Waterbased high abrasion resistant coating
    1.
    发明申请
    Waterbased high abrasion resistant coating 有权
    水基高耐磨涂层

    公开(公告)号:US20050192391A1

    公开(公告)日:2005-09-01

    申请号:US10783315

    申请日:2004-02-20

    IPC分类号: C08K3/38 C09D5/02 C09D175/06

    摘要: A coating for weatherstrips, windshield wipers, door seals, trunk seals, sunroof seals, windshield seals and the like. The coating comprises a water-based formula that provides high abrasion resistance and, optimally, also provides excellent weathering resistance. The abrasion resistance property is achieved via a combination of boron nitride and a high molecular weight silicone resin. Flexibility and weathering resistance are achieved via the addition of an acrylic/polyurethane/fluoropolymer resin binder blend and high UV-stabilizers and absorbers. Also provided is a method of manufacturing such coatings that comprises the steps of pre-dispersing the boron nitride in water and then combining the pre-dispersed boron nitride with the silicone resin and other ingredients.

    摘要翻译: 用于风挡条,挡风玻璃刮水器,门密封件,行李箱密封件,天窗密封件,挡风玻璃密封件等的涂层。 该涂层包括提供高耐磨性的水性配方,并且最佳地也提供优异的耐候性。 耐磨性通过氮化硼和高分子量有机硅树脂的组合来实现。 通过添加丙烯酸/聚氨酯/含氟聚合物树脂粘合剂混合物和高UV稳定剂和吸收剂可实现柔韧性和耐候性。 还提供了制造这种涂层的方法,其包括将氮化硼预先分散在水中,然后将预分散的氮化硼与硅树脂和其它成分组合的步骤。

    PVD target support members and methods of making
    3.
    发明申请
    PVD target support members and methods of making 审中-公开
    PVD目标支持成员和制作方法

    公开(公告)号:US20060062686A1

    公开(公告)日:2006-03-23

    申请号:US10943369

    申请日:2004-09-17

    IPC分类号: C22C9/00

    摘要: A PVD target support member includes an alloy containing at least 90 wt % of a first metal and also containing a second metal and a third metal. The second metal increases electrical resistivity compared to an otherwise identical alloy lacking the second metal. The third metal increase tensile and/or yield strength compared to an otherwise identical alloy lacking the third metal. The alloy may exhibit a thermal stability during diffusion bonding to a target that meets or exceeds thermal stabilities of the otherwise identical alloy lacking the second metal and the otherwise identical alloy lacking the third metal. Another PVD target support member includes an alloy containing at least 90 wt % copper and also containing titanium and silver. The support member may be a backing plate.

    摘要翻译: PVD靶支撑构件包括含有至少90重量%的第一金属并且还含有第二金属和第三金属的合金。 与没有第二金属的其他相同的合金相比,第二种金属提高了电阻率。 与缺少第三种金属的其他相同的合金相比,第三种金属增加了拉伸和/或屈服强度。 该合金可以在扩散接合到目标物时表现出热稳定性,该热稳定性满足或超过缺少第二金属的另外相同的合金的热稳定性,以及缺少第三种金属的其它相同的合金。 另一个PVD靶支撑件包括含有至少90wt%铜并且还含有钛和银的合金。 支撑构件可以是背板。

    Manufacturing design and processing methods and apparatus for sputtering targets
    4.
    发明授权
    Manufacturing design and processing methods and apparatus for sputtering targets 有权
    溅射靶的制造设计及加工方法及装置

