公开(公告)号：US07510082B2

公开(公告)日：2009-03-31

申请号：US11596681

申请日：2005-03-23

申请人： Masayuki Kimura ,  Ryuichi Hirano ,  Hideki Kurita

发明人： Masayuki Kimura ,  Ryuichi Hirano ,  Hideki Kurita

IPC分类号： B65D85/48

CPC分类号： H01L21/67353

摘要： The present invention relates to a wafer storage container which contains a semiconductor wafer one by one and provides a technology to effectively reduce adhesion of particles on semiconductor wafer surfaces during the storage of the wafer. A wafer storage container which contains a wafer one by one, includes: a wafer containing member including a domed-shape recess which abuts on a circumferential edge of the wafer and is capable of holding the wafer; and a cover member which is engaged with the wafer containing member and is capable of sealing the wafer containing member; and a wafer rear surface protection member which is formed into a shape substantially same as an opening of the domed-shape recess and comes into contact with an entire rear surface of the wafer placed so that a front surface is directed the domed-shape recess.

摘要翻译： 本发明涉及一种晶片储存容器，它一个接一个地包含一个半导体晶片，并且提供了一种在晶片保存期间有效降低颗粒在半导体晶片表面上的附着力的技术。 一个晶片储存容器，其一个接一个地包含一个晶片，它包括：一个晶片容纳元件，它包括一个圆顶形凹槽，该半圆形凹槽邻接晶圆的圆周边缘并且能够保持晶片; 以及盖构件，其与所述晶片容纳构件接合并且能够密封所述晶片容纳构件; 以及晶片后表面保护构件，其形成为与圆顶形凹部的开口基本相同的形状，并与放置的晶片的整个后表面接触，使得前表面被引导到圆顶形凹部。

公开(公告)号：US20070221519A1

公开(公告)日：2007-09-27

申请号：US11596681

申请日：2005-03-23

申请人： Masayuki Kimura ,  Ryuichi Hirano ,  Hideki Kurita

发明人： Masayuki Kimura ,  Ryuichi Hirano ,  Hideki Kurita

IPC分类号： B65D85/02 ,  B65D85/00

CPC分类号： H01L21/67353

摘要： The present invention relates to a wafer storage container which contains a semiconductor wafer one by one and provides a technology to effectively reduce adhesion of particles on semiconductor wafer surfaces during the storage of the wafer. A wafer storage container which contains a wafer one by one, includes: a wafer containing member including a domed-shape recess which abuts on a circumferential edge of the wafer and is capable of holding the wafer; and a cover member which is engaged with the wafer containing member and is capable of sealing the wafer containing member; and a wafer rear surface protection member which is formed into a shape substantially same as an opening of the domed-shape recess and comes into contact with an entire rear surface of the wafer placed so that a front surface is directed the domed-shape recess.

摘要翻译： 本发明涉及一种晶片储存容器，它一个接一个地包含一个半导体晶片，并且提供了一种在晶片保存期间有效降低颗粒在半导体晶片表面上的附着力的技术。 一个晶片储存容器，其一个接一个地包含一个晶片，它包括：一个晶片容纳元件，它包括一个圆顶形凹槽，该半圆形凹槽邻接晶圆的圆周边缘并且能够保持晶片; 以及盖构件，其与所述晶片容纳构件接合并且能够密封所述晶片容纳构件; 以及晶片后表面保护构件，其形成为与圆顶形凹部的开口基本相同的形状，并与放置的晶片的整个后表面接触，使得前表面被引导到圆顶形凹部。

公开(公告)号：US07875957B2

公开(公告)日：2011-01-25

申请号：US12438636

申请日：2007-08-17

申请人： Kenji Suzuki ,  Ryuichi Hirano ,  Hideki Kurita

发明人： Kenji Suzuki ,  Ryuichi Hirano ,  Hideki Kurita

IPC分类号： C01B19/00 ,  C01B19/04 ,  H01L29/22

CPC分类号： C30B29/48 ,  C30B11/00 ,  C30B33/00

摘要： Provided is a semiconductor substrate for epitaxial growth which does not require any etching treatment as a pretreatment in the stage of performing an epitaxial growth of HgCdTe film. A CdTe system compound semiconductor substrate for the epitaxial growth of the HgCdTe film is housed in an inactive gas atmosphere, in a predetermined period of time (for example, 10 hours) after mirror finish treatment thereof, to thereby regulate the proportion of Te oxide of the total amount of Te on the substrate surface which is obtained by XPS measurement so as to be not more than 30%.

