摘要:
A surface wave filter element includes a portion on which elastic surface waves propagate. This portion includes a piezoelectric material, an amorphous boron layer or plate and IDT electrodes for inputting and outputting signals. The piezoelectric material is a film made of ZnO, LiNbO.sub.3 or LiTaO.sub.3 formed by sputtering, ion beam deposition or chemical vapor deposition. The amorphous boron layer or boron plate may be formed on a substrate made of an inorganic material. The boron material is formed using electron beam deposition, ion beam deposition or chemical vapor deposition.
摘要:
A laminated thin film capacitor having a substrate, at least two electrode layers, at least one dielectric layer and a pair of external electrode which are placed on respective side walls of the capacitor, wherein the metal electrode layer and the dielectric layers are laminated alternately on the substrate, and every other metal electrode layers are exposed on each of side walls of the capacitor, which capacitor is excellent in dielectric properties such as a high capacity per unit volume.
摘要:
A NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal electrode are sequentially laminated on a metal electrode, thus providing a thin film capacitor. Or alternatively, a thin film capacitor is manufactured by sequentially laminating a NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a platinum thin layer as a lower electrode oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal thin layer as an upper electrode on a substrate. A plasma-enhanced CVD method is applied to form a NaCl oxide thin layer, a spinel oxide thin layer and a perovskite dielectric thin layer while a vacuum deposition method, a sputtering method, a CVD method or a plasma-enhanced CVD method is applied for the formation of a metal electrode.
摘要:
A laminated thin film capacitor having a substrate, at least two electrode layers, at least one dielectric layer and a pair of external electrode which are placed on respective side walls of the capacitor, wherein the metal electrode layer and the dielectric layers are laminated alternately on the substrate, and every other metal electrode layers are exposed on each of side walls of the capacitor, which capacitor is excellent in dielectric properties such as a high capacity per unit volume.
摘要:
In a piezoelectric element, an adhesive layer 12 is provided on a substrate 11, a first electrode layer 14 made of a noble metal containing titanium or titanium oxide is provided on the adhesive layer 12, and an orientation control layer 15 that is preferentially oriented along a (100) or (001) plane is provided on the first electrode layer 14. In the vicinity of a surface of the orientation control layer 15 that is closer to the first electrode layer 14, a (100)- or (001)-oriented region extends over titanium or titanium oxide located on one surface of the first electrode layer 14 that is closer to the orientation control layer 15, and the cross-sectional area of the region in the direction perpendicular to the thickness direction gradually increases in the direction away from the first electrode layer 14 toward the opposite side. Further, a piezoelectric layer 16 that is preferentially oriented along a (001) plane is provided on the orientation control layer 15.
摘要:
A thin film thermistor element 10 is formed by forming on a backing substrate 11 of alumina a thermistor thin film 12 and a pair of comb electrodes 13 and 14 formed of a thin film of Pt. The thermistor thin film 12, which is formed of, for example, complex oxide of Mn—Co—Ni, has either a spinel type crystal structure which is priority oriented or oriented mainly in a (100) surface or a bixbite type crystal structure which is priority oriented in a (100) or (111) surface. Alternatively, the thermistor thin film is formed of LaCoO3 and has a rhombohedral bixbite type crystal structure. This makes it possible to hold the variation in resistance value low thereby to achieve high accuracy, and the deterioration with time can be held low and the high temperature durability can be improved, for the achievement of high reliability.
摘要:
The present invention provides a temperature sensor element having excellent heat resistance, quick heat response, stable resistance, and high reliability with a less variation in resistance against time. The temperature sensor element includes a thermo-sensitive film mainly composed of a heat sensitive material having electrical resistance varies depending on the temperature; a pair of electrode films arranged to measure the electrical resistance in the direction of the thickness of the thermo-sensitive film, a base plate mainly composed of a heat-resistant insulating material for supporting the thermo-sensitive film and the electrode films, an anti-diffusion film interposed between the thermo-sensitive film and the electrode film in the vicinity of the base plate, and a film mainly composed of a heat-resistant insulating material for covering the thermo-sensitive film and the electrode films except the lead-connecting terminals of the electrode films. The thermo-sensitive film is composed of an oxide of corundum crystalline structure represented by the formula of (Al.sub.1-x-y Cr.sub.x Fe.sub.y).sub.2 O.sub.3, where 0.05.ltoreq.x+y.ltoreq.0.95, and 0.ltoreq.y/(x+y).ltoreq.0.6, and the anti-diffusion film is composed of an oxide of corundum crystalline structure represented by the formula of (Al.sub.1-x-y Cr.sub.x Fe.sub.y).sub.2 O.sub.3, where 0.ltoreq.x+y.ltoreq.0.95.
摘要翻译:本发明提供了一种具有优异的耐热性,快速热响应性,稳定的电阻和高可靠性的温度传感器元件,其耐时间变化较小。 温度传感器元件包括主要由具有根据温度而变化的电阻的热敏材料组成的热敏膜; 布置成测量热敏膜厚度方向上的电阻的一对电极膜,主要由用于支撑热敏膜的耐热绝缘材料和电极膜组成的基板,抗 介于热敏膜与基板附近的电极膜之间的扩散膜,以及主要由用于覆盖热敏膜的耐热绝缘材料和除引线连接之外的电极膜构成的膜 电极膜的端子。 热敏膜由(Al1-x-yCrxFey)2O3表示的刚玉结晶结构的氧化物组成,其中0.05 x + y <= 0.95,0
摘要:
In a piezoelectric element 20, a first electrode layer 2 made of an alloy of at least one metal selected from the group consisting of cobalt, nickel, iron, manganese and copper and a noble metal is formed on a silicon substrate 1, and a piezoelectric layer 3 made of a rhombohedral or tetragonal perovskite oxide (e.g., PZT) is formed on the first electrode layer 2 so that the piezoelectric layer 3 is preferentially oriented along the (001) plane.
摘要:
In a piezoelectric element, an adhesive layer 12 is provided on a substrate 11, a first electrode layer 14 made of a noble metal containing titanium or titanium oxide is provided on the adhesive layer 12, and an orientation control layer 15 that is preferentially oriented along a (100) or (001) plane is provided on the first electrode layer 14. In the vicinity of a surface of the orientation control layer 15 that is closer to the first electrode layer 14, a (100)- or (001)-oriented region extends over titanium or titanium oxide located on one surface of the first electrode layer 14 that is closer to the orientation control layer 15, and the cross-sectional area of the region in the direction perpendicular to the thickness direction gradually increases in the direction away from the first electrode layer 14 toward the opposite side. Further, a piezoelectric layer 16 that is preferentially oriented along a (001) plane is provided on the orientation control layer 15.
摘要:
A first electrode layer made of a noble metal containing at least one additive selected from the group consisting of Ti, Co, Ni, Mg, Fe, Ca, Sr, Mn, Ba and Al and oxides thereof, a pyroelectric layer having a thickness of 0.5 to 5 μm and having a perovskite crystalline structure whose chemical composition is represented as (Pb(1-y)Lay)Ti(1-y/4)O3 (0