公开(公告)号：US20080293174A1

公开(公告)日：2008-11-27

申请号：US12007050

申请日：2008-01-04

申请人： Ming-Shun Lee ,  Shu-Wei Chiu ,  Yea-Chen Lee

发明人： Ming-Shun Lee ,  Shu-Wei Chiu ,  Yea-Chen Lee

IPC分类号： H01L21/00

CPC分类号： H01L25/0753 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming LED array is disclosed herein. First, a LED wafer, a substrate having a LED epitaxial layer thereon, is cut into a plurality of LED sticks. Then, each space layer is bonded between every two LED sticks to form a LED array.

摘要翻译： 本文公开了一种用于形成LED阵列的方法。 首先，将LED晶片，其上具有LED外延层的基板切割成多个LED棒。 然后，在每两个LED棒之间粘合每个空间层以形成LED阵列。

公开(公告)号：US20120043522A1

公开(公告)日：2012-02-23

申请号：US12858855

申请日：2010-08-18

申请人： Liang-Jyi YAN ,  Yea-Chen Lee

发明人： Liang-Jyi YAN ,  Yea-Chen Lee

IPC分类号： H01L33/04 ,  H01L33/30 ,  H01L33/10

CPC分类号： H01L33/007 ,  H01L33/20 ,  H01L33/32 ,  H01L33/46

摘要： The present invention discloses a high-reflectivity and low-defect density LED structure. A patterned dielectric layer is embedded in a sapphire substrate via semiconductor processes, such as etching and deposition. The dielectric layer is formed of two materials which are alternately stacked and have different refractive indexes. An N-type semiconductor layer, an activation layer and a light emitting layer which is a P-type semiconductor layer are sequentially formed on the sapphire substrate. An N-type electrode and a P-type electrode are respectively coated on the N-type semiconductor layer and the P-type semiconductor layer. The dielectric layer can lower the defect density of the light emitting layer during the epitaxial growth process. Further, the dielectric layer can function as a high-reflectivity area to reflect light generated by the light emitting layer and the light is projected downward to be emitted from the top or the lateral. Thereby is greatly increased the light-extraction efficiency.

公开(公告)号：US08035123B2

公开(公告)日：2011-10-11

申请号：US12411816

申请日：2009-03-26

申请人： Liang-Jyi Yan ,  Chang-Han Chiang ,  Yea-Chen Lee ,  Chih-Sung Chang

发明人： Liang-Jyi Yan ,  Chang-Han Chiang ,  Yea-Chen Lee ,  Chih-Sung Chang

IPC分类号： H01L33/00

CPC分类号： H01L33/405

摘要： The present invention discloses a high light-extraction efficiency LED structure, wherein metallic pads and metallic mesh wires made of an aluminum-silver alloy are formed on an LED, whereby the high-reflectivity aluminum-silver alloy makes the light incident on the metallic pads and metallic mesh wires reflected once more or repeatedly and then emitted from the surface or lateral side of the LED, wherefore the present invention can decrease the light loss and increase the light-extraction efficiency.

摘要翻译： 本发明公开了一种高光提取效率LED结构，其中在LED上形成由铝 - 银合金制成的金属焊盘和金属网线，由此高反射率铝 - 银合金使光入射到金属焊盘上 金属网线再次反射再反射，然后从LED的表面或侧面发射，因此本发明可以减少光损失并提高光提取效率。

公开(公告)号：US20100243985A1

公开(公告)日：2010-09-30

申请号：US12411816

申请日：2009-03-26

申请人： Liang-Jyi Yan ,  Chang-Han Chiang ,  Yea-Chen Lee ,  Chih-Sung Chang

发明人： Liang-Jyi Yan ,  Chang-Han Chiang ,  Yea-Chen Lee ,  Chih-Sung Chang

IPC分类号： H01L33/00

CPC分类号： H01L33/405

摘要： The present invention discloses a high light-extraction efficiency LED structure, wherein metallic pads and metallic mesh wires made of an aluminum-silver alloy are formed on an LED, whereby the high-reflectivity aluminum-silver alloy makes the light incident on the metallic pads and metallic mesh wires reflected once more or repeatedly and then emitted from the surface or lateral side of the LED, wherefore the present invention can decrease the light loss and increase the light-extraction efficiency.