摘要翻译： 提供一种用于外延生长的半导体衬底，其在进行HgCdTe膜的外延生长的阶段中不需要任何蚀刻处理作为预处理。 用于HgCdTe膜的外延生长的CdTe系化合物半导体衬底在镜面抛光处理之后的预定时间（例如10小时）内容纳在惰性气体气氛中，从而调节 通过XPS测量获得的基板表面上的Te的总量不大于30％。

公开(公告)号：US20090269271A1

公开(公告)日：2009-10-29

申请号：US12438636

申请日：2007-08-17

申请人： Kenji Suzuki ,  Ryuichi Hirano ,  Hideki Kurita

发明人： Kenji Suzuki ,  Ryuichi Hirano ,  Hideki Kurita

IPC分类号： C01B19/04

CPC分类号： C30B29/48 ,  C30B11/00 ,  C30B33/00

摘要： Provided is a semiconductor substrate for epitaxial growth which does not require any etching treatment as a pretreatment in the stage of performing an epitaxial growth of HgCdTe film. A CdTe system compound semiconductor substrate for the epitaxial growth of the HgCdTe film is housed in an inactive gas atmosphere, in a predetermined period of time (for example, 10 hours) after mirror finish treatment thereof, to thereby regulate the proportion of Te oxide of the total amount of Te on the substrate surface which is obtained by XPS measurement so as to be not more than 30%.

摘要翻译： 提供一种用于外延生长的半导体衬底，其在进行HgCdTe膜的外延生长的阶段中不需要任何蚀刻处理作为预处理。 用于HgCdTe膜的外延生长的CdTe系化合物半导体衬底在镜面抛光处理之后的预定时间（例如10小时）内容纳在惰性气体气氛中，从而调节 通过XPS测量获得的基板表面上的Te的总量不大于30％。

公开(公告)号：US20090025629A1

公开(公告)日：2009-01-29

申请号：US12223453

申请日：2007-02-02

申请人： Hideki Kurita ,  Ryuichi Hirano

发明人： Hideki Kurita ,  Ryuichi Hirano

IPC分类号： C30B25/18 ,  B32B3/00

CPC分类号： C30B25/18 ,  C30B29/40 ,  Y10T428/24479

摘要： It is to provide a substrate for growing a semiconductor, which is effective for suppressing an occurrence of surface defects different in type from hillock defects in case of epitaxially growing a compound semiconductor layer, particularly an Al-based compound semiconductor layer.In a substrate for growing a compound semiconductor, in which a crystal surface inclined at a predetermined off angle with respect to a (100) plane is a principal plane, an angle made by a direction of a vector obtained by projecting a normal vector of the principal plane on the (100) plane and one direction of a [0-11] direction, a [01-1] direction, a [011] direction and a [0-1-1] direction is set to be less than 35°, and the compound semiconductor layer is epitaxially grown on the substrate.

摘要翻译： 提供一种用于生长半导体的衬底，其在外延生长化合物半导体层，特别是Al基化合物半导体层的情况下，有效抑制类型与山丘缺陷不同的表面缺陷的发生。 在用于生长化合物半导体的衬底中，其中以相对于（100）面倾斜预定偏离角的晶体表面是主平面，由通过将（100）面的法向量投影获得的矢量的方向 （100）面上的主平面和[0-11]方向的一个方向，[01-1]方向，[011]方向和[0-1-1]方向设定为小于35 °，并且在衬底上外延生长化合物半导体层。

