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1.发明授权Light-emitting diodes with loop and strip electrodes and with wide medial sections 有权具有环形和带状电极的发光二极管以及宽的中间部分公开(公告)号：US06642548B1
公开(公告)日：2003-11-04
申请号：US09692953
申请日：2000-10-20
IPC分类号： H01L3300
摘要： Light emitting diodes such as those formed from gallium nitride based semiconductors are provided with electrode and pad structures which facilitate current spreading. The LED may be formed as a die with a lower contact surface and a mesa projecting upwardly from the lower contact surface. An electrode on the lower contact surface may be in the form of a ring substantially encircling the mesa. In other arrangements, the pad and/or electrode on the lower contact surface is disposed in an indentation on one edge of the mesa whereas the pad on the top of the mesa is disposed adjacent the opposite edge of the mesa.
摘要翻译： 诸如由基于氮化镓的半导体形成的发光二极管设置有便于电流扩散的电极和焊盘结构。 LED可以形成为具有下接触表面的模具和从下接触表面向上突出的台面。 下接触表面上的电极可以是基本上环绕台面的环的形式。 在其他布置中，下接触表面上的焊盘和/或电极设置在台面的一个边缘上的凹陷中，而台面的顶部上的焊盘邻近台面的相对边缘设置。
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公开(公告)号：US06902990B2
公开(公告)日：2005-06-07
申请号：US10114099
申请日：2002-04-02
申请人： Mark Gottfried , Michael G. Brown , Ivan Eliashevich , Robert F. Karlicek, Jr. , James E. Nering
发明人： Mark Gottfried , Michael G. Brown , Ivan Eliashevich , Robert F. Karlicek, Jr. , James E. Nering
IPC分类号： B23K26/073 , B23K26/40 , H01L21/301 , H01L21/302 , H01L21/304 , H01L21/46 , H01L21/78 , H01L33/00 , H01L21/406
CPC分类号： B23K26/0738 , B23K26/066 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L21/3043 , H01L21/6836 , H01L21/78 , H01L33/0095 , H01L2221/68327 , H01L2221/6834 , H01L2924/0002 , Y10S438/94 , H01L2924/00
摘要： A method for separating a semiconductor wafer into several thousand devices or dies by laser ablation. Semiconductor wafers are initially pre-processed to create multiple devices, such as blue LEDs, on the wafers. The wafers are then mounted with tape coated with a generally high level adhesive. The mounted wafer is then placed on a vacuum chuck (which is itself positioned on a computer controlled positioning table) to hold it in place during the cutting process. The cutting surface is then covered with a protective layer to prevent contamination from the effluent resulting from the actual cutting process. A laser beam is generated and passed through optical elements and masks to create a pattern, such as a line or multiple lines. The patterned laser projection is directed at the wafer at a substantially normal angle and applied to the wafer until at least a partial cut is achieved through it. A mechanical separation process completes the separation when only a partial cut is achieved by the patterned laser projection. The dies are then transferred to a grip ring for further processing.
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公开(公告)号：US06653215B1
公开(公告)日：2003-11-25
申请号：US09971965
申请日：2001-10-05
IPC分类号： H01L2128
CPC分类号： H01L33/38 , H01L2933/0016
摘要： A contact for n-type III-V semiconductor such as GaN and related nitride-based semiconductors is formed by depositing Al,Ti,Pt and Au in that order on the n-type semiconductor and annealing the resulting stack, desirably at about 400-600° C. for about 1-10 minutes. The resulting contact provides a low-resistance, ohmic contact to the semiconductor and excellent bonding to gold leads.
摘要翻译： 通过在n型半导体上依次沉积Al，Ti，Pt和Au并且对所得到的叠层进行退火，最好在约400℃下，形成诸如GaN和相关氮化物基半导体的n型III-V半导体的触点， 600℃约1-10分钟。 所得到的接触提供了对半导体的低电阻，欧姆接触和与金引线的极好接合。
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公开(公告)号：US06413839B1
公开(公告)日：2002-07-02
申请号：US09178287
申请日：1998-10-23
申请人： Michael G. Brown , Ivan Eliashevich , Mark Gottfried , Robert F. Karlicek, Jr. , James E. Nering
发明人： Michael G. Brown , Ivan Eliashevich , Mark Gottfried , Robert F. Karlicek, Jr. , James E. Nering
IPC分类号： H01L2146
CPC分类号： B23K26/0738 , B23K26/066 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L21/3043 , H01L21/6836 , H01L21/78 , H01L33/0095 , H01L2221/68327 , H01L2221/6834 , H01L2924/0002 , Y10S438/94 , H01L2924/00
摘要： A method for separating a semiconductor wafer into several thousand devices or dies by laser ablation. Semiconductor wafers are initially pre-processed to create multiple devices, such as blue LEDs, on the wafers. The wafers are then mounted with tape coated with a generally high level adhesive. The mounted wafer is then placed on a vacuum chuck (which is itself positioned on a computer controlled positioning table) to hold it in place during the cutting process. The cutting surface is then covered with a protective layer to prevent contamination from the effluent resulting from the actual cutting process. A laser beam is generated and passed through optical elements and masks to create a pattern, such as a line or multiple lines. The patterned laser projection is directed at the wafer at a substantially normal angle and applied to the wafer until at least a partial cut is achieved through it. A mechanical separation process completes the separation when only a partial cut is achieved by the patterned laser projection. The dies are then transferred to a grip ring for further processing.
