摘要:
According to one embodiment, an imprint method comprises coating a photo-curable organic material on a film to be processed, bringing a concave-convex pattern of a template into contact with the photo-curable organic material, applying a force to the template in such a state that the template is brought into contact with the photo-curable organic material, curing the photo-curable organic material by irradiating light onto the photo-curable organic material, in such a state that the template is brought into contact with the photo-curable organic material, and releasing the template from the photo-curable organic material after the light irradiation. The force applied to the template corresponds to a gap between a surface of the film to be processed and the template.
摘要:
According to one embodiment, an imprint method comprises coating a photo-curable organic material on a film to be processed, bringing a concave-convex pattern of a template into contact with the photo-curable organic material, applying a force to the template in such a state that the template is brought into contact with the photo-curable organic material, curing the photo-curable organic material by irradiating light onto the photo-curable organic material, in such a state that the template is brought into contact with the photo-curable organic material, and releasing the template from the photo-curable organic material after the light irradiation. The force applied to the template corresponds to a gap between a surface of the film to be processed and the template.
摘要:
This invention discloses an immersion exposure method which executes immersion exposure for an exposure target film by transferring an image of a pattern formed on a mask onto the exposure target film through an immersion medium. A first vapor pressure as the target value in an immersion exposure atmosphere which surrounds the immersion medium is set. A second vapor pressure in the immersion exposure atmosphere is measured. The first vapor pressure is compared with the second vapor pressure. Whether to adjust the vapor pressure in the immersion exposure atmosphere is selected in accordance with the comparison result.
摘要:
According to one embodiment, a template for imprint lithography includes a transparent substrate having a pattern with a recess portion and a protruding portion, and a light-shielding portion formed on a bottom surface of the recess portion and on a top surface of the protruding portion. A side wall of the protruding portion is inclined.
摘要:
This invention discloses an immersion exposure method which executes immersion exposure for an exposure target film by transferring an image of a pattern formed on a mask onto the exposure target film through an immersion medium. A first vapor pressure as the target value in an immersion exposure atmosphere which surrounds the immersion medium is set. A second vapor pressure in the immersion exposure atmosphere is measured. The first vapor pressure is compared with the second vapor pressure. Whether to adjust the vapor pressure in the immersion exposure atmosphere is selected in accordance with the comparison result.
摘要:
A method of processing a substrate according to an embodiment includes carrying out an imprint processing that transfer a pattern formed in a template onto a flowable material disposed on a semiconductor substrate so as to obtain a transfer pattern, and at least one processing selected from the group consisting of an inspection processing of an semiconductor substrate, an applying processing of a separating material and an inspection-cleaning processing in parallel in the same processing chamber.
摘要:
An exposure method includes setting a photo mask into an exposure apparatus. The exposure apparatus includes an opening/closing unit configured to block a part of exposure light from a light source to the wafer. The photo mask having a product area in which a pattern to be used when a central part of a wafer is exposed is formed and peripheral exposure areas in each of which a pattern to be used when a peripheral area is exposed is formed. The peripheral exposure areas are formed to have a plurality of types of pattern densities. Then, a peripheral part of the wafer exposed. When exposing, the opening/closing unit is opened such that one or more of exposed photo mask areas selected from among the peripheral exposure areas has a pattern density corresponding to a shot position of the peripheral part.
摘要:
An immersion exposure apparatus includes a placement unit on which a substrate is to be placed, the substrate including a body to be processed and a resist film on the body, a projection optical system including a projection lens, a liquid supply unit including an immersion nozzle, a measurement unit for measuring positions of alignment marks Mi (i=1, 2, . . . ) on the substrate, and a control unit for controlling a position of the placement unit on which the substrate is placed so that a pattern image of the photo mask is projected onto a predetermined position on the substrate when immersion exposure to the substrate is performed based on a measurement value acquired by the measurement unit and a correction value for correcting a measurement error resulting from a change of a measurement environment caused during measurement of alignment marks Mi.
摘要:
There is disclosed an immersion exposure method of carrying out an exposure process in a state that liquid is at least partly filled between a substrate to be exposed and a projection optical system of an exposure apparatus carrying out the exposure process, comprising carrying out a process of making large a contact angle to the liquid with at least outer peripheral portion of a main surface of the substrate compared with a contact angle to the liquid with an area adjacent to the outer peripheral portion of the substrate, which area is a part of a surface of a substrate supporting side of a substrate support member supporting the substrate included in the exposure apparatus, and carrying out the exposure process.
摘要:
An exposure system includes, (a) an exposure apparatus, and (b) a displacement correction apparatus having a curvature information storage unit configured to store curvature information of a reticle; a displacement information calculation unit configured to calculate displacement generated in the reticle being fixed on a reticle stage of an exposure apparatus based on the curvature information; and a correction information calculation unit configured to calculate correction information for correcting a projection lens of the exposure apparatus based on the displacement.