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29 条记录 (耗时 0.027 秒)

    Substrate cleaving tool and method
    1.
    发明授权
    Substrate cleaving tool and method 有权
    基板切割工具及方法

    公开(公告)号：US06221740B1

    公开(公告)日：2001-04-24

    申请号：US09371436

    申请日：1999-08-10

    申请人： Michael A. Bryan ,  James K. Kai

    发明人： Michael A. Bryan ,  James K. Kai

    IPC分类号： H01L2130

    CPC分类号： B32B43/006 ,  B28D5/0011 ,  B28D5/0023 ,  B28D5/0064 ,  B28D5/0082 ,  H01L21/67092 ,  Y10T29/53683 ,  Y10T156/1939 ,  Y10T225/12 ,  Y10T225/18 ,  Y10T225/30 ,  Y10T225/386

    摘要： A cleaving tool provides pressurized gas to the edge of a substrate to cleave the substrate at a selected interface. A substrate, such as a bonded substrate, is loaded into the cleaving tool, and two halves of the tool are brought together to apply a selected pressure to the substrate. A compliant pad of selected elastic resistance provides support to the substrate while allowing the substrate to expand during the cleaving process. Bringing the two halves of the tool together also compresses an edge seal against the perimeter of the substrate. A thin tube connected to a high-pressure gas source extends through the edge seal and provides a burst of gas to separate the substrate into at least two sheets. In a further embodiment, the perimeter of the substrate is struck with an edge prior to applying the gas pressure.

    摘要翻译： 切割工具将加压气体提供到衬底的边缘以在所选择的界面处切割衬底。 衬底（例如键合衬底）被装载到劈开工具中，并且工具的两半被聚集在一起以将选择的压力施加到衬底上。 所选择的弹性阻力的柔性衬垫提供对衬底的支撑，同时允许衬底在裂开过程期间膨胀。 将工具的两个一半带到一起也可压缩衬底周边的边缘密封。 连接到高压气体源的细管延伸穿过边缘密封件并且提供气泡，以将基底分离成至少两个片。 在另一个实施例中，在施加气体压力之前，衬底的周边被边缘撞击。

    Nozzle for cleaving substrates
    3.
    发明授权
    Nozzle for cleaving substrates 失效
    用于切割基材的喷嘴

    公开(公告)号：US06263941B1

    公开(公告)日：2001-07-24

    申请号：US09370958

    申请日：1999-08-10

    申请人： Michael A. Bryan ,  James K. Kai

    发明人： Michael A. Bryan ,  James K. Kai

    IPC分类号： B32B3500

    CPC分类号： B32B43/006 ,  B28D5/0011 ,  B28D5/0023 ,  B28D5/0064 ,  B28D5/0082 ,  Y10T29/49821 ,  Y10T29/49822 ,  Y10T83/364 ,  Y10T156/1374 ,  Y10T156/1928

    摘要： A cleaving tool provides pressurized gas to the edge of a substrate in combination with a sharpened edge to cleave the substrate at a selected interface. The edge of the tool is tapped against the perimeter of a substrate, such as a bonded substrate, and a burst of gas pressure is then applied at approximately the point of contact with the edge of the tool. The combination of mechanical force and gas pressure separates the substrate into two halves at a selected interface, such as a weakened layer in a donor wafer.

    摘要翻译： 切割工具将加压气体与锋利的边缘组合地提供到基底的边缘，以在选定的界面处切割基底。 将工具的边缘与衬底的周边（例如键合衬底）相接合，然后在大约与工具边缘的接触点处施加气体压力脉冲。 机械力和气体压力的组合将基板在选定的界面（例如施主晶片中的弱化层）分离成两半。

    Substrate cleaving tool and method
    4.
    发明授权
    Substrate cleaving tool and method 有权
    基板切割工具及方法

