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    Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
    1.
    发明授权
    Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate 有权
    用于蚀刻后去除沉积在基底上的光致抗蚀剂和/或牺牲抗反射材料的组合物和方法

    公开(公告)号：US08338087B2

    公开(公告)日：2012-12-25

    申请号：US10792038

    申请日：2004-03-03

    申请人： Melissa K. Rath ,  David D. Bernhard ,  David Minsek ,  Michael B. Korzenski ,  Thomas H. Baum

    发明人： Melissa K. Rath ,  David D. Bernhard ,  David Minsek ,  Michael B. Korzenski ,  Thomas H. Baum

    IPC分类号： G03F7/32 ,  G03F7/42

    CPC分类号： C11D3/044 ,  C11D3/30 ,  C11D3/3947 ,  C11D7/06 ,  C11D11/0047 ,  G03F7/423 ,  G03F7/425

    摘要： A composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) materials from a substrate having such material(s) thereon. The composition includes a base component, such as a quaternary ammonium base in combination with an alkali or alkaline earth base, or alternatively a strong base in combination with an oxidant. The composition may be utilized in aqueous medium, e.g., with chelator, surfactant, and/or co-solvent species, to achieve high-efficiency removal of photoresist and/or SARC materials in the manufacture of integrated circuitry, without adverse effect on metal species on the substrate, such as copper, aluminum and/or cobalt alloys, and without damage to SiOC-based dielectric materials employed in the semiconductor architecture.

    摘要翻译： 用于从其上具有这种材料的基材去除光致抗蚀剂和/或牺牲抗反射涂层（SARC）材料的组合物和方法。 组合物包括碱性组分，例如与碱金属或碱土金属碱组合的季铵碱，或与氧化剂组合的强碱。 该组合物可以在水性介质中使用，例如与螯合剂，表面活性剂和/或共溶剂物质一起使用，以在集成电路的制造中实现高效去除光致抗蚀剂和/或SARC材料，而不会对金属物质产生不利影响 在基底上，例如铜，铝和/或钴合金，并且不损坏在半导体结构中使用的SiOC基电介质材料。

    FORMULATIONS FOR REMOVING COOPER-CONTAINING POST-ETCH RESIDUE FROM MICROELECTRONIC DEVICES
    5.
    发明申请
    FORMULATIONS FOR REMOVING COOPER-CONTAINING POST-ETCH RESIDUE FROM MICROELECTRONIC DEVICES 审中-公开
    用于从微电子设备中去除合成的后置残留物的配方

    公开(公告)号：US20090301996A1

    公开(公告)日：2009-12-10

    申请号：US12093125

    申请日：2006-11-07

    申请人： Pamela M. Visintin ,  Michael B. Korzenski ,  Thomas H. Baum

    发明人： Pamela M. Visintin ,  Michael B. Korzenski ,  Thomas H. Baum

    IPC分类号： B44C1/22 ,  C11D3/00

    CPC分类号： C11D11/0047 ,  C11D3/0073 ,  H01L21/02063

    摘要： A method and composition for removing copper-containing post-etch and/or post-ash residue from patterned microelectronic devices is described. The removal composition includes a diluent, a solvent and a copper corrosion inhibitor, wherein the diluent may be a dense fluid or a liquid solvent. The removal compositions effectively remove the copper-containing post-etch residue from the microelectronic device without damaging exposed low-k dielectric and metal interconnect materials.

    摘要翻译： 描述了用于从图案化的微电子器件去除含铜的后蚀刻和/或后灰渣的方法和组合物。 除去组合物包括稀释剂，溶剂和铜缓蚀剂，其中稀释剂可以是致密流体或液体溶剂。 去除组合物有效地从微电子器件去除含铜的蚀刻后残留物，而不损害暴露的低k电介质和金属互连材料。

    Treatment of supercritical fluid utilized in semiconductor manufacturing applications
    6.
    发明授权
    Treatment of supercritical fluid utilized in semiconductor manufacturing applications 失效
    半导体制造应用中超临界流体的处理

    公开(公告)号：US06735978B1

    公开(公告)日：2004-05-18

    申请号：US10364558

    申请日：2003-02-11

    申请人： Glenn M. Tom ,  Michael B. Korzenski ,  Eliodor G. Ghenciu ,  Chongying Xu ,  Thomas H. Baum

    发明人： Glenn M. Tom ,  Michael B. Korzenski ,  Eliodor G. Ghenciu ,  Chongying Xu ,  Thomas H. Baum

    IPC分类号： F25D100

    CPC分类号： C01B32/50 ,  Y02P20/544

    摘要： A system and process for utilization and disposition of a supercritical fluid composition, in which a supercritical fluid (SCF) composition is used in an SCF-using process facility such as a semiconductor manufacturing plant. The supercritical fluid composition is withdrawn from the process facility containing at least one component that is extraneous with respect to the further disposition of the supercritical fluid composition. The withdrawn supercritical fluid composition is converted to a pressurized liquid, which is treated to at least partially remove the extraneous component(s) therefrom. The extraneous component(s)-depleted pressurized liquid in its further disposition can be reconverted to a supercritical state for recycle to the SCF-using process facility, or it can be gasified and discharged to the atmosphere in the case of supercritical fluids such as CO2.

    摘要翻译： 一种用于利用和处置超临界流体组合物的系统和方法，其中超临界流体（SCF）组合物在诸如半导体制造厂的SCF使用过程设备中使用。 超临界流体组合物从处理设备中取出，其中含有至少一种相对于超临界流体组合物的进一步处置是无关的组分。 将取出的超临界流体组合物转化为加压液体，其被处理以至少部分地从其中除去外来成分。 在其进一步的处置中，去除加压液体的外来成分可以再转化为超临界状态，以再循环至使用SCF的工艺设备，或者在超临界流体如CO2的情况下，可将其气化并排放到大气中 。