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公开(公告)号:US20060110106A1
公开(公告)日:2006-05-25
申请号:US11105514
申请日:2005-04-14
申请人: Ming-Lang Tsai , Ming-Jie Chou , Bor-Chen Tsai , Zong-Yuan Wu , Chih-Hsiang Ko , Chin-Sheng Chang , Yii-Tay Chiou , Chun-Hsun Chu , Jung-Tai Chen
发明人: Ming-Lang Tsai , Ming-Jie Chou , Bor-Chen Tsai , Zong-Yuan Wu , Chih-Hsiang Ko , Chin-Sheng Chang , Yii-Tay Chiou , Chun-Hsun Chu , Jung-Tai Chen
IPC分类号: G02B6/36
CPC分类号: G02B6/4246
摘要: A fiber waveguide optical subassembly uses the multi-mode fiber to increase the alignment tolerance between the active optical element and the waveguide. The filter is thinner to lower the dispersion due to the optical coupling gap. The subassembly further combines the optical bench to achieve passive positioning. Therefore it reduces the cost and enhances the transmission rate.
摘要翻译: 光纤波导光学子组件使用多模光纤来增加有源光学元件与波导之间的对准公差。 由于光耦合间隙,滤光片较薄以降低色散。 该子组件进一步组合光学台以实现被动定位。 因此降低成本,提高传输速率。
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公开(公告)号:US07409124B2
公开(公告)日:2008-08-05
申请号:US11105514
申请日:2005-04-14
申请人: Ming-Lang Tsai , Ming Jie Chou , Bor-Chen Tsai , Zong-Yuan Wu , Chih-Hsiang Ko , Chin-Sheng Chang , Yii-Tay Chiou , Chun-Hsun Chu , Jung-Tai Chen
发明人: Ming-Lang Tsai , Ming Jie Chou , Bor-Chen Tsai , Zong-Yuan Wu , Chih-Hsiang Ko , Chin-Sheng Chang , Yii-Tay Chiou , Chun-Hsun Chu , Jung-Tai Chen
CPC分类号: G02B6/4246
摘要: A fiber waveguide optical subassembly uses the multi-mode fiber to increase the alignment tolerance between the active optical element and the waveguide. The filter is thinner to lower the dispersion due to the optical coupling gap. The subassembly further combines the optical bench to achieve passive positioning. Therefore it reduces the cost and enhances the transmission rate.
摘要翻译: 光纤波导光学子组件使用多模光纤来增加有源光学元件与波导之间的对准公差。 由于光耦合间隙,滤光片较薄以降低色散。 该子组件进一步组合光学台以实现被动定位。 因此降低成本,提高传输速率。
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公开(公告)号:US20130153418A1
公开(公告)日:2013-06-20
申请号:US13443902
申请日:2012-04-11
申请人: Lung-Tai Chen , Chin-Sheng Chang , Jing-Yuan Lin , Chun-Hsun Chu
发明人: Lung-Tai Chen , Chin-Sheng Chang , Jing-Yuan Lin , Chun-Hsun Chu
CPC分类号: B81C1/00293 , B81C2203/0145 , B81C2203/019 , G01D11/26
摘要: A sensing device is provided. A suction port of a chamber is sealed by using a gas sealing layer with a gas sealing filter. The gas sealing filter has a plurality of one-way passes. The one-way passes have a width in a range of several nanometers to several hundred nanometers. A gas molecular exhausts to the outside of the chamber through the one-way passes. Owing to preventing the material of gas sealing layer from flowing into the chamber by the gas sealing filter, superior sealing performance is achieved as compared to those adopting solder or sealing material, thereby facilitating control of the condition in the chamber.
