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39 条记录 (耗时 0.025 秒)

    Control of the power to the heater and the speed of movement of a crystal rod by control of the crystal rod diameter
    1.
    发明授权
    Control of the power to the heater and the speed of movement of a crystal rod by control of the crystal rod diameter 失效
    通过控制晶棒直径来控制加热器的功率和晶棒的运动速度

    公开(公告)号：US4876438A

    公开(公告)日：1989-10-24

    申请号：US203441

    申请日：1988-06-03

    申请人： Masataka Watanabe ,  Nobuhiro Ohhara ,  Kenichi Taguchi

    发明人： Masataka Watanabe ,  Nobuhiro Ohhara ,  Kenichi Taguchi

    IPC分类号： C30B13/28 ,  C30B13/30 ,  C30B15/26 ,  H01L21/208

    CPC分类号： C30B13/30 ,  C30B15/26 ,  Y10T117/1008 ,  Y10T117/1068

    摘要： An apparatus for use in a crystal manufacturing system based on a floating zone method or Czochralski method, adapted to control a quantity relating to the diameter of a crystal rod at the crystallization boundary, and designed to reduce hunting in the control of the quantity relating to the crystal diameter so as to prevent disturbance in crystallization and reduce irregularities in the surface of the crystal rod even if there is a discrepancy between a predetermined pattern and the ideal pattern with respect to the quantity to be controlled. The apparatus has a controller provided with: a program setter (72) adapted to output a quantity based on a predetermined pattern written in the controller in response to a detected value of the quantity relating to the crystal diameter at the crystallization boundary (24) or to the length of the crystal rod (18); a first adjuster (84) for performing a PI or PID control action in response to the difference between the detected value and the desired value of the quantity relating to the crystal diameter at the crystallization boundary (24); a second adjuster (76) for performing, in response to the difference between the detected value and the desired value of the quantity relating to the crystal diameter at the crystallization boundary (24), I.sup.2 control action for additional time-integration of a value obtained by time-integration of this difference; and a superposer (78) for outputting, as an adjustment amount, a value of linear combination between the program setter (72), the first adjuster (84), and the second adjuster (76).

    Method of controlling floating zone
    2.
    发明授权
    Method of controlling floating zone 失效
    控制浮动区域的方法

    公开(公告)号：US4931945A

    公开(公告)日：1990-06-05

    申请号：US280695

    申请日：1988-12-05

    申请人： Kenichi Taguchi ,  Masataka Watanabe

    发明人： Kenichi Taguchi ,  Masataka Watanabe

    IPC分类号： H01L21/18 ,  C30B13/28 ,  C30B13/30 ,  H01L21/208

    CPC分类号： C30B13/30 ,  Y10T117/1008

    摘要： A method of controlling a floating zone applied to a crystal manufacturing system based on the FZ method and designed to enable the diameter at the crystallization boundary and the axial length of the floating zone or other similar quantities to desired values, in which a floating zone (20) is imaged with an imaging device (30); geometric quantities of the floating zone is measured from the image thereby obtained; the electric power (P) supplied to an induction heating coil (12) and the speed (V.sub.p) at which a raw-material rod (16) is moved relative to the induction heating coil so that the geometric quantities become equal to desired values. The geometric values include one Z.sub.i of the axial length of the floating zone, the distance (L) between the induction heating coil and a crystallization boundary (24) and the diameter (D.sub.n) of a melt neck portion located on the side of the crystallization boundary at a predetermined distance from the induction heating coil, and one D.sub.i of the diameter (D.sub.s) of the crystallization boundary and the diameter (D.sub.m) of a melt shoulder portion (34) located between the crystallization boundary and the restricted portions at a predetermined distance (h.sub.m) from the crystallization boundary.

    Angular substrates
    3.
    发明授权
    Angular substrates 有权

    公开(公告)号：US07122280B2

    公开(公告)日：2006-10-17

    申请号：US10214113

    申请日：2002-08-08

    申请人： Jiro Moriya ,  Masataka Watanabe ,  Satoshi Okazaki

    发明人： Jiro Moriya ,  Masataka Watanabe ,  Satoshi Okazaki

    IPC分类号： H01L21/44

    CPC分类号： H01L21/30625 ,  G03F1/60 ,  H01L21/02035 ,  Y10T428/12528

    摘要： A square substrate has a pair of opposed major surfaces and peripheral end faces therebetween, wherein a tapered edge portion is disposed between the peripheral end face and each major surface to define an inner boundary with the major surface, and has a width of 0.2–1 mm from the peripheral end face. Both or either one of the major surfaces of the substrate has a flatness of up to 0.5 μm in an outside region of the substrate that extends between a position spaced 3 mm inward from the peripheral end face and the inner boundary of the tapered edge portion.

