公开(公告)号：US06825126B2

公开(公告)日：2004-11-30

申请号：US10422859

申请日：2003-04-25

申请人： Masayuki Asai ,  Sadayoshi Horii ,  Kanako Kitayama ,  Masayuki Tsuneda

发明人： Masayuki Asai ,  Sadayoshi Horii ,  Kanako Kitayama ,  Masayuki Tsuneda

IPC分类号： H01L21302

CPC分类号： C23C16/0218 ,  C23C16/0236 ,  C23C16/40 ,  C23C16/401 ,  C23C16/405 ,  C23C16/4405 ,  C23C16/56

摘要： It is an object of the present invention to effectively and efficiently inhibit the influence of an eliminated gas from a built-up film deposited in a reaction chamber and reduce an incubation time to improve flatness of a thin film. A manufacturing method of a semiconductor device includes a preprocess step and a film-forming step. In the preprocess step, an RPH (Remote Plasma Hydrogenation) process of supplying a hydrogen radical onto a substrate (202), thereafter, an RPN (Remote Plasma Nitridation) process of supplying a nitrogen radical onto the substrate (203), and thereafter, an RPO (Remote Plasma Oxidation) process of supplying an oxygen radical onto the substrate (204) are performed during a substrate temperature increase for raising a substrate temperature up to a film-forming temperature. In the film-forming step, after the substrate temperature is raised up to the film-forming temperature, a film-forming process is performed by a thermal CVD method by supplying a source gas onto the substrate (205), and thereafter, the RPO process is performed (206). In this film-forming step, the film-forming source supply onto the substrate and the RPO process are preferably repeated a plurality of times.

摘要翻译： 本发明的一个目的是有效地和有效地抑制沉积在反应室中的积层膜的排出气体的影响，并减少孵化时间以改善薄膜的平整度。 半导体器件的制造方法包括预处理步骤和成膜步骤。 在预处理步骤中，将氢自由基供应到基板（202）上的RPH（远程等离子体氢化）方法，此后，向基板（203）供给氮自由基的RPN（远程等离子体氮化）工艺， 在衬底温度升高期间执行将氧自由基供应到衬底（204）上的RPO（远程等离子体氧化）工艺，以将衬底温度升高到成膜温度。 在成膜步骤中，在衬底温度升高到成膜温度之后，通过将源气体供应到衬底（205）上，通过热CVD法进行成膜工艺，此后，RPO 进行处理（206）。 在该成膜步骤中，优选重复多次重复供给到基板上的成膜源和RPO工艺。

公开(公告)号：US06884738B2

公开(公告)日：2005-04-26

申请号：US10372245

申请日：2003-02-25

申请人： Masayuki Asai ,  Kanako Kitayama

发明人： Masayuki Asai ,  Kanako Kitayama

IPC分类号： H01L21/31 ,  C23C16/40 ,  C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  H01L21/316

CPC分类号： H01L21/02252 ,  C23C16/405 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45527 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/4584 ,  C23C16/52 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/31604

摘要： According to the present invention, flatness of a thin film formed on a substrate is improved without generating particles and lowering productivity. A method of manufacturing a semiconductor device includes a first thin film layer forming step A and a second thin film layer forming step B. In the first thin film layer forming step A, on the way of heating and raising the temperature of the substrate up to a film-forming temperature, a film-forming source supply in which an organic source gas is made adhere onto the substrate in yet unreacted state is performed (202), and thereafter, a RPO process (Remote Plasma Oxidation) in which an oxygen radical is supplied onto the substrate to form a first thin film layer is performed (203). In this first thin film layer forming step A, it is preferable to repeat the film-forming source supply onto the substrate and the RPO process more than once. In the second thin film layer forming step B, after the source gas is supplied onto the substrate by a thermal CVD method to perform a film-forming process (205) after raising the temperature of the substrate to the film-forming temperature, the RPO process is performed to form a second thin film layer on the first thin film layer with a predetermined film thickness (206).

