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1.发明授权公开(公告)号：US09165835B2
公开(公告)日：2015-10-20
申请号：US13221214
申请日：2011-08-30
申请人： Ming-Hsi Yeh , Chun-Yi Lee , Chi-Ming Yang , Chin-Hsiang Lin
发明人： Ming-Hsi Yeh , Chun-Yi Lee , Chi-Ming Yang , Chin-Hsiang Lin
IPC分类号： H01L21/425 , H01L21/8234 , H01L21/28 , H01L29/51
CPC分类号： H01L21/823431 , H01L21/28255 , H01L21/28264 , H01L29/513 , H01L29/517
摘要： Provided is a method and structure for utilizing advance channel substrate materials in semiconductor manufacturing. Advanced channel substrate materials such as germanium and Group III-V channel substrate materials, are advantageously utilized. One or more capping films including at least a nitride layer are formed over the channel substrate prior to patterning, ion implantation and the subsequent stripping and wet cleaning operations. With the capping layers intact during these operations, attack of the channel substrate material is prevented and the protective films are easily removed subsequently. The films are dimensioned in conjunction with the ion implantation operation to enable the desired dopant profile and concentration to be formed in the channel substrate material.
摘要翻译： 提供了一种在半导体制造中利用前置沟道衬底材料的方法和结构。 可以有利地利用诸如锗和III-V族通道衬底材料的高级通道衬底材料。 在图案化，离子注入和随后的剥离和湿式清洗操作之前，在沟道基底上方形成至少包含至少氮化物层的一个或多个封盖膜。 在这些操作期间，封盖层完好无损，防止了通道衬底材料的侵蚀，随后保护膜很容易被去除。 这些膜的尺寸与离子注入操作相结合，使得能够在通道衬底材料中形成所需的掺杂剂分布和浓度。
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公开(公告)号：US20130068248A1
公开(公告)日：2013-03-21
申请号：US13233568
申请日：2011-09-15
CPC分类号： H01L21/02057 , H01L21/67051
摘要： The present disclosure provides a method including providing a chamber having a first inlet and a second inlet. A solution of a de-ionized (DI) water and an acid (e.g., a dilute acid) is provided to the chamber via the first inlet. A carrier gas (e.g., N2) is provided to the chamber via the second inlet. The solution and the carrier gas are in the chamber and then from the chamber onto a single semiconductor wafer. In an embodiment, the solution includes a dilute HCl and DI water.
摘要翻译： 本公开提供了一种方法，包括提供具有第一入口和第二入口的室。 通过第一入口向腔室提供去离子（DI）水和酸（例如稀酸）的溶液。 载气（例如，N2）经由第二入口提供给腔室。 溶液和载气在室中，然后从室到单个半导体晶片。 在一个实施方案中，溶液包括稀HCl和去离子水。
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公开(公告)号：US08657963B2
公开(公告)日：2014-02-25
申请号：US13240583
申请日：2011-09-22
IPC分类号： B08B1/00
CPC分类号： H01L21/67046 , H01L21/67051
摘要： The present disclosure provides a method and apparatus for cleaning a semiconductor wafer. In an embodiment of the method, a single wafer cleaning apparatus is provided and a wafer is positioned in the apparatus. A first chemical spray is dispensed onto a front surface of the wafer. A back surface of the wafer is cleaned while dispensing the first chemical spray. The cleaning of the back surface may include a brush and spray of cleaning fluids. An apparatus operable to clean the front surface and the back surface of a single semiconductor wafer is also described.
摘要翻译： 本公开提供了一种用于清洁半导体晶片的方法和装置。 在该方法的一个实施例中，提供单个晶片清洁装置，并且将晶片定位在装置中。 将第一化学喷雾分配到晶片的前表面上。 在分配第一化学喷雾的同时清洁晶片的背面。 后表面的清洁可以包括刷子和喷射清洁流体。 还描述了可操作以清洁单个半导体晶片的前表面和后表面的装置。
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公开(公告)号：US20130074872A1
公开(公告)日：2013-03-28
申请号：US13240583
申请日：2011-09-22
CPC分类号： H01L21/67046 , H01L21/67051
摘要： The present disclosure provides a method and apparatus for cleaning a semiconductor wafer. In an embodiment of the method, a single wafer cleaning apparatus is provided and a wafer is positioned in the apparatus. A first chemical spray is dispensed onto a front surface of the wafer. A back surface of the wafer is cleaned while dispensing the first chemical spray. The cleaning of the back surface may include a brush and spray of cleaning fluids. An apparatus operable to clean the front surface and the back surface of a single semiconductor wafer is also described.
