公开(公告)号：US5767578A

公开(公告)日：1998-06-16

申请号：US634957

申请日：1996-04-19

申请人： Mike F. Chang ,  King Owyang ,  Fwu-Iuan Hshieh ,  Yueh-Se Ho ,  Jowei Dun ,  Hans-Jurgen Fusser ,  Reinhard Zachai

发明人： Mike F. Chang ,  King Owyang ,  Fwu-Iuan Hshieh ,  Yueh-Se Ho ,  Jowei Dun ,  Hans-Jurgen Fusser ,  Reinhard Zachai

IPC分类号： H01L23/29 ,  H01L23/367 ,  H01L23/373 ,  H01L23/34

CPC分类号： H01L23/3672 ,  H01L23/29 ,  H01L23/3732 ,  H01L2224/16 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/14

摘要： An integrated circuit chip has full trench dielectric isolation of each portion of the chip. Initially the chip substrate is of conventional thickness and has semiconductor devices formed in it. After etching trenches in the substrate and filling them with dielectric material, a heat sink cap is attached to the passivation layer on the substrate front side surface. The passivation layer is a CVD diamond film which provides both electrical insulation and thermal conductivity. The substrate backside surface is removed (by grinding and/or CMP) to expose the bottom portion of the trenches. This fully isolates each portion of the die and eliminates mechanical stresses at the trench bottoms. Thereafter drain or collector electrical contacts are provided on the substrate backside surface. In a flip chip version, frontside electrical contacts extend through the frontside passivation layer to the heat sink cap. In a surface mount version, vias are etched through the substrate, with surface mount posts formed on the vias, to contact the frontside electrical contacts and provide all electrical contacts on the substrate backside surface. The wafer is then scribed into die in both versions without need for further packaging.

摘要翻译： 集成电路芯片具有芯片每个部分的全沟槽绝缘隔离。 最初，芯片基板具有常规的厚度并且在其中形成半导体器件。 在蚀刻衬底中的沟槽并用电介质材料填充沟槽之后，将散热器盖附着到衬底前侧表面上的钝化层。 钝化层是提供电绝缘和导热性的CVD金刚石膜。 去除衬底背面（通过研磨和/或CMP）以暴露沟槽的底部。 这完全隔离了模具的每个部分，并消除了沟槽底部的机械应力。 此后，漏极或集电极电触点设置在基板背面上。 在倒装芯片版本中，前端电触点延伸穿过前侧钝化层到散热器盖。 在表面安装型式中，通孔穿过衬底被蚀刻，表面安装柱形成在通孔上，以接触前侧电触点并提供衬底背面上的所有电触头。 然后将晶片以两种版本刻成模具，而不需要进一步的包装。

公开(公告)号：US5757081A

公开(公告)日：1998-05-26

申请号：US603512

申请日：1996-02-20

申请人： Mike F. Chang ,  King Owyang ,  Fwu-Iuan Hshieh ,  Yueh-Se Ho ,  Jowei Dun

发明人： Mike F. Chang ,  King Owyang ,  Fwu-Iuan Hshieh ,  Yueh-Se Ho ,  Jowei Dun

IPC分类号： H01L23/367 ,  H01L23/373 ,  H01L23/48

CPC分类号： H01L23/3672 ,  H01L23/3738 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/14 ,  Y10S148/135 ,  Y10S438/928 ,  Y10S438/977

摘要： An integrated circuit chip has full trench dielectric isolation of each portion of the chip. Initially the chip substrate is of conventional thickness and has semiconductor devices formed in it. After etching trenches in the substrate and filling them with dielectric material, a heat sink cap is attached to the passivation layer on the substrate front side surface. The substrate backside surface is removed (by grinding or CMP) to expose the bottom portion of the trenches. This fully isolates each portion of the die and eliminates mechanical stresses at the trench bottoms. Thereafter drain or collector electrical contacts are provided on the substrate backside surface. In a flip chip version, frontside electrical contacts extend through the frontside passivation layer to the heat sink cap. In a surface mount version, vias are etched through the substrate, with surface mount posts formed on the vias, to contact the frontside electrical contacts and provide all electrical contacts on the substrate backside surface. The wafer is then scribed into die in both versions without need for further packaging.

