公开(公告)号：US08026535B2

公开(公告)日：2011-09-27

申请号：US12019146

申请日：2008-01-24

申请人： Masatoshi Wakagi ,  Junichi Hanna

发明人： Masatoshi Wakagi ,  Junichi Hanna

IPC分类号： H01L21/28 ,  H01L29/78

CPC分类号： H01L29/78684 ,  H01L21/02532 ,  H01L21/0262 ,  H01L27/1214 ,  H01L27/3262 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78696

摘要： In a thin film transistor, a semiconductor layer containing Si and Ge is applied, a Ge concentration of this semiconductor layer is high at the side of the insulating substrate, and crystalline orientation of the semiconductor layer indicates a random orientation in a region of 20 nm from the side of the insulating substrate, and indicates a (111), (110) or (100) preferential orientation at the film surface side of the semiconductor layer.

摘要翻译： 在薄膜晶体管中，施加包含Si和Ge的半导体层，该半导体层的Ge浓度在绝缘基板的侧面高，并且半导体层的晶体取向指示在20nm的区域中的随机取向 并且表示在半导体层的膜表面侧的（111），（110）或（100）优先取向。

公开(公告)号：US08344382B2

公开(公告)日：2013-01-01

申请号：US13001428

申请日：2009-06-26

申请人： Junichi Hanna ,  Isao Suzumura ,  Mieko Matsumura ,  Mutsuko Hatano ,  Kenichi Onisawa ,  Masatoshi Wakagi ,  Etsuko Nishimura ,  Akiko Kagatsume

发明人： Junichi Hanna ,  Isao Suzumura ,  Mieko Matsumura ,  Mutsuko Hatano ,  Kenichi Onisawa ,  Masatoshi Wakagi ,  Etsuko Nishimura ,  Akiko Kagatsume

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L27/1277 ,  H01L27/1281 ,  H01L27/3262 ,  H01L29/66742 ,  H01L29/78687

摘要： Provided is a method of promoting a deposition of semiconductor crystal nuclei on an insulating film such as a silicon oxide film even at a low temperature of 450° C. or lower in a reactive thermal CVD method. As one means thereof, a first semiconductor film is formed on an insulating substrate, and then semiconductor crystal nuclei are formed on parts of the first semiconductor film and simultaneously the first semiconductor film other than that in forming regions of the semiconductor crystal nuclei and their peripheries is removed by etching. Thereafter, a second semiconductor film is formed with using the semiconductor crystal nuclei as seeds.

摘要翻译： 提供了即使在450℃以下的低温反应性热CVD法中也能够使半导体晶体核沉积在氧化硅膜等绝缘膜上的方法。 作为其一种方法，在绝缘基板上形成第一半导体膜，然后在第一半导体膜的部分上形成半导体晶体核，并且同时形成第一半导体膜，而不是形成半导体晶体核的区域及其周边 通过蚀刻去除。 此后，使用半导体晶体核作为晶种形成第二半导体膜。

公开(公告)号：US20110108841A1

公开(公告)日：2011-05-12

申请号：US13001428

申请日：2009-06-26

申请人： Junichi Hanna ,  Isao Suzumura ,  Mieko Matsumura ,  Mutsuko Hatano ,  Kenichi Onisawa ,  Masatoshi Wakagi ,  Etsuko Nishimura ,  Akiko Kagatsume

发明人： Junichi Hanna ,  Isao Suzumura ,  Mieko Matsumura ,  Mutsuko Hatano ,  Kenichi Onisawa ,  Masatoshi Wakagi ,  Etsuko Nishimura ,  Akiko Kagatsume

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L27/1277 ,  H01L27/1281 ,  H01L27/3262 ,  H01L29/66742 ,  H01L29/78687

摘要： Provided is a method of promoting a deposition of semiconductor crystal nuclei on an insulating film such as a silicon oxide film even at a low temperature of 450° C. or lower in a reactive thermal CVD method. As one means thereof, a first semiconductor film is formed on an insulating substrate, and then semiconductor crystal nuclei are formed on parts of the first semiconductor film and simultaneously the first semiconductor film other than that in forming regions of the semiconductor crystal nuclei and their peripheries is removed by etching. Thereafter, a second semiconductor film is formed with using the semiconductor crystal nuclei as seeds.