摘要翻译： 本公开提供了一种用于清洁半导体晶片的方法和装置。 在该方法的一个实施例中，提供单个晶片清洁装置，并将晶片定位在装置中。 将第一化学喷雾分配到晶片的前表面上。 在分配第一化学喷雾的同时清洁晶片的背面。 后表面的清洁可以包括刷子和喷射清洁流体。 还描述了可操作以清洁单个半导体晶片的前表面和后表面的装置。
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公开(公告)号：US20130045606A1
公开(公告)日：2013-02-21
申请号：US13210998
申请日：2011-08-16
IPC分类号： H01L21/306 , B08B3/08 , B08B3/02
CPC分类号： H01L21/67051 , B08B3/024
摘要： A method includes providing a wafer and providing a first spray bar spaced a distance from the wafer. A first spray is dispensed from the first spray bar onto a first portion (e.g., half) of the wafer. Thereafter, the wafer is rotated. A second spray is dispensed from the first spray bar onto a second portion (e.g., half) of the rotated wafer. In embodiments, a plurality of spray bars are positioned above the wafer. One or more of the spray bars may be tunable in separation distance and/or angle of dispensing.
摘要翻译： 一种方法包括提供晶片并提供与晶片间隔开一定距离的第一喷杆。 将第一喷雾从第一喷雾棒分配到晶片的第一部分（例如一半）上。 此后，晶片旋转。 从第一喷杆将第二喷雾分配到旋转的晶片的第二部分（例如，一半）上。 在实施例中，多个喷杆位于晶片上方。 喷雾棒中的一个或多个可以以分离距离和/或分配角度来调节。
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公开(公告)号：US20120202156A1
公开(公告)日：2012-08-09
申请号：US13022931
申请日：2011-02-08
申请人： Ming-Hsi Yeh , Yu-Fu Lin , Shao-Yen Ku , Chi-Ming Yang , Chin-Hsiang Lin
发明人： Ming-Hsi Yeh , Yu-Fu Lin , Shao-Yen Ku , Chi-Ming Yang , Chin-Hsiang Lin
IPC分类号： G03F7/20
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/32139 , H01L21/823814 , H01L21/823828
摘要： A method of making an integrated circuit is provided. The method includes providing a substrate having a photosensitive layer. The photosensitive layer is exposed to a radiation beam. The exposed photosensitive layer is developed in a first chamber. In the first chamber, a cleaning process is performed on the developed photosensitive layer. The cleaning process includes using a rinse solution including at least one of ozone, hydrogen peroxide, and oxalic acid.
摘要翻译： 提供一种制造集成电路的方法。 该方法包括提供具有感光层的基底。 感光层暴露于辐射束。 曝光的感光层在第一室中显影。 在第一室中，对显影的感光层进行清洁处理。 清洁方法包括使用包括臭氧，过氧化氢和草酸中的至少一种的冲洗溶液。
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公开(公告)号：US09299593B2
公开(公告)日：2016-03-29
申请号：US13210998
申请日：2011-08-16
CPC分类号： H01L21/67051 , B08B3/024
摘要： A method includes providing a wafer and providing a first spray bar spaced a distance from the wafer. A first spray is dispensed from the first spray bar onto a first portion (e.g., half) of the wafer. Thereafter, the wafer is rotated. A second spray is dispensed from the first spray bar onto a second portion (e.g., half) of the rotated wafer. In embodiments, a plurality of spray bars are positioned above the wafer. One or more of the spray bars may be tunable in separation distance and/or angle of dispensing.
