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45 条记录 (耗时 0.019 秒)

    Method to modulate etch rate in SLAM
    7.
    发明申请
    Method to modulate etch rate in SLAM 失效
    在SLAM中调制蚀刻速率的方法

    公开(公告)号：US20050106886A1

    公开(公告)日：2005-05-19

    申请号：US10715956

    申请日：2003-11-17

    申请人： Michael Goodner ,  Robert Meagley ,  Kevin O'Brien

    发明人： Michael Goodner ,  Robert Meagley ,  Kevin O'Brien

    IPC分类号： H01L21/311 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/76808 ,  H01L21/31144 ,  H01L21/76802

    摘要： Several techniques are described for modulating the etch rate of a sacrificial light absorbing material (SLAM) by altering its composition so that it matches the etch rate of a surrounding dielectric. This is particularly useful in a dual damascene process where the SLAM fills a via opening and is etched along with a surrounding dielectric material to form trenches overlying the via opening.

    摘要翻译： 描述了几种用于通过改变其组成以使其与周围电介质的蚀刻速率相匹配来调节牺牲光吸收材料（SLAM）的蚀刻速率的技术。 这在双镶嵌工艺中特别有用，其中SLAM填充通孔开口并与周围的电介质材料一起蚀刻以形成覆盖通孔开口的沟槽。

    Layered films formed by controlled phase segregation
    8.
    发明申请
    Layered films formed by controlled phase segregation 有权
    通过控制相分离形成的层状膜

    公开(公告)号：US20060183348A1

    公开(公告)日：2006-08-17

    申请号：US11060843

    申请日：2005-02-17

    申请人： Robert Meagley ,  Michael Leeson ,  Michael Goodner ,  Bob Leet ,  Michael McSwiney ,  Shan Clark

    发明人： Robert Meagley ,  Michael Leeson ,  Michael Goodner ,  Bob Leet ,  Michael McSwiney ,  Shan Clark

    IPC分类号： H01L21/31

    CPC分类号： H01L21/76808 ,  G03F7/091 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/76822 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76835

    摘要： Multiple-layer films in integrated circuit processing may be formed by the phase segregation of a single composition formed above a semiconductor substrate. The composition is then induced to phase segregate into at least a first continuous phase and a second continuous phase. The composition may be formed of two or more components that phase segregate into different continuous layers. The composition may also be a single component that breaks down upon activation into two or more components that phase segregate into different continuous layers. Phase segregation may be used to form, for example, a sacrificial light absorbing material (SLAM) and a developer resistant skin, a dielectric layer and a hard mask, a photoresist and an anti-reflective coating (ARC), a stress buffer coating and a protective layer on a substrate package, and light interference layers.

    摘要翻译： 集成电路处理中的多层膜可以通过在半导体衬底上形成的单一组合物的相分离来形成。 然后将组合物诱导相分离成至少第一连续相和第二连续相。 组合物可以由相分离成不同连续层的两种或多种组分形成。 组合物还可以是单一组分，其在活化时分解成两个或多个相分离成不同连续层的组分。 相分离可用于形成例如牺牲光吸收材料（SLAM）和显影剂抗性皮肤，介电层和硬掩模，光致抗蚀剂和抗反射涂层（ARC），应力缓冲涂层和 衬底封装上的保护层，以及光干涉层。

    Increasing the etch resistance of photoresists
    10.
    发明申请
    Increasing the etch resistance of photoresists 审中-公开
    提高光致抗蚀剂的耐蚀刻性

    公开(公告)号：US20050074981A1

    公开(公告)日：2005-04-07

    申请号：US10679793

    申请日：2003-10-06

    申请人： Robert Meagley ,  Michael Goodner

    发明人： Robert Meagley ,  Michael Goodner

    IPC分类号： G03F7/40 ,  H01L21/027 ,  H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/0273 ,  G03F7/40

    摘要： Materials may be utilized as photoresists which have relatively plasma poor etch resistance. Examples include acrylates and fluorinated polymers, which have very good transparency but poor etch resistance. Materials with relatively poor etch resistance may be first applied to the semiconductor wafer and patterned. After they have been patterned, their etch resistance may be improved. For example, the etch resistance may be improved by applying an absorbate which may be cross-linked or polymerized to increase the etch resistance of the already patterned material. Thereafter, the material with the improved etch resistance may be used as an etching mask.

    摘要翻译： 可以将材料用作具有相对等离子体不良耐蚀刻性的光致抗蚀剂。 实例包括丙烯酸酯和氟化聚合物，其具有非常好的透明度，但耐腐蚀性差。 可以首先将具有相对差的耐蚀刻性的材料施加到半导体晶片并进行图案化。 在它们被图案化之后，可以提高其耐蚀刻性。 例如，可以通过施加可以被交联或聚合的吸收材料来提高耐蚀刻性以提高已经图案化的材料的耐蚀刻性。 此后，可以使用具有改善的耐蚀刻性的材料作为蚀刻掩模。