公开(公告)号：US6134807A

公开(公告)日：2000-10-24

申请号：US79768

申请日：1998-05-15

申请人： Mitsuaki Komino ,  Osamu Uchisawa

发明人： Mitsuaki Komino ,  Osamu Uchisawa

IPC分类号： H01L21/304 ,  H01L21/00 ,  H01L21/08 ,  F26B7/00

CPC分类号： H01L21/67034

摘要： A drying processing apparatus for supplying a dry gas to a processing chamber 35, which houses therein semiconductor wafers W, to dry the semiconductor wafers W, including a heater 32 for heating N.sub.2 gas serving as a carrier gas; a vapor generator 34 for making IPA misty by using the N.sub.2 gas heated by the heater 32 and for heating the IPA to produce the dry gas; and a flow control element 36 for supplying a predetermined rate of N.sub.2 gas to the processing chamber 35. Thus, it is possible to improve the efficiency of heat transfer of N.sub.2 gas, and it is possible to increase the amount of produced IPA gas and decrease the time to produce IPA gas. In addition, it is possible to prevent the turbulence of atmosphere in the processing chamber 35 after the drying processing is completed.

摘要翻译： 一种用于将干燥气体供给到容纳半导体晶片W的处理室35以干燥半导体晶片W的干燥处理设备，该半导体晶片W包括用于加热作为载气的N 2气体的加热器32; 蒸汽发生器34，用于通过使用由加热器32加热的N 2气体使IPA发生雾化，并加热IPA以产生干燥气体; 以及用于向处理室35提供预定速率的N 2气体的流量控制元件36.因此，可以提高N 2气体的传热效率，并且可以增加产生的IPA气体的量并减少 产生“近期行动计划”气体的时间。 此外，干燥处理完成后，可以防止处理室35内的气氛紊乱。

公开(公告)号：US6131307A

公开(公告)日：2000-10-17

申请号：US129760

申请日：1998-08-05

申请人： Mitsuaki Komino ,  Osamu Uchisawa ,  Yasuhiro Chiba

发明人： Mitsuaki Komino ,  Osamu Uchisawa ,  Yasuhiro Chiba

IPC分类号： H01L21/304 ,  F26B21/10 ,  F26B21/12 ,  G05B11/36 ,  G05D7/06 ,  G05D16/06 ,  G05D16/20 ,  F26B3/00

CPC分类号： F26B21/10 ,  F26B21/12

摘要： A pressure and flow rate of a gas flowing into or out of a processing chamber are controlled, so as to decrease or increase an atmosphere in the processing chamber higher or lower than a target pressure to obtain a target pressure. During a first period, an opening speed of an opening degree adjusting device provided in an inlet pipe communicating to the processing chamber is controlled to a first target value toward a first predetermined functional approximation line (for example a function of second degree) as ideal value. During the rest of periods other than the first period, the opening speed is controlled stepwise to two or more predetermined target values so that the processing chamber reaches the target pressure. During a period before the first period, the opening speed may be controlled to a second target value among the two or more target values, based on a control amount for the opening degree adjusting device. During another period after the first period, the opening speed may be controlled toward a second predetermined functional approximation line (e.g., linear) as ideal value, which has a larger change than the first functional approximation line, until the second target value reaches the target pressure.

摘要翻译： 控制流入或流出处理室的气体的压力和流量，以便降低或增加处理室中的气氛高于或低于目标压力以获得目标压力。 在第一时段期间，设置在与处理室连通的入口管中的开度调节装置的打开速度被控制为朝向第一预定功能近似线（例如第二度的函数）的第一目标值作为理想值 。 在除了第一时段之外的其余时段中，打开速度被逐步地控制到两个或更多个预定目标值，使得处理室达到目标压力。 在第一期间之前的期间，基于开度调节装置的控制量，可以将打开速度控制在两个以上目标值中的第二目标值。 在第一时段之后的另一时段期间，打开速度可以被控制为第二预定功能近似线（例如，线性）作为理想值，其具有比第一功能近似线更大的变化，直到第二目标值达到目标 压力。

公开(公告)号：US6167323A

公开(公告)日：2000-12-26

申请号：US130668

申请日：1998-08-07

申请人： Mitsuaki Komino ,  Osamu Uchisawa ,  Yasuhiro Chiba

发明人： Mitsuaki Komino ,  Osamu Uchisawa ,  Yasuhiro Chiba

IPC分类号： C23C16/455 ,  C23C16/52 ,  H01L21/00 ,  G05D23/00

CPC分类号： H01L21/67248 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/52 ,  H01L21/67017

