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公开(公告)号：US20070145379A1
公开(公告)日：2007-06-28
申请号：US10588473
申请日：2004-12-22
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/20 , H01L33/62 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2924/01079 , H01L2924/12041 , H01L2224/05599
摘要： A light emitting device (A) includes a semiconductor die (100). The semiconductor die includes: an epitaxial structure (120) arranged on a substrate (160), the epitaxial structure forming an active light generating region (140) between a first layer (120n) on a first side of the active region and having a first conductivity type, and a second layer (120p) on a second side of the active region and having a second conductivity type, the second side of the active region being opposite the first side of the active region and the second conductivity type being different that the first conductivity type; a first contact (180n) in operative electrical communication with the active region via the first layer in the epitaxial structure, the first contact being arranged on a side of the epitaxial structure opposite the substrate; a second contact (180p) in operative electrical communication with the active region via the second layer in the epitaxial structure, the second contact being arranged on a side of the epitaxial structure opposite the substrate; a first contact trace corresponding to the first contact and defined at a surface thereof distal from the substrate, the first trace including at least one area designated for bonding (320n); and, a second contact trace corresponding the second contact and defined at a surface thereof distal from the substrate, the second trace including at least one area (320p) designated for bonding. Suitably, the first contact trace is substantially enclosed within the second contact trace.
摘要翻译： 发光器件（A）包括半导体管芯（100）。 所述半导体管芯包括：布置在衬底（160）上的外延结构（120），所述外延结构在所述有源区的第一侧上的第一层（120 n）之间形成有源光产生区（140），并且具有 第一导电类型和在有源区的第二侧上具有第二导电类型的第二层（120 p），有源区的第二面与有源区的第一侧相反，第二导电类型不同 第一种导电类型; 经由外延结构中的第一层与有源区域工作电连通的第一接触（180n），第一接触件布置在与衬底相对的外延结构的一侧上; 通过外延结构中的第二层与有源区域电连通的第二触点（180p），第二触点布置在与衬底相对的外延结构的一侧上; 第一接触迹线对应于第一接触并限定在其远离基底的表面，第一迹线包括指定用于键合的至少一个区域（320n）; 以及与所述第二接触相对应并限定在其远离所述基底的表面的第二接触迹线，所述第二迹线包括指定用于接合的至少一个区域（320 p）。 适当地，第一接触迹线基本上封闭在第二接触迹线内。
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公开(公告)号：US20060202223A1
公开(公告)日：2006-09-14
申请号：US11075974
申请日：2005-03-09
申请人： Michael Sackrison , Hari Venugopalan , Xiang Gao
发明人： Michael Sackrison , Hari Venugopalan , Xiang Gao
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/62 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05644 , H01L2224/16 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： In a method for fabricating a flip-chip light emitting diode device, a submount wafer is populated with a plurality of the light emitting diode dies. Each device die is flip-chip bonded to the submount. Subsequent to the flip-chip bonding, a growth substrate is removed. The entire submount is immersed in the etchant solution, exposed to the light for a prespecified period of time, removed from the solution, dried and diced into a plurality of LEDs., The LEDs are immediately packaged without any further processing.
摘要翻译： 在制造倒装芯片发光二极管装置的方法中，副载荷晶片装有多个发光二极管管芯。 每个器件芯片倒装芯片连接到基座。 在倒装芯片接合之后，去除生长衬底。 将整个底座浸入蚀刻剂溶液中，暴露于预定时间段内的光，从溶液中取出，干燥并切成多个LED。立即封装LED，无需进一步处理。
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公开(公告)号：US20100181584A1
公开(公告)日：2010-07-22
申请号：US12304533
申请日：2006-07-11
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/62 , H01L33/64 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： A light emitting device includes a stack of semiconductor layers defining a light emitting pn junction and a dielectric layer disposed over the stack of semiconductor layers. The dielectric layer has a refractive index substantially matching a refractive index of the stack of semiconductor layers. The dielectric layer has a principal surface distal from the stack of semiconductor layers. The distal principal surface includes patterning, roughening, or texturing configured to promote extraction of light generated in the stack of semiconductor layers.
摘要翻译： 发光器件包括限定发光pn结的半导体层的叠层和设置在半导体层堆叠上的电介质层。 电介质层的折射率基本上与半导体层叠层的折射率相匹配。 电介质层具有远离半导体层堆叠的主表面。 远端主表面包括图案化，粗糙化或纹理化，其被配置为促进在半导体层堆叠中产生的光的提取。
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4.发明申请Small footprint high power light emitting package with plurality of light emitting diode chips 审中-公开具有多个发光二极管芯片的小尺寸大功率发光封装公开(公告)号：US20080121902A1
公开(公告)日：2008-05-29
申请号：US11517053
申请日：2006-09-07
IPC分类号： H01L33/00
CPC分类号： H01L25/0756 , H01L25/0753 , H01L33/0079 , H01L2924/0002 , H01L2924/00
摘要： A light emitting package includes a support (12, 112, 212) defining a support surface (14). A first light emitting diode chip (20, 120, 220) is secured to the supporting surface and is configured to emit light having a first spectral distribution. A second light emitting diode chip (22, 122, 123, 222) is secured to the first light emitting diode chip. The second light emitting diode chip is configured to emit light having a second spectral distribution different from the first spectral distribution. Optionally, a third light emitting diode chip (223) is disposed on the second light emitting diode chip (222).