摘要翻译： 集成电路芯片具有芯片每个部分的全沟槽绝缘隔离。 最初，芯片基板具有常规的厚度并且在其中形成半导体器件。 在蚀刻衬底中的沟槽并用电介质材料填充沟槽之后，将散热器盖附着到衬底前侧表面上的钝化层。 通过研磨或CMP去除衬底背面以露出沟槽的底部。 这完全隔离了模具的每个部分，并消除了沟槽底部的机械应力。 此后，漏极或集电极电触点设置在基板背面上。 在倒装芯片版本中，前端电触点延伸穿过前侧钝化层到散热器盖。 在表面安装型式中，通孔穿过衬底被蚀刻，表面安装柱形成在通孔上，以接触前侧电触点并提供衬底背面上的所有电触头。 然后将晶片刻成两个版本的模具，无需进一步包装。

公开(公告)号：US5753529A

公开(公告)日：1998-05-19

申请号：US444660

申请日：1995-05-19

申请人： Mike F. Chang ,  King Owyang ,  Fwu-Iuan Hshieh ,  Yueh-Se Ho ,  Jowei Dun

发明人： Mike F. Chang ,  King Owyang ,  Fwu-Iuan Hshieh ,  Yueh-Se Ho ,  Jowei Dun

IPC分类号： H01L23/367 ,  H01L23/373 ,  H01L21/302

CPC分类号： H01L23/3672 ,  H01L23/3738 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/14 ,  Y10S148/135 ,  Y10S438/928 ,  Y10S438/977

摘要： An integrated circuit chip has full trench dielectric isolation of each portion of the chip. Initially the chip substrate is of conventional thickness and has semiconductor devices formed in it. After etching trenches in the substrate and filling them with dielectric material, a heat sink cap is attached to the passivation layer on the substrate front side surface. The substrate backside surface is removed (by grinding or CMP) to expose the bottom portion of the trenches. This fully isolates each portion of the die and eliminates mechanical stresses at the trench bottoms. Thereafter drain or collector electrical contacts are provided on the substrate backside surface. In a flip chip version, frontside electrical contacts extend through the frontside passivation layer to the heat sink cap. In a surface mount version, vias are etched through the substrate, with surface mount posts formed on the vias, to contact the frontside electrical contacts and provide all electrical contacts on the substrate backside surface. The wafer is then scribed into die in both versions without need for further packaging.

公开(公告)号：US5468982A

公开(公告)日：1995-11-21

申请号：US253527

申请日：1994-06-03

申请人： Fwu-Iuan Hshieh ,  Sze-Hon Kwan ,  Mike F. Chang ,  Yueh-Se Ho ,  Jan Van Der Linde ,  King Owyang

发明人： Fwu-Iuan Hshieh ,  Sze-Hon Kwan ,  Mike F. Chang ,  Yueh-Se Ho ,  Jan Van Der Linde ,  King Owyang

IPC分类号： H01L21/76 ,  H01L21/336 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78 ,  H01L29/68 ,  H01L21/265

CPC分类号： H01L29/407 ,  H01L29/0696 ,  H01L29/402 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/1095 ,  H01L29/4236

摘要： A trenched DMOS transistor has improved device performance and production yield. During fabrication the cell trench corners, i.e. the areas where two trenches intersect, are covered on the principal surface of the integrated circuit substrate with a blocking photoresist layer during the source region implant step in order to prevent (block) a channel from forming in these corner areas. Punch-through is thereby eliminated and reliability improved, while source/drain on-resistance is only slightly increased. The blocking of the trench corners creates a cutout structure at each trench corner, whereby the source region does not extend to the trench corner, but instead the underlying oppositely-doped body region extends to the trench corner.