摘要： Flow sensors 41 and 42 for detecting a flow load including the presence of a flow of gas are provided in supply lines 2a through 2d for supplying a given gas into a treatment chamber 6. A CPU 40 is provided for previously storing control parameters corresponding to the presence of a flow of gas. The presence of a flow of gas or a flow of IPA is detected by the flow sensors 41, 42 or an IPA supply pump 43, and detected signals are transmitted to the CPU 40. On the basis of a control signal outputted from the CPU 40, a cartridge heater 14, inner and outer tube heaters 25 and 26 and an insulation heater 52 are controlled. Thus, a control parameter adopted in accordance with the presence of a flow of gas to be used is determined, so that the control parameter previously stored in a data table 100 is selected in accordance with a control mode to control the temperature or pressure of the gas.

摘要翻译： 用于检测包括气流存在的流量负载的流量传感器41和42设置在用于将给定气体供应到处理室6中的供应管线2a至2d中。CPU 40用于预先存储对应于 存在气体流。 通过流量传感器41,42或IPA供给泵43检测气体流动或IPA流的存在，并且将检测信号传送到CPU 40.基于从CPU 40输出的控制信号 ，盒式加热器14，内管加热器25和外管加热器26以及绝缘加热器52被控制。 因此，确定根据所使用的气体流的存在而采用的控制参数，使得根据控制模式选择先前存储在数据表100中的控制参数，以控制温度或压力 加油站。

公开(公告)号：US06157774A

公开(公告)日：2000-12-05

申请号：US79767

申请日：1998-05-15

申请人： Mitsuaki Komino ,  Osamu Uchisawa

发明人： Mitsuaki Komino ,  Osamu Uchisawa

IPC分类号： B01F3/04 ,  B01F5/04 ,  B01F15/00 ,  B01F15/06 ,  C23C16/448 ,  H01L21/00 ,  A01G13/06 ,  F23D11/10

CPC分类号： H01L21/67017 ,  B01F15/065 ,  B01F15/066 ,  B01F3/04049 ,  B01F5/0415 ,  B01F5/0416 ,  B01F5/0426 ,  B01F5/0428 ,  B01F5/0471 ,  C23C16/4481 ,  C23C16/4486 ,  B01F15/00123 ,  B01F2015/062

摘要： A vapor generating apparatus comprises: a convergent-divergent nozzle 50 having an inlet port 50a and an outlet port 50a for a gas for a vapor medium, the convergent-divergent nozzle 50 comprising a convergent nozzle portion 51a, which is formed so as to be tapered and narrowed from the inlet port 50a toward the outlet port 50b, and a divergent nozzle portion 51c, which is formed so as to be expanded from the convergent nozzle portion 51a toward the outlet port 50b; and a supply port 54 for a liquid to be evaporated, the supply port 54 being open to the divergent nozzle portion 51c of the convergent-divergent nozzle 50. Thus, it is possible to easily produce a gas using a smaller number of control factors, and it is possible to increase the amount of produced gas and decrease the vapor generating time.

摘要翻译： 蒸汽发生装置包括：会聚扩散喷嘴50，其具有用于蒸气介质的气体的入口端口50a和出口端口50a，收敛扩散喷嘴50包括会聚喷嘴部分51a，其形成为 从入口端口50a朝向出口端口50b呈锥形和变窄;以及扩散喷嘴部分51c，其形成为从会聚喷嘴部分51a朝向出口端口50b扩展; 以及用于待蒸发的液体的供给口54，供给口54对会聚扩散喷嘴50的扩散喷嘴部51c开口。因此，可以容易地使用较少数量的控制因素产生气体， 并且可以增加产生的气体量并降低蒸气产生时间。

公开(公告)号：US06634845B1

公开(公告)日：2003-10-21

申请号：US09595930

申请日：2000-06-16

申请人： Mitsuaki Komino

发明人： Mitsuaki Komino

IPC分类号： B65G4905

CPC分类号： H01L21/67161 ,  B65G49/06 ,  B65G2249/02 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/67748

摘要： A number of process chambers connected to a transfer module can be increased after a cluster system provided with the transfer module is initially established. The transfer module transfers an object to be processed between a transfer chamber and at least one process chamber connected to the transfer chamber. A housing of the transfer module defines the transfer chamber, the housing having a substantially rectangular cross section so that a plurality of the housings are connectable to each other. A movable part is provided in the transfer chamber, the movable part being movable along a base surface provided in the housing of the transfer module. A transfer part is provided on the movable part, the transfer part holding the object to be processed and being movable between the transfer chamber and the process chamber. A drive mechanism drives the movable part, and a control unit controls motion of the movable part.

