摘要:
An X-ray exposure apparatus includes a stage for holding a mask having a pattern for circuit manufacturing, a stage for holding a wafer to be exposed to the pattern of the mask with X-rays, and a reflection reduction imaging system, disposed between the mask stage and the wafer stage, including a reflecting mirror arrangement, containing at least three, but not more than five, reflecting mirrors coated with multi-layer films for receiving X-rays from the mask and directing them to the wafer to expose the wafer to the pattern of the mask with the X-ray in a reduced scale.
摘要:
A reflection type mask usable to print a pattern upon a semiconductor wafer by use of soft X-rays or otherwise is disclosed. A reflective surface is formed by a multilayered film which is formed on a substrate by layering different materials having different refractive indices in consideration of Bragg diffraction and Fresnel reflection. A non-reflective portion is formed on the reflecting surface to provide a desired pattern. Alternatively, a pattern comprising a multilayered structure may be formed upon a non-reflective substrate. The mask of the present invention assures pattern printing of high contrast.
摘要:
A multi-layer reflection mirror for soft X-ray to vacuum ultraviolet ray, comprises a substrate, a plurality of first layers, and a plurality of second layers formed on the substrate alternately with the first layers. The first layers primarily consists of at least one of single elements, such as ruthenium, or of a boride carbide, silicate, nitride oxide of a transition metal. The second layers primarily consists of at least one of compounds of carbon, silicon (e.g. carbide, nitride and oxide of silicon), boron (e.g. carbide, nitride and oxide of boron), beryllium (e.g. carbide, nitride and oxide of beryllium) and aluminum (e.g. carbide, nitride and oxide of aluminum).
摘要:
A multi-layer reflection mirror for soft X-ray to vacuum ultraviolet ray, comprises a substrate, a plurality of first layers, and a plurality of second layers formed on the substrate alternately with the first layers. The first layer primarily consists of at least one of single elements, such as ruthenium or of a boride, carbide, silicide, nitride oxide of a transition metal. The second layer primarily consists of at least one of compounds of carbon, silicon (e.g. carbide, nitride and oxide of silicon), boron (e.g. carbide, nitride and oxide of boron), beryllium (e.g. carbide, nitride and oxide of beryllium) and aluminum (e.g. carbide, nitride and oxide of aluminum).
摘要:
An X-ray mask support member comprises a support frame, and a support membrane which is held thereon and comprises X-ray-transmissive membranes laminated in multiple layers. The support membrane comprises and holds between the multi-layers at least one layer of a transmissive membrane T having an electrical resistivity of 1.times.10.sup.-4 .OMEGA..multidot.cm or less.
摘要:
An X-ray exposure apparatus for exposing a resist on a substrate to a pattern of an original includes a radiation source for providing X-rays; and an illumination system for irradiating the original and the substrate with the X-rays such that the resist of the substrate is exposed to the pattern of the original with the X-rays; wherein the illumination system has a convex mirror having a reflection surface of a shape like a cylindrical surface, for reflecting the X-rays from the radiation source to the original; and wherein the reflection surface of the mirror has such an aspherical surface shape that, with respect to a top of the reflection surface, a radiation source side and an original side are asymmetrical in shape, that, in the neighborood of the top, the radiation source side has a radius of curvature smaller than that of the original side, and that at a peripheral potion the reflection surface has a curvature of a radius larger than that at the top of the reflection surface.
摘要:
An X-ray mask structure includes a mask substrate having a pattern; a supporting frame for carrying and supporting the mask substrate; and an adhesive material for fixing the mask substrate to the supporting frame; wherein a stress releasing groove is formed in at least one of the mask substrate and the supporting frame.
摘要:
Disclosed are a reflection mirror for reflecting a received radiation beam to produce a reflection beam, a reflection device with such a mirror, a scanning system with such a mirror and an exposure apparatus with such a mirror. A radiation beam is inputted to the reflection mirror with an angle of incidence which changes with position on the reflection mirror, wherein the reflection mirror has a multilayered film effective to provide an increased relative reflectivity with respect to a predetermined wavelength of the reflection beam, and wherein a layer of the multilayered film has a thickness which changes with position so as to substantially avoid a shift of the wavelength of the reflection beam dependent upon the angle of incidence.
摘要:
An X-ray transmitting window for use in X-ray lithography, for allowing transmission therethrough of X-rays from a vacuum ambience to a different ambience, includes an X-ray transmitting film, and a gasket material gas-tightly provided on at least one of opposite surfaces in a peripheral portion of the X-ray transmitting film. The gasket material has a Brinell hardness smaller than that of the X-ray transmitting film. The formed X-ray transmitting window is able to be sandwiched and fastened between a pair of flanges in a gas-tight manner.
摘要:
An exposure method using X-rays from a synchrotron radiation source includes determining a relationship between an X-ray intensity distribution and an exposure amount distribution in an exposure area; and effecting exposure operation while controlling a dose amount for respective positions in the exposure area using the relationship, wherein the dose amount is controlled by changing a driving profile of a movable shutter for controlling the exposure operation, and wherein the relationship is in the form of a proportional coefficient between an X-ray intensity and the exposure amount as a function of position information in the exposure area.