公开(公告)号：US5744825A

公开(公告)日：1998-04-28

申请号：US594038

申请日：1996-01-30

申请人： Reinhard Zachai ,  Hans-Juergen Fuesser ,  Tim Gutheit

发明人： Reinhard Zachai ,  Hans-Juergen Fuesser ,  Tim Gutheit

IPC分类号： C30B25/18 ,  H01L21/20 ,  H01L29/16 ,  H01L29/267 ,  H01L31/0312 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072

CPC分类号： H01L29/16 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02447 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/1602 ,  Y10S438/938

摘要： The invention relates to a composite structure for electronic components comprising a growth substrate, an intermediate layer having substantially a crystallographic lattice structure arranged on the growth substrate, and a diamond layer applied on top of the intermediate layer, and to a process for producing a composite structure of this type. In order to obtain a diamond layer of highest quality, the intermediate layer has substantially a zinc blende or diamond or a calcium fluoride structure, in which at the outset of the intermediate layer the difference between the lattice constant of the intermediate layer and the lattice constant of the growth substrate, relative to the lattice constant of the growth substrate, is less than 20%, in particular less than 10%, and in which at the transition from the intermediate layer to the diamond layer for the lattice constant of the intermediate layer and the lattice constant of the diamond layer the value of the expression .vertline.(n*a.sub.ZS -m*a.sub.D).vertline./n*a.sub.ZS is less than 0.2, in particular less than 0.1, wherein n and m are natural numbers, a.sub.D is the lattice constant of the diamond layer, and a.sub.ZS is the lattice constant of the intermediate layer at the transition to the diamond layer.

摘要翻译： 本发明涉及一种用于电子部件的复合结构体，其包括生长衬底，具有布置在生长衬底上的基本上晶格结构的中间层和施加在中间层顶部上的金刚石层，以及用于制备复合材料的方法 这种结构。 为获得最高质量的金刚石层，中间层基本上具有闪锌矿或金刚石或氟化钙结构，其中在中间层的一开始，中间层的晶格常数与晶格常数之间的差异 的生长衬底相对于生长衬底的晶格常数小于20％，特别是小于10％，并且其中在从中间层到金刚石层的中间层的晶格常数的转变 并且金刚石层的晶格常数表达式|（n * aZS-m * aD）| / n * aZS的值小于0.2，特别是小于0.1，其中n和m是自然数，a是晶格 金刚石层的常数，aZS是过渡到金刚石层的中间层的晶格常数。

公开(公告)号：US5737186A

公开(公告)日：1998-04-07

申请号：US639102

申请日：1996-04-22

申请人： Hans-Juergen Fuesser ,  Reinhard Zachai ,  Wolfram Muench ,  Tim Gutheit

发明人： Hans-Juergen Fuesser ,  Reinhard Zachai ,  Wolfram Muench ,  Tim Gutheit

IPC分类号： F28F3/12 ,  H01C1/082 ,  H01L23/473 ,  H05K7/20

CPC分类号： H01C1/082 ,  F28F3/12 ,  H01L23/473 ,  H01L2924/0002

摘要： An arrangement of a plurality of microcooling devices provided with electrical components, each microcooling device having a closed channel structure for a coolant to flow through, and being provided with electrical conductors for the electronic components and with externally carried fluid ducts for a coolant which flows through the channel structures. A covering layer which forms one of at least two flat sides of the microcooling device is made from an electrically insulating material with good heat conductivity. The electronic components are arrayed on this cover layer and on the opposite flat side of each microcooling device. Adjacent microcooling devices which are provided with electronic components on confronting flat sides are arranged with their components spaced apart or staggered with respect to one another, and the components of one microcooling device preferably are in contact with the cover layer of the adjacent microcooling device.

摘要翻译： 设置有多个具有电气部件的微冷却装置的布置，每个微冷装置具有用于冷却剂流过的封闭通道结构，并且设置有用于电子部件的电导体和用于流过冷却剂的外部承载流体管道 渠道结构。 形成微冷装置的至少两个平坦侧面之一的覆盖层由具有良好导热性的电绝缘材料制成。 电子部件排列在该覆盖层上并且排列在每个显微冷却装置的相对的平坦侧上。 在相对的平坦侧面上设置有电子部件的相邻的微冷装置被布置成其部件相对于彼此分开或交错，并且一个微冷装置的部件优选地与相邻的微冷装置的覆盖层接触。

公开(公告)号：US06284332B1

公开(公告)日：2001-09-04

申请号：US09148543

申请日：1998-09-04

申请人： Ulrich Buettner ,  Marin Hartweg ,  Herbert Klein ,  Martin Matt ,  Wolfram Muench ,  Karl-Heinz Thiemann ,  Reinhard Zachai

