利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

17 条记录 (耗时 0.022 秒)

    SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体激光器件及其制造方法

    公开(公告)号：US20090262771A1

    公开(公告)日：2009-10-22

    申请号：US12090334

    申请日：2007-07-31

    申请人： Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata ,  Yasuhiko Nomura ,  Seiichi Tokunaga

    发明人： Daijiro Inoue ,  Yasuyuki Bessho ,  Masayuki Hata ,  Yasuhiko Nomura ,  Seiichi Tokunaga

    IPC分类号： H01S5/026 ,  H01L21/00

    CPC分类号： H01S5/0425 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/34333 ,  H01S2304/04

    摘要： A semiconductor laser device capable of suppressing damage of a waveguide is obtained. This GaN-based semiconductor laser chip (semiconductor laser device) includes an n-type GaN substrate of a nitride-based semiconductor and a semiconductor layer of a nitride-based semiconductor formed on the n-type GaN substrate and provided with a ridge portion constituting a waveguide extending in a direction F. The ridge portion (waveguide) is formed on a region approaching a first side from the center of the semiconductor layer. On a region opposite to the first side of the ridge portion (waveguide), a cleavage introduction step is formed from the side of the semiconductor layer, to extend in a direction intersecting with the extensional direction F of the ridge portion (waveguide).

    摘要翻译： 可以获得能够抑制波导损伤的半导体激光装置。 这种GaN基半导体激光器芯片（半导体激光器件）包括氮化物基半导体的n型GaN衬底和形成在n型GaN衬底上的氮化物基半导体的半导体层，并且具有构成 沿方向F延伸的波导。脊部（波导）形成在从半导体层的中心接近第一侧的区域上。 在与脊部（波导）的第一侧相对的区域上，从半导体层的侧面开始，在与脊部（波导管）的延伸方向F相交的方向上延伸。

    Illumination device and manufacturing method thereof
    6.
    发明申请
    Illumination device and manufacturing method thereof 有权
    照明装置及其制造方法

    公开(公告)号：US20070228923A1

    公开(公告)日：2007-10-04

    申请号：US11710405

    申请日：2007-02-26

    申请人： Seiichi Tokunaga ,  Tatsuya Kunisato ,  Takenori Goto ,  Masayuki Hata

    发明人： Seiichi Tokunaga ,  Tatsuya Kunisato ,  Takenori Goto ,  Masayuki Hata

    IPC分类号： H01J1/62 ,  H01J9/02

    CPC分类号： F21S8/00 ,  F21Y2105/10 ,  F21Y2105/12 ,  F21Y2113/13 ,  F21Y2115/10

    摘要： Illumination device has a plurality of light emitting units, each with light emitting element and first fluorescent material region provided at a light emitting side of the light emitting element. A plurality of second fluorescent material regions are provided at the light emitting sides of respective light emitting units. Second fluorescent material regions having the same emission conversion property are respectively provided at the light emitting side of at least one light emitting unit having the same emission property among the plurality of light emitting units.

    摘要翻译： 照明装置具有多个发光单元，每个具有设置在发光元件的发光侧的发光元件和第一荧光体区域。 在各发光单元的发光侧设置有多个第二荧光体区域。 在多个发光单元中具有相同发光特性的至少一个发光单元的发光侧分别设置具有相同发光转换特性的第二荧光材料区域。

    Illumination device and manufacturing method thereof
    7.
    发明授权
    Illumination device and manufacturing method thereof 有权
    照明装置及其制造方法

    公开(公告)号：US07768204B2

    公开(公告)日：2010-08-03

    申请号：US11710405

    申请日：2007-02-26

    申请人： Seiichi Tokunaga ,  Tatsuya Kunisato ,  Takenori Goto ,  Masayuki Hata

    发明人： Seiichi Tokunaga ,  Tatsuya Kunisato ,  Takenori Goto ,  Masayuki Hata

    IPC分类号： H01J1/62

    CPC分类号： F21S8/00 ,  F21Y2105/10 ,  F21Y2105/12 ,  F21Y2113/13 ,  F21Y2115/10

    摘要： Illumination device has a plurality of light emitting units, each with light emitting element and first fluorescent material region provided at a light emitting side of the light emitting element. A plurality of second fluorescent material regions are provided at the light emitting sides of respective light emitting units. Second fluorescent material regions having the same emission conversion property are respectively provided at the light emitting side of at least one light emitting unit having the same emission property among the plurality of light emitting units.