摘要翻译： 沟槽的DMOS晶体管具有改进的器件性能和生产产量。 在制造期间，在源区域注入步骤期间，单元沟槽角部，即两个沟槽相交的区域被覆盖在集成电路基板的主表面上，并具有阻挡光致抗蚀剂层，以便防止（阻挡）在这些区域中形成沟道 角落地区。 因此消除了穿通，并提高了可靠性，同时源极/漏极导通电阻仅略微增加。 沟槽拐角的阻塞在每个沟槽角处产生切口结构，由此源极区域不延伸到沟槽角部，而是相反地，下面相对掺杂的体区域延伸到沟槽角部。

公开(公告)号：US5639676A

公开(公告)日：1997-06-17

申请号：US603047

申请日：1996-02-16

申请人： Fwu-Iuan Hshieh ,  Mike F. Chang ,  Yueh-Se Ho ,  King Owyang

发明人： Fwu-Iuan Hshieh ,  Mike F. Chang ,  Yueh-Se Ho ,  King Owyang

IPC分类号： H01L21/316 ,  H01L21/336 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78 ,  H01L21/265 ,  H01L21/44 ,  H01L21/48

CPC分类号： H01L29/407 ,  H01L29/404 ,  H01L29/7813

摘要： A trenched DMOS transistor is fabricated using seven masking steps. One masking step defines both the P+ deep body regions and the active portions of the transistor which are masked using a LOCOS process. A second masking step defines the insulating oxide in the termination region. The insulating (oxide) layer in the termination region is thus thicker than in the active region of the transistor, thereby improving process control and reducing substrate contamination during processing. Additionally, the thicker field oxide in the termination region improves electric field distribution so that avalanche breakdown occurs in the cell (active) region rather than in the termination region, and thus breakdown voltage behavior is more stable and predictable.

摘要翻译： 使用七个掩模步骤制造出沟槽的DMOS晶体管。 一个掩模步骤限定使用LOCOS工艺掩蔽的P +深体区域和晶体管的有源部分。 第二掩蔽步骤限定了端接区域中的绝缘氧化物。 因此，端接区域中的绝缘（氧化物）层比晶体管的有源区域厚，从而改善了处理过程中的工艺控制和减少了衬底污染。 此外，端接区域中较厚的场氧化物改善了电场分布，使得雪崩击穿发生在电池（有源）区而不是终端区，因此击穿电压行为更稳定和可预测。

公开(公告)号：US5578851A

公开(公告)日：1996-11-26

申请号：US625639

申请日：1996-03-29

申请人： Fwu-Iuan Hshieh ,  Mike F. Chang ,  Yueh-Se Ho ,  King Owyang

发明人： Fwu-Iuan Hshieh ,  Mike F. Chang ,  Yueh-Se Ho ,  King Owyang

IPC分类号： H01L21/316 ,  H01L21/336 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78 ,  H01L29/76 ,  H01L29/94

CPC分类号： H01L29/407 ,  H01L29/404 ,  H01L29/7813

摘要： A trenched DMOS transistor is fabricated using seven masking steps. One masking step defines both the P+ deep body regions and the active portions of the transistor which are masked using a LOCOS process. A second masking step defines the insulating oxide in the termination region. The insulating (oxide) layer in the termination region is thus thicker than in the active region of the transistor, thereby improving process control and reducing substrate contamination during processing. Additionally, the thicker field oxide in the termination region improves electric field distribution so that avalanche breakdown occurs in the cell (active) region rather than in the termination region, and thus breakdown voltage behavior is more stable and predictable.