摘要翻译： 发光包装包括限定支撑表面（14）的支撑件（12,112,212）。 第一发光二极管芯片（20,120,220）固定到支撑表面并且被配置为发射具有第一光谱分布的光。 第二发光二极管芯片（22,122,123,222）固定到第一发光二极管芯片。 第二发光二极管芯片被配置为发射具有与第一光谱分布不同的第二光谱分布的光。 可选地，第三发光二极管芯片（223）设置在第二发光二极管芯片（222）上。
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公开(公告)号：US07843074B2
公开(公告)日：2010-11-30
申请号：US11519402
申请日：2006-09-12
CPC分类号： H01L33/62 , H01L24/73 , H01L33/44 , H01L2224/16 , H01L2224/48091 , H01L2224/48463 , H01L2924/00011 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/12036 , H01L2924/12041 , H01S5/02272 , H01L2924/00 , H01L2224/0401
摘要： A light emitting chip is disposed on a support surface. A plurality of bonding bumps are disposed in a gap between the light emitting chip and the support surface. The plurality of bonding bumps provide at least one electrical power input path to the light emitting chip. An underfill comprising underfill material is disposed in the gap between the light emitting chip and the support surface such that the underfill substantially fills the gap but does not form a fillet extending outside the gap over sidewalls of the light emitting chip. The underfill is configured to provide at least one of (i) mechanical support for the light emitting chip and (ii) a thermal conduction path from the light emitting chip to the support surface.
摘要翻译： 发光芯片设置在支撑表面上。 多个接合凸块设置在发光芯片和支撑表面之间的间隙中。 多个接合凸块提供至少一个电功率输入路径到发光芯片。 包含底部填充材料的底部填充剂设置在发光芯片和支撑表面之间的间隙中，使得底部填充剂基本上填充间隙，但是不形成在发光芯片的侧壁上延伸到间隙外侧的圆角。 底部填充物被配置为提供（i）发光芯片的机械支撑和（ii）从发光芯片到支撑表面的热传导路径中的至少一个。
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公开(公告)号：US20080061312A1
公开(公告)日：2008-03-13
申请号：US11519402
申请日：2006-09-12
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L24/73 , H01L33/44 , H01L2224/16 , H01L2224/48091 , H01L2224/48463 , H01L2924/00011 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/12036 , H01L2924/12041 , H01S5/02272 , H01L2924/00 , H01L2224/0401
摘要： A light emitting chip is disposed on a support surface. A plurality of bonding bumps are disposed in a gap between the light emitting chip and the support surface. The plurality of bonding bumps provide at least one electrical power input path to the light emitting chip. An underfill comprising underfill material is disposed in the gap between the light emitting chip and the support surface such that the underfill substantially fills the gap but does not form a fillet extending outside the gap over sidewalls of the light emitting chip. The underfill is configured to provide at least one of (i) mechanical support for the light emitting chip and (ii) a thermal conduction path from the light emitting chip to the support surface.
摘要翻译： 发光芯片设置在支撑表面上。 多个接合凸块设置在发光芯片和支撑表面之间的间隙中。 多个接合凸块提供至少一个电功率输入路径到发光芯片。 包含底部填充材料的底部填充物设置在发光芯片和支撑表面之间的间隙中，使得底部填充物基本上填充间隙，但是不形成在发光芯片的侧壁上方的间隙外延伸的圆角。 底部填充物被配置为提供（i）发光芯片的机械支撑和（ii）从发光芯片到支撑表面的热传导路径中的至少一个。
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7.发明申请Wafer level package for very small footprint and low profile white LED devices 有权晶圆级封装，占地面积小，白色LED器件低公开(公告)号：US20070202623A1
公开(公告)日：2007-08-30
申请号：US11588551
申请日：2006-10-27
申请人： Xiang Gao , Michael Sackrison
发明人： Xiang Gao , Michael Sackrison
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L25/0753 , H01L33/505 , H01L2924/0002 , H01L2933/0041 , H01L2924/00
摘要： A surface mount LED package having a tight footprint and small vertical image size is fabricated by a method comprising: forming light emitting diode chips each having a substrate and a plurality of layers configured to emit electroluminescence responsive to electrical energizing; forming electrical vias in a sub mount, the electrical vias passing from a front side of the sub-mount to a back-side of the sub-mount; flip chip bonding the light emitting diode chips on the front-side of the sub mount such that each light emitting diode chip electrically contacts selected electrical vias; thinning or removing the substrates of the flip-chip bonded light emitting diode chips; and after the thinning, disposing a phosphor over the flip chip bonded light emitting diode chips.