    摘要翻译： 照明装置具有多个发光单元，每个具有设置在发光元件的发光侧的发光元件和第一荧光体区域。 在各发光单元的发光侧设置有多个第二荧光体区域。 在多个发光单元中具有相同发光特性的至少一个发光单元的发光侧分别设置具有相同发光转换特性的第二荧光材料区域。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    8.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20080291959A1

    公开(公告)日：2008-11-27

    申请号：US12123660

    申请日：2008-05-20

    申请人： Seiichi Tokunaga ,  Kunio Takeuchi

    发明人： Seiichi Tokunaga ,  Kunio Takeuchi

    IPC分类号： H01S5/22 ,  H01L21/76

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/44 ,  H01S5/0202 ,  H01S5/0217 ,  H01S5/0218 ,  H01S5/0425

    摘要： In a blue-violet semiconductor laser device, a pair of side surfaces of a semiconductor device structure composed of a nitride based semiconductor layer is respectively positioned inside a pair of side surfaces of a partial substrate composed of a Ge substrate. This causes the pair of side surfaces of the semiconductor device structure and the pair of side surfaces of the partial substrate to be respectively spaced apart from each other by a predetermined distance in a direction perpendicular to the pair of side surfaces of the semiconductor device structure. On the partial substrate, current blocking layers are formed in a region between the pair of side surfaces of the partial substrate and the pair of side surfaces of the semiconductor device structure.

    摘要翻译： 在蓝紫色半导体激光装置中，由氮化物系半导体层构成的半导体装置结构的一对侧面分别位于由Ge基板构成的部分基板的一对侧面的内侧。 这使得半导体器件结构的一对侧表面和部分衬底的一对侧表面在垂直于半导体器件结构的该对侧表面的方向上彼此间隔开预定距离。 在部分基板上，在部分基板的一对侧面和半导体器件结构的一对侧面之间的区域中形成电流阻挡层。

    Semiconductor light-emitting device
    9.
    发明授权
    Semiconductor light-emitting device 有权
    半导体发光装置

    公开(公告)号：US08384101B2

    公开(公告)日：2013-02-26

    申请号：US12441247

    申请日：2008-01-14

    申请人： Seiichi Tokunaga ,  Kunio Takeuchi

    发明人： Seiichi Tokunaga ,  Kunio Takeuchi

    IPC分类号： H01L33/00

    CPC分类号： H01L33/56 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2933/0091 ,  H01L2924/00014

    摘要： Such a semiconductor light-emitting device (10, 30, 40) that emitted light has small directivity of light intensity and a color tone and a light output is hardly reduced is obtained. This semiconductor light-emitting device includes a semiconductor light-emitting element (1, 31) and a thin-film light diffusion portion (8, 8a, 38, 41) arranged on a light-emitting direction side of the semiconductor light-emitting element.

    摘要翻译： 这种发出光的半导体发光装置（10,30,40）的光强度方向性较小，色调不足，光输出难以降低。 该半导体发光元件具备配置在半导体发光元件的发光方向侧的半导体发光元件（1,31）和薄膜光扩散部（8,8a，38,41） 。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    10.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20110085578A1

    公开(公告)日：2011-04-14

    申请号：US12970027

    申请日：2010-12-16

    申请人： Seiichi Tokunaga ,  Kunio Takeuchi

    发明人： Seiichi Tokunaga ,  Kunio Takeuchi

    IPC分类号： H01S5/22 ,  H01L33/32

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/44 ,  H01S5/0202 ,  H01S5/0217 ,  H01S5/0218 ,  H01S5/0425

    摘要： In a blue-violet semiconductor laser device, a pair of side surfaces of a semiconductor device structure composed of a nitride based semiconductor layer is respectively positioned inside a pair of side surfaces of a partial substrate composed of a Ge substrate. This causes the pair of side surfaces of the semiconductor device structure and the pair of side surfaces of the partial substrate to be respectively spaced apart from each other by a predetermined distance in a direction perpendicular to the pair of side surfaces of the semiconductor device structure. On the partial substrate, current blocking layers are formed in a region between the pair of side surfaces of the partial substrate and the pair of side surfaces of the semiconductor device structure.

    摘要翻译： 在蓝紫色半导体激光装置中，由氮化物系半导体层构成的半导体装置结构的一对侧面分别位于由Ge基板构成的部分基板的一对侧面的内侧。 这使得半导体器件结构的一对侧表面和部分衬底的一对侧表面在垂直于半导体器件结构的该对侧表面的方向上彼此间隔开预定距离。 在部分基板上，在部分基板的一对侧面和半导体器件结构的一对侧面之间的区域中形成电流阻挡层。