公开(公告)号：US08513775B2

公开(公告)日：2013-08-20

申请号：US13131614

申请日：2010-09-30

申请人： Kenji Suzuki ,  Hideyuki Taniguchi ,  Hideki Kurita ,  Ryuichi Hirano

发明人： Kenji Suzuki ,  Hideyuki Taniguchi ,  Hideki Kurita ,  Ryuichi Hirano

IPC分类号： H01L29/22 ,  H01L31/0328 ,  H01L31/0296 ,  H01L31/00 ,  H01L31/0336

CPC分类号： C30B29/48 ,  C30B25/186 ,  H01L21/02024 ,  H01L21/02411 ,  H01L21/02562 ,  H01L21/463

摘要： Provided is a CdTe-based semiconductor substrate for epitaxial growth, which is capable of growing good-quality epitaxial crystals without urging a substrate user to implement etching treatment before the epitaxial growth.A CdTe-based semiconductor substrate, in which tracks of linear polishing damage with a depth of 1 nm or more are not observed within a viewing range of 10 μm×10 μm when a surface of the substrate is observed by an atomic force microscope, and orange peel defects are not observed when the surface of the substrate is visually observed under a fluorescent lamp, can grow the good-quality epitaxial crystals.

摘要翻译： 提供了一种用于外延生长的CdTe基半导体衬底，其能够在不促使衬底用户在外延生长之前实施蚀刻处理的同时生长良好质量的外延晶体。 当通过原子力显微镜观察基板的表面时，在10mum×10um的观察范围内未观察到具有1nm以上的深度的线性抛光损伤的轨迹的CdTe系半导体基板， 在荧光灯下目视观察基板的表面时，不会观察到橙皮缺陷，可以生长优质的外延晶体。

公开(公告)号：US07745854B2

公开(公告)日：2010-06-29

申请号：US12223453

申请日：2007-02-02

申请人： Hideki Kurita ,  Ryuichi Hirano

发明人： Hideki Kurita ,  Ryuichi Hirano

IPC分类号： H01L29/94 ,  C30B23/00 ,  C30B28/12

CPC分类号： C30B25/18 ,  C30B29/40 ,  Y10T428/24479

摘要： It is to provide a substrate for growing a semiconductor, which is effective for suppressing an occurrence of surface defects different in type from hillock defects in case of epitaxially growing a compound semiconductor layer, particularly an Al-based compound semiconductor layer.In a substrate for growing a compound semiconductor, in which a crystal surface inclined at a predetermined off angle with respect to a (100) plane is a principal plane, an angle made by a direction of a vector obtained by projecting a normal vector of the principal plane on the (100) plane and one direction of a [0-11] direction, a [01-1] direction, a [011] direction and a [0-1-1] direction is set to be less than 35°, and the compound semiconductor layer is epitaxially grown on the substrate.

摘要翻译： 提供一种用于生长半导体的衬底，其在外延生长化合物半导体层，特别是Al基化合物半导体层的情况下，有效抑制类型与山丘缺陷不同的表面缺陷的发生。 在用于生长化合物半导体的衬底中，其中以相对于（100）面倾斜预定偏离角的晶体表面是主平面，由通过将（100）面的法向量投影获得的矢量的方向 （100）面上的主平面和[0-11]方向的一个方向，[01-1]方向，[011]方向和[0-1-1]方向设定为小于35 °，并且在衬底上外延生长化合物半导体层。

公开(公告)号：US06900522B2

公开(公告)日：2005-05-31

申请号：US10472518

申请日：2002-12-17

申请人： Hideki Kurita ,  Masashi Nakamura

发明人： Hideki Kurita ,  Masashi Nakamura

IPC分类号： H01L21/02 ,  C30B25/20 ,  C30B29/40 ,  H01L21/20 ,  H01L21/203 ,  H01L21/304 ,  H01L29/06 ,  H01L21/30

CPC分类号： H01L21/02021 ,  H01L21/02392 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02543 ,  H01L21/02546

摘要： In a semiconductor wafer (W) having a periphery thereof chamfered, and having at least a main surface side thereof subjected to mirror finishing, an inclined surface (21) is formed on the periphery of the wafer, such that has an angle (θ) of inclination of the inclined surface (21) with respect to a main surface (10) is not smaller than 5° and not larger than 25°, and at the same time a length (L) of the same in the radial direction of the wafer is 100 μm or longer. Further, the inclined surface is configured to have a non-mirror-finished portion (21b) toward the periphery of the wafer.

