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    Methods for selective deposition of graded materials on continuously fed objects
    2.
    发明授权
    Methods for selective deposition of graded materials on continuously fed objects 有权
    梯度材料选择性沉积在连续进料物体上的方法

    公开(公告)号：US07976899B2

    公开(公告)日：2011-07-12

    申请号：US11585295

    申请日：2006-10-23

    申请人： Min Yan ,  Ahmet Gun Erlat ,  Paul Alan McConnelee ,  Anil Raj Duggal ,  Svetlana Rogojevic

    发明人： Min Yan ,  Ahmet Gun Erlat ,  Paul Alan McConnelee ,  Anil Raj Duggal ,  Svetlana Rogojevic

    IPC分类号： B05D1/32

    CPC分类号： C23C14/042 ,  C23C14/044 ,  C23C14/562 ,  C23C16/042 ,  C23C16/545

    摘要： Embodiments of the invention include a selective deposition method that allows for coating of selective portions of an object, such as an electronic device, and inhibits coating of other selective portions of the object, such as the electric contacts. The selective deposition method includes providing a web to transport the object through a deposition chamber. The web may include and reference mechanisms to register the object relative to the web. The method further includes providing deposition material and a shadow mask that has open spaces in it to inhibit coating selective portions of the object. The deposition material serves as the coating material.

    摘要翻译： 本发明的实施例包括允许涂覆诸如电子设备的物体的选择性部分并且抑制诸如电触点的物体的其它选择部分的涂覆的选择性沉积方法。 选择性沉积方法包括提供网以通过沉积室输送物体。 网络可以包括用于相对于网络注册对象的参考机制。 该方法还包括提供沉积材料和在其中具有开放空间的荫罩以抑制物体的选择性部分的涂层。 沉积材料用作涂层材料。

    High throughput processes and systems for barrier film deposition and/or encapsulation of optoelectronic devices
    3.
    发明授权
    High throughput processes and systems for barrier film deposition and/or encapsulation of optoelectronic devices 有权
    用于光电子器件阻挡膜沉积和/或封装的高通量过程和系统

    公开(公告)号：US07976908B2

    公开(公告)日：2011-07-12

    申请号：US12122326

    申请日：2008-05-16

    申请人： Ahmet Gun Erlat ,  Anil Raj Duggal ,  Min Yan

    发明人： Ahmet Gun Erlat ,  Anil Raj Duggal ,  Min Yan

    IPC分类号： C23C16/513 ,  B05D5/12

    CPC分类号： C23C16/5096 ,  B05D1/62 ,  B05D2258/00 ,  H05H1/2406 ,  H05H2001/2412 ,  H05H2001/2437

    摘要： Processes for simultaneously encapsulating multiple optoelectronic devices and/or depositing a barrier film onto multiple substrates suitable for fabrication of optoelectronic devices thereon include the use of a plasma deposition apparatus having multiple pairs of opposing electrodes for deposition of reactants onto the substrate that is used to form the device or the complete device itself. The processes significantly reduce tact time relative to one at a time batch processing that is currently used for manufacturing optoelectronic devices.

    摘要翻译： 用于同时封装多个光电子器件和/或将阻挡膜沉积在适于制造其上的光电子器件的多个衬底上的工艺包括使用具有多对相对电极的等离子体沉积设备，用于将反应物沉积到衬底上用于形成 设备或整个设备本身。 这些过程相对于当前用于制造光电子器件的批次处理中的一个显着减少了生产时间。

    HIGH THROUGHPUT PROCESSES AND SYSTEMS FOR BARRIER FILM DEPOSITION AND/OR ENCAPSULATION OF OPTOELECTRONIC DEVICES
    6.
    发明申请
    HIGH THROUGHPUT PROCESSES AND SYSTEMS FOR BARRIER FILM DEPOSITION AND/OR ENCAPSULATION OF OPTOELECTRONIC DEVICES 有权
    用于遮挡膜沉积和/或光电装置封装的高通量处理和系统

    公开(公告)号：US20090286010A1

    公开(公告)日：2009-11-19

    申请号：US12122326

    申请日：2008-05-16

    申请人： Ahmet Gun Erlat ,  Anil Raj Duggal ,  Min Yan

    发明人： Ahmet Gun Erlat ,  Anil Raj Duggal ,  Min Yan

    IPC分类号： C23C16/513 ,  B05D5/12

    CPC分类号： C23C16/5096 ,  B05D1/62 ,  B05D2258/00 ,  H05H1/2406 ,  H05H2001/2412 ,  H05H2001/2437

    摘要： Processes for simultaneously encapsulating multiple optoelectronic devices and/or depositing a barrier film onto multiple substrates suitable for fabrication of optoelectronic devices thereon include the use of a plasma deposition apparatus having multiple pairs of opposing electrodes for deposition of reactants onto the substrate that is used to form the device or the complete device itself. The processes significantly reduce tact time relative to one at a time batch processing that is currently used for manufacturing optoelectronic devices.

    摘要翻译： 用于同时封装多个光电子器件和/或将阻挡膜沉积在适于制造其上的光电子器件的多个衬底上的工艺包括使用具有多对相对电极的等离子体沉积设备，用于将反应物沉积到衬底上用于形成 设备或整个设备本身。 这些过程相对于当前用于制造光电子器件的批次处理中的一个显着减少了生产时间。