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    Method to fabricate a thin film non volatile memory device scalable to small sizes
    1.
    发明申请
    Method to fabricate a thin film non volatile memory device scalable to small sizes 失效
    制造可扩展到小尺寸的薄膜非易失性存储器件的方法

    公开(公告)号：US20060152960A1

    公开(公告)日：2006-07-13

    申请号：US11034637

    申请日：2005-01-13

    申请人： James Sheats

    发明人： James Sheats

    IPC分类号： G11C13/04

    CPC分类号： H01L51/0034 ,  H01L31/161 ,  H01L51/0077 ,  H01L51/0078 ,  H01L51/4206

    摘要： A thin film non volatile memory scalable to small sizes and its fabrication process are disclosed. The thin film memory comprises a thin film transistor control circuitry fabricated on a flexible substrate, together with an optoelectronic cross bar memory comprising a photoconducting material. The thin film non volatile memory can be used in RFID communication tag with the control circuitry further comprises wireless communication circuitry such as an antenna, a receiver, and a transmitter.

    摘要翻译： 公开了一种可扩展到小尺寸的薄膜非易失性存储器及其制造工艺。 薄膜存储器包括制造在柔性衬底上的薄膜晶体管控制电路，以及包括光导材料的光电横向存储器。 薄膜非易失性存储器可以用于RFID通信标签中，控制电路还包括诸如天线，接收器和发射器之类的无线通信电路。

    Electronic switch comprising a photosensitive semiconductor
    2.
    发明授权
    Electronic switch comprising a photosensitive semiconductor 失效
    电子开关，包括光敏半导体

    公开(公告)号：US5291056A

    公开(公告)日：1994-03-01

    申请号：US7949

    申请日：1993-01-26

    申请人： Peter A. Howson

    发明人： Peter A. Howson

    IPC分类号： H01L31/0296 ,  H01L31/09 ,  H01L31/16 ,  H01L31/18 ,  H03K17/78 ,  H01L27/14

    CPC分类号： H03K17/78 ,  H01L31/02966 ,  H01L31/09 ,  H01L31/161 ,  H01L31/162 ,  H01L31/1836 ,  Y02E10/50

    摘要： An electronic switch comprises a photosensitive semiconductor (1,11,12) and a light source (14,24) which, when actuated, illuminates the semiconductor and causes the latter to become conductive, the photosensitive semiconductor being a sintered mixture comprising, by weight, 58-72% of cadmium, 14.8-21% of selenium, 7-15% of tellurium, 7-12% of sulphur, 0.1-1% of chlorine, and 0.005-0.1% of copper.

    摘要翻译： 电子开关包括光敏半导体（1,11,12）和光源（14,24），当致动时，光源半导体照亮半导体并使其导致导电，光敏半导体是烧结混合物，其重量包括 ，58-72％的镉，14.8-21％的硒，7-15％的碲，7-12％的硫，0.1-1％的氯和0.005-0.1％的铜。

    Radiation Detector
    3.
    发明申请
    Radiation Detector 审中-公开
    辐射检测器

    公开(公告)号：US20080087832A1

    公开(公告)日：2008-04-17

    申请号：US11666463

    申请日：2005-09-30

    申请人： Kenji Sato ,  Toshinori Yoshimuta

    发明人： Kenji Sato ,  Toshinori Yoshimuta

    IPC分类号： H01L31/00

    CPC分类号： H01L31/115 ,  H01L27/14609 ,  H01L27/14632 ,  H01L27/14676 ,  H01L31/161 ,  H04N5/32

    摘要： [OBJECT] To provide a radiation detector that allows a substrate with a semiconductor layer, and a light emitting device, to be attached simply. [SOLUTION] A glass substrate 11 having an X-ray sensitive semiconductor 14 for converting incident X rays into carriers, and a planar light emitting mechanism 28 disposed on a side opposite from an X-ray incidence side of the glass substrate 11, are provided to remove carriers remaining in the X-ray sensitive semiconductor 14 by means of light emitted from the light emitting mechanism 28. Since a gel-like adhesive sheet 32 having light transmissivity is interposed between the glass substrate 11 and light emitting mechanism 28, and the light emitting mechanism 28 is planar, the glass substrate 11 and light emitting mechanism 28 can be attached simply. Since the adhesive sheet 32 interposed has light transmissivity, the light emitted from the light emitting mechanism 28 can be transmitted through the adhesive sheet 32, without being blocked, to irradiate the glass substrate 11.

    摘要翻译： 为了提供允许具有半导体层和发光器件的衬底简单地附接的辐射检测器。 [解决方案]具有用于将入射的X射线转换成载体的X射线敏感半导体14的玻璃基板11和布置在与玻璃基板11的X射线入射侧相反的一侧的平面发光机构28 以通过从发光机构28发射的光去除残留在X射线敏感半导体14中的载流子。 由于在玻璃基板11和发光机构28之间夹有具有透光性的凝胶状粘接片32，发光机构28为平面状，因此能够简单地安装玻璃基板11和发光机构28。 由于插入的粘合片32具有透光性，因此从发光机构28发射的光可以透过粘合片32而不被阻挡以照射玻璃基板11。

    Method to fabricate a thin film non volatile memory device scalable to small sizes
    4.
    发明授权
    Method to fabricate a thin film non volatile memory device scalable to small sizes 失效
    制造可扩展到小尺寸的薄膜非易失性存储器件的方法

    公开(公告)号：US07335551B2

    公开(公告)日：2008-02-26

    申请号：US11034637

    申请日：2005-01-13

    申请人： James Sheats

    发明人： James Sheats

    IPC分类号： H01L21/8242

    CPC分类号： H01L51/0034 ,  H01L31/161 ,  H01L51/0077 ,  H01L51/0078 ,  H01L51/4206

    摘要： A thin film non volatile memory scalable to small sizes and its fabrication process are disclosed. The thin film memory comprises a thin film transistor control circuitry fabricated on a flexible substrate, together with an optoelectronic cross bar memory comprising a photoconducting material. The thin film non volatile memory can be used in RFID communication tag with the control circuitry further comprises wireless communication circuitry such as an antenna, a receiver, and a transmitter.