摘要翻译： 在具有倒角周边的半导体晶片（W）中，并且至少具有主表面侧进行镜面精加工，在晶片的周边上形成倾斜面（21），使得具有角度（θ） 倾斜表面（21）相对于主表面（10）的倾斜度不小于5°且不大于25°，同时在该倾斜表面（21）的径向方向上的长度（L） 晶圆为100毫米或更长。 此外，倾斜表面被配置为具有朝向晶片周边的非镜面精加工部分（21b）。

公开(公告)号：US20060012010A1

公开(公告)日：2006-01-19

申请号：US10534695

申请日：2003-05-14

申请人： Masashi Nakamura ,  Hideki Kurita

发明人： Masashi Nakamura ,  Hideki Kurita

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： C30B25/02 ,  C30B25/183 ,  C30B29/40 ,  H01L21/02392 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/02543 ,  H01L21/302

摘要： An epitaxial growth method includes: supporting a substrate for growth (for example, an InP substrate) with a substrate supporter, growing a compound semiconductor layer comprising 3 or 4 elements (for example, a III-V group compound semiconductor such as an InGaAs layer, AlGaAs layer, AlInAs layer and AlInGaAs layer) on the substrate for growth by metal organic chemical vapor deposition, polishing the substrate so that an angle of gradient is 0.00° to 0.03° or 0.04° to 0.24° with respect to (100) direction in the entire effective area of the substrate, and forming the compound semiconductor layer to be 0.5 μm thick or more on the substrate by using the substrate for growth.

摘要翻译： 外延生长方法包括：用衬底支撑体支撑用于生长的衬底（例如，InP衬底），生长包含3或4个元件的化合物半导体层（例如，诸如InGaAs层的III-V族化合物半导体 ，AlGaAs层，AlInAs层和AlInGaAs层），通过金属有机化学气相沉积生长，对基板进行抛光，使得倾斜角相对于（100）方向为0.00°至0.03°或0.04°至0.24° 在衬底的整个有效区域中，并且通过使用用于生长的衬底在衬底上形成0.5μm以上的化合物半导体层。

公开(公告)号：US07338902B2

公开(公告)日：2008-03-04

申请号：US10534695

申请日：2003-05-14

申请人： Masashi Nakamura ,  Hideki Kurita

发明人： Masashi Nakamura ,  Hideki Kurita

IPC分类号： H01L21/44

CPC分类号： C30B25/02 ,  C30B25/183 ,  C30B29/40 ,  H01L21/02392 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/02543 ,  H01L21/302

摘要： An epitaxial growth method includes: supporting a substrate for growth (for example, an InP substrate) with a substrate supporter, growing a compound semiconductor layer comprising 3 or 4 elements (for example, a III-V group compound semiconductor such as an InGaAs layer, AlGaAs layer, AlInAs layer and AlInGaAs layer) on the substrate for growth by metal organic chemical vapor deposition, polishing the substrate so that an angle of gradient is 0.00° to 0.03° or 0.04° to 0.24° with respect to (100) direction in the entire effective area of the substrate, and forming the compound semiconductor layer to be 0.5 μm thick or more on the substrate by using the substrate for growth.

摘要翻译： 外延生长方法包括：用衬底支撑体支撑用于生长的衬底（例如，InP衬底），生长包含3或4个元件的化合物半导体层（例如，诸如InGaAs层的III-V族化合物半导体 ，AlGaAs层，AlInAs层和AlInGaAs层），通过金属有机化学气相沉积生长，对基板进行抛光，使得倾斜角相对于（100）方向为0.00°至0.03°或0.04°至0.24° 在衬底的整个有效区域中，并且通过使用用于生长的衬底在衬底上形成0.5μm以上的化合物半导体层。