公开(公告)号：US4759951A

公开(公告)日：1988-07-26

申请号：US910875

申请日：1986-09-23

申请人： Masataka Itoh ,  Masaya Nagata ,  Shuhei Tsuchimoto ,  Atsushi Yoshinouchi ,  Hiroshi Wada ,  Katsushi Okibayashi ,  Soji Ohhara

发明人： Masataka Itoh ,  Masaya Nagata ,  Shuhei Tsuchimoto ,  Atsushi Yoshinouchi ,  Hiroshi Wada ,  Katsushi Okibayashi ,  Soji Ohhara

IPC分类号： H01L31/09 ,  H01L31/18 ,  B05D5/12 ,  H01L31/00

CPC分类号： H01L31/1832 ,  H01L31/09 ,  H01L31/1828 ,  Y02E10/543

摘要： A process for producing a photoelectric conversion film comprising heat-treating a coating (A) of a photoconductive material composed chiefly of at least one of CdSe, CdS, CdTe, CdS.sub.x Se.sub.1-x and CdS.sub.x Te.sub.1-x wherein x is a real number of less than 1, opposite from a coating (B) in proximity thereto, the coating (B) being made of a material composed chiefly of CdS and a Cd halide.

摘要翻译： 一种制造光电转换膜的方法，包括热处理主要由CdSe，CdS，CdTe，CdSxSe1-x和CdSxTe1-x中的至少一种组成的光电导材料的涂层（A），其中x是小于 如图1所示，与其附近的涂层（B）相反，涂层（B）由主要由CdS和Cd卤化物组成的材料制成。

公开(公告)号：US4939591A

公开(公告)日：1990-07-03

申请号：US209882

申请日：1988-06-22

申请人： Masataka Itoh ,  Atsushi Yoshinouchi ,  Satoshi Nishigaki ,  Takashi Nukii ,  Shuhei Tsuchimoto

发明人： Masataka Itoh ,  Atsushi Yoshinouchi ,  Satoshi Nishigaki ,  Takashi Nukii ,  Shuhei Tsuchimoto

IPC分类号： H04N1/028 ,  H01L27/146 ,  H04N1/031

CPC分类号： H04N1/0312 ,  H04N1/0311 ,  H04N1/0316

摘要： A contact-type image sensor comprising a light source that illuminates the manuscript to be read; photodetectors that convert the light reflected by the manuscript into an electrical signal; a substrate that is disposed between the photodetectors and the manuscript, a bundle of optical fibers being buried in the substrate; and wiring electrodes that are disposed on the top surface of the substrate corresponding to the light-emitting face of the bundle of optical fibers and that are disposed on the light-receiving surfaces of the photodetectors, wherein the photodetectors are disposed in such a manner that the light-receiving surfaces of the photodetectors face the light-emitting face of the bundle of optical fibers, the wiring electrodes disposed on the photodetectors being electrically bonded to the wiring electrodes disposed on the substrate.

公开(公告)号：US5004905A

公开(公告)日：1991-04-02

申请号：US432995

申请日：1989-11-08

申请人： Atsushi Yoshinouchi ,  Masataka Itoh ,  Shuhei Tsuchimoto

发明人： Atsushi Yoshinouchi ,  Masataka Itoh ,  Shuhei Tsuchimoto

IPC分类号： H04N1/031

CPC分类号： H04N1/02865 ,  H04N1/0311 ,  H04N1/0312 ,  H04N1/0316

摘要： A contact type image sensor comprising a light-detecting element array formed on a substrate, a light source for irradiating an original to be read, and an optical fiber array disposed between said light-detecting element array and said original to be read, said optical fiber array being formed by laminating an optical fiber array member that is composed of optical fibers not coated with an absorber on an optical fiber array member that is composed of optical fibers coated with an absorber, said optical fibers being disposed between said light-detecting element array and said original to be read, and said light source being disposed at the light emission side of said optical fiber array, thereby attaining a precise irradiation of an original with light from a light source and reliably shuts off the leakage to maintain excellent resolution characteristics of the sensor.