摘要翻译： 本发明公开了一种高光提取效率LED结构，其中在LED上形成由铝 - 银合金制成的金属焊盘和金属网线，由此高反射率铝 - 银合金使光入射到金属焊盘上 金属网线再次反射再反射，然后从LED的表面或侧面发射，因此本发明可以减少光损失并提高光提取效率。

公开(公告)号：US08546165B2

公开(公告)日：2013-10-01

申请号：US13227905

申请日：2011-09-08

申请人： Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang ,  Yea-Chen Lee ,  Hsing-Kuo Hsia

发明人： Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang ,  Yea-Chen Lee ,  Hsing-Kuo Hsia

IPC分类号： H01L21/00 ,  H01L29/20 ,  H01L33/32

CPC分类号： H01L33/32 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/16 ,  H01L33/30 ,  H01L33/325

摘要： A seed layer for growing a group III-V semiconductor structure is embedded in a dielectric material on a carrier substrate. After the group III-V semiconductor structure is grown, the dielectric material is removed by wet etch to detach the carrier substrate. The group III-V semiconductor structure includes a thick gallium nitride layer of at least 100 microns or a light-emitting structure.

摘要翻译： 用于生长III-V族半导体结构的种子层嵌入在载体衬底上的电介质材料中。 在III-V族半导体结构生长之后，通过湿蚀刻去除介电材料以分离载体衬底。 III-V族半导体结构包括至少100微米的厚氮化镓层或发光结构。

公开(公告)号：US20130140592A1

公开(公告)日：2013-06-06

申请号：US13308784

申请日：2011-12-01

申请人： Yea-Chen Lee ,  Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang

发明人： Yea-Chen Lee ,  Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang

IPC分类号： H01L33/22 ,  H01L33/36

CPC分类号： H01L33/0095 ,  H01L33/22 ,  H01L2933/0091

摘要： A light emitting diode structure and methods of manufacturing the same are disclosed. In an example, a light emitting diode structure includes a crystalline substrate having a thickness that is greater than or equal to about 250 μm, wherein the crystalline substrate has a first roughened surface and a second roughened surface, the second roughened surface being opposite the first roughened surface; a plurality of epitaxy layers disposed over the first roughened surface, the plurality of epitaxy layers being configured as a light emitting diode; and another substrate bonded to the crystalline substrate such that the plurality of epitaxy layers are disposed between the another substrate and the first roughened surface of the crystalline substrate.

摘要翻译： 公开了一种发光二极管结构及其制造方法。 在一个示例中，发光二极管结构包括具有大于或等于约250μm的厚度的晶体衬底，其中所述晶体衬底具有第一粗糙表面和第二粗糙表面，所述第二粗糙表面与所述第一粗糙表面相对， 粗糙表面; 设置在所述第一粗糙表面上的多个外延层，所述多个外延层被配置为发光二极管; 以及另一衬底，其结合到所述晶体衬底，使得所述多个外延层设置在所述另一衬底和所述结晶衬底的所述第一粗糙表面之间。

公开(公告)号：US20130095581A1

公开(公告)日：2013-04-18

申请号：US13276108

申请日：2011-10-18

申请人： Yea-Chen Lee ,  Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang

发明人： Yea-Chen Lee ,  Jung-Tang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang

IPC分类号： H01L21/50 ,  H01L33/48

CPC分类号： H01L33/0095 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2924/00

摘要： A LED die and method for bonding, dicing, and forming the LED die are disclosed. In an example, the method includes forming a LED wafer, wherein the LED wafer includes a substrate and a plurality of epitaxial layers disposed over the substrate, wherein the plurality of epitaxial layers are configured to form a LED; bonding the LED wafer to a base-board to form a LED pair; and after bonding, dicing the LED pair, wherein the dicing includes simultaneously dicing the LED wafer and the base-board, thereby forming LED dies.