摘要翻译： 在设置有传送模块的集群系统最初建立之后，可以增加连接到传送模块的多个处理室。 传送模块在传送室和连接到传送室的至少一个处理室之间传送要处理的物体。 转移模块的壳体限定传送室，壳体具有基本矩形的横截面，使得多个壳体可彼此连接。 可移动部分设置在传送室中，可移动部分可沿设置在传送模块的壳体中的基面移动。 传递部分设置在可移动部分上，传送部分保持被处理物体并且可在传送室和处理室之间移动。 驱动机构驱动可动部，控制部控制可动部的动作。

公开(公告)号：US06544380B2

公开(公告)日：2003-04-08

申请号：US10079600

申请日：2002-02-19

申请人： Masayuki Tomoyasu ,  Akira Koshiishi ,  Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose ,  Mitsuaki Komino ,  Hiroto Takenaka ,  Hiroshi Nishikawa ,  Yoshio Sakamoto

发明人： Masayuki Tomoyasu ,  Akira Koshiishi ,  Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose ,  Mitsuaki Komino ,  Hiroto Takenaka ,  Hiroshi Nishikawa ,  Yoshio Sakamoto

IPC分类号： H05H100

CPC分类号： C23C16/45565 ,  C23C16/4405 ,  C23C16/4407 ,  C23C16/4483 ,  C23C16/4485 ,  C23C16/4557 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32963 ,  Y10S156/916

摘要： An apparatus for treating a substrate which includes a chamber and an opening formed in the chamber allowing the substrate to be conveyed into the chamber or taken out thereof. The chamber, also, includes a detachable baffle plate that fits around an electrode. For treatment to commence, the substrate is placed on the electrode and the chamber is exhausted of or supplied with gases. The electrode is then vertically lifted together with the baffle plate and the baffle plate is moved either to a position that is higher in level than an upper end of the opening of the chamber or to a position that is lower in level than a lower end of the opening of the chamber. This allows the baffle plate to shield a region near the opening of the chamber from a treatment region and allows reaction products to be adhered to the baffle plate.

摘要翻译： 一种用于处理基板的设备，其包括室和形成在所述室中的开口，使得所述基板被输送到所述室中或从其中取出。 该腔室还包括一个可拆卸的挡板，其围绕电极配合。 为了开始处理，将基板放置在电极上，并且室被排出或供应气体。 然后将电极与挡板一起垂直提升，并且挡板移动到比室的开口的上端更高的位置，或者移动到比下端更低的位置 房间的开放。 这允许挡板将腔室开口附近的区域与处理区域隔离，并允许反应产物粘附到挡板。

公开(公告)号：US06379756B2

公开(公告)日：2002-04-30

申请号：US09864022

申请日：2001-05-23

申请人： Mitsuaki Komino

发明人： Mitsuaki Komino

IPC分类号： C23C16509

CPC分类号： C23C16/45565 ,  C23C16/4405 ,  C23C16/4407 ,  C23C16/4483 ,  C23C16/4485 ,  C23C16/4557 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32963 ,  Y10S156/916

摘要： A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.

公开(公告)号：US5376213A

公开(公告)日：1994-12-27

申请号：US104475

申请日：1993-07-28

申请人： Yoichi Ueda ,  Mitsuaki Komino ,  Koichi Kazama

发明人： Yoichi Ueda ,  Mitsuaki Komino ,  Koichi Kazama

IPC分类号： C23C16/458 ,  C23C16/46 ,  C23F1/02

CPC分类号： H01L21/67126 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/463 ,  H01L21/68785

摘要： A plasma etching apparatus includes a wafer-mount arranged in an aluminum-made process chamber. The wafer-mount comprises an aluminum-made susceptor, a heater fixing frame and a cooling block, and a ceramics heater is attached to the heater fixing frame. A bore in which liquid nitrogen is contained is formed in the cooling block. The cold of the cooling block is transmitted to a wafer on the susceptor to cool it while it is being etched. The ceramics heater adjusts the temperature of the wafer cooled. Liquid nitrogen is circulated in the bore in the cooling block, passing through coolant passages defined by a pair of joint devices which connect the bottom of the process chamber and the cooling block to each other. Each of the joint devices includes an upper conductive connector secured to the cooling block, a lower conductive connector secured to the chamber bottom, and an electrical- and thermal-insulating ring for connecting both of the connectors to each other while keeping them electrical- and thermal-insulated.

