摘要:
A semiconductor laser module has a semiconductor laser device; a package for housing the semiconductor laser device; a PBC fixed in the package for polarization-synthesizing two laser beams output from the semiconductor laser device; a depolarizing element fixed in the package for depolarizing a synthesizing light output from the PBC; and an optical fiber for receiving a light output from the depolarizing element.
摘要:
A semiconductor laser device having two active-layer stripe structures includes an n-InP substrate, an n-InP clad layer, a lower GRIN-SCH layer, an active layer, an upper GRIN-SCH layer, a p-InP clad layer, and a p-InGaAsP contact layer grown in this order, in a side cross section cut along one of the stripe structure. A high-reflection film is disposed on a reflection-side end surface, and a low-reflection film is disposed on an emission-side end surface. A p-side electrode is disposed on only a part of the upper surface of the p-InGaAsP contact layer so that a current non-injection area is formed on an area absent the p-side electrode.
摘要:
A semiconductor laser module has a semiconductor laser device; a package for housing the semiconductor laser device; a PBC fixed in the package for polarization-synthesizing two laser beams output from the semiconductor laser device; a depolarizing element fixed in the package for depolarizing a synthesizing light output from the PBC; and an optical fiber for receiving a light output from the depolarizing element.
摘要:
A single semiconductor laser device used in a semiconductor laser module of an optical amplifier and having a first light emitting stripe with a diffraction grating and at least one other light emitting stripe with a diffraction grating and which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface.
摘要:
A semiconductor laser module has a semiconductor laser device; a package for housing the semiconductor laser device; a PBC fixed in the package for polarization-synthesizing two laser beams output from the semiconductor laser device; a depolarizing element fixed in the package for depolarizing a synthesizing light output from the PBC; and an optical fiber for receiving a light output from the depolarizing element.
摘要:
A semiconductor laser module has a semiconductor laser device; a package for housing the semiconductor laser device; a PBC fixed in the package for polarization-synthesizing two laser beams output from the semiconductor laser device; a depolarizing element fixed in the package for depolarizing a synthesizing light output from the PBC; and an optical fiber for receiving a light output from the depolarizing element.
摘要:
A semiconductor laser module includes a single semiconductor laser device having a first light emitting stripe and at least one other light emitting stripe which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface. It also includes a first lens positioned so that the first laser beam and the at least one other laser beam emitted from the semiconductor laser device are incident thereon, the first lens configured to separate the first laser beam and the at least one other laser beam. A beam synthesizing member is included and has a first input part on which the first laser beam is incident, at least one other input part on which the at least one other laser beam is incident, and an output part from which the first laser beam emerging from the first input part and the at least one other laser beam emerging from the at least one other input part are multiplexed and emitted as a multiplexed laser beam. An optical fiber is positioned to receive the multiplexed laser beam therein.
摘要:
A method and apparatus for inspecting a plurality of optical modules, in which the optical modules are given channel numbers, a plurality of inspection items, which are related to optical characteristics and/or electrical characteristics of the optical modules, are measured in parallel, and measurement data on the inspection items is stored in storing device. This makes it possible to inspect the optical modules efficiently in a short time, eliminating waiting time.
摘要:
In the semiconductor laser device of the present invention, a semiconductor stacked structure including an active layer comprising a strained multi-quantum well structure is formed on a substrate 1, a cavity length is larger than 1000 &mgr;m but equal to or smaller than 1800 &mgr;m, and a low-reflection film S1 having a reflectance of 3% or less is formed on one facet and a high-reflection film S2 having a reflectance of 90% or more is formed on the other facet. The semiconductor laser module has a structure in which the semiconductor laser device is set to a cooling device constituted by electrically alternately arranging 40 pairs or more of the Peltier elements and holding them by top and bottom ceramic plates and sealed in the package. A grating having a reflection bandwidth of 1.5 nm or less is formed on an optical fiber to be built in.
摘要:
A semiconductor laser module is packaged on a mounting substrate through a thermal diffusion sheet member. The thermal diffusion sheet member is that having thermal conductivity where thermal conductivity in the surface direction is greater than that in the thickness direction. Specifically, the thermal diffusion sheet member is graphite, for example, and has a thermal conductivity of 300 W/m·K or greater in the surface direction.