摘要翻译： 提供了即使在450℃以下的低温反应性热CVD法中也能够使半导体晶体核沉积在氧化硅膜等绝缘膜上的方法。 作为其一种方法，在绝缘基板上形成第一半导体膜，然后在第一半导体膜的部分上形成半导体晶体核，并且同时形成第一半导体膜，而不是形成半导体晶体核的区域及其周边 通过蚀刻去除。 此后，使用半导体晶体核作为晶种形成第二半导体膜。

公开(公告)号：US20100214524A1

公开(公告)日：2010-08-26

申请号：US12662708

申请日：2010-04-29

申请人： Kazuhiko Yanagawa ,  Yasushi Iwakabe ,  Yoshiaki Nakayoshi ,  Masatoshi Wakagi

发明人： Kazuhiko Yanagawa ,  Yasushi Iwakabe ,  Yoshiaki Nakayoshi ,  Masatoshi Wakagi

IPC分类号： G02F1/1339

CPC分类号： G02F1/13306 ,  G02F1/1333 ,  G02F1/133305 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/1339 ,  G02F1/13394 ,  G02F1/1341 ,  G02F1/134363 ,  G02F1/1345 ,  G02F1/13452 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133334 ,  G02F2001/133354 ,  G02F2001/13398 ,  G02F2001/13629 ,  G02F2001/136295 ,  G02F2201/503 ,  G02F2202/02

摘要： There is provided a liquid crystal display device in which light leaks near spacers are prevented. The liquid crystal display device controls the optical transmissivity of a liquid crystal layer interposed between substrates disposed in opposition to each other, by means of an electric field generated in the layer-thickness direction of the liquid crystal layer, includes spacers formed on a liquid-crystal-side surface of one of the substrates, signal lines formed on a liquid-crystal-side surface of the other substrate, an insulating film formed to cover the signal lines, and electrodes formed on the upper surface of the insulating film, each of which serves as one electrode contributing to control of the optical transmissivity of the liquid crystal layer. Each of the spacers has a vertex surface disposed in opposition to any of the signal lines, and a portion of each of the electrodes is extended to the upper surface of a corresponding one of the signal lines and the extended portion is opposed to a part of the vertex surface of a spacer disposed in opposition to the corresponding one of the signal lines.

公开(公告)号：US07542121B2

公开(公告)日：2009-06-02

申请号：US11979717

申请日：2007-11-07

申请人： Kazuhiko Yanagawa ,  Yasushi Iwakabe ,  Yoshiaki Nakayoshi ,  Masatoshi Wakagi

发明人： Kazuhiko Yanagawa ,  Yasushi Iwakabe ,  Yoshiaki Nakayoshi ,  Masatoshi Wakagi

IPC分类号： G02F1/1345

CPC分类号： G02F1/13306 ,  G02F1/1333 ,  G02F1/133305 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/1339 ,  G02F1/13394 ,  G02F1/1341 ,  G02F1/134363 ,  G02F1/1345 ,  G02F1/13452 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133334 ,  G02F2001/133354 ,  G02F2001/13398 ,  G02F2001/13629 ,  G02F2001/136295 ,  G02F2201/503 ,  G02F2202/02

摘要： There is provided a liquid crystal display device in which light leaks near spacers are prevented. The liquid crystal display device controls the optical transmissivity of a liquid crystal layer interposed between substrates disposed in opposition to each other, by means of an electric field generated in the layer-thickness direction of the liquid crystal layer, includes spacers formed on a liquid-crystal-side surface of one of the substrates, signal lines formed on a liquid-crystal-side surface of the other substrate, an insulating film formed to cover the signal lines, and electrodes formed on the upper surface of the insulating film, each of which serves as one electrode contributing to control of the optical transmissivity of the liquid crystal layer. Each of the spacers has a vertex surface disposed in opposition to any of the signal lines, and a portion of each of the electrodes is extended to the upper surface of a corresponding one of the signal lines and the extended portion is opposed to a part of the vertex surface of a spacer disposed in opposition to the corresponding one of the signal lines.