摘要翻译： 根据本发明，改善了形成在基板上的薄膜的平坦度，而不会产生颗粒并降低生产率。 制造半导体器件的方法包括第一薄膜层形成步骤A和第二薄膜层形成步骤B.在第一薄膜层形成步骤A中，在加热和升高基底的温度的同时，至 进行成膜温度，使有机源气体在未反应状态下附着在基板上的成膜源供给（202），然后进行其中氧自由基的RPO工艺（远程等离子体氧化） 被提供到基板上以形成第一薄膜层（203）。 在该第一薄膜层形成工序A中，优选在基板上和RPO工序上重复成膜源不止一次。 在第二薄膜层形成步骤B中，在通过热CVD法将源气体供应到基板上之后，在将基板的温度升高成膜温度之后进行成膜工艺（205），RPO 进行处理以在第一薄膜层上形成具有预定膜厚度的第二薄膜层（206）。

公开(公告)号：US07524766B2

公开(公告)日：2009-04-28

申请号：US10521248

申请日：2003-07-15

申请人： Hideharu Itatani ,  Sadayoshi Horii ,  Masayuki Asai ,  Atsushi Sano

发明人： Hideharu Itatani ,  Sadayoshi Horii ,  Masayuki Asai ,  Atsushi Sano

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： C23C16/45542 ,  C23C16/0272 ,  H01L28/55 ,  H01L28/60 ,  H01L28/90

摘要： To obtain a conductive metal film having superior step coverage, adhesiveness, and high productivity. A conductive metal film or metal oxidized film suitable as a capacitor electrode is formed on a substrate by performing an excited-gas supplying step after a source gas supplying step. In the source gas supplying step, gas obtained by vaporizing an organic source is supplied to the substrate, and the gas thus supplied is allowed to be adsorbed on the substrate. In the excited-gas supplying step, oxygen or nitrogen containing gas excited by plasma is supplied to the substrate to decompose the source adsorbed on the substrate, thus forming a film. An initial film-forming stop is a step of forming the film by repeating the source gas supplying step and the excited-gas supplying step once or multiple times. A desired thickness can be obtained by one step of the initial film-forming step. However, thereafter, in addition to the initial film-forming step, the film-forming step may be two steps by performing the main film-forming step of simultaneously supplying the gas obtained by vaporizing the organic source and oxygen containing gas or nitrogen containing gas not excited by plasma by using a thermal CVD method.

摘要翻译： 以获得具有优异的台阶覆盖率，粘合性和高生产率的导电金属膜。 通过在源气体供给工序之后进行激励气体供给工序，在基板上形成适合作为电容电极的导电性金属膜或金属氧化膜。 在原料气体供给工序中，将通过汽化有机源得到的气体供给到基板，由此供给的气体被吸附在基板上。 在激励气体供给步骤中，将由等离子体激发的含氧气体或氮气的气体供给到基板，以分解吸附在基板上的源，从而形成膜。 初始成膜停止是通过重复源气体供给步骤和激发气体供给步骤一次或多次来形成膜的步骤。 通过初始成膜步骤的一个步骤可以获得所需的厚度。 然而，此后，除了初始成膜步骤之外，成膜步骤可以分两步进行主要成膜步骤：同时供给通过蒸发有机源和含氧气体或含氮气体获得的气体 不使用热CVD法等离子体激发。

公开(公告)号：US20090104792A1

公开(公告)日：2009-04-23

申请号：US11990451

申请日：2007-01-17

申请人： Hironobu Miya ,  Masayuki Asai ,  Norikazu Mizuno

发明人： Hironobu Miya ,  Masayuki Asai ,  Norikazu Mizuno

IPC分类号： H01L21/314

CPC分类号： H01L21/31608 ,  C23C16/402 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/45546 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228

摘要： Disclosed is a producing method of a semiconductor device, including: loading at least one substrate formed on a surface thereof with a tungsten film into a processing chamber; and forming a silicon oxide film on the surface of the substrate which includes the tungsten film by alternately repeating following steps a plurality of times: supplying the processing chamber with a first reaction material including a silicon atom while heating the substrate at 400° C.; and supplying the processing chamber with hydrogen and water which is a second reaction material while heating the substrate at 400° C. at a ratio of the water with respect to the hydrogen of 2×10−1 or lower.

摘要翻译： 本发明公开了一种半导体器件的制造方法，其特征在于，包括：将形成在其表面上的至少一个基板上的钨膜加载到处理室内; 以及通过多次交替重复以下步骤在包括所述钨膜的所述基板的表面上形成氧化硅膜：在400℃下加热所述基板的同时向所述处理室供给包含硅原子的第一反应材料; 并在处理室中加入作为第二反应材料的氢和水，同时以400℃的水相对于氢为2×10 -1或更低的比例加热基底。

公开(公告)号：US20070042581A1

公开(公告)日：2007-02-22

申请号：US10574571

申请日：2005-01-21

申请人： Atsushi Sano ,  Sadayoshi Horii ,  Hideharu Itatani ,  Masayuki Asai

发明人： Atsushi Sano ,  Sadayoshi Horii ,  Hideharu Itatani ,  Masayuki Asai

IPC分类号： H01L21/24

CPC分类号： H01L21/02148 ,  C23C16/34 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/31645 ,  H01L21/3185

摘要： To provide a manufacturing method of a semiconductor device and a substrate processing apparatus capable of easily controlling a nitrogen concentration distribution in a film containing a metal atom and a silicon atom, and manufacturing a high quality semiconductor device. The method comprises a step of forming a film containing the metal atom and the silicon atom on a substrate 30 in a reaction chamber 4, and performing a nitriding process for the film, wherein the film is formed by changing a silicon concentration at least in two stages in the step of forming a film.