摘要翻译: 提供感测装置。 通过使用具有气体密封过滤器的气体密封层来密封腔室的吸入口。 气体密封过滤器具有多个单程通道。 单向通道的宽度在几纳米到几百纳米的范围内。 气体分子通过单程通过排气到室外。 由于通过气体密封过滤器防止气体密封层的材料流入室,与使用焊料或密封材料的密封性相比,实现了优异的密封性能,从而有助于控制室内的状态。
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公开(公告)号:US07009248B2
公开(公告)日:2006-03-07
申请号:US10677676
申请日:2003-10-02
申请人: Yin-Pin Wang , Chin-Sheng Chang
发明人: Yin-Pin Wang , Chin-Sheng Chang
IPC分类号: H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号: H01L29/0847 , H01L21/26586 , H01L21/28114 , H01L29/42376 , H01L29/6659 , H01L29/66659 , H01L29/7835 , H01L29/7836
摘要: A semiconductor device (1) has a source (2) a gate (3) and a drain (4), a single deep-pocket ion implant (8) in a source-drain depletion region, and a single shallow-pocket ion implant (9) in the source-drain depletion region.
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公开(公告)号:US07253062B2
公开(公告)日:2007-08-07
申请号:US11245377
申请日:2005-10-06
申请人: Yin-Pin Wang , Chin-Sheng Chang
发明人: Yin-Pin Wang , Chin-Sheng Chang
IPC分类号: H01L21/336 , H01L21/425
CPC分类号: H01L29/0847 , H01L21/26586 , H01L21/28114 , H01L29/42376 , H01L29/6659 , H01L29/66659 , H01L29/7835 , H01L29/7836
摘要: A semiconductor device (1) has a source (2) a gate (3) and a drain (4), a single deep-pocket ion implant (8) in a source-drain depletion region, and a single shallow-pocket ion implant (9) in the source-drain depletion region.
摘要翻译: 半导体器件(1)具有源极(2),栅极(3)和漏极(4),源极 - 漏极耗尽区域中的单个深孔离子注入(8)和单个浅口离子注入 (9)在源 - 漏耗尽区。
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公开(公告)号:US20060081925A1
公开(公告)日:2006-04-20
申请号:US11245377
申请日:2005-10-06
申请人: Yin-Pin Wang , Chin-Sheng Chang
发明人: Yin-Pin Wang , Chin-Sheng Chang
IPC分类号: H01L29/76
CPC分类号: H01L29/0847 , H01L21/26586 , H01L21/28114 , H01L29/42376 , H01L29/6659 , H01L29/66659 , H01L29/7835 , H01L29/7836
摘要: A semiconductor device (1) has a source (2) a gate (3) and a drain (4), a single deep-pocket ion implant (8) in a source-drain depletion region, and a single shallow-pocket ion implant (9) in the source-drain depletion region.
摘要翻译: 半导体器件(1)具有源极(2),栅极(3)和漏极(4),源极 - 漏极耗尽区域中的单个深孔离子注入(8)和单个浅口离子注入 (9)在源 - 漏耗尽区。
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公开(公告)号:US20050073013A1
公开(公告)日:2005-04-07
申请号:US10677676
申请日:2003-10-02
申请人: Yin-Pin Wang , Chin-Sheng Chang
发明人: Yin-Pin Wang , Chin-Sheng Chang
IPC分类号: H01L21/265 , H01L21/28 , H01L21/336 , H01L29/08 , H01L29/423 , H01L29/76 , H01L29/78
CPC分类号: H01L29/0847 , H01L21/26586 , H01L21/28114 , H01L29/42376 , H01L29/6659 , H01L29/66659 , H01L29/7835 , H01L29/7836
摘要: A semiconductor device (1) has a source (2) a gate (3) and a drain (4), a single deep-pocket ion implant (8) in a source-drain depletion region, and a single shallow-pocket ion implant (9) in the source-drain depletion region.
摘要翻译: 半导体器件(1)具有源极(2),栅极(3)和漏极(4),源极 - 漏极耗尽区域中的单个深孔离子注入(8)和单个浅口离子注入 (9)在源 - 漏耗尽区。
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