摘要:
In a process for producing an alkyl group-substituted aromatic hydrocarbon according to the present invention, (i) an aromatic hydrocarbon is reacted with (ii) an alkylating agent selected from the group consisting of olefins, lower aliphatic alcohols and alkyl halides in the presence of a mordenite-type zeolite catalyst treated with a fluorine-containing compound, and therefore the conversion of the aromatic compound can be increased and further it is possible to introduce the specific number of alkyl groups into the specific position of the aromatic compound.In particular, when biphenyl is used as the aromatic hydrocarbon and propylene is used as the alkylating agent, p,p'-diisopropylbiphenyl can be obtained in a high yield and high selectivity.
摘要:
In a process of producing isopropylnaphthols by oxidizing diisopropylnaphthalenes with molecular oxygen in a liquid phase to provide a reaction mixture which contains therein diisopropylnaphthalene monohydroperoxides and then acid decomposing the monohydroperoxides to isopropylnaphthols, the improvement comprising separating an organic layer from the reaction mixture, adding lower aliphatic alcohols of 1-4 carbons to the organic layer, crystallizing the diisopropylnaphthalenes while allowing the diisopropylnaphthalene monohydroperoxides to remain dissolved in the lower aliphatic alcohols, thereby to separate the monohydroperoxides from the diisopropylnaphthalenes.A further improvement in the process comprises crystallizing the isopropylnaphthols from aromatic hydrocarbons of 6-12 carbons.
摘要:
A process is disclosed which is capable of producing p,p'-biphenol of high purity by the dealkylation reaction of 3,3',5,5'-tetra-t-butyl-4,4'-dihydroxybiphenyl and which yet allows isobutene to be recovered in high yield. The process performs the dealkylation reaction of 3,3',5,5'-tetra-t-butyl-4,4'-dihydroxybiphenyl in the presence of an acid catalyst using as a solvent a saturated hydrocarbon having a boiling point of 190.degree. C. or above, an alicyclic hydrocarbon having a boiling point of 190.degree. C. or above, a hydrocarbon with an iodine value of no more than 1, sulfolane, or a mixture of these solvents. Also disclosed is a process for producing p,p'-biphenol from a mixture of 2,6-di-t-butyl-phenol and 3,3',5,5'-tetra-t-butyl-4,4'-diphenoquinone or from a mixture of 2,6-di-t-butylphenol, 3,3',5,5'-tetra-t-butyl-4,4'-diphenoquinone and 3,3',5,5'-tetra-t-butyl-4,4'-dihydroxybiphenyl. In this process, the synthesis of 3,3',5,5'-tetra-t-butyl-4,4'-dihydroxybiphenyl by the redox reaction between 2,6-di-t-butylphenol and 3,3',5,5'-tetra-t-butyl-4,4'-diphenoquinone and the production of p,p'-biphenol by the dealkylation reaction of 3,3',5,5'-tetra-t-butyl-4,4'-dihydroxybiphenyl are performed at one stage in the presence of both an acid catalyst and a solvent at a temperature of 120.degree.-280.degree. C.
摘要:
Processes for preparing biphenols by oxidation coupling of phenols, to which the present invention is directed, are characterized in that said oxidation coupling reaction is carried out under such conditions that the same diphenoquinones as those produced as by-products at the time when said oxidation coupling is effected are added to the reaction system. According to a preferred embodiment of the invention, moreover, the yield of biphenols can be enhanced by the reuse in the abovementioned reaction of diphenoquinones recovered from the reaction mixture containing the same.
摘要:
A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.
摘要:
A pattern forming system 1 includes a checking apparatus 400, a storage device 502, and a control section 500. The checking apparatus 400 is configured to measure and check a state of a resist pattern formed on a substrate W after a developing process and output a first check result thus obtained, and to measure and check a state of a pattern formed on the substrate after an etching process and output a second check result thus obtained. The storage device 502 stores a correlation formula obtained from the first check result and the second check result. The control section 500 is configured to use the correlation formula to obtain a target value of the state of the pattern after the developing process from a target value of the state of the pattern after the etching process, and to use a difference between the target value of the state of the pattern after the developing process and the first check result to set a condition for the first heat process and/or the second heat process.
摘要:
A resist pattern forming apparatus comprising a controller having a controlling portion that controls a processing of a coating and developing apparatus with a coating unit and a developing unit being provided therewith and an aligner being connected thereto, while an inspecting portion and the like measures at least one of a plurality of measurement items selected from, a reflection ratio and a film thickness of a base film and a resist film, a line width after the development, an accuracy that the base film matches with a resist pattern, a defect after the development, and so on. The measured data is transmitted to the controller. At the controller, a parameter subject to an amendment is selected based on the corresponding data of each of the measurement item such as the film thickness of the resist and the line width after the development, and the amendment of the parameters subject to the amendment is performed. As a result, the amending operation is facilitated by a reduced workload of an operator and in the same time, the appropriate amendment can be performed.
摘要:
In optical line width measurement performed using the scatterometry technique, the present invention measures the line width formed on a substrate more accurately than in the prior art. After a predetermined pattern is formed in a resist film on a substrate, the refractive index and the extinction coefficient of the resist film are measured. Based on the measured values, calculation is performed to obtain calculated light intensity distributions of reflected light reflected from a plurality of virtual patterns. The calculated light intensity distributions are stored, and their library is created. The substrate for which the refractive index and so on are measured is irradiated with light, and the light intensity distribution of its reflected light is measured. The light intensity distribution is collated with the calculated light intensity distributions in the library, so that the line width of the virtual pattern having a matching light intensity distribution is regarded as the line width of the real pattern. Since the library of the light intensity distributions of the virtual pattern is created based on the actually measured refractive index and so on after the formation of the pattern, an accurate line width matching the pattern state at the time of measuring the line width is measured.
摘要:
In the present invention, in the photolithography process in which a certain focus condition has been already set, a film on a substrate is exposed to only zero-order light of a light source transmitted, and then developed to reduce a first portion of the film on the substrate. Further, the film on the substrate is exposed to zero-order light and higher order light of the light source transmitted, and then developed to reduce a second portion of the film on the substrate. Thereafter, the film thicknesses of the first portion and the second portion are measured, and the measured film thicknesses of the first portion and the second portion are converted into line widths of a resist pattern by previously obtained correlations between the film thicknesses and the line widths. The converted line width of the second portion is then subtracted from the converted line width of the first portion, whereby the line width depending only on the focus component is calculated. Based on the line width, a new focus condition is set.
摘要:
A resist pattern forming apparatus comprising a controller having a controlling portion that controls a processing of a coating and developing apparatus with a coating unit and a developing unit being provided therewith and an aligner being connected thereto, while an inspecting portion and the like measures at least one of a plurality of measurement items selected from, a reflection ratio and a film thickness of a base film and a resist film, a line width after the development, an accuracy that the base film matches with a resist pattern, a defect after the development, and so on. The measured data is transmitted to the controller. At the controller, a parameter subject to an amendment is selected based on the corresponding data of each of the measurement item such as the film thickness of the resist and the line width after the development, and the amendment of the parameters subject to the amendment is performed. As a result, the amending operation is facilitated by a reduced workload of an operator and in the same time, the appropriate amendment can be performed.