摘要翻译： 通过激光烧蚀将半导体晶片分离成数千个器件或管芯的方法。 半导体晶片最初被预处理以在晶片上产生多个器件，例如蓝色LED。 然后将晶片安装在涂有一般高水平粘合剂的胶带上。 然后将安装的晶片放置在真空吸盘（其本身位于计算机控制的定位台上），以在切割过程中将其保持在适当位置。 然后用保护层覆盖切割表面，以防止来自实际切割过程的流出物的污染。 生成激光束并通过光学元件和掩模以产生图案，例如线或多条线。 图案化的激光投影以基本上正常的角度指向晶片，并施加到晶片，直到通过它至少实现部分切割。 当通过图案化的激光投影仅实现部分切割时，机械分离过程完成分离。 然后将模具转移到握环以进一步处理。
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公开(公告)号：US07842547B2
公开(公告)日：2010-11-30
申请号：US10584434
申请日：2004-12-21
CPC分类号： H01L33/0079 , H01L33/62 , H01L2224/48091 , H01L2924/10253 , H01L2924/12041 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： In a method for fabricating a flip-chip light emitting diode device, epitaxial layers are deposited on a sapphire growth substrate to produce an epitaxial wafer. A plurality of light emitting diode devices are fabricated on the epitaxial wafer. The epitaxial wafer is diced to generate a device die. The device die is flip chip bonded to a mount. The flip chip bonding includes securing the device die to the mount by bonding at least one electrode of the device die to at least one bonding pad of the mount. Subsequent to the flip chip bonding, the growth substrate of the device die is removed via the application of laser light.
摘要翻译： 在制造倒装芯片发光二极管器件的方法中，将外延层沉积在蓝宝石生长衬底上以产生外延晶片。 在外延晶片上制造多个发光二极管器件。 切割外延晶片以产生器件裸片。 器件芯片被倒装芯片结合到安装座。 倒装芯片接合包括通过将器件管芯的至少一个电极接合到安装件的至少一个接合焊盘来将器件裸片固定到安装座。 在倒装芯片接合之后，通过施加激光来去除器件裸片的生长衬底。
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公开(公告)号：US20100181584A1
公开(公告)日：2010-07-22
申请号：US12304533
申请日：2006-07-11
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/62 , H01L33/64 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： A light emitting device includes a stack of semiconductor layers defining a light emitting pn junction and a dielectric layer disposed over the stack of semiconductor layers. The dielectric layer has a refractive index substantially matching a refractive index of the stack of semiconductor layers. The dielectric layer has a principal surface distal from the stack of semiconductor layers. The distal principal surface includes patterning, roughening, or texturing configured to promote extraction of light generated in the stack of semiconductor layers.
摘要翻译： 发光器件包括限定发光pn结的半导体层的叠层和设置在半导体层堆叠上的电介质层。 电介质层的折射率基本上与半导体层叠层的折射率相匹配。 电介质层具有远离半导体层堆叠的主表面。 远端主表面包括图案化，粗糙化或纹理化，其被配置为促进在半导体层堆叠中产生的光的提取。
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公开(公告)号：US07015516B2
公开(公告)日：2006-03-21
申请号：US10417000
申请日：2001-11-14
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： A light-emitting microelectronic package includes a light-emitting diode (110) having a first region (114) of a first conductivity type, a second region (116) of a second conductivity type, and a light-emitting p-n junction (118) between the first and second regions. The light-emitting diode defines a lower contact surface (120) and a mesa (122) projecting upwardly from the lower contact surface. The first region (114) of a first conductivity type is disposed in the mesa (122) and defines a top surface of the mesa, and the second region (116) of a second conductivity type defines the lower contact surface that substantially surrounds the mesa (122). The mesa includes at least one sidewall (130) extending between the top surface (124) of the mesa and the lower contact surface (120), the at least one sidewall (130) having a roughened surface for optimizing light extraction from the package.
