-
1.发明授权Metals compatible post-etch photoresist remover and/or sacrificial antireflective coating etchant 有权金属相容的蚀刻后光刻胶去除剂和/或牺牲抗反射涂层蚀刻剂公开(公告)号：US08058219B2
公开(公告)日：2011-11-15
申请号：US12090213
申请日：2006-10-12
申请人： Melissa K. Rath , David D. Bernhard , Thomas H. Baum , Ping Jiang , Renjie Zhou , Michael B. Korzenski
发明人： Melissa K. Rath , David D. Bernhard , Thomas H. Baum , Ping Jiang , Renjie Zhou , Michael B. Korzenski
IPC分类号： C11D3/39
CPC分类号： C11D3/26 , C09D9/04 , C11D3/30 , C11D3/3773 , C11D3/43 , C11D7/32 , C11D7/3209 , C11D11/0047 , C23G1/20 , G03F7/425 , G03F7/426 , H01L21/02063 , H01L21/3212
摘要： A liquid removal composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) material from a microelectronic device having same thereon. The liquid removal composition includes at least one organic quaternary base and at least one surface interaction enhancing additive. The composition achieves at least partial removal of photoresist and/or SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the microelectronic device, such as copper and cobalt, and without damage to low-k dielectric materials employed in the microelectronic device architecture.
摘要翻译： 一种液体去除组合物和用于从其上具有其的微电子器件去除光致抗蚀剂和/或牺牲抗反射涂层（SARC）材料的方法。 液体去除组合物包括至少一种有机季碱和至少一种表面相互作用增强添加剂。 组合物在集成电路的制造中至少部分去除光致抗蚀剂和/或SARC材料，其中微电子器件（例如铜和钴）上的金属物质的蚀刻最小，并且不损坏微电子器件中使用的低k电介质材料 设备架构。
-
2.发明申请METALS COMPATIBLE POST-ETCH PHOTORESIST REMOVER AND/OR SACRIFICIAL ANTIREFLECTIVE COATING ETCHANT 有权金属兼容后蚀刻光刻胶去除剂和/或杀真菌抗反射涂层公开(公告)号：US20090118153A1
公开(公告)日：2009-05-07
申请号：US12090213
申请日：2006-10-12
申请人： Melissa K. Rath , David D. Bernhard , Thomas H. Baum , Ping Jiang , Renjie Zhou , Michael B. Korzenski
发明人： Melissa K. Rath , David D. Bernhard , Thomas H. Baum , Ping Jiang , Renjie Zhou , Michael B. Korzenski
CPC分类号： C11D3/26 , C09D9/04 , C11D3/30 , C11D3/3773 , C11D3/43 , C11D7/32 , C11D7/3209 , C11D11/0047 , C23G1/20 , G03F7/425 , G03F7/426 , H01L21/02063 , H01L21/3212
摘要： A liquid removal composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) material from a microelectronic device having same thereon. The liquid removal composition includes at least one organic quaternary base and at least one surface interaction enhancing additive. The composition achieves at least partial removal of photoresist and/or SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the microelectronic device, such as copper and cobalt, and without damage to low-k dielectric materials employed in the microelectronic device architecture.
摘要翻译： 一种液体去除组合物和用于从其上具有其的微电子器件去除光致抗蚀剂和/或牺牲抗反射涂层（SARC）材料的方法。 液体去除组合物包括至少一种有机季碱和至少一种表面相互作用增强添加剂。 组合物在集成电路的制造中至少部分去除光致抗蚀剂和/或SARC材料，其中微电子器件（例如铜和钴）上的金属物质的蚀刻最小，并且不损坏微电子器件中使用的低k电介质材料 设备架构。
-
3.发明授权Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate 有权用于蚀刻后去除沉积在基底上的光致抗蚀剂和/或牺牲抗反射材料的组合物和方法公开(公告)号：US08338087B2
公开(公告)日：2012-12-25
申请号：US10792038
申请日：2004-03-03
CPC分类号： C11D3/044 , C11D3/30 , C11D3/3947 , C11D7/06 , C11D11/0047 , G03F7/423 , G03F7/425
摘要： A composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) materials from a substrate having such material(s) thereon. The composition includes a base component, such as a quaternary ammonium base in combination with an alkali or alkaline earth base, or alternatively a strong base in combination with an oxidant. The composition may be utilized in aqueous medium, e.g., with chelator, surfactant, and/or co-solvent species, to achieve high-efficiency removal of photoresist and/or SARC materials in the manufacture of integrated circuitry, without adverse effect on metal species on the substrate, such as copper, aluminum and/or cobalt alloys, and without damage to SiOC-based dielectric materials employed in the semiconductor architecture.
