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    High sensitivity optical magnetic field sensors having a magnetooptical garnet-type ferrite polycrystal
    2.
    发明授权
    High sensitivity optical magnetic field sensors having a magnetooptical garnet-type ferrite polycrystal 失效
    高灵敏度光电磁场传感器，具有磁性GARNET型铁素体多晶

    公开(公告)号：US5140156A

    公开(公告)日：1992-08-18

    申请号：US572227

    申请日：1990-08-24

    申请人： Minoru Imaeda ,  Emi Asai ,  Katsunori Okamoto

    发明人： Minoru Imaeda ,  Emi Asai ,  Katsunori Okamoto

    IPC分类号： G01R33/032

    CPC分类号： G01R33/0322

    摘要： A high sensitivity optomagnetical sensor comprising a light source, a magnetic field-detecting section, a light-receiving section for receiving light emitted from the light source through the magnetic field-detecting section, a measurement-controlling section for controlling the light source, the magnetic field-detecting section, and the light-receiving section, and for measuring an intensity of light received by the light-receiving section, and light transmission paths using optical fibers for optically connecting the light-source section and the magnetic field-detecting section and optically connecting the magnetic field-detecting section and the light-receiving section. The magnetic field-detecting section is constituted by a polarizer, an analyzer and a magnetooptical element arranged between the polarizer and the analyzer. A garnet type ferrite polycrystal is used as a magnetooptical element of the sensor. The ferrite polycrystal has a Verdet constant of not less than 1 deg/cm.Oe, a thickness of not less than 100 .mu.m, a light transmittance of not less than 10%, a temperature dependency on detecting the magnetic field in a temperature range of -20.degree. to +60.degree. C. being within .+-.1.0%, a magnetic field-detecting precision of not more than 1/10,000, and a composition of Bi.sub.x Gd.sub.y Y.sub.z Fe.sub.5 O.sub.12 (X+Y+Z=3).

    Method for manufacturing group III nitride single crystals
    4.
    发明申请
    Method for manufacturing group III nitride single crystals 有权
    III族氮化物单晶的制造方法

    公开(公告)号：US20100107969A1

    公开(公告)日：2010-05-06

    申请号：US12655826

    申请日：2010-01-08

    申请人： Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Makoto Miyoshi ,  Minoru Imaeda

    发明人： Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Makoto Miyoshi ,  Minoru Imaeda

    IPC分类号： C30B7/00

    CPC分类号： C30B29/403 ,  C30B23/02 ,  C30B25/02 ,  C30B25/20 ,  C30B29/406

    摘要： An underlying film 2 of a group III nitride is formed on a substrate 1 by vapor phase deposition. The substrate 1 and the underlying film 2 are subjected to heat treatment in the present of hydrogen to remove the underlying film 2 so that the surface of the substrate 1 is roughened. A seed crystal film 4 of a group III nitride single crystal is formed on a surface of a substrate 1A by vapor phase deposition. A group III nitride single crystal 5 is grown on the seed crystal film 4 by flux method.

    摘要翻译： 通过气相沉积在衬底1上形成III族氮化物的底层膜2。 将基板1和下面的薄膜2在氢气中进行热处理以除去下面的薄膜2，从而使基底1的表面变粗糙。 通过气相沉积在基板1A的表面上形成III族氮化物单晶的晶种膜4。 通过助熔法在晶种膜4上生长III族氮化物单晶5。

    APPARATUS FOR DEPOSITING SILICON-BASED THIN FILM AND METHOD FOR DEPOSITING SILICON-BASED THIN FILM
    5.
    发明申请
    APPARATUS FOR DEPOSITING SILICON-BASED THIN FILM AND METHOD FOR DEPOSITING SILICON-BASED THIN FILM 有权
    沉积硅基薄膜的方法和沉积硅基薄膜的方法

    公开(公告)号：US20090246942A1

    公开(公告)日：2009-10-01

    申请号：US12411507

    申请日：2009-03-26

    申请人： Minoru Imaeda ,  Yuichiro Imanishi ,  Takao Saito

    发明人： Minoru Imaeda ,  Yuichiro Imanishi ,  Takao Saito

    IPC分类号： H01L21/20 ,  C23C16/503

    CPC分类号： H01J37/32568 ,  C23C16/24 ,  C23C16/515 ,  C23C16/54 ,  C23C16/545 ,  H01J37/32018 ,  H01J37/32027 ,  H01J37/32045 ,  H01J37/3244

    摘要： A silicon-based thin film depositing apparatus, including a plurality of transparent electrodes disposed to face corresponding counter electrodes with a space therebetween. Subsequently, while injecting a raw material gas from raw material gas injection orifices toward the supporting electrodes and also injecting a barrier gas from barrier gas injection orifices in the same direction as the direction in which the raw material gas is injected, the gases are discharged from a gas outlet, and thereby, the pressure in a chamber is controlled to a pressure of more than 1 kPa. Then, a DC pulse voltage is applied to each counter electrode to deposit a silicon-based thin film. A DC pulse voltage is applied to perform discharge. Therefore, even in a state where the distance between the electrodes is increased, plasma can be generated efficiently, and the in-plane distribution of film thickness can be improved.