摘要翻译： 通过以下方法制造具有紧密占地面积和小垂直图像尺寸的表面贴装LED封装，其包括：形成各自具有基板的发光二极管芯片和被配置为响应于电激励发射电致发光的多个层; 在副安装座中形成电气通孔，所述电气通孔从所述副安装座的前侧穿过所述副安装座的后侧; 将发光二极管芯片的倒装芯片接合在子安装座的前侧，使得每个发光二极管芯片电接触所选择的电气通孔; 减薄或去除倒装芯片接合的发光二极管芯片的基板; 并且在变薄之后，在倒装芯片粘结的发光二极管芯片上设置荧光体。
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公开(公告)号：US07087463B2
公开(公告)日：2006-08-08
申请号：US10911052
申请日：2004-08-04
CPC分类号： H01L33/0095 , H01L21/78 , H01L2924/0002 , H01L2924/00
摘要： In a light emitting package fabrication process, a plurality of light emitting chips (10) are attached on a sub-mount wafer (14). The attached light emitting chips (10) are encapsulated. Fracture-initiating trenches (30, 32) are laser cut into the sub-mount wafer (14) between the attached light emitting chips (10) using a laser. The sub-mount wafer (14) is fractured along the fracture initiating trenches (30, 32).
摘要翻译： 在发光封装制造工艺中，多个发光芯片（10）安装在子安装晶片（14）上。 附着的发光芯片（10）被封装。 使用激光将断裂引发沟槽（30,32）激光切割到附接的发光芯片（10）之间的子安装晶片（14）中。 子安装晶片（14）沿断裂引发沟槽（30,32）断裂。
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9.发明授权Wafer level package for very small footprint and low profile white LED devices 有权晶圆级封装，占地面积小，白色LED器件低公开(公告)号：US07718449B2
公开(公告)日：2010-05-18
申请号：US11588551
申请日：2006-10-27
申请人： Xiang Gao , Michael Sackrison
发明人： Xiang Gao , Michael Sackrison
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L25/0753 , H01L33/505 , H01L2924/0002 , H01L2933/0041 , H01L2924/00
摘要： A surface mount LED package having a tight footprint and small vertical image size is fabricated by a method comprising: forming light emitting diode chips each having a substrate and a plurality of layers configured to emit electroluminescence responsive to electrical energizing; forming electrical vias in a sub mount, the electrical vias passing from a front side of the sub-mount to a back-side of the sub-mount; flip chip bonding the light emitting diode chips on the front-side of the sub mount such that each light emitting diode chip electrically contacts selected electrical vias; thinning or removing the substrates of the flip-chip bonded light emitting diode chips; and after the thinning, disposing a phosphor over the flip chip bonded light emitting diode chips.
摘要翻译： 通过以下方法制造具有紧密占地面积和小垂直图像尺寸的表面贴装LED封装，其包括：形成各自具有基板的发光二极管芯片和被配置为响应于电激励发射电致发光的多个层; 在副安装座中形成电气通孔，所述电气通孔从所述副安装座的前侧穿过所述副安装座的后侧; 将发光二极管芯片的倒装芯片接合在子安装座的前侧，使得每个发光二极管芯片电接触所选择的电气通孔; 减薄或去除倒装芯片接合的发光二极管芯片的基板; 并且在变薄之后，在倒装芯片粘结的发光二极管芯片上设置荧光体。
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公开(公告)号：US20070004088A1
公开(公告)日：2007-01-04
申请号：US11482363
申请日：2006-07-07
申请人： Michael Sackrison , Xiang Gao , Bryan Shelton , Ivan Eliashevich
发明人： Michael Sackrison , Xiang Gao , Bryan Shelton , Ivan Eliashevich
IPC分类号： H01L21/00
CPC分类号： H01L33/0095 , H01L21/78 , H01L2924/0002 , H01L2924/00
摘要： In a light emitting package fabrication process, a plurality of light emitting chips (10) are attached on a sub-mount wafer (14). The attached light emitting chips (10) are encapsulated. Fracture-initiating trenches (30, 32) are laser cut into the sub-mount wafer (14) between the attached light emitting chips (10) using a laser. The sub-mount wafer (14) is fractured along the fracture initiating trenches (30, 32).
摘要翻译： 在发光封装制造工艺中，多个发光芯片（10）安装在子安装晶片（14）上。 附着的发光芯片（10）被封装。 使用激光将断裂引发沟槽（30,32）激光切割到附接的发光芯片（10）之间的子安装晶片（14）中。 子安装晶片（14）沿断裂引发沟槽（30,32）断裂。
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