摘要翻译： 用于从其上具有这种材料的基材去除光致抗蚀剂和/或牺牲抗反射涂层（SARC）材料的组合物和方法。 组合物包括碱性组分，例如与碱金属或碱土金属碱组合的季铵碱，或与氧化剂组合的强碱。 该组合物可以在水性介质中使用，例如与螯合剂，表面活性剂和/或共溶剂物质一起使用，以在集成电路的制造中实现高效去除光致抗蚀剂和/或SARC材料，而不会对金属物质产生不利影响 在基底上，例如铜，铝和/或钴合金，并且不损坏在半导体结构中使用的SiOC基电介质材料。
-
4.发明申请Metal and Dielectric Compatible Sacrificial Anti-Reflective Coating Cleaning and Removal Composition 有权金属和电介质兼容的牺牲防反射涂层清洁和去除组合物公开(公告)号：US20080242574A1
公开(公告)日：2008-10-02
申请号：US11916891
申请日：2006-06-07
IPC分类号： G03F7/42
CPC分类号： C11D11/0047 , C11D7/08 , C11D7/10 , C11D7/261 , C11D7/263 , C11D7/265 , C11D7/28 , C11D7/34 , C11D7/50 , G03F7/423
摘要： A liquid removal composition and process for removing sacrificial anti-reflective coating (SARC) material from a substrate having same thereon. The liquid removal composition includes at least one fluoride-containing compound, at least one organic solvent, optionally water, and optionally at least one chelating agent. The composition achieves at least partial removal of SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric materials employed in the semiconductor architecture.
摘要翻译： 一种液体去除组合物和从其上具有其的基材去除牺牲抗反射涂层（SARC）材料的方法。 液体去除组合物包括至少一种含氟化物的化合物，至少一种有机溶剂，任选的水和任选的至少一种螯合剂。 该组合物在集成电路的制造中至少部分去除SARC材料，同时对基板上的金属物质（例如铝，铜和钴合金）进行最小蚀刻，并且不损坏在半导体结构中使用的低k电介质材料。
-
公开(公告)号：US08679734B2
公开(公告)日：2014-03-25
申请号：US13568790
申请日：2012-08-07
CPC分类号： C11D3/30 , C11D1/72 , C11D3/044 , C11D3/3947 , C11D3/3955 , C11D3/3956 , C11D3/43 , C11D7/06 , C11D7/3209 , C11D7/3281 , C11D7/34 , C11D7/50 , C11D11/0047 , C23G1/20 , G03F7/423 , G03F7/425 , H01L21/02052 , H01L21/0206 , H01L21/31116 , H01L21/31133 , Y10S438/906
摘要： Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.
摘要翻译： 本文公开了一种用于半导体处理的组合物和方法。 在一个实施方案中，提供了用于去除光致抗蚀剂的湿清洁组合物。 组合物包含强碱; 氧化剂 和极性溶剂。 在另一个实施例中，提供了一种去除光刻胶的方法。 该方法包括以下步骤：施加包含约0.1至约30重量％的强碱的湿清洁组合物; 约1到约30重量％的氧化剂; 约20至约95重量％的极性溶剂; 并去除光致抗蚀剂。
-
6.发明申请COMPOSITION USEFUL FOR REMOVAL OF POST-ETCH PHOTORESIST AND BOTTOM ANTI-REFLECTION COATINGS 有权用于去除蚀刻后胶片和底漆抗反射涂层的组合物公开(公告)号：US20090215659A1
公开(公告)日：2009-08-27
申请号：US11813497
申请日：2006-01-09
IPC分类号： G03F7/42
摘要： An aqueous-based composition and process for removing hardened photoresist and/or bottom anti-reflective coating (BARC) material from a microelectronic device having same thereon. The aqueous-based composition includes at least one chaotropic solute, at least one alkaline base, and deionized water. The composition achieves high-efficiency removal of hardened photoresist and/or BARC material in the manufacture of integrated circuitry without adverse effect to metal species on the substrate, such as copper, and without damage to low-k dielectric materials employed in the microelectronic device architecture.
摘要翻译： 一种水性组合物和从其上具有其的微电子器件去除硬化的光致抗蚀剂和/或底部抗反射涂层（BARC）材料的方法。 水基组合物包括至少一种离液序列溶质，至少一种碱性碱和去离子水。 组合物在集成电路的制造中实现了高效去除硬化的光致抗蚀剂和/或BARC材料，而不会对衬底（例如铜）上的金属物质产生不利影响，并且不损害在微电子器件结构中使用的低k电介质材料 。
-
7.发明授权Metal and dielectric compatible sacrificial anti-reflective coating cleaning and removal composition 有权金属和电介质兼容的牺牲抗反射涂层清洗和去除组成公开(公告)号：US08951948B2
公开(公告)日：2015-02-10
申请号：US11916891
申请日：2006-06-07
CPC分类号： C11D11/0047 , C11D7/08 , C11D7/10 , C11D7/261 , C11D7/263 , C11D7/265 , C11D7/28 , C11D7/34 , C11D7/50 , G03F7/423
摘要： A liquid removal composition and process for removing sacrificial anti-reflective coating (SARC) material from a substrate having same thereon. The liquid removal composition includes at least one fluoride-containing compound, at least one organic solvent, optionally water, and optionally at least one chelating agent. The composition achieves at least partial removal of SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric materials employed in the semiconductor architecture.
