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公开(公告)号：US20180374669A1
公开(公告)日：2018-12-27
申请号：US16063891
申请日：2016-12-23
Applicant: Massachusetts Institute of Technology
Inventor： Akintunde I. Akinwande , Stephen Angelo Guerrera
Abstract: According to some aspects, a cold cathode device is provided, the device comprising a substrate, a field electron emitter disposed upon the substrate and configured to emit electrons in a first direction, and a structure encapsulating the field electron emitter, thereby creating an airtight seal around the field electron emitter, at least a portion of the structure being an atomically thin membrane positioned in the first direction with respect to the field electron emitter. According to some embodiments, at least one einzel lens may be located within the structure and configured to direct electrons emitted by the field electron emitter.
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公开(公告)号：US20150371810A1
公开(公告)日：2015-12-24
申请号：US14765759
申请日：2014-02-05
Applicant: Massachusetts Institute of Technology
Inventor： Stephen Angelo Guerrera , Akintunde I. Akinwande
IPC: H01J37/073 , H01J37/317 , H01J37/30
CPC classification number: H01J37/073 , H01J37/065 , H01J37/3007 , H01J37/3174 , H01J37/3177 , H01J2237/0473 , H01J2237/063 , H01J2237/3175 , H01J2237/31781 , H01L21/00
Abstract: An electron beam apparatus is disclosed that includes a plurality of current source elements disposed in at least one field emitter array. Each current source element can be a gated vertical transistor, an ungated vertical transistor, or a current controlled channel that is proximate to an optically-modulated current source. The electron beam apparatus includes a plurality of field emitter tips, each field emitter tip of the plurality of field emitter tips being coupled to a current source element of the plurality of current source elements. The electron beam apparatus is configured to allow selective activation of one or more of the current source elements.
Abstract translation: 公开了一种电子束装置，其包括设置在至少一个场发射器阵列中的多个电流源元件。 每个电流源元件可以是门控垂直晶体管，非门控垂直晶体管或接近光调制电流源的电流控制通道。 电子束装置包括多个场发射器尖端，多个场发射器尖端中的每个场发射极尖端耦合到多个电流源元件的电流源元件。 电子束装置被配置为允许选择性地激活一个或多个电流源元件。
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公开(公告)号：US10431412B2
公开(公告)日：2019-10-01
申请号：US15539371
申请日：2015-12-23
Applicant: Massachusetts Institute of Technology
Inventor： Akintunde I. Akinwande , Stephen Angelo Guerrera
Abstract: Example compact ion beam sources are provided that can be used to generate ion beams using chemical species and field emitter elements or field emitter arrays. In some example, the compact ion beam source can be implemented as neutron sources based on ion beam bombardment of neutron-rich targets.
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Patent Agency Ranking
公开(公告)号：US20180247784A1
公开(公告)日：2018-08-30
申请号：US15539371
申请日：2015-12-23
Applicant: Massachusetts Institute of Technology
Inventor： Akintunde I. Akinwande , Stephen Angelo Guerrera
CPC classification number: H01J27/205 , H01J27/26 , H01J37/08 , H01J2237/082 , H05H3/06
Abstract: Example compact ion beam sources are provided that can be used to generate ion beams using chemical species and field emitter elements or field emitter arrays. In some example, the compact ion beam source can be implemented as neutron sources based on ion beam bombardment of neutron-rich targets.
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公开(公告)号：US10832885B2
公开(公告)日：2020-11-10
申请号：US16063891
申请日：2016-12-23
Applicant: Massachusetts Institute of Technology
Inventor： Akintunde I. Akinwande , Stephen Angelo Guerrera
Abstract: According to some aspects, a cold cathode device is provided, the device comprising a substrate, a field electron emitter disposed upon the substrate and configured to emit electrons in a first direction, and a structure encapsulating the field electron emitter, thereby creating an airtight seal around the field electron emitter, at least a portion of the structure being an atomically thin membrane positioned in the first direction with respect to the field electron emitter. According to some embodiments, at least one einzel lens may be located within the structure and configured to direct electrons emitted by the field electron emitter.
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公开(公告)号：US10319554B2
公开(公告)日：2019-06-11
申请号：US15539384
申请日：2015-12-23
Applicant: Massachusetts Institute of Technology
Inventor： Akintunde I. Akinwande , Stephen Angelo Guerrera
IPC: H01J29/86 , H01L29/06 , H01L29/12 , G01L21/34 , H01J29/48 , H01J29/56 , H01J29/62 , H01J1/304 , H01J3/02
Abstract: Example compact modular electron beam units are provided that can be used to generate electron beams using field emitter elements. A modular electron beam unit may comprise an electron beam source including a base portion, at least one field emitter element coupled to the base portion, the field emitter element including a field emitter tip, at least one gate electrode and a membrane window disposed over the at least one gate electrode.
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公开(公告)号：US20170365438A1
公开(公告)日：2017-12-21
申请号：US15539384
申请日：2015-12-23
Applicant: Massachusetts Institute of Technology
Inventor： Akintunde I. Akinwande , Stephen Angelo Guerrera
CPC classification number: H01J29/86 , G01L21/34 , H01J1/3042 , H01J3/022 , H01J29/481 , H01J29/566 , H01J29/62 , H01J2229/4817 , H01J2229/5635
Abstract: Example compact modular electron beam units are provided that can be used to generate electron beams using field emitter elements. A modular electron beam unit may comprise an electron beam source including a base portion, at least one field emitter element coupled to the base portion, the field emitter element including a field emitter tip, at least one gate electrode and a membrane window disposed over the at least one gate electrode.
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公开(公告)号：US09748071B2
公开(公告)日：2017-08-29
申请号：US14765759
申请日：2014-02-05
Applicant: Massachusetts Institute of Technology
Inventor： Stephen Angelo Guerrera , Akintunde I. Akinwande
IPC: H01J37/073 , H01L21/00 , H01J37/065 , H01J37/317 , H01J37/30
CPC classification number: H01J37/073 , H01J37/065 , H01J37/3007 , H01J37/3174 , H01J37/3177 , H01J2237/0473 , H01J2237/063 , H01J2237/3175 , H01J2237/31781 , H01L21/00
Abstract: An electron beam apparatus is disclosed that includes a plurality of current source elements disposed in at least one field emitter array. Each current source element can be a gated vertical transistor, an ungated vertical transistor, or a current controlled channel that is proximate to an optically-modulated current source. The electron beam apparatus includes a plurality of field emitter tips, each field emitter tip of the plurality of field emitter tips being coupled to a current source element of the plurality of current source elements. The electron beam apparatus is configured to allow selective activation of one or more of the current source elements.
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