    摘要翻译： 一种硅基薄膜沉积设备，包括多个透明电极，设置成面对相应的对置电极，其间具有空间。 随后，在从原料气体喷射孔向支撑电极注入原料气体的同时，从与阻止气体注入孔注入的阻挡气体沿与注入原料气体的方向相同的方向注入时，将气体从 气体出口，从而将室中的压力控制在大于1kPa的压力。 然后，将DC脉冲电压施加到每个对电极以沉积硅基薄膜。 施加直流脉冲电压进行放电。 因此，即使在电极之间的距离增加的状态下，也能有效地产生等离子体，能够提高膜厚的面内分布。

    Process for producing a planar body of an oxide single crystal
    8.
    发明授权
    Process for producing a planar body of an oxide single crystal 有权
    用于制造氧化物单晶的平面体的方法

    公开(公告)号：US06527851B2

    公开(公告)日：2003-03-04

    申请号：US09798750

    申请日：2001-03-02

    申请人： Katsuhiro Imai ,  Akihiko Honda ,  Minoru Imaeda

    发明人： Katsuhiro Imai ,  Akihiko Honda ,  Minoru Imaeda

    IPC分类号： C30B1508

    CPC分类号： C30B15/08 ,  C30B15/00 ,  C30B29/30

    摘要： A planar body with a good crystallinity is grown continuously and stably when a planar body of an oxide single crystal is grown by a micro pulling-down method. A raw material of the oxide single crystal is melted in a crucible 7. A fibrous seed crystal 15 is contacted to a melt 18, and then the melt 18 is pulled down from an opening 13c of the crucible 7 by lowering the seed crystal. A shoulder portion 14A is produced following the seed crystal, and a planar body 14B is produced following the shoulder portion. In this case, differences in lattice constants between each crystal axis of the seed crystal and each corresponding crystal axis of the shoulder portion are controlled at 1% or less, respectively.

    摘要翻译： 当通过微型拉下法生长氧化物单晶的平面体时，连续稳定地生长具有良好结晶度的平面体。 氧化物单晶的原料在坩埚7中熔融。纤维晶种15与熔体18接触，然后通过降低晶种从坩埚7的开口13c向下拉。 在晶种之后产生肩部14A，并且在肩部之后制造平面体14B。 在这种情况下，将晶种的每个晶轴与肩部的每个相应的晶轴之间的晶格常数的差分别控制在1％以下。

    Method for producing a single-crystalline film of KLN or KLNT
    9.
    发明授权
    Method for producing a single-crystalline film of KLN or KLNT 失效
    KLN或KLNT单晶膜的制造方法

    公开(公告)号：US06447606B2

    公开(公告)日：2002-09-10

    申请号：US09320335

    申请日：1999-05-26

    申请人： Minoru Imaeda ,  Takashi Yoshino

    发明人： Minoru Imaeda ,  Takashi Yoshino

    IPC分类号： C30B2812

    CPC分类号： G02F1/377 ,  C30B23/02 ,  C30B29/30 ,  G02F1/3551 ,  G02F2201/307 ,  G02F2202/20 ,  Y10S117/904 ,  Y10S117/918

    摘要： A method for producing a single-crystalline film made of a single crystal of lithium potassium niobate-lithium potassium tantalate solid solution or a single crystal of lithium potassium niobate, including the steps of preparing a target made of a material for the single-crystalline film, preparing a foundation made of a single crystal of lithium potassium niobate-lithium potassium tantalate solid solution or a single crystal of lithium potassium niobate, irradiating the target to gasify molecules constituting the target by dissociation and evaporation thereof, and epitaxially growing the single-crystalline film on the foundation.

    摘要翻译： 一种由铌酸锂钾 - 钾酸钾固溶体的单晶制成的单晶膜或铌酸锂钾的单晶的方法，包括以下步骤：制备由单晶膜材料制成的靶 制备由铌酸锂钾锂铌酸钾固溶体的单晶或铌酸锂钾的单晶构成的基体，照射靶，通过解离和蒸发来气化构成靶的分子，并外延生长单晶 电影在基础上。