摘要翻译： 等离子体蚀刻装置包括设置在铝制处理室中的晶片安装座。 晶片支架包括铝制基座，加热器固定框架和冷却块，并且陶瓷加热器附接到加热器固定框架。 在冷却块中形成有容纳液氮的孔。 冷却块的冷却被传送到基座上的晶片，以在其被蚀刻时使其冷却。 陶瓷加热器调节冷却晶片的温度。 液氮在冷却块的孔中循环，穿过由连接处理室的底部和冷却块的一对联接装置限定的冷却剂通道。 每个联合装置包括固定到冷却块的上部导电连接器，固定到室底部的下部导电连接器，以及用于将两个连接器彼此连接的电绝缘环和热绝缘环，同时保持它们的电气和 绝热。

公开(公告)号：US20100200566A1

公开(公告)日：2010-08-12

申请号：US12300979

申请日：2007-05-14

申请人： Mitsuaki Komino ,  Kenji Saito

发明人： Mitsuaki Komino ,  Kenji Saito

IPC分类号： H05B3/68 ,  H05B3/06

CPC分类号： C23C16/46 ,  H01L21/67109

摘要： The present invention is to provide a heating apparatus available to reduce temperature quickly with efficient cooling effects in the case of reducing the temperature of a chamber or the like. A substrate processing apparatus 1 comprises a heating unit 100 in a chamber inner space 23 surrounded by a processing chamber 11 and a cover 12. The heating unit 100 is provided by a planer heating body 113 between an outer shell 111 and an inner shell 112. The heating unit generates heat when electricity is carried to the planar heat generating body 113, and heats the chamber inner space 23 to a desired temperature. At a boundary section of the outer shell 111 and the planar shaped heating body 113 of the heating unit 100, a cooling medium flow path 114 is spirally arranged along the circumference surface of the heating unit 100. At the time of reducing temperature, the cooling medium is permitted to flow in the cooling medium flow path 114 to forcibly cool the chamber inner space 23 and the substrate processing apparatus 1, and the temperature is rapidly reduced.

摘要翻译： 本发明提供一种可以在降低室等的温度的情况下快速降低温度的加热装置和有效的冷却效果。 基板处理装置1包括由处理室11和盖12包围的室内空间23中的加热单元100.加热单元100由外壳111和内壳112之间的平面加热体113设置。 当电被传送到平面发热体113时，加热单元产生热量，并将室内空间23加热到期望的温度。 在加热单元100的外壳111和平面状加热体113的边界部分，沿着加热单元100的圆周表面螺旋地设置冷却介质流路114.在降温时，冷却 允许介质在冷却介质流路114中流动，以强制冷却室内空间23和基板处理装置1，并且迅速降低温度。

公开(公告)号：US5769952A

公开(公告)日：1998-06-23

申请号：US842833

申请日：1997-04-17

申请人： Mitsuaki Komino

发明人： Mitsuaki Komino

IPC分类号： B65G49/07 ,  C23C16/44 ,  C23C16/54 ,  F16K51/02 ,  H01L21/00 ,  H01L21/677 ,  C23C16/00

CPC分类号： H01L21/67126 ,  C23C16/4404 ,  C23C16/54 ,  F16K51/02 ,  H01L21/67745 ,  Y10T137/599

摘要： A reduced pressure treatment unit comprising a plurality of treatment chambers conducting reduced pressure process treatment of a treatment object (wafer) and a normal pressure treatment unit conducting normal pressure process treatment of the treatment object, which are connected by a load lock chamber. The reduced pressure treatment unit comprises a plurality of reduced pressure process treatment chambers connected by means of a gate valve to a reduced pressure transport chamber equipped with a robot arm. The normal pressure treatment unit comprises a plurality of normal pressure process treatment chambers disposed in the vicinity of a robot arm. The load lock chamber is disposed at a position where the transport ranges of the two robot arms overlap. Also, the gate valve opening and closing the transport opening between the load lock and treatment chambers comprises a surface layer portion exposed to the atmosphere within the treatment chamber and a rear base portion whereby the surface layer portion is freely attached and removed with respect to the base portion by, e.g., screws, thus enabling independent replacement of the surface layer portion.

摘要翻译： 一种减压处理单元，包括多个处理室，对处理对象（晶片）进行减压处理处理，以及通过负载锁定室连接的对处理对象进行常压处理处理的常压处理单元。 减压处理单元包括通过闸阀连接到配备有机器人臂的减压输送室的多个减压处理室。 常压处理单元包括设置在机器人手臂附近的多个常压处理室。 负载锁定室设置在两个机器人臂的输送范围重叠的位置。 此外，打开和关闭装载锁和处理室之间的输送开口的闸阀包括暴露于处理室内的大气的表面层部分和后基部，从而使表面层部分相对于所述表面层部分自由地附接和移除 基部分，例如通过螺丝，从而能够独立地更换表面层部分。