Method and apparatus for inspecting optical modules
    8.
    发明授权
    Method and apparatus for inspecting optical modules 有权
    用于检查光学模块的方法和装置

    公开(公告)号:US07102738B2

    公开(公告)日:2006-09-05

    申请号:US10665464

    申请日:2003-09-22

    IPC分类号: G01N21/00

    CPC分类号: G01M11/33

    摘要: A method and apparatus for inspecting a plurality of optical modules, in which the optical modules are given channel numbers, a plurality of inspection items, which are related to optical characteristics and/or electrical characteristics of the optical modules, are measured in parallel, and measurement data on the inspection items is stored in storing device. This makes it possible to inspect the optical modules efficiently in a short time, eliminating waiting time.

    摘要翻译: 测量与光学模块的光学特性和/或电气特性有关的多个检查项目,其中光学模块被给予通道号的多个光学模块的并行测量方法和装置,以及 检查项目的测量数据存储在存储装置中。 这样可以在短时间内有效地检查光模块,从而消除等待时间。

    Semiconductor laser device and semiconductor laser module using the same
    9.
    发明授权
    Semiconductor laser device and semiconductor laser module using the same 有权
    半导体激光器件和半导体激光器模块使用相同

    公开(公告)号:US06567447B1

    公开(公告)日:2003-05-20

    申请号:US09680153

    申请日:2000-10-03

    IPC分类号: H01S500

    摘要: In the semiconductor laser device of the present invention, a semiconductor stacked structure including an active layer comprising a strained multi-quantum well structure is formed on a substrate 1, a cavity length is larger than 1000 &mgr;m but equal to or smaller than 1800 &mgr;m, and a low-reflection film S1 having a reflectance of 3% or less is formed on one facet and a high-reflection film S2 having a reflectance of 90% or more is formed on the other facet. The semiconductor laser module has a structure in which the semiconductor laser device is set to a cooling device constituted by electrically alternately arranging 40 pairs or more of the Peltier elements and holding them by top and bottom ceramic plates and sealed in the package. A grating having a reflection bandwidth of 1.5 nm or less is formed on an optical fiber to be built in.

    摘要翻译: 在本发明的半导体激光装置中,在基板1上形成包括应变多量子阱结构的有源层的半导体层叠结构,空洞长度大于1000μm,但等于或小于1800μm, 并且在一个面上形成反射率为3%以下的低反射膜S1,另一方面形成反射率为90%以上的高反射膜S2。 半导体激光器模块具有这样的结构,其中半导体激光器件被设置为通过电气交替地布置40对或更多个珀耳帖元件并由顶部和底部陶瓷板保持并且密封在封装中的冷却装置。 在内置的光纤上形成具有1.5nm以下的反射带宽的光栅。