摘要翻译： 一种液体去除组合物和从其上具有其的基材去除牺牲抗反射涂层（SARC）材料的方法。 液体去除组合物包括至少一种含氟化物的化合物，至少一种有机溶剂，任选的水和任选的至少一种螯合剂。 该组合物在集成电路的制造中至少部分去除SARC材料，同时对基板上的金属物质（例如铝，铜和钴合金）进行最小蚀刻，并且不损坏在半导体结构中使用的低k电介质材料。
-
8.发明授权Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings 有权用于去除蚀刻后光致抗蚀剂和底部防反射涂层的组合物公开(公告)号：US07994108B2
公开(公告)日：2011-08-09
申请号：US11813497
申请日：2006-01-09
IPC分类号： G03F7/32
摘要： An aqueous-based composition and process for removing hardened photoresist and/or bottom anti-reflective coating (BARC) material from a microelectronic device having same thereon. The aqueous-based composition includes at least one chaotropic solute, at least one alkaline base, and deionized water. The composition achieves high-efficiency removal of hardened photoresist and/or BARC material in the manufacture of integrated circuitry without adverse effect to metal species on the substrate, such as copper, and without damage to low-k dielectric materials employed in the microelectronic device architecture.
摘要翻译： 一种水性组合物和从其上具有其的微电子器件去除硬化的光致抗蚀剂和/或底部抗反射涂层（BARC）材料的方法。 水基组合物包括至少一种离液序列溶质，至少一种碱性碱和去离子水。 组合物在集成电路的制造中实现了高效去除硬化的光致抗蚀剂和/或BARC材料，而不会对衬底（例如铜）上的金属物质产生不利影响，并且不损害在微电子器件结构中使用的低k电介质材料 。
-
公开(公告)号：US20120302483A1
公开(公告)日：2012-11-29
申请号：US13568790
申请日：2012-08-07
IPC分类号： G03F7/42
CPC分类号： C11D3/30 , C11D1/72 , C11D3/044 , C11D3/3947 , C11D3/3955 , C11D3/3956 , C11D3/43 , C11D7/06 , C11D7/3209 , C11D7/3281 , C11D7/34 , C11D7/50 , C11D11/0047 , C23G1/20 , G03F7/423 , G03F7/425 , H01L21/02052 , H01L21/0206 , H01L21/31116 , H01L21/31133 , Y10S438/906
摘要： Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.
摘要翻译： 本文公开了一种用于半导体处理的组合物和方法。 在一个实施方案中，提供了用于去除光致抗蚀剂的湿清洁组合物。 组合物包含强碱; 氧化剂 和极性溶剂。 在另一个实施例中，提供了一种去除光致抗蚀剂的方法。 该方法包括以下步骤：施加包含约0.1至约30重量％的强碱的湿清洁组合物; 约1至约30重量％的氧化剂; 约20至约95重量％的极性溶剂; 并去除光致抗蚀剂。
-
10.发明申请Apparatus and Method for Supercritical Fluid Removal or Deposition Processes 审中-公开超临界流体去除或沉积过程的设备和方法公开(公告)号：US20080271991A1
公开(公告)日：2008-11-06
申请号：US11911615
申请日：2006-04-17
IPC分类号： C23C14/00
CPC分类号： C23C18/00 , B08B7/0021 , G03F7/422 , G03F7/427 , H01L21/02101
摘要： A continuous-flow supercritical fluid (SCF) apparatus and method for the deposition of thin films onto microelectronic devices or the removal of unwanted layers, particles and/or residues from microelectronic devices having same thereon. The SCF apparatus preferably includes a dynamic mixer to ensure homogeneous mixing of the SCF and other chemical components.
摘要翻译： 一种用于将薄膜沉积到微电子器件上的连续流超临界流体（SCF）装置和方法，或从其上具有相同的微电子装置去除不想要的层，颗粒和/或残余物。 SCF设备优选地包括动态混合器以确保SCF和其它化学组分的均匀混合。
-
-
-
-
-
-
-
-
-
搜索结果
254 条记录 (耗时 0.03 秒)