    公开(公告)号：US06554046B1

    公开(公告)日：2003-04-29

    申请号：US09723467

    申请日：2000-11-27

    申请人： Michael A. Bryan ,  James K. Kai

    发明人： Michael A. Bryan ,  James K. Kai

    IPC分类号： B32B3500

    CPC分类号： B32B43/006 ,  B28D5/0011 ,  B28D5/0023 ,  B28D5/0064 ,  B28D5/0082 ,  H01L21/67092 ,  Y10T29/53683 ,  Y10T156/1939 ,  Y10T225/12 ,  Y10T225/18 ,  Y10T225/30 ,  Y10T225/386

    摘要： A cleaving tool provides pressurized gas to the edge of a substrate to cleave the substrate at a selected interface. A substrate, such as a bonded substrate, is loaded into the cleaving tool, and two halves of the tool are brought together to apply a selected pressure to the substrate. A compliant pad of selected elastic resistance provides support to the substrate while allowing the substrate to expand during the cleaving process. Bringing the two halves of the tool together also compresses an edge seal against the perimeter of the substrate. A thin tube connected to a high-pressure gas source extends through the edge seal and provides a burst of gas to separate the substrate into at least two sheets. In a further embodiment, the perimeter of the substrate is struck with an edge prior to applying the gas pressure.

    摘要翻译： 切割工具将加压气体提供到衬底的边缘以在所选择的界面处切割衬底。 衬底（例如键合衬底）被装载到劈开工具中，并且工具的两半被聚集在一起以将选择的压力施加到衬底上。 所选择的弹性阻力的柔性衬垫提供对衬底的支撑，同时允许衬底在裂开过程期间膨胀。 将工具的两个一半带到一起也可压缩衬底周边的边缘密封。 连接到高压气体源的细管延伸穿过边缘密封件并且提供气泡，以将基底分离成至少两个片。 在另一个实施例中，在施加气体压力之前，衬底的周边被边缘撞击。

    METHOD FOR FORMING SELF-ALIGNED DIELECTRIC CAP ABOVE FLOATING GATE
    7.
    发明申请
    METHOD FOR FORMING SELF-ALIGNED DIELECTRIC CAP ABOVE FLOATING GATE 有权
    在浮动门上形成自对准电介质盖的方法

    公开(公告)号：US20100081267A1

    公开(公告)日：2010-04-01

    申请号：US12242857

    申请日：2008-09-30

    申请人： Vinod Robert Purayath ,  George Matamis ,  Takashi Orimoto ,  Henry Chien ,  James K. Kai

    发明人： Vinod Robert Purayath ,  George Matamis ,  Takashi Orimoto ,  Henry Chien ,  James K. Kai

    IPC分类号： H01L21/3205

    CPC分类号： H01L21/28273 ,  H01L27/11519 ,  H01L27/11521 ,  H01L29/513 ,  H01L29/7881

    摘要： A method for fabricating a non-volatile storage element. The method comprises forming a layer of polysilicon floating gate material over a substrate and forming a layer of nitride at the surface of the polysilicon floating gate material. Floating gates are formed from the polysilicon floating gate material. Individual dielectric caps are formed from the nitride such that each individual nitride dielectric cap is self-aligned with one of the plurality of floating gates. An inter-gate dielectric layer is formed over the surface of the dielectric caps and the sides of the floating gates. Control gates are then formed with the inter-gate dielectric layer separating the control gates from the floating gates. The layer of nitride may be formed using SPA (slot plane antenna) nitridation. The layer of nitride may be formed prior to or after etching of the polysilicon floating gate material to form floating gates.

    摘要翻译： 一种用于制造非易失性存储元件的方法。 该方法包括在衬底上形成多晶硅浮栅材料层，并在多晶硅浮栅材料的表面形成一层氮化物。 浮栅由多晶硅浮栅材料形成。 各个绝缘盖由氮化物形成，使得每个单独的氮化物介电帽与多个浮动栅之一自对准。 在电介质盖的表面和浮动栅极的侧面上形成栅极间介电层。 然后，栅极介电层与控制栅极与浮动栅极分离形成控制栅极。 可以使用SPA（槽平面天线）氮化形成氮化物层。 可以在蚀刻多晶硅浮栅材料之前或之后形成氮化物层以形成浮栅。

