公开(公告)号：US4670320A

公开(公告)日：1987-06-02

申请号：US855402

申请日：1986-04-24

申请人： Masayoshi Yamaguchi ,  Kazunori Meguro ,  Shuitsu Matsuo ,  Yasumi Sasaki

发明人： Masayoshi Yamaguchi ,  Kazunori Meguro ,  Shuitsu Matsuo ,  Yasumi Sasaki

IPC分类号： C04B35/10 ,  C04B35/65 ,  C04B35/80 ,  C04B38/00 ,  C04B38/04 ,  B32B3/00 ,  B32B5/14 ,  B32B19/00 ,  B44C1/22

CPC分类号： C04B38/0051 ,  C04B35/10 ,  C04B35/65 ,  C04B35/80 ,  C04B38/04 ,  Y10T428/24355 ,  Y10T428/249956 ,  Y10T428/249957 ,  Y10T428/24997 ,  Y10T428/31

摘要： An alumina formed body comprising many long alumina elements oriented in random directions and interconnected so as to constitute a porous matrix comprising a large number of fine pores. Such a body is manufactured by reacting a glass-formed body comprising silica with aluminum at high temperature to form an alumina composite material comprising alumina, aluminum and silicon and removing aluminum and silicon from the aluminum composite material.

摘要翻译： 一种氧化铝成形体，包括沿随机方向取向的多个长的氧化铝元件，并且相互连接，从而构成包含大量细孔的多孔基体。 通过使包含二氧化硅的玻璃成形体与铝在高温下反应形成包含氧化铝，铝和硅的氧化铝复合材料并从铝复合材料中除去铝和硅来制造这样的主体。

公开(公告)号：US4673435A

公开(公告)日：1987-06-16

申请号：US855448

申请日：1986-04-24

申请人： Masayoshi Yamaguchi ,  Kazunori Meguro ,  Shuitsu Matsuo ,  Yasumi Sasaki

发明人： Masayoshi Yamaguchi ,  Kazunori Meguro ,  Shuitsu Matsuo ,  Yasumi Sasaki

IPC分类号： C04B35/10 ,  C04B35/65 ,  C04B35/80 ,  C04B41/50 ,  C04B41/51 ,  C04B41/87 ,  C04B41/88 ,  C22C29/12

CPC分类号： C04B41/009 ,  C04B35/10 ,  C04B35/65 ,  C04B35/80 ,  C04B41/5025 ,  C04B41/5031 ,  C04B41/51 ,  C04B41/87 ,  C04B41/88 ,  C22C29/12 ,  C04B2111/00612

摘要： An alumina composite body comprising a plurality of elongated alumina elements oriented in random directions and interconnected so as to constitute a porous matrix, and aluminum and silicon tightly filling the porous matrix; and a method of manufacturing an alumina composite body comprising reacting a body of silica, or a body of a silicon compound such as silicon carbide or silicon nitride which has been at least partially oxidized to produce silica, with aluminum so as to change the silica into alumina.

摘要翻译： 一种氧化铝复合体，包括沿随机方向定向并互连以构成多孔基体的多个细长氧化铝元件，以及紧密填充多孔基体的铝和硅; 以及一种制造氧化铝复合体的方法，其包括使二氧化硅体或至少部分氧化生成二氧化硅的硅化合物或硅化物的主体与铝反应，以将二氧化硅变成 氧化铝。

公开(公告)号：US5087490A

公开(公告)日：1992-02-11

申请号：US510197

申请日：1990-04-17

申请人： Kazuo Ito ,  Shuitsu Matsuo ,  Yasumi Sasaki

发明人： Kazuo Ito ,  Shuitsu Matsuo ,  Yasumi Sasaki

IPC分类号： C04B35/52 ,  C04B41/45 ,  C04B41/81

CPC分类号： C04B41/4505 ,  C04B35/521 ,  C04B41/81 ,  Y10T428/13 ,  Y10T428/30

摘要： A method for impregnating a shaped ceramic material with an impregnation liquid, comprising the steps of placing the shaped ceramic material in the impregnation liquid, and applying an impregnation pressure to the impregnation liquid through a pressure transfer liquid so that the shaped ceramic material is impregnated with the impregnation liquid.

摘要翻译： 一种用浸渍液浸渍成形陶瓷材料的方法，包括以下步骤：将成形的陶瓷材料放置在浸渍液中，并通过压力转移液体向浸渍液体施加浸渍压力，使成形的陶瓷材料浸渍在 浸渍液体。

公开(公告)号：US4963396A

公开(公告)日：1990-10-16

申请号：US309631

申请日：1989-02-13

申请人： Kazuo Ito ,  Shuitsu Matsuo ,  Yasumi Sasaki

发明人： Kazuo Ito ,  Shuitsu Matsuo ,  Yasumi Sasaki

IPC分类号： C04B35/52 ,  C04B41/45 ,  C04B41/81

CPC分类号： C04B41/009 ,  C04B35/521 ,  C04B41/4505 ,  C04B41/81

摘要： A method for impregnating a shaped ceramic material with an impregnation liquid, comprising the steps of placing the shaped ceramic material in the impregnation liquid, and applying an impregnation pressure to the impregnation liquid through a pressure transfer liquid so that the shaped ceramic material is impregnated with the impregnation liquid.