摘要翻译： 公开了用于接合，切割和形成LED管芯的LED管芯和方法。 在一个示例中，该方法包括形成LED晶片，其中LED晶片包括衬底和设置在衬底上的多个外延层，其中多个外延层被配置为形成LED; 将LED晶片连接到基板以形成LED对; 在接合之后，对LED对进行切割，其中，切割包括同时切割LED晶片和基板，从而形成LED管芯。

公开(公告)号：USD638377S1

公开(公告)日：2011-05-24

申请号：US29358105

申请日：2010-03-23

申请人： Liang-Jyi Yan ,  Yea-Chen Lee ,  Chih-Sung Chang

设计人： Liang-Jyi Yan ,  Yea-Chen Lee ,  Chih-Sung Chang

公开(公告)号：US20130187122A1

公开(公告)日：2013-07-25

申请号：US13354162

申请日：2012-01-19

申请人： Yea-Chen Lee ,  Jung-Gang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang

发明人： Yea-Chen Lee ,  Jung-Gang Chu ,  Ching-Hua Chiu ,  Hung-Wen Huang

IPC分类号： H01L33/04 ,  H01L33/60

CPC分类号： H01L33/387 ,  H01L33/405 ,  H01L2933/0016

摘要： The present disclosure involves a method of fabricating a lighting apparatus. The method includes forming a first III-V group compound layer over a substrate. The first III-V group compound layer has a first type of conductivity. A multiple quantum well (MQW) layer is formed over the first III-V group compound layer. A second III-V group compound layer is then formed over the MQW layer. The second III-V group compound layer has a second type of conductivity different from the first type of conductivity. Thereafter, a plurality of conductive components is formed over the second III-V group compound layer. A light-reflective layer is then formed over the second III-V group compound layer and over the conductive components. The conductive components each have better adhesive and electrical conduction properties than the light-reflective layer.

摘要翻译： 本公开涉及一种制造照明装置的方法。 该方法包括在衬底上形成第一III-V族化合物层。 第一III-V族化合物层具有第一类导电性。 在第一III-V族化合物层上形成多量子阱（MQW）层。 然后在MQW层上形成第二个III-V族化合物层。 第二III-V族化合物层具有不同于第一类导电性的第二类型的导电性。 此后，在第二III-V族化合物层上形成多个导电组分。 然后在第二III-V族化合物层上和导电组分之上形成光反射层。 导电组件各自具有比光反射层更好的粘合和导电性能。

公开(公告)号：US08158998B2

公开(公告)日：2012-04-17

申请号：US12858855

申请日：2010-08-18

申请人： Liang-Jyi Yan ,  Yea-Chen Lee

发明人： Liang-Jyi Yan ,  Yea-Chen Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  H01L33/20 ,  H01L33/32 ,  H01L33/46

摘要： The present invention discloses a high-reflectivity and low-defect density LED structure. A patterned dielectric layer is embedded in a sapphire substrate via semiconductor processes, such as etching and deposition. The dielectric layer is formed of two materials which are alternately stacked and have different refractive indexes. An N-type semiconductor layer, an activation layer and a light emitting layer which is a P-type semiconductor layer are sequentially formed on the sapphire substrate. An N-type electrode and a P-type electrode are respectively coated on the N-type semiconductor layer and the P-type semiconductor layer. The dielectric layer can lower the defect density of the light emitting layer during the epitaxial growth process. Further, the dielectric layer can function as a high-reflectivity area to reflect light generated by the light emitting layer and the light is projected downward to be emitted from the top or the lateral. Thereby is greatly increased the light-extraction efficiency.

摘要翻译： 本发明公开了一种高反射率和低缺陷密度的LED结构。 图案化的电介质层通过诸如蚀刻和沉积的半导体工艺嵌入蓝宝石衬底中。 电介质层由交替层叠并具有不同折射率的两种材料形成。 在蓝宝石衬底上依次形成N型半导体层，激活层和作为P型半导体层的发光层。 N型电极和P型电极分别涂覆在N型半导体层和P型半导体层上。 介电层可以在外延生长过程中降低发光层的缺陷密度。 此外，电介质层可以用作高反射区域以反射由发光层产生的光，并且光向下突出以从顶部或侧面发射。 从而大大提高了光提取效率。