摘要翻译： 使用七个掩模步骤制造出沟槽的DMOS晶体管。 一个掩模步骤限定使用LOCOS工艺掩蔽的P +深体区域和晶体管的有源部分。 第二掩蔽步骤限定了端接区域中的绝缘氧化物。 因此，端接区域中的绝缘（氧化物）层比晶体管的有源区域厚，从而改善了处理过程中的工艺控制和减少了衬底污染。 此外，端接区域中较厚的场氧化物改善了电场分布，使得雪崩击穿发生在电池（有源）区而不是终端区，因此击穿电压行为更稳定和可预测。

公开(公告)号：US5316959A

公开(公告)日：1994-05-31

申请号：US928909

申请日：1992-08-12

申请人： Sze-Hon Kwan ,  Fwu-Iuan Hshieh ,  Mike F. Chang ,  Yueh-Se Ho ,  King Owyang

发明人： Sze-Hon Kwan ,  Fwu-Iuan Hshieh ,  Mike F. Chang ,  Yueh-Se Ho ,  King Owyang

IPC分类号： H01L21/265 ,  H01L21/316 ,  H01L21/318 ,  H01L21/336 ,  H01L21/76 ,  H01L29/06 ,  H01L29/78

CPC分类号： H01L29/0619 ,  H01L29/7813

摘要： A trenched DMOS transistor is fabricated using six masking steps. One masking step defines both the P+ regions and the active portions of the transistor which are masked using a LOCOS process. The LOCOS process also eliminates the poly stringer problem present in prior art structures by reducing the oxide step height. A transistor termination structure includes several field rings, each set of adjacent field rings separated by an insulated trench, thus allowing the field rings to be spaced very close together. The field rings and trenches are fabricated in the same steps as are corresponding portions of the active transistor.

摘要翻译： 使用六个掩模步骤制造沟槽DMOS晶体管。 一个掩模步骤限定使用LOCOS工艺掩蔽的P +区域和晶体管的有源部分。 LOCOS工艺还通过降低氧化物台阶高度来消除现有技术结构中存在的多边形问题。 晶体管端接结构包括几个场环，每组相邻的场环由绝缘沟槽隔开，从而允许场环非常靠近在一起。 场环和沟槽以与有源晶体管的对应部分相同的步骤制造。

公开(公告)号：US5910669A

公开(公告)日：1999-06-08

申请号：US918954

申请日：1992-07-24

申请人： Mike F. Chang ,  Fwu-Iuan Hshieh ,  Sze-Hon Kwan ,  King Owyang

发明人： Mike F. Chang ,  Fwu-Iuan Hshieh ,  Sze-Hon Kwan ,  King Owyang

IPC分类号： H01L21/336 ,  H01L29/08 ,  H01L29/423 ,  H01L29/78 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L29/7813 ,  H01L29/0878 ,  H01L29/4236

摘要： A DMOS field effect transistor having its gate electrode located in a trench includes a lightly doped epitaxial layer overlying the usual epitaxial layer. The trench penetrates only part way through the upper epitaxial layer which is more lightly doped than is the underlying lower epitaxial layer. The lightly doped upper epitaxial layer reduces the electric field at the bottom of the trench, thus protecting the gate oxide from breakdown during high voltage operation. Advantageously the upper portion of the lightly doped upper epitaxial layer has little adverse effect on the transistor's on resistance.

摘要翻译： 其栅电极位于沟槽中的DMOS场效应晶体管包括覆盖在通常外延层上的轻掺杂外延层。 沟槽仅穿过上层外延层的一部分，该外延层比下层的下层外延层更轻掺杂。 轻掺杂的上部外延层减小沟槽底部的电场，从而在高电压操作期间保护栅极氧化物不被击穿。 有利地，轻掺杂的上部外延层的上部对晶体管的导通电阻几乎没有不利影响。