摘要翻译： 提供能够容易地控制含有金属原子和硅原子的膜的氮浓度分布的半导体装置的制造方法和基板处理装置，以及制造高品质的半导体装置。 该方法包括在反应室4中在基板30上形成含有金属原子和硅原子的膜，并对膜进行氮化处理的步骤，其中通过将硅浓度至少改变为二 形成薄膜步骤的阶段。

公开(公告)号：US20050250341A1

公开(公告)日：2005-11-10

申请号：US10521248

申请日：2003-07-15

申请人： Hideharu Itatani ,  Sadayoshi Horii ,  Masayuki Asai ,  Atsushi Sano

发明人： Hideharu Itatani ,  Sadayoshi Horii ,  Masayuki Asai ,  Atsushi Sano

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/45542 ,  C23C16/0272 ,  H01L28/55 ,  H01L28/60 ,  H01L28/90

摘要： To obtain a conductive metal film having superior step coverage, adhesiveness, and high productivity. A conductive metal film or metal oxidized film suitable as a capacitor electrode is formed on a substrate by performing an excited-gas supplying step after a source gas supplying step. In the source gas supplying step, gas obtained by vaporizing an organic source is supplied to the substrate, and the gas thus supplied is allowed to be adsorbed on the substrate. In the excited-gas supplying step, oxygen or nitrogen containing gas excited by plasma is supplied to the substrate to decompose the source adsorbed on the substrate, thus forming a film. An initial film-forming stop is a step of forming the film by repeating the source gas supplying step and the excited-gas supplying step once or multiple times. A desired thickness can be obtained by one step of the initial film-forming step. However, thereafter, in addition to the initial film-forming step, the film-forming step may be two steps by performing the main film-forming step of simultaneously supplying the gas obtained by vaporizing the organic source and oxygen containing gas or nitrogen containing gas not excited by plasma by using a thermal CVD method.

摘要翻译： 以获得具有优异的台阶覆盖率，粘合性和高生产率的导电金属膜。 通过在源气体供给工序之后进行激励气体供给工序，在基板上形成适合作为电容电极的导电性金属膜或金属氧化膜。 在原料气体供给工序中，将通过汽化有机源得到的气体供给到基板，由此供给的气体被吸附在基板上。 在激励气体供给步骤中，将由等离子体激发的含氧气体或氮气的气体供给到基板，以分解吸附在基板上的源，从而形成膜。 初始成膜停止是通过重复源气体供给步骤和激发气体供给步骤一次或多次来形成膜的步骤。 通过初始成膜步骤的一个步骤可以获得所需的厚度。 然而，此后，除了初始成膜步骤之外，成膜步骤可以分两步进行主要成膜步骤：同时供给通过蒸发有机源和含氧气体或含氮气体获得的气体 不使用热CVD法等离子体激发。

公开(公告)号：US07767594B2

公开(公告)日：2010-08-03

申请号：US11990451

申请日：2007-01-17

申请人： Hironobu Miya ,  Masayuki Asai ,  Norikazu Mizuno

发明人： Hironobu Miya ,  Masayuki Asai ,  Norikazu Mizuno

IPC分类号： H01L21/00

CPC分类号： H01L21/31608 ,  C23C16/402 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/45546 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228

摘要： Disclosed is a producing method of a semiconductor device, including: loading at least one substrate formed on a surface thereof with a tungsten film into a processing chamber; and forming a silicon oxide film on the surface of the substrate which includes the tungsten film by alternately repeating following steps a plurality of times: supplying the processing chamber with a first reaction material including a silicon atom while heating the substrate at 400° C.; and supplying the processing chamber with hydrogen and water which is a second reaction material while heating the substrate at 400° C. at a ratio of the water with respect to the hydrogen of 2×10−1 or lower.