公开(公告)号：US07521716B2

公开(公告)日：2009-04-21

申请号：US10569834

申请日：2004-08-18

申请人： Masahiko Ando ,  Masaya Adachi ,  Hiroshi Sasaki ,  Masatoshi Wakagi

发明人： Masahiko Ando ,  Masaya Adachi ,  Hiroshi Sasaki ,  Masatoshi Wakagi

IPC分类号： H01L29/04

CPC分类号： H01L51/0541 ,  H01L27/124 ,  H01L27/1292 ,  H01L29/66765 ,  H01L29/78678 ,  H01L51/0021

摘要： Using a lower electrode as a photomask, a lyophobic region having generally the same pattern as that of the lower electrode and a lyophilic region having a pattern which is generally the inversion of the lower electrode pattern are formed on an insulating film. A conductive ink is applied to the lyophobic region and baked. Thus, an upper electrode having a pattern which is generally the inversion of the lower electrode pattern is formed in a self-alignment manner. Therefore no misalignment occurs even if a printing method is used. Thus, a semiconductor device such as an active-matrix thin-film transistor substrate can be fabricated by using a printing method.

摘要翻译： 使用下部电极作为光掩模，在绝缘膜上形成通常具有与下部电极相同图案的疏液区域和具有通常为下部电极图案的反转的图案的亲液性区域。 将导电油墨施加到疏液区域并烘烤。 因此，具有通常为下电极图案的反转的图案的上电极以自对准方式形成。 因此，即使使用打印方法也不会发生错位。 因此，可以通过使用印刷方法来制造诸如有源矩阵薄膜晶体管基板的半导体器件。

公开(公告)号：US07394095B2

公开(公告)日：2008-07-01

申请号：US11501489

申请日：2006-08-08

申请人： Masahiko Ando ,  Masaya Adachi ,  Hiroshi Sasaki ,  Masatoshi Wakagi

发明人： Masahiko Ando ,  Masaya Adachi ,  Hiroshi Sasaki ,  Masatoshi Wakagi

IPC分类号： H01L29/08

CPC分类号： H01L51/0541 ,  H01L27/124 ,  H01L27/1292 ,  H01L29/66765 ,  H01L29/78678 ,  H01L51/0021

摘要： In the present invention, a lower electrode is utilized as a photomask to form a liquid-repellent region having a generally same pattern shape as that of the lower electrode and a liquid-attracting region having a generally reversed pattern shape on an insulating film. A conductive ink is coated and calcined in the liquid-attracting region to form an upper electrode having a generally reversed pattern shape to the lower electrode in a self-aligned manner, eliminating the occurrence of misregistration even when a printing method is used. Consequently, semiconductor devices such as an active matrix thin film transistor substrate can be formed using a printing method.

摘要翻译： 在本发明中，下电极用作光掩模，以形成具有与下电极大致相同图案形状的疏液区域和在绝缘膜上具有大致反转图案形状的吸液区域。 导电油墨在吸液区域被涂覆和煅烧，以自对准的方式形成具有与下电极大致相反的图案形状的上电极，消除了即使使用打印方法时发生配准。 因此，可以使用印刷方法形成诸如有源矩阵薄膜晶体管基板的半导体器件。

公开(公告)号：US20080074604A1

公开(公告)日：2008-03-27

申请号：US11979717

申请日：2007-11-07

申请人： Kazuhiko Yanagawa ,  Yasushi Iwakabe ,  Yoshiaki Nakayoshi ,  Masatoshi Wakagi

发明人： Kazuhiko Yanagawa ,  Yasushi Iwakabe ,  Yoshiaki Nakayoshi ,  Masatoshi Wakagi

IPC分类号： G02F1/1339

CPC分类号： G02F1/13306 ,  G02F1/1333 ,  G02F1/133305 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/1339 ,  G02F1/13394 ,  G02F1/1341 ,  G02F1/134363 ,  G02F1/1345 ,  G02F1/13452 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133334 ,  G02F2001/133354 ,  G02F2001/13398 ,  G02F2001/13629 ,  G02F2001/136295 ,  G02F2201/503 ,  G02F2202/02