公开(公告)号：US4904515A

公开(公告)日：1990-02-27

申请号：US199790

申请日：1988-05-27

申请人： Shuitsu Matsuo ,  Yoshinobu Tanada ,  Yasumi Sasaki

发明人： Shuitsu Matsuo ,  Yoshinobu Tanada ,  Yasumi Sasaki

IPC分类号： C04B41/50 ,  C04B41/87 ,  H01L21/22 ,  H01L21/673

CPC分类号： H01L21/67366 ,  C04B41/009 ,  C04B41/5035 ,  C04B41/87 ,  C04B2111/00844 ,  Y10S117/90 ,  Y10T428/22 ,  Y10T428/239 ,  Y10T428/261

摘要： A semiconductor element heat-treatment member has a Si-SiC body and a SiO.sub.2 coating formed on the surface of the Si-SiC body so as to cover the Si-SiC body. The SiO.sub.2 coating has a thickness ranging between 20.ANG. and 100,000.ANG..

摘要翻译： 半导体元件热处理构件具有形成在Si-SiC体的表面上的Si-SiC体和SiO 2涂层，以覆盖Si-SiC体。 SiO 2涂层的厚度范围在20安培和100,000安培之间。

公开(公告)号：US09188396B2

公开(公告)日：2015-11-17

申请号：US13355076

申请日：2012-01-20

申请人： Hideaki Kameoka ,  Masanobu Sugimura ,  Tatsuro Miura ,  Yasumi Sasaki ,  Hiroshi Okada ,  Shinichi Furumoto ,  Masaaki Yamamoto

发明人： Hideaki Kameoka ,  Masanobu Sugimura ,  Tatsuro Miura ,  Yasumi Sasaki ,  Hiroshi Okada ,  Shinichi Furumoto ,  Masaaki Yamamoto

IPC分类号： F28D15/00 ,  F28D15/04 ,  F28D15/02 ,  H01L23/427

CPC分类号： F28D15/04 ,  F28D15/0233 ,  F28D15/046 ,  H01L23/427 ,  H01L2924/0002 ,  Y10T29/49353 ,  H01L2924/00

摘要： The invention provides a flattened heat pipe whose vapor flowing passage is not clogged and which has an excellent capillary force. The flattened heat pipe has a closed container formed by flattening a tubular container, a plurality of wick structures arrayed within the container in a longitudinal direction so as to form an acute-angled portion where a capillary force is large at least partially within the container, a hollow portion formed of an outer peripheral surface of the wick structure and an inner wall surface of the container and a working fluid sealed into the container.

摘要翻译： 本发明提供一种扁平的热管，其蒸气流动通道不被堵塞并且具有优异的毛细管力。 扁平化的热管具有通过使管状容器变平，多个芯体结构在容器内沿纵向方向排列形成的密闭容器，以形成至少部分在容器内毛细管力大的锐角部分， 由芯体结构的外周面和容器的内壁面形成的中空部分和密封到容器中的工作流体。

公开(公告)号：US20120118537A1

公开(公告)日：2012-05-17

申请号：US13355076

申请日：2012-01-20

申请人： Hideaki KAMEOKA ,  Masanobu Sugimura ,  Tatsuro Miura ,  Yasumi Sasaki ,  Hiroshi Okada ,  Shinichi Furumoto ,  Masaaki Yamamoto

发明人： Hideaki KAMEOKA ,  Masanobu Sugimura ,  Tatsuro Miura ,  Yasumi Sasaki ,  Hiroshi Okada ,  Shinichi Furumoto ,  Masaaki Yamamoto

IPC分类号： F28D15/04 ,  B21D53/02

CPC分类号： F28D15/04 ,  F28D15/0233 ,  F28D15/046 ,  H01L23/427 ,  H01L2924/0002 ,  Y10T29/49353 ,  H01L2924/00

摘要： The invention provides a flattened heat pipe whose vapor flowing passage is not clogged and which has an excellent capillary force. The flattened heat pipe has a closed container formed by flattening a tubular container, a plurality of wick structures arrayed within the container in a longitudinal direction so as to form an acute-angled portion where a capillary force is large at least partially within the container, a hollow portion formed of an outer peripheral surface of the wick structure and an inner wall surface of the container and a working fluid sealed into the container.