摘要翻译： 本发明公开了一种半导体器件的制造方法，其特征在于，包括：将形成在其表面上的至少一个基板上的钨膜加载到处理室内; 以及通过多次交替重复以下步骤在包括所述钨膜的所述基板的表面上形成氧化硅膜：在400℃下加热所述基板的同时向所述处理室供给包含硅原子的第一反应材料; 并在处理室中以与水相对于氢的比例为2×10-1或更低的方式在400℃下加热基板，并且向第一反应材料供给氢气和水。

公开(公告)号：US07531467B2

公开(公告)日：2009-05-12

申请号：US10574571

申请日：2005-01-21

申请人： Atsushi Sano ,  Sadayoshi Horii ,  Hideharu Itatani ,  Masayuki Asai

发明人： Atsushi Sano ,  Sadayoshi Horii ,  Hideharu Itatani ,  Masayuki Asai

IPC分类号： H01L21/31

CPC分类号： H01L21/02148 ,  C23C16/34 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/31645 ,  H01L21/3185

摘要： To provide a manufacturing method of a semiconductor device and a substrate processing apparatus capable of easily controlling a nitrogen concentration distribution in a film containing a metal atom and a silicon atom, and manufacturing a high quality semiconductor device.The method comprises a step of forming a film containing the metal atom and the silicon atom on a substrate 30 in a reaction chamber 4, and performing a nitriding process for the film, wherein the film is formed by changing a silicon concentration at least in two stages in the step of forming a film.

摘要翻译： 提供能够容易地控制含有金属原子和硅原子的膜的氮浓度分布的半导体装置的制造方法和基板处理装置，以及制造高品质的半导体装置。 该方法包括在反应室4中在基板30上形成含有金属原子和硅原子的膜，并对膜进行氮化处理的步骤，其中通过将硅浓度至少改变为二 形成薄膜步骤的阶段。

公开(公告)号：US09545736B2

公开(公告)日：2017-01-17

申请号：US13985231

申请日：2012-02-13

申请人： Masayuki Asai ,  Mineo Suzuki ,  Tetsu Yabuno

发明人： Masayuki Asai ,  Mineo Suzuki ,  Tetsu Yabuno

IPC分类号： B29C33/38 ,  B22F3/11 ,  B22F3/24 ,  B22F5/00 ,  C22C49/08 ,  B22D17/22 ,  C22C47/14

CPC分类号： B29C33/3814 ,  B22D17/2209 ,  B22F3/11 ,  B22F3/24 ,  B22F5/007 ,  C22C47/14 ,  C22C49/08

摘要： A mold and die metallic material, an air-permeable member for mold and die use, and a method for making the same are provided. The mold and die metallic material is made by forming a mixed material containing stainless steel fibers with an equivalent diameter of 30-300 μm and a length of 0.4-5.0 mm, and stainless steel powder, heat sintering a green body of the mixed material, and heating the sintered body thus obtained in a nitrogen atmosphere and nitrided; wherein average open pore diameter thereof is 3-50 μm.

摘要翻译： 提供了模具和模具金属材料，用于模具和模具的透气部件及其制造方法。 模具和模具金属材料通过形成具有当量直径为30-300μm，长度为0.4-5.0mm的不锈钢纤维的混合材料和不锈钢粉末，热混合材料的生坯， 并在氮气气氛中加热由此获得的烧结体并氮化; 其中平均开孔直径为3-50μm。

公开(公告)号：US20130313405A1

公开(公告)日：2013-11-28

申请号：US13985231

申请日：2012-02-13

申请人： Masayuki Asai ,  Mineo Suzuki ,  Tetsu Yabuno

发明人： Masayuki Asai ,  Mineo Suzuki ,  Tetsu Yabuno

IPC分类号： B29C33/38

CPC分类号： B29C33/3814 ,  B22D17/2209 ,  B22F3/11 ,  B22F3/24 ,  B22F5/007 ,  C22C47/14 ,  C22C49/08

摘要： A mold and die metallic material, an air-permeable member for mold and die use, and a method for making the same are provided. The mold and die metallic material is made by forming a mixed material containing stainless steel fibers with an equivalent diameter of 30-300 μm and a length of 0.4-5.0 mm, and stainless steel powder, heat sintering a green body of the mixed material, and heating the sintered body thus obtained in a nitrogen atmosphere and nitrided; wherein average open pore diameter thereof is 3-50 μm.

摘要翻译： 提供了模具和模具金属材料，用于模具和模具的透气部件及其制造方法。 模具和模具金属材料通过形成具有当量直径为30-300μm，长度为0.4-5.0mm的不锈钢纤维的混合材料和不锈钢粉末，将混合材料的生坯热烧结， 并在氮气气氛中加热由此获得的烧结体并氮化; 其中平均开孔直径为3-50μm。