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    INTEGRATED CIRCUIT WITH STRESS GENERATOR FOR STRESSING TEST DEVICES
    3.
    发明申请
    INTEGRATED CIRCUIT WITH STRESS GENERATOR FOR STRESSING TEST DEVICES 有权
    用于应力测试装置的应力发生器集成电路

    公开(公告)号：US20130293250A1

    公开(公告)日：2013-11-07

    申请号：US13462942

    申请日：2012-05-03

    申请人： William McMahon ,  Richard Francis ,  Randy W. Mann

    发明人： William McMahon ,  Richard Francis ,  Randy W. Mann

    IPC分类号： G01R31/3187

    CPC分类号： G01R31/30 ,  G11C11/41 ,  G11C29/06

    摘要： An integrated circuit device includes at least one test device and a stress generator coupled to the test device and operable to cycle the at least one test device to generate an AC stress. A method for testing an integrated circuit device including at least one test device and a stress generator coupled to the test device includes enabling the stress generator to cycle the at least one test device to generate an AC stress and measuring at least one parameter of the test device to determine an effect of the AC stress.

    摘要翻译： 集成电路装置包括耦合到测试装置的至少一个测试装置和应力发生器，并可操作以循环至少一个测试装置以产生AC应力。 一种用于测试包括耦合到测试装置的至少一个测试装置和应力发生器的集成电路装置的方法，包括使所述应力发生器能够循环所述至少一个测试装置以产生AC应力并测量所述测试的至少一个参数 确定AC应力的作用的装置。

    Structure and method for a fast recovery rectifier structure
    4.
    发明授权
    Structure and method for a fast recovery rectifier structure 有权
    快速恢复整流器结构的结构和方法

    公开(公告)号：US07696540B2

    公开(公告)日：2010-04-13

    申请号：US11644578

    申请日：2006-12-22

    申请人： Richard Francis ,  Yang Yu Fan ,  Eric Johnson ,  Hy Hoang

    发明人： Richard Francis ,  Yang Yu Fan ,  Eric Johnson ,  Hy Hoang

    IPC分类号： H01L29/80

    CPC分类号： H01L29/872 ,  H01L27/0641 ,  H01L27/0814 ,  H01L27/0817 ,  H01L29/0623 ,  H01L29/7722 ,  H01L29/8083 ,  H01L29/861 ,  H01L29/8725

    摘要： An apparatus and method for a fast recovery rectifier structure. Specifically, the structure includes a substrate of a first dopant. A first epitaxial layer lightly doped with the first dopant is coupled to the substrate. A first metallization layer is coupled to the first epitaxial layer. A plurality of trenches is recessed into the first epitaxial layer, each of which is coupled to the metallization layer. The device also includes a plurality of wells each doped with a second dopant type, wherein each well is formed beneath and adjacent to a corresponding trench. A plurality of oxide layers is formed on walls and a bottom of a corresponding trench. A plurality of channel regions doped with the first dopant is formed within the first epitaxial layer between two corresponding wells. Each of the plurality of channel regions is more highly doped with the first dopant than the first epitaxial layer.

    摘要翻译： 一种快速恢复整流器结构的装置和方法。 具体地，该结构包括第一掺杂剂的衬底。 轻掺杂有第一掺杂剂的第一外延层耦合到衬底。 第一金属化层耦合到第一外延层。 多个沟槽凹陷到第一外延层中，每个沟槽耦合到金属化层。 该器件还包括多个孔，每个阱均掺杂有第二掺杂剂类型，其中每个阱形成在相应沟槽的下面并与其相邻。 多个氧化物层形成在相应沟槽的壁和底部上。 掺杂有第一掺杂剂的多个沟道区在两个对应的阱之间的第一外延层内形成。 多个沟道区中的每一个与第一外延层比第一掺杂物更加高掺杂。

    High voltage non punch through IGBT for switch mode power supplies
    5.
    发明授权
    High voltage non punch through IGBT for switch mode power supplies 有权
    用于开关电源的高压非穿通IGBT

    公开(公告)号：US07534666B2

    公开(公告)日：2009-05-19

    申请号：US11190602

    申请日：2005-07-27

    申请人： Richard Francis ,  Chiu Ng

    发明人： Richard Francis ,  Chiu Ng

    IPC分类号： H01L21/332

    CPC分类号： H01L29/7395 ,  H01L29/0834 ,  H01L29/41725 ,  H01L29/66333 ,  Y10S438/904

    摘要： A process for forming an NPT IGBT in a thin N type silicon wafer in which the bottom surface of a thin silicon wafer (100 microns thick or less) has a shallow reduced lifetime region in its bottom formed by a light species atom implant to a depth of less than about 2.5 microns. A P+ transparent collector region about 0.5 microns deep is formed in the bottom of the damaged region by a boron implant. A collector contact of Al/Ti/NiV and Ag is sputtered onto the collector region and is annealed at 200° C. to 400° C. for 30 to 60 minutes. A pre-anneal step before applying the collector metal can be carried out in vacuum at 300° C. to 400° C. for 30 to 60 seconds.