    Shared memory control system and shared memory control method
    4.
    发明授权
    Shared memory control system and shared memory control method 失效
    共享内存控制系统和共享内存控制方式

    公开(公告)号：US06457106B1

    公开(公告)日：2002-09-24

    申请号：US09120239

    申请日：1998-07-22

    申请人： Masataka Watanabe

    发明人： Masataka Watanabe

    IPC分类号： G06F1200

    CPC分类号： G06F13/161

    摘要： In a current shared memory cycle, the memory access band value of each bus master is calculated at any time and discriminated to determine the next memory cycle control before completion of the current shared memory cycle, so that the minimum memory access band value required by each bus master is maintained with the result that the shared memory can be efficiently utilized. Thus, there is provided a shared memory control apparatus and a shared memory control method, capable of realizing a memory control of an excellent efficiency by maintaining the memory access band width per unit time, required by the master.

    摘要翻译： 在当前的共享存储器周期中，每个总线主机的存储器访问频带值在任何时间被计算，并且在完成当前的共享存储器周期之前被辨别以确定下一个存储器周期控制，使得每个总线主机所需的最小存储器访问频带值 总线主机被维护，结果可以有效地利用共享存储器。 因此，提供了一种共享存储器控制装置和共享存储器控制方法，其能够通过维持主机所需的每单位时间的存储器访问带宽来实现具有优异效率的存储器控​​制。

    Compound semiconductor epitaxial wafer
    6.
    发明授权
    Compound semiconductor epitaxial wafer 失效
    化合物半导体外延片

    公开(公告)号：US6057592A

    公开(公告)日：2000-05-02

    申请号：US101431

    申请日：1998-10-21

    申请人： Masataka Watanabe ,  Tsuneyuki Kaise ,  Masayuki Shinohara ,  Masahisa Endou ,  Tohru Takahashi

    发明人： Masataka Watanabe ,  Tsuneyuki Kaise ,  Masayuki Shinohara ,  Masahisa Endou ,  Tohru Takahashi

    IPC分类号： H01L21/20 ,  H01L21/203 ,  H01L21/205 ,  H01L33/30 ,  H01L29/167

    CPC分类号： H01L33/30 ,  H01L33/12

    摘要： At the time of forming an alloy composition gradient layer 4 of gallium arsenide phosphide GaAs.sub.x P.sub.1-x having an arsenic alloy composition x changed in such a range as not to exceed a predetermined alloy composition a with an increase of a layer thickness d between a GaP layer 3 and a composition constant layer 5 of gallium arsenide phosphide GaAs.sub.a P.sub.1-a having the predetermined alloy composition a to be grown above the GaP layer; the alloy composition x is abruptly ascended as in composition ascending zones C11 to C13 with the ascended thickness d of an epitaxial layer and then descended as in crystal stabilizing zones S11 to S13 in such a range as not to cancel the previous ascent amount. One or more combinations of such ascent and descent in the alloy composition are repeated to form as distributed in the alloy composition gradient layer 4, and then the alloy composition x is ascended to the predetermined alloy composition a. Thereby there is obtained a compound semiconductor epitaxial wafer which can effectively eliminate stresses caused by lattice mismatching, can be made thinner with an excellent productivity, and can have a high luminance due to employment of a reflective layer.

    摘要翻译： PCT No.PCT / JP97 / 00050 Sec。 371日期：1998年10月21日 102（e）日期1998年10月21日PCT 1997年1月13日PCT PCT。 公开号WO97 / 25747 日期1997年7月17日在形成具有砷合金组成x的砷化镓磷化镓GaAs xP 1-x的合金组成梯度层4的时间在不超过预定合金组成a的范围内变化，层厚增加 在GaP层上方生长具有规定的合金组成a的GaP层3和砷化磷化镓GaAsaP1-a的组成恒定层5之间的d; 如同外延层的上升厚度d的组成上升区域C11至C13中的合金组成x突然上升，然后如在晶体稳定区域S11至S13中下降到不消除先前上升量的范围内。 重复合金组合物中这种上升和下降的一种或多种组合，以形成分布在合金组成梯度层4中，然后合金组合物x上升到预定的合金组成a。 由此，可以获得能有效消除由晶格失配引起的应力的化合物半导体外延晶片，能够以优异的生产率变薄，并且由于使用反射层而具有高的亮度。