公开(公告)号：US5532179A

公开(公告)日：1996-07-02

申请号：US447484

申请日：1995-05-23

申请人： Mike F. Chang ,  Fwu-Iuan Hshieh ,  Sze-Hon Kwan ,  King Owyang

发明人： Mike F. Chang ,  Fwu-Iuan Hshieh ,  Sze-Hon Kwan ,  King Owyang

IPC分类号： H01L21/336 ,  H01L29/08 ,  H01L29/423 ,  H01L29/78 ,  H01L21/335 ,  H01L21/20

CPC分类号： H01L29/7813 ,  H01L29/0878 ,  H01L29/4236

摘要： A DMOS field effect transistor having its gate electrode located in a trench includes a lightly doped epitaxial layer overlying the usual epitaxial layer. The trench penetrates only part way through the upper epitaxial layer which is more lightly doped than is the underlying lower epitaxial layer. The lightly doped upper epitaxial layer reduces the electric field at the bottom of the trench, thus protecting the gate oxide from breakdown during high voltage operation. Advantageously the upper portion of the lightly doped upper epitaxial layer has little adverse effect on the transistor's on resistance.

摘要翻译： 其栅电极位于沟槽中的DMOS场效应晶体管包括覆盖在通常外延层上的轻掺杂外延层。 沟槽仅穿过上层外延层的一部分，该外延层比下层的下层外延层更轻掺杂。 轻掺杂的上部外延层减小沟槽底部的电场，从而在高电压操作期间保护栅极氧化物不被击穿。 有利地，轻掺杂的上部外延层的上部对晶体管的导通电阻几乎没有不利影响。

公开(公告)号：US5404040A

公开(公告)日：1995-04-04

申请号：US96135

申请日：1993-07-22

申请人： Fwu-Iuan Hshieh ,  Mike Chang ,  Jun W. Chen ,  King Owyang ,  Dorman C. Pitzer ,  Jan V. D. Linde

发明人： Fwu-Iuan Hshieh ,  Mike Chang ,  Jun W. Chen ,  King Owyang ,  Dorman C. Pitzer ,  Jan V. D. Linde

IPC分类号： H01L21/28 ,  H01L21/316 ,  H01L21/322 ,  H01L21/336 ,  H01L29/06 ,  H01L29/10 ,  H01L29/40 ,  H01L29/78 ,  H01L29/68 ,  H01L21/265

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/28167 ,  H01L21/31662 ,  H01L21/3221 ,  H01L29/1095 ,  H01L29/66712 ,  H01L29/7811 ,  H01L21/28211 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/402 ,  H01L29/4238

摘要： A power MOSFET is created from a semiconductor body (2000 and 2001) having a main active area and a peripheral termination area. A first insulating layer (2002) of substantially uniform thickness lies over the active and termination areas. A main polycrystalline portion (2003A/2003B) lies over the first insulating layer largely above the active area. First and second peripheral polycrystalline segments (2003C1 and 2003C2) lie over the first insulating layer above the termination area.A gate electrode (2016) contacts the main polycrystalline portion. A source electrode (2015A/2015B) contacts the active area, the termination area, and the first polycrystalline segment. An optional additional metal portion (2019) contacts the second polycrystalline segment. The MOSFET is typically created by a five-mask process. A defreckle etch is performed subsequent to metal deposition and patterning to define the two peripheral polycrystalline segments.

摘要翻译： 功率MOSFET由具有主有源区和外围端接区的半导体主体（2000和2001）产生。 基本上均匀厚度的第一绝缘层（2002）位于活性和终止区域之上。 主要多晶部分（2003A / 2003B）位于主要在有效区域之上的第一绝缘层之上。 第一和第二外围多晶段（2003C1和2003C2）位于终止区域上方的第一绝缘层上。 栅电极（2016）与主多晶部分接触。 源电极（2015A / 2015B）接触有源区，端接区和第一多晶段。 可选的附加金属部分（2019）接触第二多晶段。 MOSFET通常由五掩模工艺制成。 在金属沉积和图案化之后执行失真蚀刻以限定两个外围多晶段。