发明人： Ulrich Buettner ,  Marin Hartweg ,  Herbert Klein ,  Martin Matt ,  Wolfram Muench ,  Karl-Heinz Thiemann ,  Reinhard Zachai

IPC分类号： F16L910

CPC分类号： F01N13/14 ,  F01N13/102 ,  F01N2510/02 ,  F01N2530/26 ,  Y10T428/131 ,  Y10T428/1317 ,  Y10T428/1393

摘要： An exhaust line for an exhaust system of an internal combustion engine having a catalytic converter, the exhaust line being located upstream of the catalytic converter with respect to the flow direction of exhaust. The exhaust line has an externally applied heat-conducting layer preferably made of a metallic material and an internally disposed insulating layer made of a heat-insulating material. The insulating layer and the heat-conducting layer are connected directly and forcewise with one another. The layer thickness of the insulating layer is less than 2 mm, the specific heat capacity c of the insulating layer is less than 106 J/(m3h), and the heat diffusivity &kgr; of the insulating layer is less than 0.01 cm2/s.

摘要翻译： 一种用于具有催化转化器的内燃机的排气系统的排气管路，该排气管线相对于排气流动方向位于催化转化器的上游。 排气管线具有优选由金属材料制成的外部施加的导热层和由绝热材料制成的内部设置的绝缘层。 绝缘层和导热层彼此直接连接并且强制连接。 绝缘层的层厚度小于2mm，绝缘层的比热容c小于106J /（m3h），绝缘层的热扩散系数kappa小于0.01cm2 / s。

公开(公告)号：US6037240A

公开(公告)日：2000-03-14

申请号：US12554

申请日：1998-01-23

申请人： Andre Floeter ,  Herbert Guettler ,  Guntmar Schulz ,  Reinhard Zachai ,  Peter Bodo Gluche ,  Erhard Kohn ,  Paul Ziemann

发明人： Andre Floeter ,  Herbert Guettler ,  Guntmar Schulz ,  Reinhard Zachai ,  Peter Bodo Gluche ,  Erhard Kohn ,  Paul Ziemann

IPC分类号： C23C16/02 ,  C23C16/27 ,  C30B25/10 ,  C30B25/18 ,  H01L21/20

CPC分类号： C23C16/279 ,  C23C16/02 ,  C23C16/0245 ,  C23C16/274 ,  C23C16/277 ,  C30B25/105 ,  C30B25/18

摘要： A growth substrate having growth nuclei made of diamond and/or diamond-like carbon arranged on its growth surface, the orientation of over 50% of the growth nuclei deviating by less than 10.degree. from the crystal orientation defined by the growth substrate corresponding to Miller's indices (h, k, l) and the nucleus density changes between the center of the growth substrate and a distance of maximally 15 mm from the center by maximally 80%. The method also relates to a process for the growth substrate's manufacture.

摘要翻译： 具有生长核的生长衬底，其生长核心由其生长表面上的金刚石和/或类金刚石碳制成，超过50％的生长核的取向与由生长衬底限定的晶体取向相对应，与Miller's 指数（h，k，l）和细胞核密度在生长基质的中心和距离中心最大15mm的距离之间变化最大为80％。 该方法还涉及生长衬底的制造方法。

公开(公告)号：US5843224A

公开(公告)日：1998-12-01

申请号：US512080

申请日：1995-08-07

申请人： Reinhard Zachai ,  Tim Gutheit ,  Kenneth Goodson

发明人： Reinhard Zachai ,  Tim Gutheit ,  Kenneth Goodson

IPC分类号： C30B29/04 ,  C30B29/06 ,  H01L21/02 ,  H01L21/20

CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/02444 ,  H01L21/02447 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/02639

摘要： The invention relates to a composite structure including a semiconductor layer arranged on a diamond layer and/or a diamond-like layer, for subsequent processing to produce electronic components and/or groups of components and to a process for producing such a composite structure. In order to improve the quality of the subsequent components, the diamond layer is deposited underneath the component source zones from which the components are subsequently produced, and the diamond or diamond-like layer is provided at the margins of the component source zones and/or outside of the component source zones with edges where the thickness of the layer changes abruptly such that the edges have an edge height amounting to at least 1O%, preferably at least 50%, of the layer thickness of the diamond layer. Imperfections such as dislocations or other discontinuities in the semiconductor layer tend to collect at these edges outside of the component source zones, thereby decreasing the density of discontinuities in the component source zones and improving the quality of electronic components produced of material from the component source zones.