公开(公告)号：US4942481A

公开(公告)日：1990-07-17

申请号：US217681

申请日：1988-07-11

申请人： Atsushi Yoshinouchi ,  Masataka Itoh ,  Shuhei Tsuchimoto ,  Keiji Tarui ,  Satoshi Nishigaki

发明人： Atsushi Yoshinouchi ,  Masataka Itoh ,  Shuhei Tsuchimoto ,  Keiji Tarui ,  Satoshi Nishigaki

IPC分类号： H04N1/031 ,  H04N1/40

CPC分类号： H04N1/0312 ,  H04N1/0311 ,  H04N1/0316

摘要： A contact-type image sensor comprising a light source that illuminates the manuscript to be read; photodetectors that convert the light reflected by the manuscript into an electrical signal; a substrate that is disposed between the photodetectors and the manuscript; an optical fiber array that is constituted by a bundle of optical fibers that are buried in the substrate, the optical fiber array introducing the reflected light from the manuscript into the light-receiving surfaces of the photodetectors; and a light-absorbing substance that is disposed on the outer surface of each of the optical fibers, wherein the light-absorbing substance is disposed on the outer surface of each of the optical fibers, except for the region with a given length from the end of the optical fiber array that faces the manuscript.

公开(公告)号：US5403756A

公开(公告)日：1995-04-04

申请号：US158592

申请日：1993-11-24

申请人： Atsushi Yoshinouchi ,  Tatsuo Morita ,  Shuhei Tsuchimoto ,  Yasuaki Murata

发明人： Atsushi Yoshinouchi ,  Tatsuo Morita ,  Shuhei Tsuchimoto ,  Yasuaki Murata

IPC分类号： H01L21/30 ,  H01L21/3215 ,  H01L21/336 ,  H01L21/266

CPC分类号： H01L29/66757 ,  H01L21/3003 ,  H01L21/32155

摘要： A method for producing a polycrystalline semiconductor film is disclosed. The method includes the steps of: forming a semiconductor film on a substrate; forming a passivation film on the semiconductor film; exciting a mixed gas including hydrogen and at least one element selected from the group consisting of the III, IV, and V groups of the periodic table to generate hydrogen ions and ions of the at least one element; and implanting the hydrogen ions into the semiconductor film through the passivation film and simultaneously implanting the ions of the at least one element into the semiconductor film through the passivation film, thereby changing the semiconductor film into a polycrystalline semiconductor film having the at least one element.

摘要翻译： 公开了一种多晶半导体膜的制造方法。 该方法包括以下步骤：在衬底上形成半导体膜; 在半导体膜上形成钝化膜; 激发包括氢和选自周期表的III，IV和V族的至少一种元素的混合气体，以产生至少一种元素的氢离子和离子; 以及通过钝化膜将氢离子注入到半导体膜中，同时通过钝化膜将至少一种元素的离子注入到半导体膜中，从而将半导体膜改变成具有至少一种元素的多晶半导体膜。

公开(公告)号：US5393986A

公开(公告)日：1995-02-28

申请号：US942663

申请日：1992-09-09

申请人： Atsushi Yoshinouchi ,  Tatsuo Morita ,  Shuhei Tsuchimoto

发明人： Atsushi Yoshinouchi ,  Tatsuo Morita ,  Shuhei Tsuchimoto

IPC分类号： C23C14/48 ,  C23C14/54 ,  H01J37/05 ,  H01J37/244 ,  H01J37/317 ,  H01L21/265

CPC分类号： H01J37/244 ,  H01J37/3171 ,  H01J2237/24485 ,  H01J2237/2449 ,  H01J2237/24507 ,  H01J2237/24585

摘要： An ion implantation apparatus having a plasma source for generating ions, an ion accelerator for accelerating the generated ions, and a substrate holder provided on a position which the accelerated ions irradiate, wherein a current density of a desired kind of ions is measured by an electromagnetic ion energy analyzer having an electric field and a magnetic field, thereby controlling a dose of the ions.

摘要翻译： 具有用于产生离子的等离子体源的离子注入装置，用于加速产生的离子的离子加速器以及设置在加速离子照射的位置上的基板保持器，其中通过电磁测量所需种类的离子的电流密度 离子能量分析仪具有电场和磁场，从而控制离子的剂量。

公开(公告)号：US5126859A

公开(公告)日：1992-06-30

申请号：US536446

申请日：1990-06-12

申请人： Atsushi Yoshinouchi ,  Shuhei Tsuchimoto

发明人： Atsushi Yoshinouchi ,  Shuhei Tsuchimoto

IPC分类号： H04N1/028 ,  H01L27/14 ,  H04N1/031

CPC分类号： H04N1/0312 ,  H04N1/0311 ,  H04N1/0316

摘要： A contact type image sensor includes a light source for illuminating an original to be read and a substrate in which an optical fiber array member is assembled. The substrate is disposed such that one end of the optical fiber array member faces the original for transmitting a reflected light from the illuminated original therethrough. The contact type image sensor further includes a light detecting element array formed on the substrate and facing the other end of the optical fiber array member for receiving the transmitted light and converting the received light to an electrical signal. The contact type image sensor also includes a driving circuit disposed on the substrate and electrically connected to the light detecting element array for driving the light detecting element array.