    摘要翻译： 公开了一种可扩展到小尺寸的薄膜非易失性存储器及其制造工艺。 薄膜存储器包括制造在柔性衬底上的薄膜晶体管控制电路，以及包括光导材料的光电横向存储器。 薄膜非易失性存储器可以用于RFID通信标签中，控制电路还包括诸如天线，接收器和发射器之类的无线通信电路。

    Radiation imaging sensor
    5.
    发明授权
    Radiation imaging sensor 失效
    辐射成像传感器

    公开(公告)号：US5059794A

    公开(公告)日：1991-10-22

    申请号：US517382

    申请日：1990-05-01

    申请人： Tetsuhiko Takahashi ,  Kenichi Okajima ,  Ken Ueda

    发明人： Tetsuhiko Takahashi ,  Kenichi Okajima ,  Ken Ueda

    IPC分类号： G01T1/20 ,  G01T1/26 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/08 ,  H01L31/16

    CPC分类号： G01T1/2018 ,  G01T1/26 ,  H01L31/022466 ,  H01L31/02322 ,  H01L31/085 ,  H01L31/161

    摘要： A radiation imaging sensor including laminate structure of a phosphorescent layer, a light-transmissive electrode, a photoconductor layer, an insulating layer and an electrode, an applied voltage to the photoconductor layer through the light-transmissive electrode and the electrode is increased sufficiently so that light emitted from the phosphorescent member causes avalanche multiplicaton of the electrons and/or positive holes generated in the photoconductor layer by field sweep inside the photoconductor layer.

    摘要翻译： 包括磷光层，透光电极，感光体层，绝缘层和电极的层叠结构的放射线摄像传感器，通过透光电极和电极向感光体层施加的电压充分增加，使得 从磷光部件发出的光通过在感光体层内的场扫描引起在感光体层中产生的电子和/或空穴的雪崩乘法。

    Multiple gap optically activated switch
    8.
    发明授权
    Multiple gap optically activated switch 失效

    公开(公告)号：US4633286A

    公开(公告)日：1986-12-30

    申请号：US596966

    申请日：1984-04-05

    申请人： Lawrence J. Bovino

    发明人： Lawrence J. Bovino

    IPC分类号： H01L31/16 ,  H03K17/78 ,  H01L27/14

    CPC分类号： H01L31/161 ,  H03K17/78

    摘要： Solid state optically activated switches in which a plurality of spaced cacts are arranged in a line on one of the broad surfaces of a semiconductor wafer and one or more bridging electrodes are arranged on the opposite broad surface thereof. The two end contacts are the switch terminals. This arrangement directs the electric field and the load current into the bulk of the semiconductor in a zig-zag fashion to provide a high hold-off voltage and a short conduction path. Also the bridging electrode can be used as a control electrode. A novel circuit utilizing such switches is shown.

    Photo-coupler apparatus
    10.
    发明授权
    Photo-coupler apparatus 失效
    光耦合器装置

    公开(公告)号：US5514996A

    公开(公告)日：1996-05-07

    申请号：US160966

    申请日：1993-12-03

    申请人： Yoshiaki Aizawa

    发明人： Yoshiaki Aizawa

    IPC分类号： H01L31/12 ,  H01L31/16 ,  H01L31/00

    CPC分类号： H04B10/801 ,  H01L31/161

    摘要： A photo-coupler apparatus has a light emitting element in the primary side. The secondary side of this apparatus is comprised of a photoelectromotive diode array, a light sensitive impedance element series-connected to said array, a drive transistor, and at least one output MOSFET connected to the output terminals of this apparatus. The light sensitive impedance element comes into a large impedance state when an optical signal from the light emitting element is weak. In this case, the light sensitive impedance element generates a sufficient voltage to activate the drive transistor, in spite of the photocurrent being small. This results in an improvement of the dynamic sensitivity of this apparatus. When said optical signal is strong, the impedance element comes into a small impedance state, thus providing the MOSFET with a sufficient photo-current. This results in the shortening of switching times of the output MOSFET.

    摘要翻译： 光电耦合器装置具有初级侧的发光元件。 该装置的次级侧包括光电二极管阵列，与所述阵列串联连接的光敏阻抗元件，驱动晶体管和连接到该装置的输出端的至少一个输出MOSFET。 当来自发光元件的光信号较弱时，光敏阻抗元件进入大阻抗状态。 在这种情况下，尽管光电流很小，但是光敏阻抗元件产生足够的电压来激活驱动晶体管。 这导致该装置的动态灵敏度的改善。 当所述光信号强时，阻抗元件进入小阻抗状态，从而为MOSFET提供足够的光电流。 这导致输出MOSFET的开关时间缩短。