摘要翻译： 一种方法包括提供晶片并提供与晶片间隔开一定距离的第一喷杆。 将第一喷雾从第一喷雾棒分配到晶片的第一部分（例如一半）上。 此后，晶片旋转。 从第一喷杆将第二喷雾分配到旋转的晶片的第二部分（例如，一半）上。 在实施例中，多个喷杆位于晶片上方。 喷雾棒中的一个或多个可以以分离距离和/或分配角度来调节。
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公开(公告)号：US08926762B2
公开(公告)日：2015-01-06
申请号：US13226216
申请日：2011-09-06
CPC分类号： B08B3/12 , B08B3/02 , H01L21/67028 , H01L21/6704
摘要： Methods and apparatus for a movable megasonic wafer probe. A method is disclosed including positioning a movable probe on a wafer surface, the movable probe having an open bottom portion that exposes a portion of the wafer surface; applying a liquid onto the wafer surface through a bottom portion of the movable probe; and moving the movable probe at a predetermined scan speed to traverse the wafer surface, applying the liquid to the wafer surface while moving over the wafer surface. In additional embodiments the method includes providing a transducer for applying megasonic energy to the wafer surface. Apparatus embodiments are disclosed including the movable megasonic wafer probe.
摘要翻译： 移动式超声波晶片探针的方法和装置。 公开了一种方法，包括将可移动探针定位在晶片表面上，所述可移动探针具有暴露晶片表面的一部分的开放底部; 通过可移动探针的底部将液体施加到晶片表面上; 并且以预定的扫描速度移动可移动探针以穿过晶片表面，同时在晶片表面上移动时将液体施加到晶片表面。 在另外的实施例中，该方法包括提供用于将兆声波能量施加到晶片表面的换能器。 公开了包括可移动兆声晶片探针的装置实施例。
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公开(公告)号：US08541270B2
公开(公告)日：2013-09-24
申请号：US13269107
申请日：2011-10-07
申请人： Ming-Hsi Yeh , Chi-Ming Yang , Chin-Hsiang Lin
发明人： Ming-Hsi Yeh , Chi-Ming Yang , Chin-Hsiang Lin
IPC分类号： H01L21/336
CPC分类号： H01L29/66818 , H01L29/66795
摘要： Semiconductor materials, particularly III-V materials used to form, e.g., a finlike structure can suffer structural damage during chemical mechanical polishing steps. This damage can be reduced or eliminated by oxidizing the damaged surface of the material and then etching away the oxidized material. The etching step can be accomplished simultaneously with a step of etching back a patterned oxide layers, such as a shallow trench isolation layer.
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公开(公告)号：US08921177B2
公开(公告)日：2014-12-30
申请号：US13189108
申请日：2011-07-22
申请人： Ming-Hsi Yeh , Hsien-Hsin Lin , Ying-Hsueh Chang Chien , Yi-Fang Pai , Chi-Ming Yang , Chin-Hsiang Lin
发明人： Ming-Hsi Yeh , Hsien-Hsin Lin , Ying-Hsueh Chang Chien , Yi-Fang Pai , Chi-Ming Yang , Chin-Hsiang Lin
IPC分类号： H01L21/8238 , H01L21/20
CPC分类号： H01L29/665 , H01L21/823807 , H01L21/823814 , H01L21/823864 , Y10S438/976
摘要： A method for fabricating an integrated device is disclosed. A protective layer is formed over a gate structure when forming epitaxial (epi) features adjacent to another gate structure uncovered by the protective layer. The protective layer is thereafter removed after forming the epitaxial (epi) features. The disclosed method provides an improved method for removing the protective layer without substantial defects resulting. In an embodiment, the improved formation method is achieved by providing a protector over an oxide-base material, and then removing the protective layer using a chemical comprising hydrofluoric acid.
摘要翻译： 公开了一种用于制造集成器件的方法。 当形成与由保护层未覆盖的另一个栅极结构相邻的外延（epi）特征时，在栅极结构上形成保护层。 此后，在形成外延（epi）特征之后，去除保护层。 所公开的方法提供了用于去除保护层而没有实质缺陷的改进方法。 在一个实施方案中，改进的形成方法通过在氧化物基材料上提供保护剂，然后使用包含氢氟酸的化学品除去保护层来实现。
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