    摘要翻译： 一种用于在薄N型硅晶片中形成NPT IGBT的工艺，其中薄硅晶片（100微米厚或更小）的底表面在其底部具有浅的减少的寿命区域，其通过光物质原子注入形成深度 小于约2.5微米。 通过硼注入在损伤区域的底部形成约0.5微米深的P +透明集电极区域。 将Al / Ti / NiV和Ag的集电极触点溅射到集电极区域，并在200℃至400℃退火30至60分钟。 在施加集电体金属之前的预退火步骤可以在300℃至400℃的真空中进行30至60秒。

    Angled implant for shorter trench emitter
    6.
    发明授权
    Angled implant for shorter trench emitter 有权
    用于短沟渠发射器的角度植入

    公开(公告)号：US07335947B2

    公开(公告)日：2008-02-26

    申请号：US11137040

    申请日：2005-05-24

    申请人： Richard Francis ,  Chiu Ng

    发明人： Richard Francis ,  Chiu Ng

    IPC分类号： H01L21/74 ,  H01L29/06 ,  H01L29/36

    CPC分类号： H01L29/7813 ,  H01L21/26586 ,  H01L29/0839 ,  H01L29/0847 ,  H01L29/66348 ,  H01L29/7397

    摘要： An insulated gate trench type semiconductor device having L-shaped diffused regions, each diffused region having a vertically oriented portion and a horizontally oriented portion extending laterally from the vertically oriented portion, and a method for manufacturing the device in which the vertically oriented portion of each L-shaped diffused region is formed by directing dopants at an angle toward a sidewall of a trench to form the vertically oriented portion using the edge of the opposing sidewall of the trench as a mask.

    摘要翻译： 一种具有L形扩散区域的绝缘栅沟槽型半导体器件，每个扩散区域具有垂直取向部分和从垂直取向部分横向延伸的水平取向部分，以及制造该器件的方法，其中每个 通过使用沟槽的相对侧壁的边缘作为掩模将掺杂剂以一定角度引导到沟槽的侧壁以形成垂直取向的部分来形成L形扩散区域。

    Ultrafast recovery diode
    7.
    发明申请
    Ultrafast recovery diode 有权
    超快恢复二极管

    公开(公告)号：US20070145414A1

    公开(公告)日：2007-06-28

    申请号：US11320313

    申请日：2005-12-27

    申请人： Richard Francis ,  Jian Li ,  Yang Fan ,  Eric Johnson

    发明人： Richard Francis ,  Jian Li ,  Yang Fan ,  Eric Johnson

    IPC分类号： H01L23/58

    CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/739 ,  H01L29/861 ,  H01L29/868 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An ultrafast recovery diode. In a first embodiment, a rectifier device comprises a substrate of a first polarity, a lightly doped layer of the first polarity coupled to the substrate and a metallization layer disposed with the lightly doped layer. The ultrafast recovery diode includes a plurality of wells, separated from one another, formed in the lightly doped layer, comprising doping of a second polarity. The plurality of wells connect to the metallization layer. The ultrafast recovery diode further includes a plurality of regions, located between wells of said plurality of wells, more highly doped of the first polarity than the lightly doped layer.

    摘要翻译： 超快恢复二极管。 在第一实施例中，整流器件包括第一极性的衬底，耦合到衬底的第一极性的轻掺杂层和与轻掺杂层一起设置的金属化层。 超快恢复二极管包括在轻掺杂层中形成的彼此分离的多个阱，包括掺杂第二极性。 多个阱连接到金属化层。 超快恢复二极管还包括多个区域，位于所述多个阱的阱之间，比轻掺杂层更高掺杂的第一极性。

    Fast recovery diode and method for its manufacture
    10.
    发明授权
    Fast recovery diode and method for its manufacture 有权
    快速恢复二极管及其制造方法

    公开(公告)号：US06261874B1

    公开(公告)日：2001-07-17

    申请号：US09593333

    申请日：2000-06-14

    申请人： Richard Francis ,  Chiu Ng

    发明人： Richard Francis ,  Chiu Ng

    IPC分类号： H01L21332

    CPC分类号： H01L29/66136 ,  H01L29/0619 ,  H01L29/32 ,  H01L29/872 ,  Y10S257/91

    摘要： A soft recovery diode is made by first implanting helium into the die to a location below the P/N junction and the implant annealed. An E-beam radiation process then is applied to the entire wafer and is also annealed. The diode then has very soft recovery characteristics without requiring heavy metal doping.

    摘要翻译： 软恢复二极管通过首先将氦注入管芯到位于P / N结下方的位置并进行退火而制成。 然后将电子束辐射过程施加到整个晶片并且也被退火。 二极管然后具有非常柔软的恢复特性，而不需要重金属掺杂。