公开(公告)号：US06890839B2

公开(公告)日：2005-05-10

申请号：US10257460

申请日：2002-01-15

申请人： Norihito Kawaguchi ,  Kenichiro Nishida ,  Mikito Ishii ,  Takehito Yagi ,  Miyuki Masaki ,  Atsushi Yoshinouchi ,  Koichiro Tanaka

发明人： Norihito Kawaguchi ,  Kenichiro Nishida ,  Mikito Ishii ,  Takehito Yagi ,  Miyuki Masaki ,  Atsushi Yoshinouchi ,  Koichiro Tanaka

IPC分类号： A61B18/20 ,  B23K26/06 ,  B23K26/073 ,  H01L21/268 ,  H01S3/00 ,  H01L21/00 ,  H01L21/20 ,  H01L21/26 ,  H01L21/331

CPC分类号： H01S3/005 ,  B23K26/0732

摘要： An object of the present invention is to provide a laser annealing method and apparatus capable of performing uniform beam emission. By means of the present invention, uniform beam application to a sample can be achieved because a linear cross-sectional configuration can be created in an optical system with a beam having a Gaussian distribution while areas of strong light intensity are avoided by rotating the beam from a laser light source at a prescribed angle by means of rotating means even when the beam pattern of the beam from the laser light source has a non-uniform intensity distribution.

摘要翻译： 本发明的一个目的是提供能够执行均匀的束发射的激光退火方法和装置。 通过本发明，可以实现对样品的均匀波束施加，因为可以在具有高斯分布的光束的光学系统中产生线性横截面配置，而通过将光束从 即使当来自激光光源的光束的光束图案具有不均匀的强度分布时，通过旋转装置以规定角度的激光光源。

公开(公告)号：US06621636B2

公开(公告)日：2003-09-16

申请号：US10026340

申请日：2001-12-21

申请人： Koichiro Tanaka ,  Setsuo Nakajima ,  Takehito Yagi ,  Mikito Ishii ,  Kenichiro Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

发明人： Koichiro Tanaka ,  Setsuo Nakajima ,  Takehito Yagi ,  Mikito Ishii ,  Kenichiro Nishida ,  Norihito Kawaguchi ,  Miyuki Masaki ,  Atsushi Yoshinouchi

IPC分类号： G02B2710

CPC分类号： G02B27/108 ,  G02B27/145

摘要： A laser irradiation apparatus having a low running cost compared to the conventional, and a laser irradiation method using the laser irradiation apparatus, are provided. Crystal grains having a size in the same order as, or greater than, conventional grains are formed. The cooling speed of a semiconductor film is made slower, and it becomes possible to form crystal grains having a grain size in the same order as, or greater than, the size of grains formed in the case of irradiating laser light having a long output time to the semiconductor film. This is achieved by delaying one laser light with respect to another laser light, combining the laser lights, and performing irradiation to the semiconductor film in the case of irradiating laser light using a solid state laser as a light source, which has a short output time.

公开(公告)号：US6130455A

公开(公告)日：2000-10-10

申请号：US825672

申请日：1997-03-20

申请人： Atsushi Yoshinouchi ,  Yasuaki Murata

发明人： Atsushi Yoshinouchi ,  Yasuaki Murata

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/20 ,  H01L21/336 ,  H01L29/786 ,  H01C29/78

CPC分类号： H01L29/66757 ,  H01L21/2022

摘要： A semiconductor device includes: a substrate; a line formed on the substrate; and a crystalline semiconductor film containing silicon connected to the line. The crystalline semiconductor film is crystallized by annealing where a constituting material of the line functions as a catalyst.

摘要翻译： 半导体器件包括：衬底; 形成在基板上的线; 以及含有与该线连接的硅的结晶半导体膜。 结晶半导体膜通过退火结晶，其中线的构成材料用作催化剂。