    Method of manufacturing wrinkled sheet tobacco
    7.
    发明授权
    Method of manufacturing wrinkled sheet tobacco 失效
    起皱片烟草的制造方法

    公开(公告)号：US4770194A

    公开(公告)日：1988-09-13

    申请号：US932513

    申请日：1986-11-07

    申请人： Yukinari Ohashi ,  Norio Furuya ,  Satoru Kataoka ,  Masataka Watanabe

    发明人： Yukinari Ohashi ,  Norio Furuya ,  Satoru Kataoka ,  Masataka Watanabe

    IPC分类号： A24B3/14 ,  B21B27/00

    CPC分类号： B21B27/00 ,  A24B3/14

    摘要： In a method of manufacturing wrinkled sheet tobacco by wetting a raw material powder containing tobacco with water, extruding the resultant wet powder through a gap between a pair of rollers, and separating sheet tobacco attached to the surface of one roller with a doctor knife, one of the substances selected from those enumerated below is added to the raw material powder in an amount specified below: (1) 4 to 10% by weight of an .alpha.-starch or propylene glycol alginate ester, (2) 4 to 11% by weight of a hydrolyzed starch having a molecular weight of 100,000 to 900,000, gum arabic, a carboxymethyl cellulose salt having a molecular weight of 10,000 to 20,000, or a high methoxyl pectin having a degree of methoxylation of 7 to 17% and a degree of esterification of 62 to 77%, and (3) a mixture of 1.9 to 7.9% by weight of a 4,4,6-triglucosaccharide polymer and 1.3 to 3.2% by weight of sodium carboxymethyl cellulose.

    摘要翻译： PCT No.PCT / JP85 / 00138 Sec。 371日期：1986年11月7日 102（e）日期1986年11月7日PCT 1985年3月22日PCT公布。 公开号WO86 / 05366 日期：1986年9月25日。在通过用水浸渍含烟草的原料粉末来制造皱纹片烟草的方法中，通过一对辊之间的间隙挤出所得湿粉末，并分离附着在一个表面上的片状烟草 使用刮刀的辊子，将选自下列物质的物质以下列数量加入到原料粉末中：（1）4-10重量％的α-淀粉或丙二醇藻酸酯，（2 ）4〜11重量％的分子量为100,000〜900,000的水解淀粉，阿拉伯胶，分子量为10,000〜20,000的羧甲基纤维素盐，甲氧基化度为7〜17的高甲氧基果胶 ％，酯化度为62〜77％，（3）1.9〜7.9重量％的4,4,6-三糖聚合物和1.3〜3.2重量％的羧甲基纤维素钠的混合物。

    Method for manufacturing compound semiconductor substrate, compound semiconductor substrate and light emitting device
    8.
    发明授权
    Method for manufacturing compound semiconductor substrate, compound semiconductor substrate and light emitting device 有权
    制造化合物半导体衬底，化合物半导体衬底和发光器件的方法

    公开(公告)号：US08003421B2

    公开(公告)日：2011-08-23

    申请号：US12811940

    申请日：2009-01-14

    申请人： Yukari Suzuki ,  Jun Ikeda ,  Masataka Watanabe

    发明人： Yukari Suzuki ,  Jun Ikeda ,  Masataka Watanabe

    IPC分类号： H01L21/00

    CPC分类号： C30B25/18 ,  C30B29/40 ,  C30B29/44 ,  C30B33/02 ,  C30B33/06 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02658 ,  H01L33/0062

    摘要： A method for manufacturing a compound semiconductor substrate includes at least the processes of epitaxially growing a quaternary light emitting layer composed of AlGaInP on a GaAs substrate; vapor-phase growing a p-type GaP window layer on a first main surface of the quaternary light emitting layer, the first main surface being opposite to the GaAs substrate; removing the GaAs substrate; and epitaxially growing an n-type GaP window layer on a second main surface of the light emitting layer, the second main surface being located at a side where the GaAs substrate is removed. The method includes the process of performing a heat treatment under a hydrogen atmosphere containing ammonia after the process of removing the GaAs substrate and before the process of epitaxially growing the n-type GaP window layer.

    摘要翻译： 至少在GaAs衬底上外延生长由AlGaInP构成的四元发光层的方法， 在四元发光层的第一主表面上气相生长p型GaP窗口层，第一主表面与GaAs衬底相对; 去除GaAs衬底; 并且在所述发光层的第二主表面上外延生长n型GaP窗口层，所述第二主表面位于所述GaAs衬底被去除的一侧。 该方法包括在除去GaAs衬底的工艺之后和在外延生长n型GaP窗口层的过程之前，在含有氨的氢气氛下进行热处理。