反应室中使第一气体和第二气体彼此反应而在基板上形成薄膜的装置。 该装置具有邻近反应室设置的等离子体产生室，用于沿预定方向产生第一气体的等离子体。 第一气体入口设置在等离子体产生室和反应室之间的边界处并形成为沿预定方向延伸，而第二气体入口设置在第一气体入口附近并沿预定方向延伸。 该装置还具有：第一气体供给装置，其用于将第一气体引入等离子体发生室，并且通过第一气体入口将等离子体产生室中的等离子体激活的第一气体引入反应室;第二气体供给装置， 通过第二气体入口将第二气体供应到反应室中。 具有横向于第一气体的流动设置的板的第一流动沉降装置位于第一气体入口和等离子体室之间。 第二流动沉降装置可以位于第二气体供给装置和第二气体入口之间。

    Method and apparatus for forming thin film
    3.
    发明授权
    Method and apparatus for forming thin film 失效
    用于形成薄膜的方法和装置

    公开(公告)号：US5192370A

    公开(公告)日：1993-03-09

    申请号：US542148

    申请日：1990-06-22

    申请人： Masao Oda ,  Tatsuya Iwasa

    发明人： Masao Oda ,  Tatsuya Iwasa

    IPC分类号： C23C16/50 ,  C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C23C16/511 ,  H01L21/205 ,  H01L21/31

    CPC分类号： C23C16/45517 ,  C23C16/452 ,  C23C16/45591 ,  Y10S156/916

    摘要： Method of forming a thin film on a substrate by CVD (Chemical Vapor Deposition) method and an apparatus therefor, wherein a first gas is supplied from a reaction gas supply port in a reaction chamber, and an active species produced by exciting a second gas are supplied from an active species supply port in the reaction chamber, and a thin film is formed on the substrate by reaction of the first reaction gas and the active species, since a metal porous plate having a number of small holes is installed close to the substrate between the active species supply port and a heater so as to enclose at least the substrate and the active species supply port, the precursor forming reaction is limited to position on the surface of the substrate and diffusion of the precursor to the outer circumferential portion and the inner wall of the reaction chamber is prevented, thereby the low dust producing process to advance the thin film forming reaction is obtained without generating the reaction product of fine particle form which may cause the dust producing.

    摘要翻译： 通过CVD（化学气相沉积）法在基板上形成薄膜的方法及其装置，其中从反应室中的反应气体供给口供给第一气体，通过激发第二气体产生的活性物质 由反应室中的活性物质供给口供给，并且通过第一反应气体和活性物质的反应，在基板上形成薄膜，因为具有多个小孔的金属多孔板安装在基板附近 在活性物质供给口和加热器之间至少包围基材和活性物质供给口的情况下，前体形成反应被限制在基材表面上的位置和前体向外周部的扩散， 防止反应室的内壁，从而获得促进薄膜形成反应的低粉尘产生过程而不产生反应产物 可能导致粉尘产生的细颗粒形式。

    Apparatus for forming thin film
    4.
    发明授权
    Apparatus for forming thin film 失效
    用于形成薄膜的装置

    公开(公告)号：US5010842A

    公开(公告)日：1991-04-30

    申请号：US362745

    申请日：1989-06-07

    申请人： Masao Oda ,  Yoshimi Kinoshita ,  Masahiro Hayama

    发明人： Masao Oda ,  Yoshimi Kinoshita ,  Masahiro Hayama

    IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  H01L21/31

    CPC分类号： C23C16/45565 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45578

    摘要： Apparatus for forming a thin film on a substrate surface by a CVD (Chemical Vapor Deposition) method which includes diffusing pipes for diffusing and supplying a first reactive gas, and uniformizing plates for supplying uniformly an active species formed through excitation of a second reactive gas. The first reactive gas and the active species are mixed uniformly with each other, and the resultant uniform mixture is supplied uniformly to the substrate surface, whereby a uniform film deposition rate is obtained in a reaction zone in which the thin film is formed, and a uniform thin film is formed over the entire substrate surface even when the area of the substrate surface is large.

    摘要翻译： 用于通过CVD（化学气相沉积）方法在衬底表面上形成薄膜的装置，其包括用于扩散和供应第一反应气体的扩散管，以及均匀地均匀地供给通过激发第二反应气体形成的活性物质的板。 将第一反应气体和活性物质彼此均匀地混合，将所得到的均匀混合物均匀地供给到基板表面，由此在形成有薄膜的反应区域中获得均匀的膜沉积速率， 即使当基板表面的面积大时，也在整个基板表面上形成均匀的薄膜。

    Semiconductor producing apparatus
    5.
    发明授权
    Semiconductor producing apparatus 失效
    半导体制造装置

    公开(公告)号：US4919077A

    公开(公告)日：1990-04-24

    申请号：US247443

    申请日：1988-08-23

    申请人： Masao Oda ,  Toshiyuki Kobayashi ,  Yoshimi Kinoshita

    发明人： Masao Oda ,  Toshiyuki Kobayashi ,  Yoshimi Kinoshita

    IPC分类号： C23C16/452 ,  C23C16/48 ,  C23C16/517

    CPC分类号： C23C16/517 ,  C23C16/452 ,  C23C16/482 ,  C23C16/483

    摘要： A semiconductor producing apparatus for use in photochemical vapor deposition for forming various types of film on a substrate at a low temperature as a first reaction gas excited and decomposed by a laser beam and a second reaction gas converted into a plasma state by a plasma generator react with each other in a reaction chamber in which a substrate is mounted. Two kinds of electrodes are provided in upper and lower positions in the reaction chamber opposing each other. The upper electrode is connected to a high-frequency power source and the lower electrode is used as a common electrode on which the substrate is mounted to control film forming speed, while an ultraviolet light source for irradiating the interior of the reaction chamber with ultraviolet rays is provided to obtain a dense film.