    Self-Aligned Planar Flash Memory And Methods Of Fabrication
    8.
    发明申请
    Self-Aligned Planar Flash Memory And Methods Of Fabrication 审中-公开
    自对平面闪存及其制作方法

    公开(公告)号：US20130105881A1

    公开(公告)日：2013-05-02

    申请号：US13646500

    申请日：2012-10-05

    申请人： James K. Kai ,  Vinod R. Purayath ,  George Matamis ,  Nima Mokhlesi ,  Cuong Trinh

    发明人： James K. Kai ,  Vinod R. Purayath ,  George Matamis ,  Nima Mokhlesi ,  Cuong Trinh

    IPC分类号： H01L29/788 ,  H01L21/762 ,  H01L21/336

    CPC分类号： H01L27/11519 ,  H01L27/11524 ,  H01L29/42332 ,  H01L29/66825

    摘要： A non-volatile memory fabrication process includes the formation of a complete memory cell layer stack before isolation region formation. The memory cell layer stack includes an additional place holding control gate layer. After forming the layer stack columns, the additional control gate layer will be incorporated between an overlying control gate layer and underlying intermediate dielectric layer. The additional control gate layer is self-aligned to isolation regions between columns while the overlying control gate layer is etched into lines for contact to the additional control gate layer. In one embodiment, the placeholder control gate layer facilitates a contact point to the overlying control gate layer such that contact between the control gate layers and the charge storage layer is not required for select gate formation.

    摘要翻译： 非易失性存储器制造工艺包括在形成隔离区之前形成完整的存储单元层堆叠。 存储单元层堆叠包括附加位置保持控制栅层。 在形成层堆叠列之后，附加的控制栅层将被并入在覆盖的控制栅极层和下面的中间介质层之间。 附加控制栅极层与柱之间的隔离区域自对准，同时将覆盖的控制栅极层蚀刻成用于与附加控制栅极层接触的线。 在一个实施例中，占位符控制栅极层有助于与上覆控制栅极层的接触点，使得选择栅极形成不需要控制栅极层与电荷存储层之间的接触。

    Method of forming dielectric layer above floating gate for reducing leakage current
    9.
    发明授权
    Method of forming dielectric layer above floating gate for reducing leakage current 有权
    在浮栅上形成介质层以减少漏电流的方法

    公开(公告)号：US07915124B2

    公开(公告)日：2011-03-29

    申请号：US12170321

    申请日：2008-07-09

    申请人： James K. Kai ,  Dana Lee ,  Takashi Whitney Orimoto ,  Vinod R. Purayath ,  George Matamis ,  Henry Chin

    发明人： James K. Kai ,  Dana Lee ,  Takashi Whitney Orimoto ,  Vinod R. Purayath ,  George Matamis ,  Henry Chin

    IPC分类号： H01L21/8247

    CPC分类号： H01L27/11521 ,  H01L21/28273

    摘要： A method of fabricating a memory system is disclosed that includes a set of non-volatile storage elements. The method includes forming a floating gate having a top and at least two sides. A dielectric cap is formed at the top of the floating gate. An inter-gate dielectric layer is formed around the at least two sides of the floating gate and over the top of the dielectric cap. A control gate is formed over the top of the floating gate, the inter-gate dielectric layer separates the control gate from the floating gate. In one aspect, forming the dielectric cap includes implanting oxygen in the top of the floating gate and heating the floating gate to form the dielectric cap from the implanted oxygen and silicon from which the floating gate was formed.

    摘要翻译： 公开了一种制造存储器系统的方法，其包括一组非易失性存储元件。 该方法包括形成具有顶部和至少两个侧面的浮动栅极。 在浮动栅极的顶部形成介电盖。 在浮栅的至少两侧并且在电介质盖的顶部之上形成栅极间电介质层。 控制栅极形成在浮置栅极的顶部之上，栅极间介质层将控制栅极与浮动栅极分离。 在一个方面，形成电介质盖包括在浮置栅极的顶部注入氧并且加热浮动栅极以从形成浮栅的注入的氧和硅形成电介质盖。