摘要： There is provided a liquid crystal display device in which light leaks near spacers are prevented. The liquid crystal display device controls the optical transmissivity of a liquid crystal layer interposed between substrates disposed in opposition to each other, by means of an electric field generated in the layer-thickness direction of the liquid crystal layer, includes spacers formed on a liquid-crystal-side surface of one of the substrates, signal lines formed on a liquid-crystal-side surface of the other substrate, an insulating film formed to cover the signal lines, and electrodes formed on the upper surface of the insulating film, each of which serves as one electrode contributing to control of the optical transmissivity of the liquid crystal layer. Each of the spacers has a vertex surface disposed in opposition to any of the signal lines, and a portion of each of the electrodes is extended to the upper surface of a corresponding one of the signal lines and the extended portion is opposed to a part of the vertex surface of a spacer disposed in opposition to the corresponding one of the signal lines.

公开(公告)号：US07202496B2

公开(公告)日：2007-04-10

申请号：US10970224

申请日：2004-10-21

申请人： Masahiko Ando ,  Masatoshi Wakagi ,  Hiroshi Sasaki

发明人： Masahiko Ando ,  Masatoshi Wakagi ,  Hiroshi Sasaki

IPC分类号： H01L35/24 ,  H01L21/4763

CPC分类号： H01L51/0545 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0012 ,  H01L51/0021 ,  H01L51/0023 ,  H01L51/0036 ,  H01L51/0039 ,  H01L51/0533

摘要： The present method prevents malfunctions in switching caused by a light leakage current in an active matrix type thin film transistor substrate for a liquid crystal display and prevents display failures, by selectively disposing a self assembled monolayer film in a gate electrode-projected region of the surface of an insulator film with high definition, and by selectively improving the orientation order of an organic semiconductor film only in the gate electrode-projected region without improving the order at an irradiated portion with light outside the gate electrode-projected region.

摘要翻译： 本方法通过在表面的栅极电极投影区域中选择性地配置自组装单层膜来防止由液晶显示器的有源矩阵型薄膜晶体管基板中的漏光电流引起的切换中的故障，并且防止显示故障 具有高清晰度的绝缘体膜，并且仅通过选择性地改善栅极电极投影区域中的有机半导体膜的取向顺序，而不改善栅极电极投影区域外的光的照射部分的阶数。

公开(公告)号：US20050231457A1

公开(公告)日：2005-10-20

申请号：US11053256

申请日：2005-02-09

申请人： Tsunenori Yamamoto ,  Daisuke Kajita ,  Ikuo Hiyama ,  Akitoyo Konno ,  Tatsuki Inuzuka ,  Masatoshi Wakagi

发明人： Tsunenori Yamamoto ,  Daisuke Kajita ,  Ikuo Hiyama ,  Akitoyo Konno ,  Tatsuki Inuzuka ,  Masatoshi Wakagi

IPC分类号： G02F1/13357 ,  G02F1/133 ,  G09G3/20 ,  G09G3/34 ,  G09G3/36 ,  H04N5/66

CPC分类号： G09G3/3413 ,  G02F2001/133601 ,  G09G2300/0491 ,  G09G2310/0235 ,  G09G2320/0247 ,  G09G2320/0257 ,  G09G2320/0261 ,  G09G2320/0276 ,  G09G2320/0626 ,  G09G2320/064 ,  G09G2320/0653 ,  G09G2320/103 ,  G09G2360/144 ,  G09G2360/145 ,  G09G2360/16

摘要： The liquid crystal display apparatus includes a liquid crystal display, a backlight unit for emitting rays of light of three or more colors, the ray of each color being controlled, and applying these rays of light onto the liquid crystal display. A controller is further provided for controlling a change of display data of each color of the liquid crystal display and an emitted light quantity of each color of the backlight unit at a time, based on a video signal being inputted for displaying the corresponding image and an output signal sent from an ambient light sensor for sensing ambient light.

摘要翻译： 液晶显示装置包括液晶显示器，用于发射三种或更多种颜色的光线的背光单元，每种颜色的光线被控制，并将这些光线施加到液晶显示器上。 还提供控制器，用于基于输入的视频信号来控制液晶显示器的每种颜色的显示数据的变化和背光单元的每种颜色的发射光量，以便显示相应的图像，以及 从环境光传感器发送的用于感测环境光的输出信号。