摘要翻译： 本发明涉及一种复合结构，其包括布置在金刚石层和/或类金刚石层上的半导体层，用于随后的生产电子部件和/或组件组的处理以及用于生产这种复合结构的方法。 为了提高随后的组分的质量，将金刚石层沉积在组分源区域的下方，随后从其中产生组分，并且在组分源区域的边缘处提供金刚石或类金刚石层，和/或 在具有边缘厚度的边缘的组分源区域外部突然变化，使得边缘具有相当于金刚石层的层厚度的至少10％，优选至少50％的边缘高度。 在半导体层中的位错或其他不连续性的缺陷倾向于在这些边缘处收集在部件源区域外部，从而降低部件源区域中的不连续密度，并且提高从部件源区域产生的材料的电子部件的质量 。

公开(公告)号：US6101715A

公开(公告)日：2000-08-15

申请号：US16312

申请日：1998-01-30

申请人： Hans-Juergen Fuesser ,  Reinhard Zachai ,  Wolfram Muench ,  Tim Gutheit

发明人： Hans-Juergen Fuesser ,  Reinhard Zachai ,  Wolfram Muench ,  Tim Gutheit

IPC分类号： H05K7/20 ,  H01C1/082 ,  H01L23/473 ,  B23P15/26

CPC分类号： H01C1/082 ,  H01L23/473 ,  F28F13/18 ,  F28F3/12 ,  H01L2924/0002 ,  Y10T29/4935

摘要： A microcooling device and a method for its manufacture. The microcooling device has a high heat conductivity, is designed to accommodate electronic components on its exterior surface, and has a channel structure in its interior through which a coolant fluid can flow to carry heat away from the components. The channel structure is formed by a base substrate provided with a plurality of recesses and a cover layer externally covering the recesses, the cover layer being made from an electrically insulating and heat-conducting material, and being such that the electronic components can be mounted directly thereon.

摘要翻译： 一种微冷装置及其制造方法。 该微型冷却装置具有高导热性，被设计成在其外表面上容纳电子部件，并且在其内部具有通道结构，冷却剂流体可以通过该结构将流体从部件运送。 通道结构由设置有多个凹部的基底基板和从外部覆盖凹部的覆盖层形成，覆盖层由电绝缘导热材料制成，并且使得电子部件可以直接安装 上。

公开(公告)号：US5855954A

公开(公告)日：1999-01-05

申请号：US752263

申请日：1996-11-18

申请人： Tim Gutheit ,  Reinhard Zachai ,  Eckart Bottger

发明人： Tim Gutheit ,  Reinhard Zachai ,  Eckart Bottger

IPC分类号： H01L23/14 ,  H01L29/12

CPC分类号： H01L23/142 ,  H01L2924/0002

摘要： The invention provides a composite structure for microelectronic components having a self-supporting metal plate, an electrically insulating layer adhering to the metal plate, and a functional layer adhering to the insulating layer for the application of at least one microelectronic component. An at least largely monocrystalline information layer which covers the metal plate at points is applied to the self-supporting metal plate. The regions of the surface of the metal plate which are free of the information layer are provided with the insulating layer. When the surface of the information layer is exposed at least in regions, the functional layer is deposited on the insulating layer and on the exposed information layer. The crystal information required for an epitaxial deposition of the functional layer is taken from the information layer.

摘要翻译： 本发明提供了一种用于具有自支撑金属板，粘附到金属板的电绝缘层和粘附到绝缘层以用于施加至少一个微电子部件的功能层的微电子部件的复合结构。 将至少大部分在点处覆盖金属板的单晶信息层施加到自支撑金属板。 没有信息层的金属板表面的区域设有绝缘层。 当至少在区域中暴露信息层的表面时，功能层沉积在绝缘层和暴露的信息层上。 功能层的外延沉积所需的晶体信息取自信息层。

公开(公告)号：US5767578A

公开(公告)日：1998-06-16

申请号：US634957

申请日：1996-04-19

申请人： Mike F. Chang ,  King Owyang ,  Fwu-Iuan Hshieh ,  Yueh-Se Ho ,  Jowei Dun ,  Hans-Jurgen Fusser ,  Reinhard Zachai

发明人： Mike F. Chang ,  King Owyang ,  Fwu-Iuan Hshieh ,  Yueh-Se Ho ,  Jowei Dun ,  Hans-Jurgen Fusser ,  Reinhard Zachai

IPC分类号： H01L23/29 ,  H01L23/367 ,  H01L23/373 ,  H01L23/34

CPC分类号： H01L23/3672 ,  H01L23/29 ,  H01L23/3732 ,  H01L2224/16 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/14