摘要翻译： 发光微电子封装包括具有第一导电类型的第一区域（114）和第二导电类型的第二区域（116）和发光pn结（118）的发光二极管（110） 在第一和第二区域之间。 发光二极管限定从下接触表面向上突出的下接触表面（120）和台面（122）。 第一导电类型的第一区域（114）设置在台面（122）中并且限定台面的顶表面，并且第二导电类型的第二区域（116）限定基本上围绕台面的下接触表面 （122）。 台面包括在台面的顶表面（124）和下接触表面（120）之间延伸的至少一个侧壁（130），所述至少一个侧壁（130）具有粗糙表面，用于优化从包装中的光提取。
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公开(公告)号：US06958498B2
公开(公告)日：2005-10-25
申请号：US10256402
申请日：2002-09-27
CPC分类号： H01L33/38 , H01L33/20 , H01L2924/0002 , H01L2924/00
摘要： Light emitting diodes are provided with electrode and pad structures that facilitate current spreading and heat sinking. A light emitting diode may be formed as a die with a stacked structure having a first region and a mesa projecting from a surface of the first region. A first electrode may substantially cover the mesa and have a plurality of pads disposed thereon maximizing a contact area in relation to the first electrode. A second electrode may be disposed as a trace on the surface of the first region, the trace having a spiral, segmented/interdigitated, loop or pattern. Optionally, the trace includes corner spikes projecting outwardly toward edges of the first electrode.
摘要翻译： 发光二极管设有电极和焊盘结构，便于电流扩散和散热。 发光二极管可以形成为具有从第一区域的表面突出的第一区域和台面的层叠结构的管芯。 第一电极可以基本上覆盖台面并且具有设置在其上的多个焊盘使相对于第一电极的接触面积最大化。 第二电极可以作为迹线设置在第一区域的表面上，迹线具有螺旋，分段/叉指，环形或图案。 可选地，迹线包括朝向第一电极的边缘向外突出的角尖。
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9.发明授权Flip-chip light emitting diode with indium-tin-oxide based reflecting contacts 有权倒装芯片发光二极管，具有基于铟锡氧化物的反射触点公开(公告)号：US07358539B2
公开(公告)日：2008-04-15
申请号：US10249436
申请日：2003-04-09
IPC分类号： H01L29/22 , H01L29/227 , H01L33/00 , H01L23/48
CPC分类号： H01L33/20 , H01L33/405 , H01L33/42 , H01L33/62 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/16 , H01L2933/0016 , H01L2224/05644 , H01L2924/00014 , H01L2224/05124 , H01L2224/05139
摘要： A flip chip light emitting diode die (12) includes a light-transmissive substrate (20) and a plurality of semiconductor layers (22) are disposed on the light-transmissive substrate (20). The semiconductor layers (22) define a light-generating p/n junction. An electrode (30) is formed on the semiconductor layers (22) for flip-chip bonding the diode die (12) to an associated mount (14). The electrode (30) includes an optically transparent layer (42) formed of a substantially optically transparent material adjacent to the semiconductor layers (22) that makes ohmic contact therewith, and a reflective layer (44) adjacent to the optically transparent layer (42) and in electrically conductive communication therewith.
摘要翻译： 倒装芯片发光二极管管芯（12）包括透光基板（20），并且多个半导体层（22）设置在透光基板（20）上。 半导体层（22）限定发光p / n结。 在半导体层（22）上形成电极（30），用于将二极管管芯（12）倒装成相关的安装件（14）。 电极（30）包括由与其与其形成欧姆接触的半导体层（22）相邻的基本上光学透明的材料形成的光学透明层（42）和与光学透明层（42）相邻的反射层（44） 并与其导电连通。
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10.发明申请公开(公告)号：US20070096120A1
公开(公告)日：2007-05-03
申请号：US11260784
申请日：2005-10-27
IPC分类号： H01L31/12
CPC分类号： H01L33/20
摘要： An LED device (90) includes: an epitaxial structure (100) having a plurality of layers of semiconductor material and forming an active light-generating region (120) which generates light in response to electrical power being supplied to the LED device (90); and, a substrate (200) that is substantially transparent in a wavelength range corresponding to the light generated by the active light-generating region (120). The substrate has first and second opposing end faces (202, 206) and a plurality of side walls (210) extending therebetween, including a first side wall having a first portion thereof that defines a first surface (212, 214, 216, 218) which is not substantially normal to the first face (202) of the substrate (200). The epitaxial structure (100) is disposed on the first face (202) of the substrate (200).
摘要翻译： LED器件（90）包括：具有多层半导体材料的外延结构（100），并形成响应供给LED器件（90）的电力产生光的有源发光区域（120） ; 以及在与由所述有源发光区域（120）产生的光对应的波长范围内基本透明的基板（200）。 衬底具有第一和第二相对的端面（202,206）和在其之间延伸的多个侧壁（210），包括第一侧壁，其具有限定第一表面（212,214,216,218）的第一部分， 其基本上不垂直于衬底（200）的第一面（202）。 外延结构（100）设置在基板（200）的第一面（202）上。
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