摘要翻译： 本发明提供一种扁平的热管，其蒸气流动通道不被堵塞并且具有优异的毛细管力。 扁平化的热管具有通过使管状容器变平，多个芯体结构在容器内沿纵向方向排列形成的密闭容器，以形成至少部分在容器内毛细管力大的锐角部分， 由芯体结构的外周面和容器的内壁面形成的中空部分和密封到容器中的工作流体。

公开(公告)号：US5449545A

公开(公告)日：1995-09-12

申请号：US006856

申请日：1993-01-21

申请人： Eiichi Toya ,  Yukio Itoh ,  Takashi Tanaka ,  Yasumi Sasaki

发明人： Eiichi Toya ,  Yukio Itoh ,  Takashi Tanaka ,  Yasumi Sasaki

IPC分类号： G03F1/22 ,  G03F1/60 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F1/22 ,  Y10T428/24322 ,  Y10T428/24331 ,  Y10T428/24355 ,  Y10T428/24917 ,  Y10T428/265 ,  Y10T428/30

摘要： A ceramic device is disclosed that has a silicon base plate, a first ceramic film formed on a first surface of the silicon base plate, a second ceramic film formed on a second surface of the silicon base plate opposite to the first surface, and an operation opening formed in the silicon base plate between the first and second surfaces. A surface portion of the first ceramic film exposed to the operation opening Is a mirror surface having 0.05 micrometers or less of center line average height Ra. A mirror surface keeping film can be formed between the first surface of the silicon base plate and the first ceramic film for keeping a mirror surface in an etching step to etch the silicon base plate, and the silicon base plate can be reduced partially in the etching step for forming an operation opening thereby exposing a corresponding portion of the mirror surface keeping film to the operation opening.

摘要翻译： 公开了一种陶瓷器件，其具有硅基板，形成在硅基板的第一表面上的第一陶瓷膜，形成在与第一表面相对的硅基板的第二表面上的第二陶瓷膜，以及操作 开口形成在第一和第二表面之间的硅基板中。 暴露于操作开口的第一陶瓷膜的表面部分是具有0.05微米或更小的中心线平均高度Ra的镜面。 在蚀刻步骤中，在硅基板的第一表面和第一陶瓷膜之间可以形成镜面保持膜，用于在蚀刻步骤中保持镜面，以蚀刻硅基板，并且可以在蚀刻中部分地减少硅基板 用于形成操作开口的步骤，从而将镜面保持膜的相应部分暴露于操作开口。

公开(公告)号：US07278469B2

公开(公告)日：2007-10-09

申请号：US10430923

申请日：2003-05-07

申请人： Yasumi Sasaki ,  Yasuyuki Ooi

发明人： Yasumi Sasaki ,  Yasuyuki Ooi

IPC分类号： H05K7/20

CPC分类号： F28D15/046 ,  F28D15/0241 ,  H01L23/427 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention has proposed a thin sheet type heat pipe comprising: a hermetically sealed container which is formed of foil sheets opposed and jointed at peripheral portions; at least one spacer which is movably housed in said container and has a fluid path to exert a capillary force; at least one spacer which is movably housed in said container and has no fluid path; and a working fluid enclosed in said container.

摘要翻译： 本发明提出了一种薄板式热管，其特征在于，包括：密封容器，其由在周边部分相对并接合的箔片形成; 至少一个间隔件，其可移动地容纳在所述容器中并且具有施加毛细管力的流体路径; 至少一个可移动地容纳在所述容器中并且没有流体路径的间隔件; 以及封闭在所述容器中的工作流体。

公开(公告)号：US5494524A

公开(公告)日：1996-02-27

申请号：US166999

申请日：1993-12-16

申请人： Takeshi Inaba ,  Eiichi Toya ,  Takashi Tanaka ,  Yasumi Sasaki

发明人： Takeshi Inaba ,  Eiichi Toya ,  Takashi Tanaka ,  Yasumi Sasaki

IPC分类号： H01L21/205 ,  C23C16/01 ,  C23C16/32 ,  C23C16/34 ,  C30B25/12 ,  H01L21/22 ,  H01L21/31 ,  H01L21/673 ,  H01L21/683 ,  C23C16/00 ,  B05C13/00 ,  B05C13/02 ,  B05C21/00

CPC分类号： H01L21/67306 ,  C23C16/01 ,  C23C16/325 ,  C23C16/345 ,  C30B25/12 ,  H01L21/67309

摘要： End members are located at the top and the bottom of a vertical heat treatment device. A plurality of support members are vertically mounted on the end members. A plurality of wafer hold members are fixed on the support members in a parallel manner, each of which is formed in an approximately circular arc shape. The wafer hold member is made of SiC by a CVD method or Si3N4 by a CVD method. The wafer hold member has a plate portion on which a wafer is to be placed and a reinforce portion connected to the plate portion. The plate portion is 100-1000 microns in thickness.

摘要翻译： 端部件位于垂直热处理装置的顶部和底部。 多个支撑构件垂直地安装在端部构件上。 多个晶片保持构件以平行方式固定在支撑构件上，每个晶片保持构件形成为大致圆弧形状。 晶片保持构件通过CVD法由SiC或Si 3 N 4通过CVD法制成。 晶片保持构件具有其上要放置晶片的板部分和连接到板部分的加强部分。 板部的厚度为100-1000微米。