摘要： An integrated circuit chip has full trench dielectric isolation of each portion of the chip. Initially the chip substrate is of conventional thickness and has semiconductor devices formed in it. After etching trenches in the substrate and filling them with dielectric material, a heat sink cap is attached to the passivation layer on the substrate front side surface. The passivation layer is a CVD diamond film which provides both electrical insulation and thermal conductivity. The substrate backside surface is removed (by grinding and/or CMP) to expose the bottom portion of the trenches. This fully isolates each portion of the die and eliminates mechanical stresses at the trench bottoms. Thereafter drain or collector electrical contacts are provided on the substrate backside surface. In a flip chip version, frontside electrical contacts extend through the frontside passivation layer to the heat sink cap. In a surface mount version, vias are etched through the substrate, with surface mount posts formed on the vias, to contact the frontside electrical contacts and provide all electrical contacts on the substrate backside surface. The wafer is then scribed into die in both versions without need for further packaging.

摘要翻译： 集成电路芯片具有芯片每个部分的全沟槽绝缘隔离。 最初，芯片基板具有常规的厚度并且在其中形成半导体器件。 在蚀刻衬底中的沟槽并用电介质材料填充沟槽之后，将散热器盖附着到衬底前侧表面上的钝化层。 钝化层是提供电绝缘和导热性的CVD金刚石膜。 去除衬底背面（通过研磨和/或CMP）以暴露沟槽的底部。 这完全隔离了模具的每个部分，并消除了沟槽底部的机械应力。 此后，漏极或集电极电触点设置在基板背面上。 在倒装芯片版本中，前端电触点延伸穿过前侧钝化层到散热器盖。 在表面安装型式中，通孔穿过衬底被蚀刻，表面安装柱形成在通孔上，以接触前侧电触点并提供衬底背面上的所有电触头。 然后将晶片以两种版本刻成模具，而不需要进一步的包装。

公开(公告)号：US06274403B1

公开(公告)日：2001-08-14

申请号：US08411762

申请日：1995-07-17

申请人： Claus-Peter Klages ,  Xin Jiang ,  Hans-Jürgen Füsser ,  Martin Hartweg ,  Reinhard Zachai ,  Manfred Rösler

发明人： Claus-Peter Klages ,  Xin Jiang ,  Hans-Jürgen Füsser ,  Martin Hartweg ,  Reinhard Zachai ,  Manfred Rösler

IPC分类号： H01L310312

CPC分类号： C23C16/274 ,  C23C16/0209 ,  C30B25/105 ,  C30B29/04 ,  H01L21/02381 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02661

摘要： The invention relates to a method for producing heteroepitaxial diamond layers on Si-substrates by means of CVD and standard process gases, in which (a) during the nucleation phase a negative bias voltage is applied to the Si-substrate and (b) following the nucleation phase diamond deposition takes place.

摘要翻译： 本发明涉及通过CVD和标准工艺气体在Si衬底上制造异质外延金刚石层的方法，其中（a）在成核阶段期间，向Si衬底施加负偏置电压，以及（b） 成核相金刚石沉积发生。

公开(公告)号：US6054719A

公开(公告)日：2000-04-25

申请号：US639104

申请日：1996-04-22

申请人： Hans-Jurgen Fusser ,  Reinhard Zachai ,  Tim Gutheit

发明人： Hans-Jurgen Fusser ,  Reinhard Zachai ,  Tim Gutheit

IPC分类号： H01L21/04 ,  H01L29/16 ,  H01L29/267 ,  H01L29/06

CPC分类号： H01L29/1602 ,  H01L21/0405 ,  H01L29/16 ,  H01L29/267

摘要： The invention relates to a composite structure for an electronic component with an undoped diamond layer, at least one side of which is covered by a doped non-diamond layer, arranged on a growth substrate. The diamond layer has a thickness of less than 0.5 .mu.m. In addition, the conduction and/or valence bands of the diamond layer and the nondiamond layer exhibit such a band discontinuity that charge carries from the doped non-diamond layer which are excited optically and/or thermally, for example, can be drawn, with a reduction of their potential energy, into the valence and/or conduction band of the undoped diamond layer. This configuration causes a potential well to exist in the area of the diamond layer, at least in one direction, with a quantizing effect for the charge carriers drawn into the diamond layer.

摘要翻译： 本发明涉及一种具有未掺杂金刚石层的电子部件的复合结构，该金刚石层的至少一侧由掺杂的非金刚石层覆盖，布置在生长衬底上。 金刚石层的厚度小于0.5μm。 此外，金刚石层和非金刚石层的导电带和/或价带表现出这样的带状不连续性，即电荷从掺杂的非金刚石层进行光学和/或热激发，例如可以用 将它们的势能降低到未掺杂的金刚石层的价态和/或导带。 这种配置使得在金刚石层的区域中至少在一个方向上存在潜在的阱，并且对于载入金刚石层的电荷载流子具有量化效应。