    摘要翻译： PCT No.PCT / JP87 / 01045 Sec。 371日期1988年8月23日 102（e）日期1988年8月23日PCT 1987年12月26日PCT。一种用于光化学气相沉积的半导体制造装置，用于在低温下在基板上形成各种类型的膜作为第一反应气体，作为第一反应气体被激发和分解 通过等离子体发生器转换为等离子体状态的激光束和第二反应气体在安装有基板的反应室中彼此反应。 在反应室中的上下位置设置两个电极，彼此相对。 上电极连接到高频电源，下电极用作安装基板以控制成膜速度的公共电极，而用于用紫外线照射反应室内部的紫外光源 被提供以获得致密膜。

    Dye-sensitized photoelectric conversion apparatus and manufacturing method thereof
    8.
    发明授权
    Dye-sensitized photoelectric conversion apparatus and manufacturing method thereof 失效
    染料敏化光电转换装置及其制造方法

    公开(公告)号：US08563854B2

    公开(公告)日：2013-10-22

    申请号：US10525496

    申请日：2003-08-19

    申请人： Tsutomu Imoto ,  Masao Oda

    发明人： Tsutomu Imoto ,  Masao Oda

    IPC分类号： H01L31/00

    CPC分类号： H01M14/005 ,  H01G9/2031 ,  H01G9/2059 ,  Y02E10/542 ,  Y02P70/521

    摘要： A dye-sensitized photoelectric conversion apparatus having enhanced energy conversion efficiency and a production method thereof are provided.The dye-sensitized photoelectric conversion apparatus which has semiconductor layer (13) containing a photosensitizing dye (14) and is constituted such that a charge carrier generated by allowing light to incident in the photosensitizing dye (14) is drawn out through the semiconductor layer (13), in which the semiconductor layer (13) is constituted by a plurality of regions (13A to 13D) having different energy levels from one another of a passage through which the charge carrier is transferred. Further, the plurality of regions (13A to 13D) are arranged such that the energy levels are reduced stepwise and/or continuously in the direction of drawing the charge carrier out.

    摘要翻译： 提供了具有提高的能量转换效率的染料敏化光电转换装置及其制造方法。 具有含有光敏染料（14）的半导体层（13）的染料敏化光电转换装置被构成为使得通过使光入射在光敏染料（14）中产生的电荷载体通过半导体层（ 13），其中半导体层（13）由多个区域（13A至13D）构成，所述多个区域（13A至13D）具有彼此不同的电荷载流子通过的能级。 此外，多个区域（13A〜13D）被布置成使得能量水平沿着将电荷载体拉出的方向逐步地和/或连续地减小。

    Washing apparatus
    9.
    发明授权
    Washing apparatus 失效
    洗衣机

    公开(公告)号：US5787910A

    公开(公告)日：1998-08-04

    申请号：US652923

    申请日：1996-05-24

    申请人： Masao Oda ,  Michio Fujiwara ,  Tomoyuki Kanda ,  Hideho Taguchi ,  Yasunori Kurahashi ,  Takao Morisaki ,  Takasuke Umemoto ,  Takayuki Inoue ,  Fusako Tanaka

    发明人： Masao Oda ,  Michio Fujiwara ,  Tomoyuki Kanda ,  Hideho Taguchi ,  Yasunori Kurahashi ,  Takao Morisaki ,  Takasuke Umemoto ,  Takayuki Inoue ,  Fusako Tanaka

    IPC分类号： A47L15/00 ,  A47L17/00 ,  B05B9/00 ,  B08B3/02

    CPC分类号： A47L17/00 ,  A47L15/0086

    摘要： A washing apparatus is compact as well as easy to handle, with which a user can wash down dirt effectively in a short time. Washing liquid supplied from the washing liquid supplying means is made in the form of high-speed jet liquid by a high-speed jet stream spouting means. The high-speed jet liquid is spouted from the aperture of the first cover to wash down dirt by the impact given by the high-speed jet liquid. A washing object is dewatered by gas spouted from the aperture by a blowing means. The high-speed jet stream spouting means is comprised of a rotating object having a plurality of radial shape flow paths extending from a center portion to a circumference of the rotating object, and a liquid supplying portion for supplying washing liquid to a central portion of the radial shape flow paths. A rotating means rotates the rotating object so that washing liquid supplied in the radial shape flow paths is accelerated in the direction of a circumference as well as a radius of the rotating object by rotation. The accelerated washing liquid is spouted from an aperture in the form of high-speed jet liquid.

    摘要翻译： 洗涤装置紧凑，易于操作，用户可以在短时间内有效地清洗污垢。 从洗涤液供给装置供给的洗涤液通过高速喷射流喷射装置被制成高速喷射液体的形式。 高速喷射液体从第一盖的孔口喷出，以通过高速喷射液体的冲击来清除污垢。 洗涤物体通过吹出装置从孔中喷出的气体脱水。 高速喷射流喷射装置包括具有从旋转物体的中心部分延伸到圆周的多个径向形状的流动路径的旋转物体，以及用于将清洗液供应到旋转物体的中心部分的液体供应部分 径向形状流动路径。 旋转装置旋转旋转物体，使得在径向形状流动路径中供应的洗涤液体在圆周方向以及旋转物体的旋转半径方向上被加速。 加速的洗涤液体以高速喷射液体形式的孔径喷出。