    公开(公告)号:US09279178B2

    公开(公告)日:2016-03-08

    申请号:US12109816

    申请日:2008-04-25

    IPC分类号: C22F1/00 C23C14/34 C22F1/18

    CPC分类号: C23C14/3414 C22F1/18

    摘要: Sputtering targets having a reduced burn-in time are disclosed that comprise: a) a heat-modified surface material having a substantially uniform crystallographic orientation, wherein at least part of the surface material was melted during heat-treatment, and b) a core material having an average grain size. Sputtering targets are also disclosed that include a heat-modified surface material having network of shallow trenches, alternating rounded peaks and valleys in the surface of the target or a combination thereof, wherein at least part of the surface material was melted during heat-treatment, and a core material having an average grain size. Methods of producing sputtering targets having reduced burn-in times comprises: a) providing a sputtering target comprising a sputtering surface having a sputter material and a crystal lattice, and b) heat-modifying the sputtering surface in order to melt at least part of the surface material and modify the crystal lattice. Methods of producing a sputtering target having a reduced burn-in time are also disclosed comprising: providing a sputtering target having a sputtering surface, wherein the sputtering surface comprises a damage layer, and modifying the sputtering surface by deplating a layer of material, pulsed-plating a layer of material or a combination thereof.

    摘要翻译: 公开了具有减少的老化时间的溅射靶,其包括:a)具有基本上均匀的结晶取向的热改性表面材料,其中至少部分表面材料在热处理期间熔化,以及b)芯材料 具有平均粒度。 还公开了溅射靶,其包括在靶的表面中具有浅沟槽,交替的圆形峰和谷的热改性表面材料或其组合,其中至少部分表面材料在热处理期间熔化, 和具有平均粒径的芯材。 制造具有减少的烧结时间的溅射靶的方法包括:a)提供溅射靶,其包括具有溅射材料和晶格的溅射表面,以及b)对所述溅射表面进行加热改性以熔化至少部分 表面材料并修饰晶格。 还公开了具有降低的烧成时间的溅射靶的制造方法,包括:提供具有溅射表面的溅射靶,其中所述溅射表面包括损伤层,并且通过将材料层去掉, 电镀一层材料或其组合。

    Chalcogenide PVD components and methods of formation
    5.
    发明申请
    Chalcogenide PVD components and methods of formation 审中-公开
    硫族元素PVD组分和形成方法

    公开(公告)号:US20070099332A1

    公开(公告)日:2007-05-03

    申请号:US11598177

    申请日:2006-11-09

    IPC分类号: H01L21/00

    摘要: A PVD component forming method includes identifying two or more solids having different compositions, homogeneously mixing particles of the solids using proportions which yield a bulk formula, consolidating the homogeneous particle mixture to obtain a rigid mass while applying pressure and using a temperature below the minimum temperature of melting or sublimation of the solids, and forming a PVD component including the mass. A chalcogenide PVD component includes a rigid mass containing a bonded homogeneous mixture of particles of two or more solids having different compositions, the mass having a microcomposite structure exhibiting a maximum feature size of 500 μm or less, and one or more of the solids containing a compound of two or more bulk formula elements. An alternative PVD component exhibits a uniform composition with less than 10% difference in atomic compositions from feature to feature.

    摘要翻译: PVD组分形成方法包括鉴定具有不同组成的两种或更多种固体,使用产生本体配方的比例均匀混合固体颗粒,在施加压力并使用低于最低温度的温度下固化均匀的颗粒混合物以获得刚性质量 的固体的熔融或升华,以及形成包括该物质的PVD组分。 硫族化物PVD组分包括含有两种或更多种具有不同组成的固体的粘合的均匀混合物的刚性物质,所述物质具有显示最大特征尺寸为500μm或更小的微复合结构,以及一种或多种含有 两种或多种主体配方元素的化合物。 替代的PVD组分显示出从特征到特征的原子组成差异小于10%的均匀组成。

    Methods of forming target/backing plate assemblies comprising ruthenium, methods of electrolytically processing ruthenium, and container-shaped physical vapor deposition targets comprising ruthenium
    6.
    发明申请
    Methods of forming target/backing plate assemblies comprising ruthenium, methods of electrolytically processing ruthenium, and container-shaped physical vapor deposition targets comprising ruthenium 审中-公开
    形成包含钌的目标/背板组件的方法,电解处理钌的方法和包含钌的容器形物理气相沉积靶

    公开(公告)号:US20050279637A1

    公开(公告)日:2005-12-22

    申请号:US10874848

    申请日:2004-06-22

    摘要: The invention includes a method of forming a target/backing plate assembly in which a backing plate construction is provided and a ruthenium-containing target is electrolytically deposited onto the backing plate construction. The backing plate construction can be in the form of a container shape having an interior region, and the ruthenium-containing target can be electrically deposited within the interior region of the container shape. The invention also includes target/backing plate constructions which have ruthenium-containing targets. The invention also includes a method of electrolytically processing ruthenium. A cathode is provided and an electrically conductive sacrificial material is provided over the cathode. A ruthenium-containing material is electrolytically deposited on the sacrificial material. The sacrificial material and the ruthenium-containing material are removed from the cathode, and then the ruthenium-containing material is separated from the sacrificial material.

    摘要翻译: 本发明包括一种形成目标/背板组件的方法,其中提供背板结构,并将含钌靶靶电解沉积到背板结构上。 背板结构可以是具有内部区域的容器形式,并且含钌靶可以在容器形状的内部区域内电沉积。 本发明还包括具有含钌靶的靶/背板结构。 本发明还包括电解处理钌的方法。 提供阴极并且在阴极上提供导电牺牲材料。 将含钌材料电解沉积在牺牲材料上。 从阴极去除牺牲材料和含钌材料,然后将含钌材料与牺牲材料分离。

    Novel Manufacturing Design and Processing Methods and Apparatus for Sputtering Targets
    8.
    发明申请
    Novel Manufacturing Design and Processing Methods and Apparatus for Sputtering Targets 有权
    用于溅射靶的新型制造设计和加工方法和装置

    公开(公告)号:US20080289958A1

    公开(公告)日:2008-11-27

    申请号:US12109816

    申请日:2008-04-25

    IPC分类号: C23C14/34

    CPC分类号: C23C14/3414 C22F1/18

    摘要: Sputtering targets having a reduced burn-in time are disclosed that comprise: a) a heat-modified surface material having a substantially uniform crystallographic orientation, wherein at least part of the surface material was melted during heat-treatment, and b) a core material having an average grain size. Sputtering targets are also disclosed that include a heat-modified surface material having network of shallow trenches, alternating rounded peaks and valleys in the surface of the target or a combination thereof, wherein at least part of the surface material was melted during heat-treatment, and a core material having an average grain size. Methods of producing sputtering targets having reduced burn-in times comprises: a) providing a sputtering target comprising a sputtering surface having a sputter material and a crystal lattice, and b) heat-modifying the sputtering surface in order to melt at least part of the surface material and modify the crystal lattice. Methods of producing a sputtering target having a reduced burn-in time are also disclosed comprising: providing a sputtering target having a sputtering surface, wherein the sputtering surface comprises a damage layer, and modifying the sputtering surface by deplating a layer of material, pulsed-plating a layer of material or a combination thereof

    摘要翻译: 公开了具有减少的老化时间的溅射靶,其包括:a)具有基本上均匀的结晶取向的热改性表面材料,其中至少部分表面材料在热处理期间熔化,以及b)芯材料 具有平均粒度。 还公开了溅射靶,其包括在靶的表面中具有浅沟槽,交替的圆形峰和谷的热改性表面材料或其组合,其中至少部分表面材料在热处理期间熔化, 和具有平均粒径的芯材。 制造具有减少的烧结时间的溅射靶的方法包括:a)提供溅射靶,其包括具有溅射材料和晶格的溅射表面,以及b)对所述溅射表面进行加热改性以熔化至少部分 表面材料并修饰晶格。 还公开了具有降低的烧成时间的溅射靶的制造方法,包括:提供具有溅射表面的溅射靶,其中所述溅射表面包括损伤层,并且通过将材料层去掉,来改变溅射表面, 电镀一层材料或其组合